公开(公告)号：US07104267B2

公开(公告)日：2006-09-12

申请号：US09727133

申请日：2000-11-29

申请人： Ramin Emami ,  Shijian Li ,  Sen-Hou Ko ,  Fred C. Redeker ,  Madhavi Chandrachood

发明人： Ramin Emami ,  Shijian Li ,  Sen-Hou Ko ,  Fred C. Redeker ,  Madhavi Chandrachood

IPC分类号： H01L21/302

CPC分类号： H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： A process for treating a copper or copper alloy substrate surface with a composition and corrosion inhibitor solution to minimize defect formation and surface corrosion, the method including applying a composition including one or more chelating agents, a pH adjusting agent to produce a pH between about 3 and about 11, and deionized water, and then applying a corrosion inhibitor solution. The composition may further comprise a reducing agent and/or corrosion inhibitor. The method may further comprise applying the corrosion inhibitor solution prior to treating the substrate surface with the composition.

摘要翻译： 一种用组合物和腐蚀抑制剂溶液处理铜或铜合金基材表面以最小化缺陷形成和表面腐蚀的方法，该方法包括施加包含一种或多种螯合剂的组合物，pH调节剂以产生约3 约11，去离子水，然后涂上缓蚀剂溶液。 组合物还可以包含还原剂和/或缓蚀剂。 该方法还可以包括在用组合物处理基材表面之前施加腐蚀抑制剂溶液。

公开(公告)号：US20060166487A1

公开(公告)日：2006-07-27

申请号：US11393999

申请日：2006-03-30

申请人： Stan Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel Carl

发明人： Stan Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel Carl

IPC分类号： H01L21/4763 ,  H01L21/461

CPC分类号： H01L21/7684 ,  B24B37/042 ,  B24B49/16 ,  H01L21/3212 ,  Y02P80/30

摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

公开(公告)号：US07060606B2

公开(公告)日：2006-06-13

申请号：US10972191

申请日：2004-10-22

申请人： Stan D. Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Q. Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel A. Carl

发明人： Stan D. Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Q. Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel A. Carl

IPC分类号： H01L21/4763

CPC分类号： H01L21/7684 ,  B24B37/042 ,  B24B49/16 ,  H01L21/3212 ,  Y02P80/30

摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

公开(公告)号：US07041599B1

公开(公告)日：2006-05-09

申请号：US09469709

申请日：1999-12-21

申请人： Shijian Li ,  Fred C. Redeker ,  John White ,  Ramin Emami

发明人： Shijian Li ,  Fred C. Redeker ,  John White ,  Ramin Emami

IPC分类号： H01L21/302

CPC分类号： B24B37/04 ,  B24B57/02 ,  H01L21/3212

摘要： High through-put Cu CMP is achieved with reduced erosion and dishing by a multi-step polishing technique. Deposited Cu is polished with fixed abrasive polishing pads initially at a high removal rate and subsequently at a reduced removal rate and high Cu:barrier layer (Ta) selectivity. Embodiments of the present invention include reducing dishing by: controlling platen rotating speeds; increasing the concentration of active chemicals; and cleaning the polishing pads between wafers. Embodiments also include removing particulate material during CMP by increasing the flow rate of the chemical agent or controlling the static etching rate between about 100 Å and about 150 Å per minute, and recycling the chemical agent. Embodiments further include flowing an inhibitor across the wafer surface after each CMP step to reduce the static etching rate.

