Temperature control in a chemical mechanical polishing system
    24.
    发明授权
    Temperature control in a chemical mechanical polishing system 有权
    化学机械抛光系统中的温度控制

    公开(公告)号:US07153188B1

    公开(公告)日:2006-12-26

    申请号:US11245558

    申请日:2005-10-07

    IPC分类号: B24B49/00

    CPC分类号: B24B37/015

    摘要: The carrier head has a base and a substrate backing structure for holding a substrate against a polishing surface during polishing. The substrate backing structure is connected to the base and includes an external surface that contacts a backside of the substrate during polishing. The substrate backing structure also includes a resistive heating system to distribute heat over an area of the external surface and at least one thermally conductive membrane. The external surface is a first surface of the at least one thermally conductive membrane, and the resistive heating system is integrated within one of the at least one thermally conductive membrane.

    摘要翻译: 承载头具有底座和衬底背衬结构,用于在抛光期间将衬底保持在抛光表面上。 衬底背衬结构连接到基底并且包括在抛光期间接触衬底背面的外表面。 衬底背衬结构还包括电阻加热系统以在外表面的区域和至少一个导热膜上分配热量。 所述外表面是所述至少一个导热膜的第一表面,并且所述电阻加热系统集成在所述至少一个导热膜之一内。

    Method and apparatus for electroprocessing a substrate with edge profile control
    25.
    发明授权
    Method and apparatus for electroprocessing a substrate with edge profile control 失效
    用边缘轮廓控制对基底进行电处理的方法和装置

    公开(公告)号:US07422982B2

    公开(公告)日:2008-09-09

    申请号:US11483843

    申请日:2006-07-07

    IPC分类号: H01L21/302 H01L21/461

    摘要: A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially inward of the first electrode with a bias that is different than the bias applied to the first electrode. In one embodiment, the first electrode is coated with an inert material and in this way the same polish rate is obtained with a lower potential level applied to the first electrode.

    摘要翻译: 提供了一种用于电子处理衬底的方法和装置。 在一个实施例中,用于对衬底进行电处理的方法包括以下步骤:偏置第一电极以在电极和衬底之间建立第一电处理区,并且以不同于第一电极的偏压来偏置设置在第一电极的径向内侧的第二电极 施加到第一电极的偏压。 在一个实施例中,第一电极被涂覆有惰性材料,并且以这种方式获得相同的抛光速率,并且施加到第一电极的较低电位电平。

    Method and composition for polishing a substrate
    27.
    发明授权
    Method and composition for polishing a substrate 失效
    抛光基材的方法和组合物

    公开(公告)号:US07160432B2

    公开(公告)日:2007-01-09

    申请号:US10608404

    申请日:2003-06-26

    IPC分类号: B23H5/08

    摘要: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a method is provided for processing a substrate to remove conductive material disposed over narrow feature definitions formed in a substrate at a higher removal rate than conductive material disposed over wide feature definitions formed in a substrate by an electrochemical mechanical polishing technique. The electrochemical mechanical polishing technique may include a polishing composition comprising an acid based electrolyte system, one or more chelating agents, one or more corrosion inhibitors, one or more inorganic or organic acid salts, one or more pH adjusting agents to provide a pH between about 2 and about 10, and a solvent.

    摘要翻译: 提供了抛光组合物和从衬底表面去除导电材料的方法。 在一个方面,提供了一种处理衬底以除去布置在形成于衬底中的窄特征定义之上的导电材料的方法,该导电材料以比通过电化学机械抛光技术在衬底中形成的宽特征定义上布置的导电材料更高的去除速率。 电化学机械抛光技术可以包括抛光组合物,其包含酸性电解质体系,一种或多种螯合剂,一种或多种腐蚀抑制剂,一种或多种无机或有机酸盐,一种或多种pH调节剂,以提供约 2和约10,和溶剂。

    Method and apparatus for electrochemical-mechanical planarization
    29.
    发明授权
    Method and apparatus for electrochemical-mechanical planarization 失效
    电化学机械平面化方法和装置

    公开(公告)号:US06739951B2

    公开(公告)日:2004-05-25

    申请号:US10097496

    申请日:2002-03-14

    IPC分类号: B24B100

    摘要: A method for performing electrochemical-mechanical planarization (EMP) of a workpiece surface including a pattern of electrical conductors comprises supplying a chemical-mechanical polishing (CMP)-type apparatus having an abrasive or non-abrasive polishing pad with an oxidizer-free, electrolytically conductive, abrasive or non-abrasive fluid and applying a time-varying anodic potential to the workpiece surface for controllably dissolving the material, e.g., metal, of the electrical conductors while simultaneously applying mechanical polishing action to the surface. The method advantageously reduces or substantially eliminates undesirable dishing characteristic of conventional CMP planarization processing utilizing chemical oxidizer agent(s). Apparatus for performing EMP are also disclosed.

    摘要翻译: 一种用于执行包括电导体图案的工件表面的电化学 - 机械平面化(EMP)的方法包括:将具有磨料或非研磨性抛光垫的化学机械抛光(CMP)型设备供给无氧化剂,电解 导电的,研磨的或非研磨的流体,并且将时变的阳极电位施加到工件表面,以可控制地溶解电导体的材料,例如金属,同时对表面施加机械抛光作用。 该方法有利地减少或基本消除利用化学氧化剂的常规CMP平坦化处理的不期望的凹陷特性。 还公开了用于执行EMP的装置。

    Method and apparatus for evaluating polishing pad conditioning
    30.
    发明授权
    Method and apparatus for evaluating polishing pad conditioning 失效
    评估抛光垫调理的方法和装置

    公开(公告)号:US07699972B2

    公开(公告)日:2010-04-20

    申请号:US11370474

    申请日:2006-03-08

    IPC分类号: C25F3/02 B23H5/06

    摘要: A method and apparatus for evaluating a conditioned electrochemical mechanical polishing pad are provided. A polishing pad is conditioned using a first set of process conditions. A sheet wafer and a residue wafer are polished on the polishing pad. The removal rates of one or more materials from the sheet wafer and the residue wafer are measured. A normalized removal rate is calculated. The polishing pad is further conditioned if the normalized removal rate is not within a minimum value and a maximum value. In one embodiment, the normalized removal rate comprises a ratio of the removal rate of the residue wafer to the removal rate of the sheet wafer.

    摘要翻译: 提供了一种评价调理电化学机械抛光垫的方法和装置。 使用第一组工艺条件对抛光垫进行调理。 在抛光垫上抛光片状晶片和残留晶片。 测量来自片状晶片和残留晶片的一种或多种材料的去除速率。 计算归一化的去除率。 如果归一化的去除速率不在最小值和最大值内,抛光垫被进一步调节。 在一个实施例中,归一化去除速率包括残余晶片的去除速率与片晶片的去除速率的比率。