公开(公告)号：US20120031559A1

公开(公告)日：2012-02-09

申请号：US12850559

申请日：2010-08-04

申请人： Rajinder Dhindsa ,  Alexei Marakhatnov ,  Andrew D. Bailey, III

发明人： Rajinder Dhindsa ,  Alexei Marakhatnov ,  Andrew D. Bailey, III

IPC分类号： H01L21/306 ,  C23F1/08

CPC分类号： H01J37/32449 ,  H01J37/32091 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32834 ,  H01L21/67069 ,  H01L21/67259 ,  H01L21/6831 ,  H01L22/26

摘要： A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radiofrequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.

摘要翻译： 半导体晶片处理装置包括暴露于第一等离子体产生体积的第一电极，暴露于第二等离子体产生体积的第二电极和设置在第一和第二等离子体产生体积之间的气体分配单元。 第一电极被定义为将射频（RF）功率传送到第一等离子体产生体积，并且将第一等离子体处理气体分配到第一等离子体产生体积。 第二电极被定义为将RF功率传送到第二等离子体产生体积，并且保持衬底暴露于第二等离子体产生体积。 气体分配单元包括限定为将第一等离子体产生体积流体连接到第二等离子体产生体积的通孔的布置。 气体分配单元还包括被定义为将第二等离子体处理气体分配到第二等离子体产生体积的气体供给端口的布置。

公开(公告)号：US20110253312A9

公开(公告)日：2011-10-20

申请号：US12021177

申请日：2008-01-28

申请人： Tong Fang ,  Yunsang Kim ,  Andrew D. Bailey, III ,  Olivier Rigoutat ,  George Stojakovic

发明人： Tong Fang ,  Yunsang Kim ,  Andrew D. Bailey, III ,  Olivier Rigoutat ,  George Stojakovic

IPC分类号： B44C1/22 ,  H01L21/3065

CPC分类号： H01J37/32449 ,  H01J37/32091 ,  H01J2237/3341 ,  H01L21/02087

摘要： The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.

摘要翻译： 各种实施例提供了在基板的斜边缘附近去除不需要的沉积物以提高工艺产量的装置和方法。 这些实施例提供了具有中心和边缘气体进料作为附加过程旋钮的设备和方法，用于选择最合适的斜面边缘蚀刻工艺，以将边缘排除区域进一步朝向衬底边缘向外推动。 此外，实施例提供了具有调节气体以改变斜面边缘处的蚀刻轮廓的装置和方法，并且使用中心和边缘气体进料的组合来流动过程并将气体调谐到腔室中。 调节气体的使用和气体进料的位置都影响斜边处的蚀刻特性。 总气体流量，气体输送板和基底表面之间的间隙距离，压力和工艺气体的类型也被发现影响斜面边缘蚀刻轮廓。

公开(公告)号：US20110232566A1

公开(公告)日：2011-09-29

申请号：US13157122

申请日：2011-06-09

申请人： Jack Chen ,  Andrew D. Bailey, III ,  Iqbal Shareef

发明人： Jack Chen ,  Andrew D. Bailey, III ,  Iqbal Shareef

IPC分类号： B05C11/10

CPC分类号： H01L21/02087 ,  C23C16/455 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708

摘要： A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.

摘要翻译： 提供了一种用于在处理室中蚀刻衬底的斜边缘的方法。 该方法包括将惰性气体流入位于衬底的中心区域上方的处理室的中心区域，并将惰性气体和处理气体的混合物流过衬底的边缘区域。 该方法还包括在边缘区域中打击等离子体，其中惰性气体的流动和混合物的流动维持处理气体的质量分数基本恒定。 还提供了一种构造成清洁基板的斜边缘的处理室。

公开(公告)号：US20110214687A1

公开(公告)日：2011-09-08

申请号：US13081264

申请日：2011-04-06

申请人： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Gregory Sexton ,  Yunsang Kim ,  William S. Kennedy

发明人： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Gregory Sexton ,  Yunsang Kim ,  William S. Kennedy

IPC分类号： C23F1/08 ,  B08B13/00 ,  B08B7/00

CPC分类号： H01L21/0209 ,  H01J37/32366 ,  H01J37/32568 ,  H01J2237/335 ,  H01L21/67069

摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.

