公开(公告)号：US09214474B2

公开(公告)日：2015-12-15

申请号：US13535506

申请日：2012-06-28

申请人： Shunpei Yamazaki

发明人： Shunpei Yamazaki

IPC分类号： H01L29/78 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/7782 ,  H01L29/78603 ,  H01L29/78696

摘要： To provide a transistor including an oxide semiconductor layer and having electric characteristics required depending on an intended use and provide a semiconductor device including the transistor, in a transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating film, and a gate electrode are stacked in this order over an oxide semiconductor insulating film, an oxide semiconductor stack layer which includes at least two oxide semiconductor layers with energy gaps different from each other and a mixed region therebetween is used as the semiconductor layer.

摘要翻译： 为了提供一种包括氧化物半导体层并且具有根据预期用途需要的电特性的晶体管，并且在包括半导体层，源极和漏极电极层，栅极绝缘膜和 栅电极依次堆叠在氧化物半导体绝缘膜上，氧化物半导体堆叠层，其包括具有彼此不同的能隙的至少两个氧化物半导体层以及它们之间的混合区域作为半导体层。

公开(公告)号：US09196739B2

公开(公告)日：2015-11-24

申请号：US13074635

申请日：2011-03-29

申请人： Shunpei Yamazaki

发明人： Shunpei Yamazaki

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/78606

摘要： A transistor is provided in which the top surface portion of an oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film, and an insulating film containing a different constituent from the metal oxide film and the oxide semiconductor film is formed in contact with a surface of the metal oxide film, which is opposite to the surface in contact with the oxide semiconductor film. In addition, the oxide semiconductor film used for the active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) through heat treatment in which impurities such as hydrogen, moisture, hydroxyl, and hydride are removed from the oxide semiconductor and oxygen which is one of main component materials of the oxide semiconductor is supplied and is also reduced in a step of removing the impurities.

摘要翻译： 提供了一种晶体管，其中氧化物半导体膜的顶表面部分设置有含有与氧化物半导体膜类似的组成的金属氧化物膜，以及含有与金属氧化物膜和氧化物不同的成分的绝缘膜 半导体膜形成为与与氧化物半导体膜接触的表面相反的金属氧化物膜的表面接触。 此外，用于晶体管的有源层的氧化物半导体膜是通过热处理而被高度纯化成电i型（本征的）的氧化物半导体膜，其中从其中去除诸如氢，水分，羟基和氢化物的杂质 供给作为氧化物半导体的主要成分材料之一的氧化物半导体和氧，并且在除去杂质的工序中还可以进行还原。

公开(公告)号：US09171805B2

公开(公告)日：2015-10-27

申请号：US11054953

申请日：2005-02-11

申请人： Kiyoshi Kato ,  Shunpei Yamazaki

发明人： Kiyoshi Kato ,  Shunpei Yamazaki

IPC分类号： H01L29/04 ,  H01L29/76 ,  H01L23/544 ,  H01L27/12

CPC分类号： H01L23/544 ,  H01L27/12 ,  H01L27/1214 ,  H01L2223/54433 ,  H01L2223/5444 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Provided is a substrate identification circuit that generates a numeric value, whose duplication is difficult and which is proper to a substrate, at low cost and a semiconductor device having such a substrate identification circuit. A substrate identification circuit 304 is produced by utilizing variations in characteristics among TFTs formed on a substrate having an insulating surface. The substrate identification circuit 304 includes a plurality of proper bit generating circuits, each of which is constructed from a plurality of TFTs and outputs a one-bit random number based on variations in characteristics among the plurality of TFTs. The substrate identification circuit generates a numeric value proper to the substrate using the one-bit random number. The substrate identification circuit may include a circuit that makes a judgment by comparing the numeric value proper to the substrate with an identification number inputted from the outside.

公开(公告)号：US09136530B2

公开(公告)日：2015-09-15

申请号：US13113217

申请日：2011-05-23

申请人： Shunpei Yamazaki

发明人： Shunpei Yamazaki

IPC分类号： H01M4/04 ,  H01M4/1395 ,  H01M4/525 ,  H01G11/24 ,  H01M4/52 ,  H01M4/24 ,  H01G11/28 ,  H01G11/26 ,  H01M4/38

CPC分类号： H01M4/1395 ,  H01G11/24 ,  H01G11/26 ,  H01G11/28 ,  H01M4/04 ,  H01M4/0404 ,  H01M4/0428 ,  H01M4/242 ,  H01M4/386 ,  H01M4/52 ,  H01M4/521 ,  H01M4/523 ,  H01M4/525 ,  Y02E60/122 ,  Y02P70/54 ,  Y10T29/49108

摘要： An energy storage device whose discharge capacity can be improved and a method for manufacturing the energy storage device are provided. A method for manufacturing an energy storage device, in which a metal element is dispersed over a current collector, and a crystalline silicon layer including a whisker is formed as an active material layer over the surface of the current collector on which the metal element is dispersed by low pressure chemical vapor deposition (LPCVD) in which heating is performed using a deposition gas containing silicon. Having whiskers in the active material layer as described above, the surface area of the active material layer is increased; thus, the discharge capacity of the energy storage device can be increased.

