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21.发明申请SEMICONDUCTOR FILM, SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME 有权半导体膜，半导体元件，半导体器件及其制造方法公开(公告)号：US20120132907A1
公开(公告)日：2012-05-31
申请号：US13303543
申请日：2011-11-23
CPC分类号： H01L29/7869 , C04B35/58 , C04B2235/3284 , C04B2235/3286 , H01L21/02472 , H01L21/02483 , H01L21/02513 , H01L21/02554 , H01L21/02565 , H01L21/0259 , H01L29/78681
摘要： One of objects is to provide a semiconductor film having stable characteristics. Further, one of objects is to provide a semiconductor element having stable characteristics. Further, one of objects is to provide a semiconductor device having stable characteristics. Specifically, a structure which includes a seed crystal layer (seed layer) including crystals each having a first crystal structure, one of surfaces of which is in contact with an insulating surface, and an oxide semiconductor film including crystals growing anisotropically, which is on the other surface of the seed crystal layer (seed layer) may be provided. With such a heterostructure, electric characteristics of the semiconductor film can be stabilized.
摘要翻译： 目的之一是提供具有稳定特性的半导体膜。 此外，目的之一是提供具有稳定特性的半导体元件。 此外，目的之一是提供一种具有稳定特性的半导体器件。 具体而言，包括具有第一晶体结构的晶体的晶种层（晶种层）的晶种层（其表面与绝缘面接触）的结构，以及包含各向异性生长的晶体的氧化物半导体膜， 可以提供晶种层（籽晶层）的其他表面。 利用这种异质结构，可以使半导体膜的电特性稳定。
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22.发明申请Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Devices 有权发光元件，发光器件，照明器件和电子器件公开(公告)号：US20120126212A1
公开(公告)日：2012-05-24
申请号：US13303637
申请日：2011-11-23
CPC分类号： H01L51/5012 , H01L51/006 , H01L51/0072 , H01L51/5016 , H01L51/506 , H01L51/5203 , H01L2251/558
摘要： A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided.
摘要翻译： 至少包括具有荧光发光性的发光中心材料的单分子层的发光元件和包含载体（电子或空穴） - 传输特性的主体材料和带隙大于的带隙的单分子层 在一对电极之间的发光中心材料的带隙（注意，带隙是指HOMO能级和LUMO能级之间的能量差），其中包括主体材料的单分子层和包括主体材料的单分子层 发光中心材料共享相同的界面。
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23.发明授权Method for manufacturing a semiconductor device comprising single- and multi-component oxide semiconductor layers 有权包括单组分和多组分氧化物半导体层的半导体器件的制造方法公开(公告)号：US09034104B2
公开(公告)日：2015-05-19
申请号：US12968367
申请日：2010-12-15
IPC分类号： C30B1/02 , H01L21/02 , H01L29/04 , H01L29/786 , H01L29/66
CPC分类号： H01L21/02631 , H01L21/02554 , H01L21/02565 , H01L29/045 , H01L29/66969 , H01L29/7869
摘要： A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A single-component oxide semiconductor layer is formed over a substrate; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a single-component oxide semiconductor layer including single crystal regions is formed; and a multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.
摘要翻译： 可以使用更大的衬底，并且可以通过形成具有高结晶度的氧化物半导体层来制造具有期望的高场敏性迁移率的晶体管，由此大尺寸显示装置，高性能半导体器件， 等可以投入实际使用。 在基板上形成单组分氧化物半导体层; 然后通过在500℃至1000℃（包括端值，优选550℃至750℃）进行热处理，从表面向内部进行晶体生长，从而包括单组分氧化物半导体层 形成单晶区; 并且包括单晶区域的多成分氧化物半导体层堆叠在包括单晶区域的单组分氧化物半导体层上。
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公开(公告)号：US08728883B2
公开(公告)日：2014-05-20
申请号：US13297474
申请日：2011-11-16
CPC分类号： H01L29/06 , H01L21/0242 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02502 , H01L21/02513 , H01L21/02554 , H01L21/02565 , H01L21/0259 , H01L29/36 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.
