公开(公告)号：US07572278B2

公开(公告)日：2009-08-11

申请号：US10659297

申请日：2003-09-11

申请人： Nobumasa Suzuki ,  Yutaka Nohara ,  Shinnosuke Nakahara ,  Shigenobu Sato ,  Kazumasa Ueyama ,  Kazuhiro Hasegawa ,  Kazuya Oribe ,  Hiroshi Takamido

发明人： Nobumasa Suzuki ,  Yutaka Nohara ,  Shinnosuke Nakahara ,  Shigenobu Sato ,  Kazumasa Ueyama ,  Kazuhiro Hasegawa ,  Kazuya Oribe ,  Hiroshi Takamido

IPC分类号： A61B17/70

CPC分类号： A61B17/7035 ,  A61B17/7041 ,  A61B17/7049

摘要： A rod connector is provided with a rod supporting portion in a part of a connector main body supported to a leading end of a shank portion. A rod pressing portion is provided in a side opposing to the rod supporting portion, and a rod is clamped and fixed by the rod pressing portion and the rod supporting portion. At this time, small convex portions provided in the rod supporting portion eat into the rod.

公开(公告)号：US20080173402A1

公开(公告)日：2008-07-24

申请号：US11969544

申请日：2008-01-04

申请人： Nobumasa Suzuki ,  Yusuke Fukuchi ,  Yuu Nishimura

发明人： Nobumasa Suzuki ,  Yusuke Fukuchi ,  Yuu Nishimura

IPC分类号： C23C16/513 ,  B01J19/12 ,  H01L21/306

CPC分类号： C23C16/511 ,  H01J37/32091 ,  H01J37/32192 ,  H01J37/32541

摘要： A radiofrequency wave electrode that is electrically insulated from a microwave introduction portion is provided, or the microwave introduction portion also functions as a radiofrequency wave electrode, and a radiofrequency wave is superimposed on a microwave for generating plasma. With this feature a plasma having an enhanced intensity is generated even in a portion where otherwise the microwave plasma intensity may be low and reaction product may easily adhere to.

摘要翻译： 设置与微波导入部电绝缘的射频波电极，或者微波导入部也起到射频波电极的作用，并且在用于产生等离子体的微波上叠加射频波。 利用该特征，即使在其中微波等离子体强度可能较低并且反应产物可能容易粘附的部分中也产生具有增强强度的等离子体。

公开(公告)号：US20080149274A1

公开(公告)日：2008-06-26

申请号：US11871839

申请日：2007-10-12

申请人： Nobumasa Suzuki

发明人： Nobumasa Suzuki

IPC分类号： C23C16/00

CPC分类号： C23C16/513 ,  C23C8/36 ,  C23C16/4412

摘要： A plasma processing apparatus includes a vacuum vessel having a dielectric window; a first exhaust unit configured to evacuate the vacuum vessel; a microwave introducing portion for introducing a microwave into the vacuum vessel through the dielectric window; and a second exhaust unit configured to evacuate a closed space of the microwave introducing portion side of the dielectric window. Even when local stress is produced, the dielectric window is resistant to destruction. Even if the dielectric window is broken, the vacuum vessel is not significantly damaged.

摘要翻译： 等离子体处理装置包括具有电介质窗的真空容器; 第一排气单元，构造成抽空真空容器; 微波引入部分，用于通过介电窗口将微波引入真空容器; 以及第二排气单元，其构造成抽出介电窗口的微波导入部分侧的封闭空间。 即使产生局部应力，电介质窗也能抵抗破坏。 即使电介质窗口破裂，真空容器也不会明显损坏。

公开(公告)号：US20060129150A1

公开(公告)日：2006-06-15

申请号：US11326412

申请日：2006-01-06

申请人： Nobumasa Suzuki ,  Yutaka Nohara ,  Shinnosuke Nakahara ,  Shigenobu Sato ,  Kazumasa Ueyama ,  Kazuhiro Hasegawa ,  Kazuya Oribe ,  Hiroshi Takamido

发明人： Nobumasa Suzuki ,  Yutaka Nohara ,  Shinnosuke Nakahara ,  Shigenobu Sato ,  Kazumasa Ueyama ,  Kazuhiro Hasegawa ,  Kazuya Oribe ,  Hiroshi Takamido

IPC分类号： A61F2/30

CPC分类号： A61B17/7035 ,  A61B17/7041 ,  A61B17/7049

摘要： A rod connector is provided with a rod supporting portion in a part of a connector main body supported to a leading end of a shank portion. A rod pressing portion is provided in a side opposing to the rod supporting portion, and a rod is clamped and fixed by the rod pressing portion and the rod supporting portion. At this time, small convex portions provided in the rod supporting portion eat into the rod.