摘要翻译： 能够提高放电容量的能量储存装置和能量储存装置的制造方法。 在金属元素分散的集电体的表面上形成作为活性物质层的制造其中金属元素分散在集电体上的能量存储装置的方法和包括晶须的晶体硅层 通过低压化学气相沉积（LPCVD），其中使用含硅的沉积气体进行加热。 如上所述在活性物质层中具有晶须，活性物质层的表面积增加; 从而可以提高储能装置的放电容量。

公开(公告)号：US09123912B2

公开(公告)日：2015-09-01

申请号：US13420030

申请日：2012-03-14

申请人： Shunpei Yamazaki ,  Nobuharu Ohsawa

发明人： Shunpei Yamazaki ,  Nobuharu Ohsawa

IPC分类号： H01L51/56 ,  H01L51/52 ,  H01L51/50

CPC分类号： H01L51/5265 ,  H01L51/5036 ,  H01L51/56 ,  H01L2251/5315 ,  H01L2251/5361 ,  H01L2251/558

摘要： To provide a method for manufacturing light-emitting devices with different emission colors using EL layers formed using the same apparatus and condition, and a light-emitting device with high added value. A substrate in which a transparent conductive layer is formed in advance on a surface over which an EL layer is to be formed and another substrate in which a transparent conductive layer with a thickness different from that of the transparent conductive layer are prepared, and EL layers are formed over the substrates using the same apparatus and condition. Thus, even when the EL layers are formed using the same apparatus and condition, optical path lengths of the substrates can be different.

摘要翻译： 为了提供一种使用使用相同装置和条件形成的EL层来制造具有不同发射颜色的发光器件的方法和具有高附加值的发光器件。 预先在要形成EL层的表面上形成透明导电层的衬底和其中制备具有与透明导电层的厚度不同的透明导电层的另一衬底，以及EL层 使用相同的装置和条件在基板上形成。 因此，即使使用相同的装置和条件形成EL层，也可以使基板的光路长度不同。

公开(公告)号：US09117415B2

公开(公告)日：2015-08-25

申请号：US11115263

申请日：2005-04-27

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masaaki Hiroki ,  Munehiro Azami ,  Mitsuaki Osame ,  Yutaka Shionoiri ,  Shou Nagao

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masaaki Hiroki ,  Munehiro Azami ,  Mitsuaki Osame ,  Yutaka Shionoiri ,  Shou Nagao

IPC分类号： G09G3/36

CPC分类号： G09G3/3648 ,  G09G3/3651 ,  G09G3/3688 ,  G09G2310/027 ,  G09G2320/0271 ,  G09G2320/0276 ,  G09G2320/0285

摘要： A display device comprises a display panel composed of a pixel portion in which a plurality of TFTs are arranged in matrix, a source driver, and a gate driver, an image signal processing circuit for processing an image signal input from an external, and a control circuit for controlling the display panel and the image signal processing circuit. The image signal processing circuit corrects the image signal on the basis of a correction table. By feeding the display panel with the corrected image signal, the display device can provide a good quality image.

摘要翻译： 显示装置包括由矩阵状的多个TFT排列的像素部分，源极驱动器和栅极驱动器构成的显示面板，用于处理从外部输入的图像信号的图像信号处理电路，以及控制部 用于控制显示面板和图像信号处理电路的电路。 图像信号处理电路基于校正表来校正图像信号。 通过向显示面板馈送校正后的图像信号，显示装置可以提供高质量的图像。

公开(公告)号：US09112224B2

公开(公告)日：2015-08-18

申请号：US13163879

申请日：2011-06-20

申请人： Shunpei Yamazaki

发明人： Shunpei Yamazaki

IPC分类号： H01M4/38 ,  H01G11/06 ,  H01G11/50 ,  H01M4/134 ,  H01M4/36 ,  H01M4/40 ,  H01M4/04 ,  H01M10/052 ,  H01M4/02

CPC分类号： H01M4/386 ,  H01G11/06 ,  H01G11/30 ,  H01G11/50 ,  H01G11/66 ,  H01G11/76 ,  H01M4/0404 ,  H01M4/0419 ,  H01M4/0426 ,  H01M4/0471 ,  H01M4/134 ,  H01M4/366 ,  H01M4/405 ,  H01M4/661 ,  H01M10/052 ,  H01M2004/021 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54 ,  Y02T10/7011 ,  Y02T10/7022 ,  Y10T29/417 ,  Y10T29/49108 ,  Y10T29/49115

