公开(公告)号：US20170229387A1

公开(公告)日：2017-08-10

申请号：US15434599

申请日：2017-02-16

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Wen-Tsung Tseng ,  Yi-Che Lai ,  Shih-Kuang Chiu ,  Mao-Hua Yeh

IPC: H01L23/498 ,  H01L23/13 ,  H01L23/14 ,  H01L21/48 ,  H01L23/373

CPC classification number: H01L23/49827 ,  H01L21/481 ,  H01L21/4853 ,  H01L23/13 ,  H01L23/147 ,  H01L23/15 ,  H01L23/3738 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49894 ,  H01L2224/11

Abstract: A semiconductor package is provided, including a semiconductor substrate having a plurality of conductive vias, a buffer layer formed on the semiconductor substrate, a plurality of conductive pads formed on end surfaces of the conductive vias and covering the buffer layer. During a reflow process, the buffer layer greatly reduces the thermal stress, thereby eliminating the occurance of cracking at the interface of conductive pads. A method of fabricating such a semiconductor package is also provided.

公开(公告)号：US09666536B2

公开(公告)日：2017-05-30

申请号：US14956758

申请日：2015-12-02

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Yi-Wei Liu ,  Yan-Heng Chen ,  Mao-Hua Yeh ,  Hung-Wen Liu ,  Yi-Che Lai

IPC: H01L21/4763 ,  H01L23/538 ,  H01L21/683 ,  H01L21/56 ,  H01L21/78 ,  H01L21/3105 ,  H01L23/498 ,  H01L21/48 ,  H01L25/00 ,  H01L23/00 ,  H01L25/10

CPC classification number: H01L23/5389 ,  H01L21/31053 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68372 ,  H01L2224/12105 ,  H01L2224/16235 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/15311

Abstract: The present invention provides a package structure and fabrication method thereof. The method includes providing a first carrier having a metal layer; forming a dielectric layer on the metal layer; forming a plurality of conductive pillars embedded into the dielectric layer and protruding from a surface of the dielectric layer, and disposing an electronic component on the surface of the dielectric layer; forming an encapsulating layer on the dielectric layer to encompass the plurality of conductive pillars, the dielectric layer and the electronic component; removing a portion of the encapsulating layer and the first carrier such that two ends of each of the plurality of conductive pillars are exposed from the encapsulating layer and the dielectric layer. Therefore, the present invention effectively reduces manufacturing costs and the need for an opening process while manufacturing the conductive pillars can be eliminated.

公开(公告)号：US09607939B2

公开(公告)日：2017-03-28

申请号：US14259629

申请日：2014-04-23

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Wen-Tsung Tseng ,  Yi-Che Lai ,  Shih-Kuang Chiu ,  Mao-Hua Yeh

IPC: H01L21/768 ,  H01L23/498 ,  H01L23/14 ,  H01L23/15

CPC classification number: H01L23/49827 ,  H01L21/481 ,  H01L21/4853 ,  H01L23/13 ,  H01L23/147 ,  H01L23/15 ,  H01L23/3738 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49894 ,  H01L2224/11

Abstract: A semiconductor package is provided, including a semiconductor substrate having a plurality of conductive vias, a buffer layer formed on the semiconductor substrate, a plurality of conductive pads formed on end surfaces of the conductive vias and covering the buffer layer. During a reflow process, the buffer layer greatly reduces the thermal stress, thereby eliminating the occurance of cracking at the interface of conductive pads. A method of fabricating such a semiconductor package is also provided.

