公开(公告)号：US07514746B2

公开(公告)日：2009-04-07

申请号：US11429490

申请日：2006-05-04

申请人： Stephen H. Tang ,  Ali Keshavarzi ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad M. Khellah ,  Yibin Ye ,  Shih-Lien L. Lu ,  Brian Doyle ,  Suman Datta ,  Vivek K. De

发明人： Stephen H. Tang ,  Ali Keshavarzi ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad M. Khellah ,  Yibin Ye ,  Shih-Lien L. Lu ,  Brian Doyle ,  Suman Datta ,  Vivek K. De

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC分类号： H01L29/785 ,  H01L27/108 ,  H01L27/10802 ,  H01L27/10826 ,  H01L27/10876 ,  H01L27/10879 ,  H01L29/66795 ,  H01L29/7841

摘要： A floating-body dynamic random access memory device may include a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer may be formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode may be formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body. The gate electrode may only partially deplete a region of the semiconductor body, and the partially depleted region may be used as a storage node for logic states.

摘要翻译： 浮体动态随机存取存储器件可以包括半导体本体，其具有形成在衬底上的顶表面和横向相对的侧壁。 可以在半导体主体的顶表面和半导体本体的横向相对的侧壁上形成栅介质层。 栅极电极可以形成在半导体本体的顶表面上的栅极电介质上并与半导体本体的横向相对的侧壁上的栅电介质相邻。 栅电极可能仅部分地耗尽半导体本体的区域，并且部分耗尽的区域可以用作逻辑状态的存储节点。

公开(公告)号：US07501316B2

公开(公告)日：2009-03-10

申请号：US11268098

申请日：2005-11-07

申请人： Ali Keshavarzi ,  Stephen H. Tang ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad M. Khellah ,  Yibin Ye ,  Shih-Lien L. Lu ,  Vivek K. De

发明人： Ali Keshavarzi ,  Stephen H. Tang ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad M. Khellah ,  Yibin Ye ,  Shih-Lien L. Lu ,  Vivek K. De

IPC分类号： H01L21/82

CPC分类号： G11C11/404 ,  G11C2211/4016 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/108 ,  H01L29/7841

摘要： Some embodiments provide a memory cell that includes a body region, a source region and a drain region. The body region is doped with charge carriers of a first type, the source region is disposed in the body region and doped with charge carriers of a second type, and the drain region is disposed in the body region and doped with charge carriers of the second type. The body region and the source region form a first junction, the body region and the drain region form a second junction, and a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased.

摘要翻译： 一些实施例提供了包括体区，源区和漏区的存储单元。 主体区域掺杂有第一类型的电荷载流子，源极区域设置在体区中并掺杂有第二类型的电荷载流子，并且漏极区域设置在体区中并掺杂有第二类型的载流子 类型。 主体区域和源极区域形成第一结，主体区域和漏极区域形成第二结，并且在第一接合点不偏向的情况下，从体区域到源极区域的第一结的导电率基本上 在第二接头不偏差的情况下，小于从体区到漏区的第二结的导电性。

公开(公告)号：US07262107B2

公开(公告)日：2007-08-28

申请号：US11170504

申请日：2005-06-29

申请人： Stephen H. Tang ,  Ali Keshavarzi ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad M. Khellah ,  Yibin Ye ,  Shih-Lien L. Lu ,  Vivek K. De

发明人： Stephen H. Tang ,  Ali Keshavarzi ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad M. Khellah ,  Yibin Ye ,  Shih-Lien L. Lu ,  Vivek K. De

IPC分类号： H01L21/331

CPC分类号： H01L27/108 ,  H01L27/1085 ,  H01L28/40

摘要： A manufacturing process modification is disclosed for producing a metal-insulator-metal (MIM) capacitor. The MIM capacitor may be used in memory cells, such as DRAMs, and may also be integrated into logic processing, such as for microprocessors. The processing used to generate the MIM capacitor is adaptable to current logic processing techniques. Other embodiments are described and claimed.

公开(公告)号：US07075821B2

公开(公告)日：2006-07-11

申请号：US10956407

申请日：2004-09-30

申请人： Yibin Ye ,  Stephen H. Tang ,  Ali Keshavarzi ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad M. Khellah ,  Gerhard Schrom ,  Vivek K. De

发明人： Yibin Ye ,  Stephen H. Tang ,  Ali Keshavarzi ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad M. Khellah ,  Gerhard Schrom ,  Vivek K. De

IPC分类号： G11C7/00

CPC分类号： G11C11/404 ,  G11C2211/4016

摘要： A method and apparatus for a one-phase write to a one-transistor memory cell array. In one embodiment, the method includes a one-phase write to a selected wordline of a memory cell array. Once the wordline is selected, a logical zero value is stored within at least one memory cell of the selected wordline of the memory cell array. Simultaneously, a logical 0 value is stored within at least one memory cell of the selected wordline of the selected memory cell array. Other embodiments are described and claimed.

