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    MEMORY DEVICE AND MANUFACTURING METHOD THE SAME
    2.
    发明申请
    MEMORY DEVICE AND MANUFACTURING METHOD THE SAME 有权
    存储器件和制造方法相同

    公开(公告)号：US20120273778A1

    公开(公告)日：2012-11-01

    申请号：US13546013

    申请日：2012-07-11

    申请人： Yoshinobu ASAMI ,  Tamae TAKANO ,  Masayuki SAKAKURA ,  Ryoji NOMURA ,  Shunpei YAMAZAKI

    发明人： Yoshinobu ASAMI ,  Tamae TAKANO ,  Masayuki SAKAKURA ,  Ryoji NOMURA ,  Shunpei YAMAZAKI

    IPC分类号： H01L29/12

    CPC分类号： H01L27/1082 ,  B82Y10/00 ,  G11C11/34 ,  G11C13/0014 ,  G11C2213/79 ,  H01L23/4828 ,  H01L27/105 ,  H01L27/1203 ,  H01L27/1244 ,  H01L27/28 ,  H01L29/458 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

    摘要翻译： 可以在没有接触的情况下发送和接收数据的半导体器件部分地受到一些铁路通行证，电子货币卡等的普及; 然而，提供便宜的半导体器件以进一步普及是主要的任务。 鉴于上述现有条件，本发明的半导体器件包括具有用于提供便宜的半导体器件的简单结构的存储器及其制造方法。 包括在存储器中的存储元件包括含有有机化合物的层，并且将设置在存储元件部分中的TFT的源电极或漏电极用作形成存储元件的位线的导电层。

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20100055896A1

    公开(公告)日：2010-03-04

    申请号：US12618161

    申请日：2009-11-13

    申请人： Hiroko ABE ,  Mikio YUKAWA ,  Tamae TAKANO ,  Yoshinobu ASAMI ,  Kiyoshi KATO ,  Ryoji NOMURA ,  Yoshitaka MORIYA

    发明人： Hiroko ABE ,  Mikio YUKAWA ,  Tamae TAKANO ,  Yoshinobu ASAMI ,  Kiyoshi KATO ,  Ryoji NOMURA ,  Yoshitaka MORIYA

    IPC分类号： H01L21/3205

    CPC分类号： H01L27/1266 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/04 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/13 ,  H01L27/283 ,  H01L51/0059

    摘要： It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.

    摘要翻译： 本发明的一个目的是提供一种挥发性有机存储器，其中除了在制造期间可以写入数据，并且可以防止通过改写伪造，并提供包括这种有机存储器的半导体器件。 本发明的特征在于，半导体器件包括沿第一方向延伸的多个位线; 沿与第一方向不同的第二方向延伸的多个字线; 存储单元阵列，包括多个存储单元，每个存储单元分别设置在位线和字线的交点之一处; 以及设置在存储单元中的存储元件，其中存储元件包括位线，有机化合物层和字线，有机化合物层包括混合有无机化合物和有机化合物的层。

    CRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    CRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME 有权
    晶体半导体薄膜，其制造方法，半导体器件及其制造方法

    公开(公告)号：US20100038716A1

    公开(公告)日：2010-02-18

    申请号：US12574162

    申请日：2009-10-06

    申请人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Tamae TAKANO

    发明人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Tamae TAKANO

    IPC分类号： H01L29/786

    CPC分类号： H01L29/04 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675

    摘要： There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, and a heat treatment is carried out to obtain a crystalline semiconductor thin film. After the crystalline semiconductor thin film is irradiated with ultraviolet light or infrared light, a heat treatment at a temperature of 900 to 1200° C. is carried out in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.