公开(公告)号：US20160190099A1

公开(公告)日：2016-06-30

申请号：US14956758

申请日：2015-12-02

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Yi-Wei Liu ,  Yan-Heng Chen ,  Mao-Hua Yeh ,  Hung-Wen Liu ,  Yi-Che Lai

IPC: H01L25/065 ,  H01L21/48 ,  H01L21/56 ,  H01L23/538 ,  H01L25/00 ,  H01L21/78 ,  H01L21/3105 ,  H01L23/31 ,  H01L21/683 ,  H01L21/768

CPC classification number: H01L23/5389 ,  H01L21/31053 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68372 ,  H01L2224/12105 ,  H01L2224/16235 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/15311

Abstract: The present invention provides a package structure and fabrication method thereof. The method includes providing a first carrier having a metal layer; forming a dielectric layer on the metal layer; forming a plurality of conductive pillars embedded into the dielectric layer and protruding from a surface of the dielectric layer, and disposing an electronic component on the surface of the dielectric layer; forming an encapsulating layer on the dielectric layer to encompass the plurality of conductive pillars, the dielectric layer and the electronic component; removing a portion of the encapsulating layer and the first carrier such that two ends of each of the plurality of conductive pillars are exposed from the encapsulating layer and the dielectric layer. Therefore, the present invention effectively reduces manufacturing costs and the need for an opening process while manufacturing the conductive pillars can be eliminated.

Abstract translation: 本发明提供一种封装结构及其制造方法。 该方法包括提供具有金属层的第一载体; 在所述金属层上形成电介质层; 形成嵌入介电层并从电介质层的表面突出的多个导电柱，并在电介质层的表面上设置电子部件; 在所述电介质层上形成封装层以包围所述多个导电柱，所述电介质层和所述电子部件; 去除封装层和第一载体的一部分，使得多个导电柱中的每一个的两端从封装层和电介质层露出。 因此，本发明有效地降低了制造成本，并且可以消除在制造导电柱的过程中对打开过程的需要。

公开(公告)号：US20150035164A1

公开(公告)日：2015-02-05

申请号：US14012447

申请日：2013-08-28

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Guang-Hwa Ma ,  Shih-Kuang Chiu ,  Shih-Ching Chen ,  Chun-Chi Ke ,  Chang-Lun Lu ,  Chun-Hung Lu ,  Hsien-Wen Chen ,  Chun-Tang Lin ,  Yi-Che Lai ,  Chi-Hsin Chiu ,  Wen-Tsung Tseng ,  Tsung-Te Yuan ,  Lu-Yi Chen ,  Mao-Hua Yeh

IPC: H01L23/538 ,  H01L23/00

CPC classification number: H01L24/96 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3135 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/82 ,  H01L2221/68359 ,  H01L2221/68372 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24137 ,  H01L2224/82005 ,  H01L2224/82007 ,  H01L2924/12042 ,  H01L2924/18162 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/00

Abstract: The present invention provides a semiconductor package and a method of fabricating the same, including: placing in a groove of a carrier a semiconductor element having opposing active and non-active surfaces, and side surfaces abutting the active surface and the non-active surface; applying an adhesive material in the groove and around a periphery of the side surfaces of the semiconductor element; forming a dielectric layer on the adhesive material and the active surface of the semiconductor element; forming on the dielectric layer a circuit layer electrically connected to the semiconductor element; and removing a first portion of the carrier below the groove to keep a second portion of the carrier on a side wall of the groove intact for the second portion to function as a supporting member. The present invention does not require formation of a silicon interposer, and therefore the overall cost of a final product is much reduced.

Abstract translation: 本发明提供一种半导体封装及其制造方法，包括：将具有相对的有源和非有源表面的半导体元件和邻接有源表面和非有效表面的侧表面放置在载体的沟槽中; 在所述凹槽中并且围绕所述半导体元件的侧表面的周边施加粘合剂材料; 在所述粘合剂材料和所述半导体元件的有源表面上形成介电层; 在所述电介质层上形成电连接到所述半导体元件的电路层; 以及在所述凹槽下方移除所述载体的第一部分，以将所述载体的第二部分保持在所述凹槽的侧壁上，以使所述第二部分用作支撑构件。 本发明不需要形成硅插入件，因此最终产品的总成本大大降低。