公开(公告)号：US07295474B2

公开(公告)日：2007-11-13

申请号：US11172742

申请日：2005-06-30

申请人： Yibin Ye ,  Muhammad M. Khellah ,  Dinesh Somasekhar ,  Ali Keshavarzi ,  Fabrice Paillet ,  Vivek K. De

发明人： Yibin Ye ,  Muhammad M. Khellah ,  Dinesh Somasekhar ,  Ali Keshavarzi ,  Fabrice Paillet ,  Vivek K. De

IPC分类号： G11C11/34

CPC分类号： G11C11/405 ,  G11C7/062 ,  G11C7/067 ,  G11C7/12 ,  G11C11/4085 ,  G11C11/4091 ,  G11C11/4094

摘要： A cell in an information storage cell array is written, by asserting a signal on a bit line that is coupled to the cell and to a group of other cells in the array, to a first voltage. The cell is read by asserting a signal on a word line that is coupled to the cell and to another group of cells in the array, in a direction of, but without reaching, the first voltage. Other embodiments are also described and claimed.

摘要翻译： 写入信息存储单元阵列中的单元，通过将耦合到单元的位线和阵列中的一组其他单元的信号置为第一电压。 通过在与第一电压的方向但不达到第一电压的方向上断言在字线上耦合到单元和阵列中的另一组单元的信号来读取单元。 还描述和要求保护其他实施例。

公开(公告)号：US07236410B2

公开(公告)日：2007-06-26

申请号：US11169106

申请日：2005-06-27

申请人： Gerhard Schrom ,  Fabrice Paillet ,  Tanay Karnik ,  Dinesh Somasekhar ,  Yibin Ye ,  Ali Keshavarzi ,  Muhammad M. Khellah ,  Vivek K. De

发明人： Gerhard Schrom ,  Fabrice Paillet ,  Tanay Karnik ,  Dinesh Somasekhar ,  Yibin Ye ,  Ali Keshavarzi ,  Muhammad M. Khellah ,  Vivek K. De

IPC分类号： G11C7/00 ,  G11C17/00 ,  G11C5/06

CPC分类号： G11C17/18

摘要： A system includes a pull-up circuit to program a memory cell. The pull-up circuit may include a level shifter to receive a control signal, a supply voltage, and one or more of a plurality of rail voltages, each of the plurality of rail voltages substantially equal to a respective integer multiple of the supply voltage, and to generate a second control signal, and a cascode stage. The cascode stage may include a plurality of transistors, a gate voltage of each of the plurality of transistors to be controlled at least in part by a respective one of the second control signal, the supply voltage, and at least one of the plurality of rail voltages, and an output node to provide a cell programming signal.

摘要翻译： 系统包括用于对存储器单元进行编程的上拉电路。 上拉电路可以包括电平移位器以接收控制信号，电源电压以及多个轨道电压中的一个或多个，多个轨道电压中的每一个基本上等于电源电压的相应整数倍， 并产生第二控制信号和共源共栅级。 共源共栅级可以包括多个晶体管，多个晶体管中的每一个的栅极电压至少部分地由第二控制信号，电源电压和多个轨道中的至少一个轨道 电压和输出节点以提供单元编程信号。

公开(公告)号：US20060054977A1

公开(公告)日：2006-03-16

申请号：US10942019

申请日：2004-09-16

申请人： Dinesh Somasekhar ,  Shekhar Borkar ,  Vivek De ,  Yibin Ye ,  Muhammad Khellah ,  Fabrice Paillet ,  Stephen Tang ,  Ali Keshavarzi ,  Shih-Lien Lu

发明人： Dinesh Somasekhar ,  Shekhar Borkar ,  Vivek De ,  Yibin Ye ,  Muhammad Khellah ,  Fabrice Paillet ,  Stephen Tang ,  Ali Keshavarzi ,  Shih-Lien Lu

IPC分类号： H01L29/76

CPC分类号： H01L27/115 ,  G11C11/404 ,  G11C16/0416

摘要： A memory device is provided that includes a plurality of memory cells where each memory cell includes a source region, a drain region and a floating gate. A coupling bit-line is also provided that extends over at least one column of the plurality of memory cells. The coupling bit-line may be formed on each of the floating gates of memory cells forming the column of the plurality of memory cells. The coupling bit-line may also be formed within a well of each of memory cells forming the column of the plurality of memory cells.

