公开(公告)号：US5091460A

公开(公告)日：1992-02-25

申请号：US618551

申请日：1990-11-27

申请人： Kazuo Seto ,  Minoru Inoue ,  Motoaki Haruna ,  Hiroshi Kimura ,  Yasutoshi Nagano ,  Yasuhiro Kushida

发明人： Kazuo Seto ,  Minoru Inoue ,  Motoaki Haruna ,  Hiroshi Kimura ,  Yasutoshi Nagano ,  Yasuhiro Kushida

IPC分类号： C04B41/49 ,  C04B41/52 ,  C04B41/64 ,  C04B41/70 ,  C09D183/04 ,  C09D183/08

CPC分类号： C04B41/009 ,  C04B41/4961 ,  C04B41/52 ,  C04B41/64 ,  C04B41/70 ,  C09D183/04 ,  C09D183/08

摘要： A coating composition, a coated inorganic hardened product having a cured layer formed from the coating composition, and a process for producing the coated hardened product.a coating composition comprising the following components (A) to (C);an organosilane oligomer solution containing silica particles dispersed therein, said solution being obtained by partially hydrolyzing a hydrolyzable organosilane represented by the formulaR.sup.1.sub.n SiX.sub.4-n (I)wherein R.sup.1 which may be the same or different each represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 8 carbon atoms, n is an integer of from 0 to 3, and X represents a hydrolyzable group, in a colloidal silica dispersed in an organic solvent or water,(B) a polyorganosiloxane having a silanol group in the molecule thereof, represented by the average composition formulaR.sup.2.sub.a Si(OH).sub.b O.sub.(4-a-b)/2 (II)wherein R.sup.2 may be the same or different each represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 8 carbon atoms, and a and b are numbers satisfying the following equations:0.2.ltoreq.a.ltoreq.20.0001.ltoreq.b.ltoreq.3a+b.ltoreq.4, and(C) a catalyst.

公开(公告)号：US5081064A

公开(公告)日：1992-01-14

申请号：US532709

申请日：1990-06-04

申请人： Minoru Inoue ,  Ryuji Iwama

发明人： Minoru Inoue ,  Ryuji Iwama

IPC分类号： H01L21/768 ,  H01L23/522

CPC分类号： H01L21/76862 ,  H01L21/76844 ,  H01L21/76855 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2924/0002

摘要： A method of forming an electrical contact between interconnection layers located at different layer levels includes the steps of forming a contact hole in an interlayer insulating film, and forming a metallic intermediate layer on an exposed surface portion of a first conductive interconnection layer and the interlayer insulating film. Then, a portion of said metallic intermediate layer exposed through said contact hole and an oxide film formed on said surface portion of the first conductive interconnection layer are eliminated by an etching process. This process is carried out in a vacuum. After that, in the vacuum, a second conductive interconnection layer is formed in said contact hole and formed on said interlayer insulating film so that an electrical contact between said first and second conductive interconnection layers are formed.

公开(公告)号：US4976839A

公开(公告)日：1990-12-11

申请号：US383511

申请日：1989-07-24

申请人： Minoru Inoue

发明人： Minoru Inoue

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76843 ,  H01L21/76886 ,  H01L23/53223 ,  H01L2924/0002

摘要： A titanium nitride barrier layer of 50 to 200 nm in thickness is fabricated between a silicon substrate and an aluminum electrode layer of an IC device by reactive sputtering performed in a mixed gas including oxygen in a proportion of 1 to 5% by volume relative to other gases, comprising an inert gas and a reactive gas, providing the temperature of the silicon substrate at 350.degree. to 550.degree. C. during the reactive sputtering, so that the product has a failure rate, indicating the property of preventing mutual diffusion of silicon and aluminum atoms from occurring, of less than 1% and a resistivity less than 100 .mu..OMEGA..cm.

公开(公告)号：US4902582A

公开(公告)日：1990-02-20

申请号：US300186

申请日：1989-01-23

申请人： Minoru Inoue

发明人： Minoru Inoue

IPC分类号： H01L21/388 ,  H01L21/28 ,  H01L21/285 ,  H01L29/45

CPC分类号： H01L29/456 ,  H01L21/28512 ,  Y10T428/12674 ,  Y10T428/12736

摘要： A semiconductor device comprising a metallized layer formed on a silicon substrate, wherein said metallized layer is an aluminum alloy consisting essentially of aluminum, silicon and at least one element selected from the group consisting of titanium, vanadium, chromium, tungsten, and phosphorus the amount of silicon being 1.0% to 3.0% by weight, the amount of said selected element corresponding to the relative service life required of the metallized layer, said required service life being 10 times that of a metallized layer having the same composition as that of the above-mentioned metallized layer except for being free from said element, and the rest being aluminum. For example, the metallized layer may contain at least 0.04% and less than 0.10% by weight of titanium, 1.0% by weight of silicon, and the rest aluminum.

摘要翻译： 一种半导体器件，包括形成在硅衬底上的金属化层，其中所述金属化层是基本上由铝，硅和至少一种选自钛，钒，铬，钨和磷的元素组成的铝合金，其量 的硅为1.0〜3.0重量％，所述选定元素的量相当于金属化层所需的相对使用寿命，所述使用寿命为与上述相同组成的金属化层的10倍 所述金属化层除了不含所述元素，其余为铝。 例如，金属化层可以含有至少0.04重量％且小于0.10重量％的钛，1.0重量％的硅和其余的铝。

公开(公告)号：US08775873B2

公开(公告)日：2014-07-08

申请号：US13343765

申请日：2012-01-05

申请人： Masao Tomofuji ,  Shigeo Yoshikawa ,  Minoru Inoue

发明人： Masao Tomofuji ,  Shigeo Yoshikawa ,  Minoru Inoue

IPC分类号： G06F11/00

CPC分类号： G06F11/3684

摘要： In a data processing apparatus, when an instruction for starting validation is provided, or when definition information is updated, data input from a data source is collected, and a process for narrowing down of the collected data is executed. In the data narrowing process, by extracting records and items as process targets according to the definition information that defines the operation of the apparatus, the number of data items used for validation is reduced. Then, the operation is validated using the narrowed data. In the operation validation process, a virtual transfer destination of output of data is provided within the apparatus, and the data is output to the virtual transfer destination, for comparison with the output data, whereby the validation of the operation is performed.

摘要翻译： 在数据处理装置中，当提供用于开始验证的指令时，或者当更新定义信息时，收集从数据源输入的数据，并且执行收集的数据的缩小处理。 在数据收缩处理中，通过根据定义设备的操作的定义信息，提取记录和项目作为过程目标，减少了用于验证的数据项的数量。 然后，使用变窄的数据验证操作。 在操作验证过程中，在设备内提供数据输出的虚拟传送目的地，并且将数据输出到虚拟传送目的地，以与输出数据进行比较，由此执行操作的验证。

公开(公告)号：US20080128833A1

公开(公告)日：2008-06-05

申请号：US11660925

申请日：2005-08-25

申请人： Takaaki Kawahara ,  Kazuyoshi Torii ,  Minoru Inoue ,  Satoshi Hasaka

发明人： Takaaki Kawahara ,  Kazuyoshi Torii ,  Minoru Inoue ,  Satoshi Hasaka

IPC分类号： H01L29/78 ,  C09D1/00 ,  H01L21/316

CPC分类号： H01L21/02181 ,  C23C16/308 ,  C23C16/40 ,  H01L21/02148 ,  H01L21/02178 ,  H01L21/02194 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31645 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

摘要： A high-dielectric-constant film including hafnium, wherein the above-mentioned high-dielectric-constant film includes deuterium at a ratio higher than the ratio of deuterium to hydrogen present in nature. In a field-effect transistor provided with the high-dielectric-constant film including hafnium, the interface state density at the interface between a silicon substrate and a gate dielectric film decreases and carrier mobility in the gate dielectric film increases. In the present invention, a high-dielectric-constant constant second dielectric film, which is a thin film including hafnium such as HfSiON or HfAlOx and including deuterium at a ratio higher than the ratio of deuterium to hydrogen present in nature, is used as the gate dielectric film of the field-effect transistor.