摘要翻译： 通过向其中使用氧化物半导体膜的通道的晶体管提供稳定的电特性来制造高度可靠的半导体器件。 通过热处理可以具有第一晶体结构的氧化物半导体膜和通过热处理可以具有第二晶体结构的氧化物半导体膜被形成为堆叠，然后进行热处理; 因此，通过使用具有第二晶体结构的氧化物半导体膜作为种子发生晶体生长，从而形成具有第一晶体结构的氧化物半导体膜。 以这种方式形成的氧化物半导体膜用于晶体管的有源层。
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公开(公告)号：US08686425B2
公开(公告)日：2014-04-01
申请号：US13584840
申请日：2012-08-14
IPC分类号： H01L31/112 , H01L21/00
CPC分类号： H01L29/66742 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02502 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02667 , H01L27/1225 , H01L29/66969 , H01L29/7869
摘要： A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.
摘要翻译： 可以使用较大的衬底，并且可以通过形成具有高结晶度的氧化物半导体层来制造具有期望的高场敏性迁移率的晶体管，由此大尺寸显示装置，高性能半导体器件， 等可以投入实际使用。 在衬底上形成第一多组分氧化物半导体层，并在其上形成单组分氧化物半导体层; 然后通过在500℃至1000℃（包括端值）进行热处理从表面向内部进行晶体生长，优选550℃至750℃，从而使第一多组分氧化物半导体层 包括单晶区域和形成包括单晶区域的单组分氧化物半导体层; 并且包括单晶区域的第二多分量氧化物半导体层堆叠在包括单晶区域的单组分氧化物半导体层上。
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26.发明授权Method for manufacturing an oxide-based semiconductor thin film transistor (TFT) including out diffusing hydrogen or moisture from the oxide semiconductor layer into an adjacent insulating layer which contains a halogen element 有权一种用于制造氧化物基半导体薄膜晶体管（TFT）的方法，该氧化物基半导体薄膜晶体管包括将氢或水分从氧化物半导体层扩散到包含卤素元素的相邻绝缘层中公开(公告)号：US08642412B2
公开(公告)日：2014-02-04
申请号：US12906175
申请日：2010-10-18
IPC分类号： H01L21/385
CPC分类号： H01L21/02664 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L23/564 , H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H2O) is eliminated from an oxide semiconductor layer with use of a halogen element typified by fluorine or chlorine, so that the impurity concentration in the oxide semiconductor layer is reduced. A gate insulating layer and/or an insulating layer provided in contact with the oxide semiconductor layer can be formed to contain a halogen element. In addition, a halogen element may be attached to the oxide semiconductor layer through plasma treatment under an atmosphere of a gas containing a halogen element.
摘要翻译： 本发明的目的是提供一种其中使用氧化物半导体的稳定电特性的半导体器件。 使用以氟或氯为代表的卤素元素，从氧化物半导体层中除去氢或水分等杂质（例如氢原子或含有氢原子的化合物，例如H 2 O），使得杂质浓度 氧化物半导体层减少。 可以形成与氧化物半导体层接触设置的栅极绝缘层和/或绝缘层以含有卤素元素。 此外，卤素元素可以在含有卤素元素的气体的气氛下通过等离子体处理附着到氧化物半导体层。
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公开(公告)号：US08530285B2
公开(公告)日：2013-09-10
申请号：US12976388
申请日：2010-12-22
IPC分类号： H01L21/00 , H01L21/336 , H01L27/108
CPC分类号： H01L29/66742 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02502 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02667 , H01L27/1225 , H01L29/66969 , H01L29/7869
摘要： A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.