摘要翻译： 提供一种存储器件，其包括多个存储器单元，其中每个存储器单元包括源极区域，漏极区域和浮动栅极。 还提供了在多个存储单元中的至少一列延伸的耦合位线。 耦合位线可以形成在形成多个存储单元的列的存储单元的每个浮置栅极上。 耦合位线也可以形成在形成多个存储器单元的列的每个存储单元的阱中。

公开(公告)号：US20050145886A1

公开(公告)日：2005-07-07

申请号：US10750572

申请日：2003-12-31

申请人： Ali Keshavarzi ,  Stephen Tang ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad Khellah ,  Yibin Ye ,  Shih-Lien Lu ,  Vivek De

发明人： Ali Keshavarzi ,  Stephen Tang ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad Khellah ,  Yibin Ye ,  Shih-Lien Lu ,  Vivek De

IPC分类号： G11C11/404 ,  H01L21/8239 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/78

CPC分类号： G11C11/404 ,  G11C2211/4016 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/108 ,  H01L29/7841

摘要： Some embodiments provide a memory cell that includes a body region, a source region and a drain region. The body region is doped with charge carriers of a first type, the source region is disposed in the body region and doped with charge carriers of a second type, and the drain region is disposed in the body region and doped with charge carriers of the second type. The body region and the source region form a first junction, the body region and the drain region form a second junction, and a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased.

摘要翻译： 一些实施例提供了包括体区，源区和漏区的存储单元。 主体区域掺杂有第一类型的电荷载流子，源极区域设置在体区中并掺杂有第二类型的电荷载流子，并且漏极区域设置在体区中并掺杂有第二类型的载流子 类型。 主体区域和源极区域形成第一结，主体区域和漏极区域形成第二结，并且在第一接合点不偏向的情况下，从体区域到源极区域的第一结的导电率基本上 在第二接头不偏差的情况下，小于从体区到漏区的第二结的导电性。

公开(公告)号：US20050135169A1

公开(公告)日：2005-06-23

申请号：US10740551

申请日：2003-12-22

申请人： Dinesh Somasekhar ,  Yibin Ye ,  Muhammad Khellah ,  Fabrice Paillet ,  Stephen Tang ,  Ali Keshavarzi ,  Shih-Lien Lu ,  Vivek De

发明人： Dinesh Somasekhar ,  Yibin Ye ,  Muhammad Khellah ,  Fabrice Paillet ,  Stephen Tang ,  Ali Keshavarzi ,  Shih-Lien Lu ,  Vivek De

IPC分类号： G11C7/14 ,  G11C7/18 ,  G11C11/4097 ,  G11C11/4099 ,  G11C7/02

CPC分类号： G11C11/4099 ,  G11C7/14 ,  G11C7/18 ,  G11C11/4097

摘要： An apparatus and method for generating a reference in a memory circuit are disclosed. At least two dummy bit-cells are used to generate a reference voltage. One cell has high value stored and the other has a low value stored. The cells are activated and discharged into respective bit-lines. The bit-lines are equalized during the discharge process to generate a reference that is approximately a mid point between a high value cell and a low value cell.

摘要翻译： 公开了一种用于在存储器电路中产生参考的装置和方法。 使用至少两个伪位单元来产生参考电压。 一个单元格具有高存储值，另一个存储值较低。 电池被激活并放电到相应的位线。 在放电过程期间，位线被均衡以产生大约高值单元和低值单元之间的中点的参考。

公开(公告)号：US20060054933A1

公开(公告)日：2006-03-16

申请号：US11268098

申请日：2005-11-07

申请人： Ali Keshavarzi ,  Stephen Tang ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad Khellah ,  Yibin Ye ,  Shih-Lien Lu ,  Vivek De

发明人： Ali Keshavarzi ,  Stephen Tang ,  Dinesh Somasekhar ,  Fabrice Paillet ,  Muhammad Khellah ,  Yibin Ye ,  Shih-Lien Lu ,  Vivek De

IPC分类号： H01L27/10

CPC分类号： G11C11/404 ,  G11C2211/4016 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/108 ,  H01L29/7841

摘要： Some embodiments provide a memory cell that includes a body region, a source region and a drain region. The body region is doped with charge carriers of a first type, the source region is disposed in the body region and doped with charge carriers of a second type, and the drain region is disposed in the body region and doped with charge carriers of the second type. The body region and the source region form a first junction, the body region and the drain region form a second junction, and a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased.