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788 条记录 (耗时 0.047 秒)

    Semiconductor Device
    1.
    发明申请
    Semiconductor Device 有权
    半导体器件

    公开(公告)号：US20110140120A1

    公开(公告)日：2011-06-16

    申请号：US12978844

    申请日：2010-12-27

    申请人： Yoshinari HIGAKI ,  Masayuki SAKAKURA ,  Shunpei YAMAZAKI

    发明人： Yoshinari HIGAKI ,  Masayuki SAKAKURA ,  Shunpei YAMAZAKI

    IPC分类号： H01L33/08

    CPC分类号： H01L29/78669 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/3248 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/786

    摘要： It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

    摘要翻译： 本发明的目的是在不增加布线的横截面积的情况下连接由两个不兼容的膜（ITO膜和铝膜）形成的布线，电极等，并且甚至实现更低的功率消耗 当屏幕尺寸变大时。 本发明提供一种两层结构，其包括具有比上层宽的宽度的上层和下层。 第一导电层由Ti或Mo形成，并且在第一导电层上形成具有低电阻的铝（纯铝）的第二导电层。 从上层的端部突出的下层的一部分与ITO结合。

    Light Emitting Device and Manufacturing Method Thereof
    2.
    发明申请
    Light Emitting Device and Manufacturing Method Thereof 有权
    发光装置及其制造方法

    公开(公告)号：US20130140536A1

    公开(公告)日：2013-06-06

    申请号：US13672861

    申请日：2012-11-09

    申请人： Shunpei YAMAZAKI ,  Takeshi NODA ,  Yoshinari HIGAKI

    发明人： Shunpei YAMAZAKI ,  Takeshi NODA ,  Yoshinari HIGAKI

    IPC分类号： H01L51/52

    CPC分类号： H01L51/56 ,  H01L27/3244 ,  H01L27/3246 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5209 ,  H01L51/5218 ,  H01L51/5271 ,  H01L51/5284 ,  H01L2251/56

    摘要： Disclosed is a light emission element including, on a substrate having an insulative surface, a first electrode connected with a thin film transistor and an insulator covering the end of the first electrode, a layer containing an organic compound in contact with the first electrode, a second electrode in contact with the layer containing the organic compound. The first electrode has an inclined surface and the inclined surface reflects emitted light from the layer containing the organic compound. Further, a light absorbing multi-layered film absorbing external light is disposed on the portion of the first electrode covered with the insulator. The light absorbing multi-layered film comprising at least has a three-layered structure comprising a light transmitting film, a film partially absorbing light and a light transmitting film.

    摘要翻译： 公开了一种发光元件，在具有绝缘表面的基板上，包括与薄膜晶体管连接的第一电极和覆盖第一电极的端部的绝缘体，包含与第一电极接触的有机化合物的层， 第二电极与含有机化合物的层接触。 第一电极具有倾斜表面，并且倾斜表面反射来自含有机化合物的层的发射光。 此外，吸收外部光的吸光多层膜设置在被绝缘体覆盖的第一电极的部分上。 所述吸光性多层膜至少具有包含透光膜，膜部分吸收光和透光膜的三层结构。

    LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME
    5.
    发明申请
    LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号：US20110180801A1

    公开(公告)日：2011-07-28

    申请号：US13082104

    申请日：2011-04-07

    申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Masayuki SAKAKURA ,  Toru TAKAYAMA

    发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Masayuki SAKAKURA ,  Toru TAKAYAMA

    IPC分类号： H01L51/52

    CPC分类号： H01L27/3244 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3246 ,  H01L27/3258 ,  H01L29/16 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/5008 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/566

    摘要： The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.

    摘要翻译： 本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。 根据本发明的具有薄膜晶体管和发光元件的发光装置包括： 栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，形成在第三无机绝缘层上的阳极层，第二有机绝缘层 与阳极层的端部重叠并且具有35度至45度的倾斜角度;形成在第二有机绝缘层的上表面和侧表面上并且在阳极层上具有开口的第四无机绝缘层，有机化合物 形成为与阳极层和第四无机绝缘层接触且含有发光材料的层，以及与含有发光材料的有机化合物层接触形成的阴极层，其中第三无机绝缘层和第四无机绝缘层 由氮化硅或氮化铝形成。