摘要： Provided are an energy storage device including an electrode in which lithium is introduced into a silicon layer and a method for manufacturing the energy storage device. A silicon layer is formed over a current collector, a solution including lithium is applied on the silicon layer, and heat treatment is performed thereon; thus, at least lithium can be introduced into the silicon layer. By using the solution including lithium, even when the silicon layer includes a plurality of silicon microparticles, the solution including lithium can enter a space between the microparticles and lithium can be introduced into the silicon microparticles which are in contact with the solution including lithium. Moreover, even when the silicon layer is a thin silicon film or includes a plurality of whiskers or whisker groups, the solution can be uniformly applied; accordingly, lithium can be included in silicon easily.

摘要翻译： 提供了一种能量存储装置，其包括将锂引入硅层的电极和能量存储装置的制造方法。 在集电器上形成硅层，将包含锂的溶液施加在硅层上，对其进行热处理; 因此，至少可以将锂引入到硅层中。 通过使用包含锂的溶液，即使当硅层包括多个硅微粒时，包含锂的溶液可以进入微粒之间的空间，并且可以将锂引入与包括锂的溶液接触的硅微粒中。 此外，即使当硅层是薄的硅膜或者包括多个晶须或晶须基团时，也可以均匀地施加溶液; 因此，锂可以容易地包含在硅中。

公开(公告)号：US09112036B2

公开(公告)日：2015-08-18

申请号：US13482398

申请日：2012-05-29

申请人： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato ,  Shunpei Yamazaki

发明人： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato ,  Shunpei Yamazaki

IPC分类号： H01L21/8232 ,  H01L29/786

CPC分类号： H01L29/7869

摘要： A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. In a manufacturing method of the transistor including the oxide semiconductor film including a channel formation region, an insulating film including a metal element is formed over the oxide semiconductor film, and low-resistance regions in which a dopant added through the insulating film by an implantation method is included are formed in the oxide semiconductor film. The channel formation region is positioned between the low-resistance regions in the channel length direction.

摘要翻译： 提供了具有良好的导通状态特性的使用氧化物半导体的晶体管。 提供了包括能够进行高速响应和高速运行的晶体管的高性能半导体器件。 在包括具有沟道形成区域的氧化物半导体膜的晶体管的制造方法中，在氧化物半导体膜上形成包含金属元素的绝缘膜，以及通过注入在绝缘膜上添加的掺杂剂的低电阻区域 包含的方法形成在氧化物半导体膜中。 沟道形成区域位于沟道长度方向的低电阻区域之间。

公开(公告)号：US09099395B2

公开(公告)日：2015-08-04

申请号：US13366933

申请日：2012-02-06

申请人： Masayuki Sakakura ,  Shunpei Yamazaki

发明人： Masayuki Sakakura ,  Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L27/28 ,  H01L29/786 ,  H01L27/12 ,  H01L29/423

CPC分类号： H01L29/78645 ,  H01L27/12 ,  H01L27/124 ,  H01L27/283 ,  H01L29/42384 ,  H01L29/78696

摘要： It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.

摘要翻译： 本发明的目的是提供一种具有新的多重结构的晶体管，其中提高了操作特性和可靠性。 在具有多重结构的晶体管中，其包括彼此电连接的两个栅电极和包括在源区和漏区之间串联连接的两个沟道区的半导体层，并且在两者之间形成高浓度杂质区 渠道区域; 与源极区域相邻的沟道区域的沟道长度比与漏极区域相邻的沟道区域的沟道长度长。

公开(公告)号：US09093328B2

公开(公告)日：2015-07-28

申请号：US12938533

申请日：2010-11-03

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake

IPC分类号： H01L29/12 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02

CPC分类号： H01L27/1225 ,  H01L21/02603 ,  H01L27/0883 ,  H01L27/1251 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/045 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

摘要： An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

摘要翻译： 晶体管使用本征或基本上固有的并且包括氧化物半导体层的表面部分中的结晶区域的氧化物半导体层。 使用从氧化物半导体去除作为电子给体（供体）的杂质并且具有比硅半导体更大的能隙的本征或本质上的本征半导体。 可以通过控制一对导电膜的电位来控制晶体管的电特性，所述一对导电膜相对于氧化物半导体层彼此相对设置，每个具有布置在其间的绝缘膜，使得沟道的位置 确定在氧化物半导体层中形成的氧化物半导体层。