摘要翻译： 一种用于清洁半导体衬底的斜边缘的装置。 该装置包括：具有圆柱形顶部的下支撑件; 围绕顶部部分的外边缘并适于支撑基底的较低等离子体排除区（PEZ）环; 与所述下支撑件相对并且具有圆柱形底部部分的上介电部件; 围绕底部的外边缘并与下部PEZ环相对的上部PEZ环; 以及至少一个射频（RF）电源，其用于在由所述上和下PEZ环限定的环形空间中将工艺气体激发成等离子体，其中所述环形空间包围所述斜面边缘。

公开(公告)号：US20110180212A1

公开(公告)日：2011-07-28

申请号：US13082393

申请日：2011-04-07

申请人： Andrew D. Bailey, III ,  Yunsang Kim

发明人： Andrew D. Bailey, III ,  Yunsang Kim

IPC分类号： H01L21/3065

CPC分类号： H01J37/32385 ,  H01J37/321 ,  H01J37/32366 ,  H01J37/32706 ,  H01L21/02087 ,  H01L21/67069 ,  H01L21/6715

摘要： Chambers for processing a bevel edge of a substrate are provided. One such chamber includes a bottom electrode defined to support a substrate in the chamber. The bottom electrode has a bottom first level for supporting the substrate and a bottom second level near an outer edge of bottom electrode. The bottom second level is defined at a step below the bottom first level. Further included is a top electrode oriented above the bottom electrode. The top electrode having a top first level and a top second level, where the top first level is opposite the bottom first level and the top second level is opposite the bottom second level. The top second level is defined at a step above the top first level. A bottom ring mount oriented at the bottom second level is included. The bottom ring mount includes a first adjuster for moving a bottom permanent magnet toward and away from the top electrode. Further included is a top ring mount oriented at the top second level. The top ring mount includes a second adjuster for moving a top permanent magnet toward and away from the bottom electrode.

摘要翻译： 提供了用于处理基板的斜边缘的室。 一个这样的室包括限定为支撑室中的衬底的底部电极。 底部电极具有用于支撑衬底的底部第一电平和底部电极的外部边缘附近的底部第二电平。 底部第二级别定义在底层第一级以下的一级。 还包括位于底部电极上方的顶部电极。 顶部电极具有顶部第一电平和顶部第二电平，其中顶部第一电平与底部第一电平相反，而顶部第二电平与底部第二电平相反。 顶级的第二级是在顶级第一级以上的一级定义的。 包括位于底部第二级的底环安装座。 底环安装件包括用于使底部永磁体朝向和远离顶部电极移动的第一调节器。 另外还包括一个位于顶部第二层的顶环安装座。 顶环安装件包括用于使顶部永磁体朝向和远离底部电极移动的第二调节器。

公开(公告)号：US20110108524A1

公开(公告)日：2011-05-12

申请号：US12872982

申请日：2010-08-31

申请人： Rajinder Dhindsa ,  Michael C. Kellogg ,  Babak Kadkhodayan ,  Andrew D. Bailey, III

发明人： Rajinder Dhindsa ,  Michael C. Kellogg ,  Babak Kadkhodayan ,  Andrew D. Bailey, III

IPC分类号： C23F1/00 ,  H01L21/3065 ,  C23F1/08

CPC分类号： H01J37/32642 ,  H01J37/32623

摘要： An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.

摘要翻译： 提供了一种用于在处理室衬底处理中执行压力控制的装置。 该装置包括至少围绕限制室容积配置的外围环，该限定室容积被配置为在衬底处理期间维持用于刻蚀衬底的等离子体。 周边环包括多个狭槽，其被构造成至少在衬底处理期间从受限腔体积中排出经处理的副产物气体。 该布置还包括导电控制环，该导电控制环位于外围环旁边并且被配置为包括多个狭槽。 通过相对于外围环移动导电控制环来实现压力控制，使得外围环上的第一槽和导电控制环上的第二槽相对于彼此在零偏移到全偏移的范围内彼此偏移 。

公开(公告)号：US20100096087A1

公开(公告)日：2010-04-22

申请号：US12647301

申请日：2009-12-24

申请人： Gregory S. Sexton ,  Andrew D. Bailey, III ,  Alan M. Schoepp ,  John D. Boniface

发明人： Gregory S. Sexton ,  Andrew D. Bailey, III ,  Alan M. Schoepp ,  John D. Boniface

IPC分类号： H01L21/306

CPC分类号： H01L21/67069 ,  H01J37/32568

摘要： Positional relationships are established in a process chamber. A base is configured with a lower electrode surface to support a wafer, and an upper electrode has a lower surface. A drive mounted on the base has a linkage connected to the upper electrode. A fixture placed on the lower surface moves into a desired orientation of the lower electrode. With the upper electrode loosely connected by the linkage to the drive, the fixture transfers the desired orientation to the upper electrode. The linkage is tightened to maintain the desired orientation, the fixture is removed and a process exclusion insert is mounted to the upper electrode. The drive moves the upper electrode and the insert to define an inactive process zone between the upper electrode and the wafer on the lower electrode to protect a central area of the wafer during etching of a wafer edge environ around the central area.