公开(公告)号：US06884318B2

公开(公告)日：2005-04-26

申请号：US10259729

申请日：2002-09-30

申请人： Nobumasa Suzuki

发明人： Nobumasa Suzuki

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/511 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/316 ,  H01L21/318 ,  H05H1/00 ,  C23C16/00

CPC分类号： H01L21/67069 ,  C23C16/511 ,  H01J37/32192 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31612 ,  H01L21/3185

摘要： A plasma processing system in which air in a plasma processing chamber is exhausted by an exhaust unit and a microwave is supplied to the plasma processing chamber through an annular waveguide which is provided at predetermined intervals in a circumferential direction on the same plane facing a surface of an object to be processed on the plasma processing chamber side to generate plasma within the plasma processing chamber. The annular waveguide is separated into two layers of an input side waveguide and an output side waveguide. The slots are provided between these waveguides at predetermined intervals in a circumferential direction.

摘要翻译： 一种等离子体处理系统，其中等离子体处理室中的空气被排气单元排出并且微波通过环形波导提供给等离子体处理室，所述环形波导在周向上以预定间隔设置在面向 在等离子体处理室侧进行处理的物体，以在等离子体处理室内产生等离子体。 环形波导被分成两层输入侧波导和输出侧波导。 槽在这些波导之间沿周向以预定的间隔设置。

公开(公告)号：US06677549B2

公开(公告)日：2004-01-13

申请号：US09906231

申请日：2001-07-17

申请人： Nobumasa Suzuki ,  Shinzo Uchiyama ,  Hideo Kitagawa

发明人： Nobumasa Suzuki ,  Shinzo Uchiyama ,  Hideo Kitagawa

IPC分类号： B23K1000

CPC分类号： H01J37/32238

摘要： To provide a production method of a structure with which a degradation of a processing speed is suppressed and plasma processing is performed with using a reliable plasma processing apparatus and which is excellent in repeatability, a plasma processing apparatus, which includes a container whose inside can be exhausted and a gas supply port for supplying a process gas to the container and subjects to plasma processing an object to be processed placed in the container, is characterized in containing a light shielding film that disturbs the incidence of light, which may increase dielectric loss of a permeable window, to this dielectric window on the internal surface of the permeable window permeating high frequency energy for generating the plasma of the above-described gas, and is provided in the above-described container.

摘要翻译： 为了提供一种使用可靠等离子体处理装置并且重复性优异的处理速度劣化被抑制并进行等离子体处理的结构的制造方法，其包括内部可以是容器的等离子体处理装置 用于将处理气体供给到容器并对被处理物体进行等离子体处理的气体供给口被放置在容器中，其特征在于包含遮光膜，其遮断光的入射，这可能增加介电损耗 渗透窗口，渗透到可渗透窗口的内表面上的电介质窗口，其渗入用于产生上述气体的等离子体的高频能量，并且设置在上述容器中。

公开(公告)号：US06652709B1

公开(公告)日：2003-11-25

申请号：US09697124

申请日：2000-10-27

申请人： Nobumasa Suzuki ,  Shigenobu Yokoshima

发明人： Nobumasa Suzuki ,  Shigenobu Yokoshima

IPC分类号： H05H100

CPC分类号： H01L21/67069 ,  H01J37/32192 ,  H01J37/32229

摘要： In order to keep the balance of microwave plasma density to suppress uneven processing in the circumferential direction of a circular waveguide, in a plasma processing apparatus comprising a plasma generation chamber, a support means for supporting an article, a gas introducing means, and an evacuation means, two introducing ports are provided in a microwave applicator for supplying microwaves through a dielectric window, and microwaves distributed with a junction circuit are guided to the introducing ports such that electric field vectors are in predetermined directions.

摘要翻译： 为了保持微波等离子体密度的平衡以抑制圆形波导的圆周方向上的不均匀加工，在包括等离子体产生室的等离子体处理装置中，用于支撑物品的支撑装置，气体引入装置和排气 意味着在微波施加器中提供两个引入端口，用于通过电介质窗口提供微波，并且分布有结电路的微波被引导到引入端口，使得电场矢量处于预定方向。

公开(公告)号：US5803975A

公开(公告)日：1998-09-08

申请号：US806070

申请日：1997-02-25

申请人： Nobumasa Suzuki

发明人： Nobumasa Suzuki

IPC分类号： C23C16/34 ,  C23C16/40 ,  C23C16/511 ,  C23C16/517 ,  H01J37/32 ,  C23C16/00

CPC分类号： H01J37/32229 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/511 ,  C23C16/517 ,  H01J37/32192

摘要： For generating uniform high-density plasma over a large area with a low power thereby achieving high-quality plasma process at a high speed even at a low temperature, there is provided a microwave plasma processing apparatus comprising a plasma generation chamber having a periphery separated from the ambient air by a dielectric member, microwave introduction means utilizing an endless annular wave guide tube provided around the plasma generation chamber and provided with plural slots, a processing chamber connected to the plasma generation chamber, support means for a substrate to be processed provided in the processing chamber, gas introduction means for the plasma generation chamber and the processing chamber, and evacuation means for the plasma generation chamber and the processing chamber, wherein the circumferential length L.sub.g of the endless annular wave guide tube, the wavelength .lambda..sub.g of the microwave in the endless annular wave guide tube, the circumferential length L.sub.s of the dielectric member and the wavelength .lambda..sub.s of the surface wave propagating in the dielectric material substantially satisfy a relationship: L.sub.s /.lambda..sub.s =(2n1)L.sub.g /.lambda..sub.g wherein n is 0 or a natural number.