摘要翻译： 包括铪的高介电常数膜，其中上述高介电常数膜包括比自然界中存在的氘与氢的比例高的氘。 在设置有包含铪的高介电常数膜的场效应晶体管中，硅衬底和栅极电介质膜之间的界面处的界面态密度降低，并且栅极电介质膜中的载流子迁移率增加。 在本发明中，高介电常数常数第二电介质膜是包括铪如HfSiON或HfAlO x x的薄膜，并且包含氘的比例高于氘与氢的比例 本质上是用作场效应晶体管的栅极电介质膜。

公开(公告)号：USD477008S1

公开(公告)日：2003-07-08

申请号：US29171456

申请日：2002-11-21

申请人： Takeshi Asaka ,  Minoru Inoue ,  Shinichiro Shiba

设计人： Takeshi Asaka ,  Minoru Inoue ,  Shinichiro Shiba

公开(公告)号：US06292532B1

公开(公告)日：2001-09-18

申请号：US09460972

申请日：1999-12-15

申请人： Naoki Kawahara ,  Takashi Shoji ,  Takashi Misonoo ,  Kouichi Aoyagi ,  Akira Arake ,  Takashi Sakamoto ,  Minoru Inoue ,  Yasujiro Yamada

发明人： Naoki Kawahara ,  Takashi Shoji ,  Takashi Misonoo ,  Kouichi Aoyagi ,  Akira Arake ,  Takashi Sakamoto ,  Minoru Inoue ,  Yasujiro Yamada

IPC分类号： G01N23223

CPC分类号： G01N23/223 ,  G01N2223/076

摘要： A fluorescent X-ray analyzing apparatus capable of being used as either a wavelength dispersive type or an energy dispersive type is provided, with which the analysis can be performed quickly and accurately. The fluorescent X-ray analyzing apparatus includes a detecting unit for detecting and analyzing fluorescent X-ray (5) emitted from at least one target area (1a) of a sample (1) to be analyzed as a result of excitation of such target area (1a) with a primary X-ray (3). The detecting unit includes a wavelength dispersive type detecting unit (6) including a spectroscope (8) and a first detector (9), and an energy dispersive type detecting unit (11) including a second detector (12) of an energy dispersive type. The angle &thgr;1 formed between a first path (81) of travel of the fluorescent X-ray from the target area (1a) towards the spectroscope (8) and a surface of the sample (1) is equal to the angle &thgr;2 formed between a second path (82) of travel of the fluorescent X-ray from the target area (1a) towards the second detector (12) of the energy dispersive type and a surface of the sample (1), but the second path (82) is shorter than the first path (81).

摘要翻译： 提供能够用作波长色散型或能量色散型的荧光X射线分析装置，可以快速准确地进行分析。 荧光X射线分析装置包括：检测并分析从待分析的样品（1）的至少一个目标区域（1a）发射的荧光X射线（5）的检测单元，作为该目标区域的激发 （1a）与主X射线（3）。 检测单元包括具有分光器（8）和第一检测器（9）的波长色散型检测单元（6），以及包括能量分散型的第二检测器（12）的能量分散型检测单元（11）。 在从目标区域（1a）到分光器（8）的荧光X射线的行进的第一路径（81）和样品（1）的表面之间形成的角度θ1等于形成在 来自目标区域（1a）的荧光X射线的第二路径（82）朝向能量分散型的第二检测器（12）和样品（1）的表面，但是第二路径（82）是 比第一路径（81）短。

