公开(公告)号：US20110084264A1

公开(公告)日：2011-04-14

申请号：US12897160

申请日：2010-10-04

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Akiharu MIYANAGA ,  Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Takashi SHIMAZU

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Akiharu MIYANAGA ,  Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Takashi SHIMAZU

IPC分类号： H01L29/12

CPC分类号： H01L29/7869 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly amorphous and a crystal region containing crystal grains of In2Ga2ZnO7 in a vicinity of a surface, in which the crystal grains are oriented so that the c-axis is almost vertical with respect to the surface. Alternatively, a semiconductor device uses such an oxide semiconductor layer.

摘要翻译： 目的在于提供一种具有新的结构的氧化物半导体层，其优选用于半导体器件。 或者，另一个目的是提供一种使用具有新颖结构的氧化物半导体层的半导体器件。 氧化物半导体层包括主要为非晶质的非晶区域和在表面附近含有In2Ga2ZnO7晶体的晶体区域，其中晶粒取向为使得c轴相对于表面几乎垂直。 或者，半导体器件使用这种氧化物半导体层。

公开(公告)号：US20110043513A1

公开(公告)日：2011-02-24

申请号：US12915086

申请日：2010-10-29

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Mitsuaki OSAME ,  Takashi HAMADA ,  Tamae TAKANO ,  Yu YAMAZAKI ,  Aya ANZAI

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Mitsuaki OSAME ,  Takashi HAMADA ,  Tamae TAKANO ,  Yu YAMAZAKI ,  Aya ANZAI

IPC分类号： G09G5/00 ,  G09G3/20

CPC分类号： H01L27/1214 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/0426 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/0233 ,  H01L27/3262 ,  H01L2251/5323

摘要： A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.

摘要翻译： 一种发光器件，包括发光元件和第一晶体管，以及第二晶体管，控制要在像素中提供给所述发光元件的电流; 第一个晶体管正常工作; 第二晶体管正常断开; 第一晶体管的沟道长度比沟道宽度长; 第二晶体管的沟道长度等于或短于其沟道长度; 第一晶体管和第二晶体管的栅电极彼此连接; 第一晶体管和第二晶体管具有相同的极性; 并且发光元件，第一晶体管和第二晶体管都全部串联连接。

公开(公告)号：US20100149851A1

公开(公告)日：2010-06-17

申请号：US12711333

申请日：2010-02-24

申请人： Yoshinobu ASAMI ,  Tamae TAKANO ,  Masayuki SAKAKURA ,  Ryoji NOMURA ,  Shunpei YAMAZAKI

发明人： Yoshinobu ASAMI ,  Tamae TAKANO ,  Masayuki SAKAKURA ,  Ryoji NOMURA ,  Shunpei YAMAZAKI

IPC分类号： G11C5/06 ,  G11C8/08

CPC分类号： H01L27/1082 ,  B82Y10/00 ,  G11C11/34 ,  G11C13/0014 ,  G11C2213/79 ,  H01L23/4828 ,  H01L27/105 ,  H01L27/1203 ,  H01L27/1244 ,  H01L27/28 ,  H01L29/458 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

摘要翻译： 可以在没有接触的情况下发送和接收数据的半导体器件部分地受到一些铁路通行证，电子货币卡等的普及; 然而，提供便宜的半导体器件以进一步普及是主要的任务。 鉴于上述现有条件，本发明的半导体器件包括具有用于提供便宜的半导体器件的简单结构的存储器及其制造方法。 包括在存储器中的存储元件包括含有有机化合物的层，并且将设置在存储元件部分中的TFT的源电极或漏电极用作形成存储元件的位线的导电层。

公开(公告)号：US20160276489A1

公开(公告)日：2016-09-22

申请号：US15168291

申请日：2016-05-31

申请人： Kenichi OKAZAKI ,  Masatoshi YOKOYAMA ,  Masayuki SAKAKURA ,  Yukinori SHIMA ,  Yosuke KANZAKI ,  Hiroshi MATSUKIZONO ,  Takuya MATSUO ,  Yoshitaka YAMAMOTO

发明人： Kenichi OKAZAKI ,  Masatoshi YOKOYAMA ,  Masayuki SAKAKURA ,  Yukinori SHIMA ,  Yosuke KANZAKI ,  Hiroshi MATSUKIZONO ,  Takuya MATSUO ,  Yoshitaka YAMAMOTO