摘要翻译： 为了在低功率的大面积上产生均匀的高密度等离子体，因此即使在低温也能以高速实现高质量的等离子体处理，提供了一种微波等离子体处理装置，其包括等离子体产生室，其外围与 通过电介质构成的环境空气，使用设置在等离子体生成室周围的环状的环状波导管的微波引入装置，设置有多个槽，与等离子体生成室连接的处理室，设置在被处理基板的支撑装置 处理室，等离子体产生室和处理室的气体引入装置，等离子体产生室和处理室的排气装置，其中环形环形导波管的周长Lg，微波的波长λg 在无端环形波导管中，圆周长度Ls为 电介质材料和在电介质材料中传播的表面波的波长λs基本满足关系：Ls /λs =（2n1）Lg /λg，其中n为0或自然数。

公开(公告)号：US5565247A

公开(公告)日：1996-10-15

申请号：US433193

申请日：1995-05-02

申请人： Nobumasa Suzuki

发明人： Nobumasa Suzuki

IPC分类号： C23C16/507 ,  B05D3/06

CPC分类号： C23C16/507

摘要： A process for forming a functional deposited film by way of RF plasma CVD process, comprising generating plasma in a substantially enclosed plasma generation chamber provided with an electrode arranged at the periphery of said plasma generation chamber by applying a RF power through said electrode into said plasma generation chamber, and forming said functional deposited film on a substrate placed in a deposition chamber communicated with said plasma generation chamber, wherein said substrate is arranged so as to isolate from a zone where said plasma is generated, characterized by comprising causing a magnetic field in said plasma generation chamber by means of a magnetic field generation means such that a magnetic flux density with a maximum intensity in the range of from 500 to 1000 Gauss is provided on the inner wall face side of and in parallel to the inner wall face of said plasma generation chamber; supplying a plasma generating raw material gas to a zone where said magnetic field resides; applying a RF power through said electrode to said zone to excite and decompose said plasma generating raw material gas thereby forming a high density plasma region localized in a doughnut-like shaped state while producing active species; introducing a film-forming raw material gas reactive with said active species into said deposition chamber to chemically react said film-forming raw material gas with said active species, wherein a ratio of Nee/Nes which is expressed by a ratio between an electron density Nes in the vicinity of said substrate and an electron density Nee in the vicinity of said electrode is adjusted to be 100 or more, and the relationship between a distance D between said electrode and said substrate and an inner pressure P in said deposition chamber is adjusted to satisfy the equation 0.5.ltoreq.P.times.D.ltoreq.5, whereby the formation of a functional deposited film is caused on said substrate.

摘要翻译： 一种用于通过RF等离子体CVD工艺形成功能性沉积膜的方法，包括在基本上封闭的等离子体生成室中产生等离子体，所述等离子体生成室通过将RF电力通过所述电极施加到所述等离子体中而设置在所述等离子体发生室的外围， 并且在放置在与所述等离子体生成室连通的沉积室中的衬底上形成所述功能沉积膜，其中所述衬底布置成与产生所述等离子体的区域隔离，其特征在于， 所述等离子体产生室借助于磁场产生装置，使得具有在500至1000高斯范围内的最大强度的磁通密度设置在所述内壁面的内壁面侧并平行于所述内壁面 等离子体发生室; 将等离子体产生的原料气体供应到所述磁场所在的区域; 将RF功率通过所述电极施加到所述区域以激发和分解所述等离子体产生原料气体，从而形成定位在环状状态的高密度等离子体区域，同时产生活性物质; 将与所述活性物质反应的成膜原料气体引入所述沉积室以使所述成膜原料气体与所述活性物质进行化学反应，其中Nee / Nes的比例由电子密度Nes 在所述基板的附近，将所述电极附近的电子密度Nee调整为100以上，将所述电极与所述基板的距离D与所述沉积室内的内压P之间的关系调整为 满足方程式0.5

公开(公告)号：US5487875A

公开(公告)日：1996-01-30

申请号：US84211

申请日：1993-07-06

申请人： Nobumasa Suzuki

发明人： Nobumasa Suzuki

IPC分类号： H01J37/32 ,  H05H1/46

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  Y10S422/906

摘要： A microwave introducing device has an endless circular waveguide provided with a plurality of slots. The circular waveguide is provided with a microwave introducing portion connected to a microwave power source, and the plurality of slots are spaced through an inner side of the circular waveguide such that the slots are arranged at the inner side of the circular waveguide at a given interval. A plasma treating apparatus can be provided with the microwave introducing device.

摘要翻译： PCT No.PCT / JP92 / 01430 Sec。 371日期：1993年7月6日 102（e）日期1993年7月6日PCT PCT日期为1992年11月5日。微波引入装置具有设置有多个槽的环形圆形波导。 圆形波导设置有连接到微波功率源的微波引入部分，并且多个狭槽通过圆形波导的内侧间隔开，使得狭槽以给定的间隔布置在圆形波导的内侧 。 等离子体处理装置可以设置有微波导入装置。