摘要翻译： 通过多步抛光技术，可以减少腐蚀和凹陷，实现高通量Cu CMP。 沉积的Cu以固定的研磨抛光垫抛光，最初以高的去除速率和随后的降低的去除速率和高的Cu：阻挡层（Ta）选择性。 本发明的实施例包括：通过以下步骤减少凹陷：控制压板转速; 增加活性化学品的浓度; 并在晶片之间清洁抛光垫。 实施方案还包括通过增加化学试剂的流速或控制每分钟约100埃至约150埃的静态蚀刻速率和循环该化学试剂来在CMP期间除去颗粒物质。 实施例还包括在每个CMP步骤之后使抑制剂流过晶片表面以降低静态蚀刻速率。

公开(公告)号：US06960521B2

公开(公告)日：2005-11-01

申请号：US10939750

申请日：2004-09-13

申请人： Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony S. Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred C. Redeker

发明人： Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony S. Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred C. Redeker

IPC分类号： B24B1/00 ,  B24B5/00 ,  B24B29/00 ,  B24B37/04 ,  C23F1/00 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/3212 ,  B24B37/042 ,  B24B37/30 ,  H01L21/7684

摘要： Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

摘要翻译： 提供了用于抛光衬底的方法和装置，其包括具有降低或最小衬底表面损伤和分层的导电和低k电介质材料。 在一个方面，提供了一种用于处理衬底的方法，包括将具有形成在其上的导电材料的衬底定位在具有一个或多个旋转载体头和一个或多个可旋转压板的抛光设备中，其中所述载体头包括保持环和 用于固定基板的薄膜和压板具有设置在其上的抛光制品，其以约0.4psi或更大于膜压力的保持环接触压力将基板表面和抛光制品彼此接触，并抛光基板以去除导电 材料。

公开(公告)号：US06872329B2

公开(公告)日：2005-03-29

申请号：US09842476

申请日：2001-04-25

申请人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker ,  Shijian Li

发明人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker ,  Shijian Li

IPC分类号： B24B37/04 ,  C09G1/02 ,  H01L21/321 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  H01L21/302

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02

摘要： A method and composition for planarizing a substrate surface is provided. The polishing composition includes an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal and a stabilizer such as a stannate salt. The composition may further include abrasive particles and/or inhibitors. The composition may be used in a multi-step polishing process including polishing a substrate surface to selectively remove a metal layer with respect to a barrier layer and dielectric layer and polishing a substrate surface using the composition to non-selectively remove the metal layer, a barrier layer, and a dielectric layer from the substrate surface.

摘要翻译： 提供了用于平坦化基板表面的方法和组合物。 抛光组合物包括能够氧化经历平坦化的金属并产生与氧化金属络合的络合剂和稳定剂如锡酸盐的氧化剂。 组合物还可以包括研磨颗粒和/或抑制剂。 组合物可以用于多步抛光工艺中，包括抛光衬底表面以相对于阻挡层和电介质层选择性去除金属层，并使用该组合物抛光衬底表面以非选择性地去除金属层， 阻挡层和介电层。

公开(公告)号：US06669538B2

公开(公告)日：2003-12-30

申请号：US09512745

申请日：2000-02-24

申请人： Shijian Li ,  Ramin Emami ,  Sen-Hou Ko ,  Shi-Ping Wang ,  Fred C. Redeker ,  Lizhong Sun ,  Stan Tsai

发明人： Shijian Li ,  Ramin Emami ,  Sen-Hou Ko ,  Shi-Ping Wang ,  Fred C. Redeker ,  Lizhong Sun ,  Stan Tsai

IPC分类号： B24B100

CPC分类号： B24B53/017

摘要： The present invention generally provides a system and apparatus for cleaning a polishing pad, such as a fixed abrasive pad, in a substrate processing system. In one embodiment, the system includes one or more nozzles which spray a fluid at pressures of about 30 psi to about 300 psi or greater, as measured at the nozzle, onto a polishing pad at acute angles to the surface of the polishing pad. The nozzles can spray downward and outward toward the perimeter of the pad to facilitate the debris removal therefrom. The system can include a pressure source to produce a sufficient fluid pressure substantially higher than the typical fluid pressure available from a facility installation.