摘要翻译： 位置关系建立在一个过程室中。 基底配置有下电极表面以支撑晶片，并且上电极具有下表面。 安装在基座上的驱动器具有连接到上电极的连杆。 放置在下表面上的固定器移动到下电极的期望取向。 通过与驱动器的联动松动地连接上电极，固定装置将期望的方向传送到上电极。 连接件被拧紧以保持所需的取向，夹具被移除，并且将过程排除插入件安装到上电极。 驱动器移动上电极和插入件以在下电极上的上电极和晶片之间限定非活动的工艺区域，以在蚀刻围绕中心区域的晶片边缘环境时保护晶片的中心区域。

公开(公告)号：US07653515B2

公开(公告)日：2010-01-26

申请号：US11698400

申请日：2007-01-25

申请人： Puneet Yadav ,  Andrew D. Bailey, III

发明人： Puneet Yadav ,  Andrew D. Bailey, III

IPC分类号： G06F19/00

CPC分类号： G05B19/41875 ,  G05B2219/31352 ,  G05B2219/32191 ,  Y02P90/22

摘要： A method for adjusting a data set defining a set of process runs, each process run having a set of data corresponding to a set of variables for a wafer processing operation is provided. A model derived from a data set is received. A new data set corresponding to one process run is received. The new data set is projected to the model. An outlier data point produced as a result of the projecting is identified. A variable corresponding to the one outlier data point is identified, the identified variable exhibiting a high contribution. A value for the variable from the new data set is identified. Whether the value for the variable is unimportant is determined. A normalized matrix of data is created, using random data and the variable that was determined to be unimportant from each of the new data set and the data set. The data set is updated with the normalized matrix of data.

摘要翻译： 提供一种用于调整定义一组处理运行的数据集的方法，每个处理运行具有与用于晶片处理操作的一组变量相对应的一组数据。 接收从数据集导出的模型。 接收对应于一个进程运行的新数据集。 新数据集投影到模型中。 识别作为投影结果产生的异常值数据点。 识别与一个异常数据点对应的变量，所识别的变量表现出高贡献。 识别来自新数据集的变量的值。 确定变量的值是否不重要。 使用随机数据和被确定为与每个新数据集和数据集不重要的变量来创建数据的归一化矩阵。 数据集用数据的归一化矩阵更新。

公开(公告)号：US20090170334A1

公开(公告)日：2009-07-02

申请号：US12341384

申请日：2008-12-22

申请人： Tong Fang ,  Andrew D. Bailey, III ,  Yunsang Kim ,  Olivier Rigoutat ,  George Stojakovic

发明人： Tong Fang ,  Andrew D. Bailey, III ,  Yunsang Kim ,  Olivier Rigoutat ,  George Stojakovic

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/32366 ,  H01L21/02068 ,  H01L21/02087 ,  H01L21/32136 ,  H01L21/6708

摘要： A method of bevel edge etching a semiconductor substrate having exposed copper surfaces with a fluorine-containing plasma in a bevel etcher in which the semiconductor substrate is supported on a semiconductor substrate support comprises bevel edge etching the semiconductor substrate with the fluorine-containing plasma in the bevel etcher; evacuating the bevel etcher after the bevel edge etching is completed; flowing defluorinating gas into the bevel etcher; energizing the defluorinating gas into a defluorination plasma at a periphery of the semiconductor substrate; and processing the semiconductor substrate with the defluorination plasma under conditions to prevent discoloration of the exposed copper surfaces of the semiconductor substrate upon exposure, the discoloration occurring upon prolonged exposure to air.

摘要翻译： 在半导体衬底支撑在半导体衬底支撑体上的斜面蚀刻器中，使用具有含氟等离子体的具有暴露的铜表面的半导体衬底进行斜边蚀刻的方法包括：在半导体衬底支撑体中的含氟等离子体 斜角蚀刻机 在斜边蚀刻完成之后排空斜面蚀刻机; 将脱氟气体流入斜面蚀刻机; 在所述半导体衬底的外围将所述脱氟气体通电为脱氟等离子体; 并且在曝光时防止半导体衬底的暴露的铜表面的变色的条件下，用脱氟等离子体处理半导体衬底，在长时间暴露于空气时发生变色。

公开(公告)号：US07540935B2

公开(公告)日：2009-06-02

申请号：US11076725

申请日：2005-03-09

申请人： Yunsang Kim ,  Andrew D. Bailey, III ,  Hyungsuk Alexander Yoon ,  Arthur M. Howald

发明人： Yunsang Kim ,  Andrew D. Bailey, III ,  Hyungsuk Alexander Yoon ,  Arthur M. Howald

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/32136 ,  H01L21/31683 ,  H01L21/321 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32138 ,  H01L21/32139 ,  H01L21/7684 ,  H01L21/76865 ,  H01L21/76885

摘要： A method of etching a conductive layer includes converting at least a portion of the conductive layer and etching the conductive layer to substantially remove the converted portion of the conductive layer and thereby expose a remaining surface. The remaining surface has an average surface roughness of less than about 10 nm. A system for etching a conductive layer is also disclosed.

摘要翻译： 蚀刻导电层的方法包括转换导电层的至少一部分并蚀刻导电层，以基本上去除导电层的转换部分，从而暴露出剩余的表面。 剩余的表面具有小于约10nm的平均表面粗糙度。 还公开了用于蚀刻导电层的系统。