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28.发明授权Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same 有权半导体膜，半导体元件，半导体器件及其制造方法公开(公告)号：US08809852B2
公开(公告)日：2014-08-19
申请号：US13303543
申请日：2011-11-23
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , C04B35/58 , C04B2235/3284 , C04B2235/3286 , H01L21/02472 , H01L21/02483 , H01L21/02513 , H01L21/02554 , H01L21/02565 , H01L21/0259 , H01L29/78681
摘要： One of objects is to provide a semiconductor film having stable characteristics. Further, one of objects is to provide a semiconductor element having stable characteristics. Further, one of objects is to provide a semiconductor device having stable characteristics. Specifically, a structure which includes a seed crystal layer (seed layer) including crystals each having a first crystal structure, one of surfaces of which is in contact with an insulating surface, and an oxide semiconductor film including crystals growing anisotropically, which is on the other surface of the seed crystal layer (seed layer) may be provided. With such a heterostructure, electric characteristics of the semiconductor film can be stabilized.
摘要翻译： 目的之一是提供具有稳定特性的半导体膜。 此外，目的之一是提供具有稳定特性的半导体元件。 此外，目的之一是提供一种具有稳定特性的半导体器件。 具体而言，包括具有第一晶体结构的晶体的晶种层（晶种层）的晶种层（其表面与绝缘面接触）的结构，以及包含各向异性生长的晶体的氧化物半导体膜， 可以提供晶种层（籽晶层）的其他表面。 利用这种异质结构，可以使半导体膜的电特性稳定。
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公开(公告)号：US09635313B2
公开(公告)日：2017-04-25
申请号：US13538560
申请日：2012-06-29
CPC分类号： G06F3/04845 , G06F3/1454 , G06F17/30056 , G06F2203/04803 , G06F2203/04806 , G06Q10/10 , H04L12/1813 , H04L12/1822 , H04L12/1827 , H04L65/403 , H04M2250/62 , H04N7/15
摘要： An information processing system and a method for operating same are provided. The information processing system includes a first information processing apparatus and a second information processing apparatus. The first information processing apparatus is configured to display a first synchronous image in a first window, the first window having an operation right. The second information processing apparatus has a synchronous state or an asynchronous state. The second information processing apparatus is configured to: display a second synchronous image; in response to a first request, switch from the synchronous state to the asynchronous state; and in response to a second request, switch from the asynchronous state to the synchronous state.
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30.发明授权Electronic device including memory arrays with variable resistance storage elements arranged on different sides of a word line driving unit 有权电子设备包括具有布置在字线驱动单元的不同侧上的可变电阻存储元件的存储器阵列公开(公告)号：US09535834B2
公开(公告)日：2017-01-03
申请号：US14563645
申请日：2014-12-08
申请人： Dong-Keun Kim , Masahiro Takahashi , Tsuneo Inaba
发明人： Dong-Keun Kim , Masahiro Takahashi , Tsuneo Inaba
IPC分类号： G06F12/08 , G11C13/00 , G11C11/4099 , G11C11/16
CPC分类号： G11C13/004 , G06F3/061 , G06F3/0656 , G06F3/0679 , G06F12/0207 , G06F12/08 , G06F12/0875 , G06F2212/2024 , G06F2212/452 , G06F2212/60 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/4099 , G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/0026 , G11C2013/0054 , G11C2213/79 , G11C2213/82
摘要： An electronic device includes a semiconductor device, wherein the semiconductor device includes: a word line driving unit for driving a plurality of word lines; a first cell array arranged at one side of the word line driving unit; a second cell array arranged at the other side of the word line driving unit; a bias voltage generation unit, arranged between the first cell array and the second cell array, for generating a bias voltage based on currents flowing through the first reference resistance element included in the first cell array and the second reference resistance element included in the second cell array; a first read control unit; and a second read control unit.
摘要翻译： 电子设备包括半导体器件，其中半导体器件包括：用于驱动多个字线的字线驱动单元; 布置在字线驱动单元的一侧的第一单元阵列; 布置在所述字线驱动单元的另一侧的第二单元阵列; 布置在所述第一单元阵列和所述第二单元阵列之间的偏置电压产生单元，用于基于流过所述第一单元阵列中包括的所述第一参考电阻元件的电流和所述第二单元中包括的所述第二参考电阻元件来产生偏置电压 阵列 第一读取控制单元; 和第二读取控制单元。
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