摘要翻译： 本发明通常提供一种用于在衬底处理系统中清洁抛光垫，例如固定研磨垫的系统和装置。 在一个实施例中，该系统包括一个或多个喷嘴，其以在喷嘴处测量的约30psi至约300psi或更大的压力喷射流体至抛光垫的表面的锐角处的抛光垫上。 喷嘴可以朝向垫的周边向下和向外喷射以便于从其中移除碎片。 该系统可以包括压力源以产生足够的流体压力，该流体压力显着高于可从设施设施获得的典型流体压力。

公开(公告)号：US06653242B1

公开(公告)日：2003-11-25

申请号：US09608078

申请日：2000-06-30

申请人： Lizhong Sun ,  Stan D Tsai ,  Shijian Li ,  John M White

发明人： Lizhong Sun ,  Stan D Tsai ,  Shijian Li ,  John M White

IPC分类号： H01L21302

CPC分类号： H01L21/3212 ,  C09G1/04

摘要： A method and composition for planarizing a substrate. The composition includes one or more surfactants, including one or more anionic surfactants, Zweitter-ionic surfactants, dispersers, or combinations thereof, one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more surfactants of anionic surfactants, Zweitter-ionic surfactants, or combinations thereof.

摘要翻译： 一种用于平坦化衬底的方法和组合物。 组合物包括一种或多种表面活性剂，包括一种或多种阴离子表面活性剂，Zweitter离子表面活性剂，分散剂或其组合，一种或多种螯合剂，一种或多种氧化剂，一种或多种腐蚀抑制剂和去离子水。 组合物还可以包含一种或多种调节pH和/或磨料颗粒的试剂。 该方法包括使用包含一种或多种阴离子表面活性剂，Zweitter离子型表面活性剂或其组合的表面活性剂的组合物平面化底物。

公开(公告)号：US06592742B2

公开(公告)日：2003-07-15

申请号：US09905315

申请日：2001-07-13

申请人： Lizhong Sun ,  Shijian Li

发明人： Lizhong Sun ,  Shijian Li

IPC分类号： B23H300

CPC分类号： B24B37/24 ,  B23H3/00 ,  B23H5/08 ,  C25F3/16 ,  C25F7/00

摘要： A method of chemically polishing a metal layer on a substrate is provided. The metal layer is chemically polished using an electrochemical polishing (ECP) process. In the ECP process, the substrate is immersed in a chemical polishing solution including a surfactant. The surfactant in the polishing solution covers the surface of the substrate such that only topographic portions of the substrate surface are exposed to the chemical polishing solution. Thereafter, an electrical potential applied to the substrate removes topographic portions of the substrate that are exposed to the polishing solution.

公开(公告)号：US06432826B1

公开(公告)日：2002-08-13

申请号：US09450479

申请日：1999-11-29

申请人： Ramin Emami ,  Shijian Li ,  Sen-Hou Ko ,  Fred C. Redeker ,  Madhavi Chandrachood

发明人： Ramin Emami ,  Shijian Li ,  Sen-Hou Ko ,  Fred C. Redeker ,  Madhavi Chandrachood

IPC分类号： H01L21302

CPC分类号： H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： Cu metallization is treated to reduce defects and effect passivation by removing a thin surface layer or removing corrosion stains, subsequent to CMP and barrier layer removal, employing a cleaning composition comprising deionized water, an acid and ammonium hydroxide and/or an amine. Embodiments include removing up to about 100 Å of the Cu metallization surface in a damascene opening by sequentially treating the exposed Cu surface with: an optional corrosion inhibitor; a solution having a pH of about 4 to about 11 and containing an acid, ammonium hydroxide and/or an amine, and deionized water; and a corrosion inhibitor.

摘要翻译： 通过使用包含去离子水，酸和氢氧化铵和/或胺的清洁组合物，在CMP和阻隔层去除之后，通过去除薄的表面层或去除腐蚀污渍来处理Cu金属化以减少缺陷并实现钝化。 实施例包括通过用任意的腐蚀抑制剂依次处理暴露的Cu表面，在镶嵌开口中去除多达约100埃的Cu金属化表面; pH为约4至约11并含有酸，氢氧化铵和/或胺的溶液和去离子水; 和腐蚀抑制剂。