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L21/02172 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

摘要： An object is to suppress conducting-mode failures of a transistor that uses an oxide semiconductor film and has a short channel length. A semiconductor device includes a gate electrode 304, a gate insulating film 306 formed over the gate electrode, an oxide semiconductor film 308 over the gate insulating film, and a source electrode 310a and a drain electrode 310b formed over the oxide semiconductor film. The channel length L of the oxide semiconductor film is more than or equal to 1 μm and less than or equal to 50 μm. The oxide semiconductor film has a peak at a rotation angle 2θ in the vicinity of 31° in X-ray diffraction measurement.

摘要翻译： 目的是抑制使用氧化物半导体膜并具有短沟道长度的晶体管的导通模式故障。 半导体器件包括栅电极304，形成在栅电极上的栅极绝缘膜306，栅极绝缘膜上的氧化物半导体膜308以及形成在氧化物半导体膜上的源电极310a和漏电极310b。 氧化物半导体膜的沟道长度L大于等于1μm且小于等于50μm。 氧化物半导体膜在X射线衍射测定中具有在31°附近的旋转角度2θ的峰值。

公开(公告)号：US20130270554A1

公开(公告)日：2013-10-17

申请号：US13860879

申请日：2013-04-11

申请人： Masatoshi YOKOYAMA ,  Tsutomu MURAKAWA ,  Kenichi OKAZAKI ,  Masayuki SAKAKURA ,  Takuya MATSUO ,  Yosuke KANZAKI ,  Hiroshi MATSUKIZONO ,  Yoshitaka YAMAMOTO

发明人： Masatoshi YOKOYAMA ,  Tsutomu MURAKAWA ,  Kenichi OKAZAKI ,  Masayuki SAKAKURA ,  Takuya MATSUO ,  Yosuke KANZAKI ,  Hiroshi MATSUKIZONO ,  Yoshitaka YAMAMOTO

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/78696

摘要： The semiconductor conductor device includes a gate electrode 106, an oxide semiconductor film 110, a source electrode 114a and a drain electrode 114b, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface 214a of the source electrode and a second side surface 214b of the drain electrode opposite to the first side surface 214a. The oxide semiconductor film has a side surface which overlaps with the gate electrode, which has a first high resistance region positioned between a first region 206a that is the nearest to one end 314a of the first side surface 214a and a second region 206b that is the nearest to one end 314b of the second side surface 214b. The first high resistance region has a corrugated side surface or the like.

摘要翻译： 半导体导体器件包括栅电极106，氧化物半导体膜110，源极114a和漏电极114b以及形成在氧化物半导体膜中的沟道区。 沟道区形成在源电极的第一侧表面214a和与第一侧表面214a相对的漏电极的第二侧表面214b之间。 氧化物半导体膜具有与栅电极重叠的侧面，该侧面具有位于最靠近第一侧面214a的一端314a的第一区域206a和位于第一侧面214a的一端314a的第一区域206a之间的第一高电阻区域， 最靠近第二侧表面214b的一端314b。 第一高电阻区域具有波纹状的侧面等。

公开(公告)号：US20130001571A1

公开(公告)日：2013-01-03

申请号：US13615805

申请日：2012-09-14

申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Motomu KURATA ,  Hiroyuki HATA ,  Mitsuhiro ICHIJO ,  Takashi OHTSUKI ,  Aya ANZAI ,  Masayuki SAKAKURA

发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Motomu KURATA ,  Hiroyuki HATA ,  Mitsuhiro ICHIJO ,  Takashi OHTSUKI ,  Aya ANZAI ,  Masayuki SAKAKURA

IPC分类号： H01L33/08

CPC分类号： H04N5/655 ,  G06F3/02 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3276 ,  H01L33/60 ,  H01L51/0005 ,  H01L51/5246 ,  H01L51/56 ,  H01L2224/4847 ,  H01L2227/323 ,  H01L2251/5323 ,  H04N5/642