    摘要翻译： 提供了形成单晶半导体薄膜或基本单晶半导体薄膜的技术。 将非晶半导体薄膜的促进结晶化的催化剂元素添加到非晶半导体薄膜中，进行热处理，得到结晶半导体薄膜。 在用紫外线或红外线照射结晶半导体薄膜之后，在还原气氛中进行900〜1200℃的热处理。 结晶半导体薄膜的表面通过该工序极其平坦化，晶粒和晶界的缺陷消失，得到单晶半导体薄膜或大致单晶半导体薄膜。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US20120037978A1

    公开(公告)日：2012-02-16

    申请号：US13280643

    申请日：2011-10-25

    申请人： Tamae TAKANO ,  Shunpei YAMAZAKI

    发明人： Tamae TAKANO ,  Shunpei YAMAZAKI

    IPC分类号： H01L29/792

    CPC分类号： H01L27/12 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

    摘要： A nonvolatile semiconductor memory device is provided in such a manner that a semiconductor layer is formed over a substrate, a charge accumulating layer is formed over the semiconductor layer with a first insulating layer interposed therebetween, and a gate electrode is provided over the charge accumulating layer with a second insulating layer interposed therebetween. The semiconductor layer includes a channel formation region provided in a region overlapping with the gate electrode, a first impurity region for forming a source region or drain region, which is provided to be adjacent to the channel formation region, and a second impurity region provided to be adjacent to the channel formation region and the first impurity region. A conductivity type of the first impurity region is different from that of the second impurity region.

    摘要翻译： 以半导体层形成在基板上的方式设置非易失性半导体存储元件，在半导体层上形成电荷累积层，其间插入有第一绝缘层，在电荷累积层之上设置栅电极 其间插入有第二绝缘层。 半导体层包括设置在与栅电极重叠的区域中的沟道形成区域，用于形成与沟道形成区域相邻的源极区域或漏极区域的第一杂质区域和设置成与沟道形成区域相邻的第二杂质区域 与沟道形成区域和第一杂质区域相邻。 第一杂质区的导电类型与第二杂质区不同。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US20110095354A1

    公开(公告)日：2011-04-28

    申请号：US12977911

    申请日：2010-12-23

    申请人： Tamae TAKANO ,  Shunpei YAMAZAKI

    发明人： Tamae TAKANO ,  Shunpei YAMAZAKI

    IPC分类号： H01L29/792

    CPC分类号： H01L27/12 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

    摘要： A nonvolatile semiconductor memory device is provided in such a manner that a semiconductor layer is formed over a substrate, a charge accumulating layer is formed over the semiconductor layer with a first insulating layer interposed therebetween, and a gate electrode is provided over the charge accumulating layer with a second insulating layer interposed therebetween. The semiconductor layer includes a channel formation region provided in a region overlapping with the gate electrode, a first impurity region for forming a source region or drain region, which is provided to be adjacent to the channel formation region, and a second impurity region provided to be adjacent to the channel formation region and the first impurity region. A conductivity type of the first impurity region is different from that of the second impurity region.

    摘要翻译： 以半导体层形成在基板上的方式设置非易失性半导体存储元件，在半导体层上形成电荷累积层，其间插入有第一绝缘层，在电荷累积层之上设置栅电极 其间插入有第二绝缘层。 半导体层包括设置在与栅电极重叠的区域中的沟道形成区域，用于形成与沟道形成区域相邻的源极区域或漏极区域的第一杂质区域和设置成与沟道形成区域相邻的第二杂质区域 与沟道形成区域和第一杂质区域相邻。 第一杂质区的导电类型与第二杂质区不同。

    CRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME
    10.
    发明申请
    CRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME 有权
    晶体半导体薄膜，其制造方法，半导体器件及其制造方法

    公开(公告)号：US20120108049A1

    公开(公告)日：2012-05-03

    申请号：US13338366

    申请日：2011-12-28

    申请人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Tamae TAKANO

    发明人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Tamae TAKANO

    IPC分类号： H01L21/28

    CPC分类号： H01L29/04 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675

    摘要： There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, and a heat treatment is carried out to obtain a crystalline semiconductor thin film. After the crystalline semiconductor thin film is irradiated with ultraviolet light or infrared light, a heat treatment at a temperature of 900 to 1200° C. is carried out in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.

    摘要翻译： 提供了形成单晶半导体薄膜或基本单晶半导体薄膜的技术。 将非晶半导体薄膜的促进结晶化的催化剂元素添加到非晶半导体薄膜中，进行热处理，得到结晶半导体薄膜。 在用紫外线或红外线照射结晶半导体薄膜之后，在还原气氛中进行900〜1200℃的热处理。 结晶半导体薄膜的表面通过该工序极其平坦化，晶粒和晶界的缺陷消失，得到单晶半导体薄膜或大致单晶半导体薄膜。