摘要:
An integrated substrate cleaning processes capable of removing residues and particulates from the surface of a photomask is described. In one embodiment, an ozonated de-ionized water treatment is the first wet cleaning operation. In an embodiment of the present invention, the substrate cleaning process includes a wet cleaning operation employing an ammonium hydroxide-based chemical cleaning solution diluted with hydrogenated de-ionized water. In another embodiment of the present invention, the substrate cleaning process uses a plasma treatment prior to the first wet cleaning operation.
摘要:
Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water below the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.
摘要:
A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.
摘要:
Embodiments of the invention generally provide core-sheath nanostructures and methods for forming such nanostructures. In one embodiment, a method for forming core-sheath nanostructures includes stirring an aqueous dispersion containing silver nanostructures while adding a catalytic metal salt solution to the aqueous dispersion and forming catalytic metal coated silver nanostructures during a galvanic replacement process. The method further includes stirring an organic solvent dispersion containing the catalytic metal coated silver nanostructures dispersed in an organic solvent while adding a nickel salt solution to the organic solvent dispersion, and thereafter, adding a reducing solution to the organic solvent dispersion to form silver-nickel core-sheath nanostructures during a nickel coating process. In one embodiment, the core-sheath nanostructures are silver-nickel core-sheath nanowires, wherein each silver-nickel core-sheath nanowire has a sheath layer of nickel disposed over and encompassing a catalytic metal layer of palladium disposed on a nanowire core of silver.
摘要:
According to one aspect of the present invention, a method and apparatus for cleaning a semiconductor substrate are provided. The apparatus may include a chamber wall defining a processing chamber having a chamber gas therein, a semiconductor substrate support, and a fluid nozzle within the processing chamber having first and second pieces. The first piece may have a tip with a tip opening, and the second piece may have inlet and outlet openings and a fluid passageway therethrough interconnecting the inlet and outlet openings. A space may be defined in the fluid nozzle such that when a semiconductor substrate processing fluid is directed into the fluid passageway a relative low pressure region being formed within the fluid passageway to draw the chamber gas into the fluid passageway through the space between in the fluid nozzle, mix with semiconductor substrate processing fluid, and flow onto the semiconductor substrate.
摘要:
A method and apparatus for matching impedance magnitude and impedance phase for an acoustic- wave transducer load and an RF power source. The acoustic-wave transducer load has a load impedance magnitude and phase. The RF power source has a source impedance magnitude and phase. In one embodiment of the invention, a transformer matches the source and load impedance magnitudes. A capacitor, connected in series with the transformer, matches the source impedance phase to the load impedance phase.
摘要:
A method and apparatus for planarizing magnetically susceptible layers of substrates is provided. A patterned resist is formed on the magnetically susceptible layer, and the substrate is subjected to a plasma immersion ion implantation process to change a magnetic property of the magnetically susceptible layer according to the pattern of the resist material. The substrate is subjected to a plasma material removal process either before or after the implantation process to planarize the surface of the magnetically susceptible layer resulting from the implantation process. The plasma material removal process may be directional or non-directional.
摘要:
A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.
摘要:
A method and apparatus for planarizing magnetically susceptible layers of substrates is provided. A patterned resist is formed on the magnetically susceptible layer, and the substrate is subjected to a plasma immersion ion implantation process to change a magnetic property of the magnetically susceptible layer according to the pattern of the resist material. The substrate is subjected to a plasma material removal process either before or after the implantation process to planarize the surface of the magnetically susceptible layer resulting from the implantation process. The plasma material removal process may be directional or non-directional.
摘要:
Embodiments disclosed herein generally relate to a process of texturing a transparent conductive oxide layer deposited over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. After the transparent conductive oxide layer is deposited, the layer is textured to increase the haze of the layer. An increase in haze permits the layer to increase light trapping and thus improve the efficiency of a solar cell. A wet etch chemistry that utilizes a component that is less polar than water permits the acidic component, such as nitric acid, to dissociate less and thus etch the transparent conductive oxide to the desired texture. A suitable component is an organic component such as acetic acid which has a dielectric constant substantially below the dielectric constant of water.