公开(公告)号：US5871861A

公开(公告)日：1999-02-16

申请号：US727203

申请日：1996-10-08

申请人： Nobuyoshi Hirokou ,  Yuukichi Kobayashi ,  Isao Kaneko ,  Minoru Inoue ,  Tomikazu Koyama

发明人： Nobuyoshi Hirokou ,  Yuukichi Kobayashi ,  Isao Kaneko ,  Minoru Inoue ,  Tomikazu Koyama

IPC分类号： H01M2/20 ,  H01M2/26 ,  H01M2/30 ,  H01M4/04 ,  H01M10/04 ,  H01M10/052 ,  H01M10/058 ,  H01M10/38 ,  H01M10/60 ,  H01M10/613 ,  H01M10/625 ,  H01M10/627 ,  H01M10/647 ,  H01M10/651 ,  H01M10/6551 ,  H01M10/6553 ,  H01M10/6562 ,  H01M10/6563 ,  H01M10/6567

CPC分类号： H01M10/0525 ,  H01M10/613 ,  H01M10/654 ,  H01M10/6553 ,  H01M10/6563 ,  H01M10/6567 ,  H01M2/20 ,  H01M2/26 ,  H01M10/0413 ,  Y02P70/54

摘要： A lithium ion secondary cell comprises a plurality of single cells composed of a collector comprising positive electrodes composed of a metallic material coated with a positive electrode active substance; negative electrodes composed of a metallic material coated with a negative electrode active substance; separators interposed between the positive and negative electrodes; lugs of the metallic materials where the active substance is not coated; and conductors adapted to bunch and clamp the lugs of the positive and negative electrodes separately, the positive and negative electrodes being assembled in laminate alternatively, and the ends of the lugs of the positive and negative electrodes being welded to the respective conductors separately so that electric current can be taken out through the conductors.

摘要翻译： 锂离子二次电池包括由包含由涂覆有正极活性物质的金属材料构成的正极的集电体构成的多个单电池; 由涂覆有负极活性物质的金属材料构成的负极; 夹在正极和负极之间的隔板; 未涂覆活性物质的金属材料的凸耳; 以及分别对正极和负极的凸块进行束缚和夹紧的导体，正极和负极交替地组装成层压体，并且正极和负极的凸耳的端部分别焊接到相应的导体，使得电 电流可以通过导线取出。

公开(公告)号：US5514316A

公开(公告)日：1996-05-07

申请号：US68701

申请日：1993-05-28

申请人： Tatsuhiro Kosugi ,  Mitsuru Saka ,  Akio Matsumoto ,  Minoru Inoue ,  Toshiaki Nogami ,  Takazi Naotsuka ,  Masao Yamasaki ,  Hiroyuki Suzuki

发明人： Tatsuhiro Kosugi ,  Mitsuru Saka ,  Akio Matsumoto ,  Minoru Inoue ,  Toshiaki Nogami ,  Takazi Naotsuka ,  Masao Yamasaki ,  Hiroyuki Suzuki

IPC分类号： C04B33/28 ,  B28B1/26

CPC分类号： B28B1/26 ,  B28B1/265

摘要： A ceramic article such as a sanitary pottery ware is produced by slip casting using a porous composite mold. A green ceramic body of a part such as a trap of sanitary ware is separately formed in advance by, for example, slip casting. The green ceramic body is placed in the mold cavity of the porous composite mold. Then, a slip as the material of the main part of the sanitary ware is supplied into the mold cavity to form deposit integral with the green ceramic body, whereby an integral sanitary ware is obtained by slip casting.

摘要翻译： 通过使用多孔复合模具的滑移浇铸来制造诸如卫生陶瓷制品的陶瓷制品。 通过例如滑动铸造，预先分开形成诸如卫生洁具的部件的生坯陶瓷体。 将生坯陶瓷体放置在多孔复合模具的模腔中。 然后，将作为卫生洁具的主要部分的材料的滑动件供应到模具腔中以形成与生坯体一体的沉积物，由此通过滑移浇铸获得整体的卫生洁具。