摘要： The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

摘要翻译： 本发明提供了一种以高成本低成本制造高度可靠的显示装置的方法。 根据本发明，由绝缘层覆盖由于接触开口而产生的台阶，以减小台阶，并且被加工成平缓的形状。 布线等形成为与绝缘层接触，从而增强布线等的覆盖。 此外，通过用包封材料密封包括显示装置中具有透水性的有机材料的层，可以防止由诸如水等污染物引起的发光元件的劣化。 由于密封材料形成在显示装置的驱动电路区域的一部分中，所以显示装置的边框可以变窄。

公开(公告)号：US20110140120A1

公开(公告)日：2011-06-16

申请号：US12978844

申请日：2010-12-27

申请人： Yoshinari HIGAKI ,  Masayuki SAKAKURA ,  Shunpei YAMAZAKI

发明人： Yoshinari HIGAKI ,  Masayuki SAKAKURA ,  Shunpei YAMAZAKI

IPC分类号： H01L33/08

CPC分类号： H01L29/78669 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/3248 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/786

摘要： It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

摘要翻译： 本发明的目的是在不增加布线的横截面积的情况下连接由两个不兼容的膜（ITO膜和铝膜）形成的布线，电极等，并且甚至实现更低的功率消耗 当屏幕尺寸变大时。 本发明提供一种两层结构，其包括具有比上层宽的宽度的上层和下层。 第一导电层由Ti或Mo形成，并且在第一导电层上形成具有低电阻的铝（纯铝）的第二导电层。 从上层的端部突出的下层的一部分与ITO结合。

公开(公告)号：US20110006302A1

公开(公告)日：2011-01-13

申请号：US12832334

申请日：2010-07-08

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/66969 ,  H01L29/7869 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties.

摘要翻译： 本发明的目的是制造和提供一种高度可靠的显示装置，其包括具有稳定电特性的具有高开口率的薄膜晶体管。 在具有薄膜晶体管的半导体器件的制造方法中，其中使用氧化物半导体膜形成包括沟道形成区的半导体层，用于减少作为杂质的水分等的热处理和用于提高 氧化物半导体膜（脱水或脱氢的热处理）。 此外，通过使用具有透光性的导电膜形成栅极电极层，源极电极层和漏极电极层来提高开口率。

公开(公告)号：US20100201662A1

公开(公告)日：2010-08-12

申请号：US12762469

申请日：2010-04-19

申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Masayuki SAKAKURA ,  Toru TAKAYAMA

发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Masayuki SAKAKURA ,  Toru TAKAYAMA

IPC分类号： G06F3/038 ,  H01L51/10 ,  H01L51/44

CPC分类号： H01L27/3244 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3246 ,  H01L27/3258 ,  H01L29/16 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/5008 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/566

摘要： The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.

摘要翻译： 本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。 根据本发明的具有薄膜晶体管和发光元件的发光装置包括： 栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，形成在第三无机绝缘层上的阳极层，第二有机绝缘层 与阳极层的端部重叠并且具有35度至45度的倾斜角度;形成在第二有机绝缘层的上表面和侧表面上并且在阳极层上具有开口的第四无机绝缘层，有机化合物 形成为与阳极层和第四无机绝缘层接触且含有发光材料的层，以及与含有发光材料的有机化合物层接触形成的阴极层，其中第三无机绝缘层和第四无机绝缘层 由氮化硅或氮化铝形成。

公开(公告)号：US20120299889A1

公开(公告)日：2012-11-29

申请号：US13570478

申请日：2012-08-09

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Mitsuaki OSAME ,  Takashi HAMADA ,  Tamae TAKANO ,  Yu YAMAZAKI ,  Aya ANZAI

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Mitsuaki OSAME ,  Takashi HAMADA ,  Tamae TAKANO ,  Yu YAMAZAKI ,  Aya ANZAI

IPC分类号： G09G5/00 ,  H01L27/15

CPC分类号： H01L27/1214 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/0426 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/0233 ,  H01L27/3262 ,  H01L2251/5323

摘要： A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.

摘要翻译： 一种发光器件，包括发光元件和第一晶体管，以及第二晶体管，控制要在像素中提供给所述发光元件的电流; 第一个晶体管正常工作; 第二晶体管正常断开; 第一晶体管的沟道长度比沟道宽度长; 第二晶体管的沟道长度等于或短于其沟道长度; 第一晶体管和第二晶体管的栅电极彼此连接; 第一晶体管和第二晶体管具有相同的极性; 并且发光元件，第一晶体管和第二晶体管都全部串联连接。