公开(公告)号：US20050170601A1

公开(公告)日：2005-08-04

申请号：US11059449

申请日：2005-02-17

Applicant: Kyoung-Ryul Yoon ,  Han-Mei Choi ,  Seung-Hwan Lee ,  Dae-Sik Choi ,  Ki-Yeon Park ,  Young-Sun Kim ,  Sung-Tae Kim ,  Cha-Young You

Inventor： Kyoung-Ryul Yoon ,  Han-Mei Choi ,  Seung-Hwan Lee ,  Dae-Sik Choi ,  Ki-Yeon Park ,  Young-Sun Kim ,  Sung-Tae Kim ,  Cha-Young You

IPC: H01L21/20 ,  H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC classification number: H01L28/40 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228 ,  H01L27/1085 ,  H01L28/65 ,  H01L28/90

Abstract: A capacitor including a dielectric structure, a lower electrode may be formed on a substrate. The dielectric structure may be formed on the lower electrode, and may include a first thin film, which may improve a morphology of the dielectric structure, and a second thin film, which may have at least one of an EOT larger than that of the first thin film and a dielectric constant higher than that of the first thin film. An upper electrode may be formed on the dielectric structure, and the dielectric structure may have an improved morphology and/or a higher dielectric constant.

Abstract translation: 可以在基板上形成包括电介质结构的电容器，下部电极。 电介质结构可以形成在下电极上，并且可以包括可以改善电介质结构的形态的第一薄膜和可以具有大于第一薄膜的EOT中的至少一个的第二薄膜 薄膜和比第一薄膜高的介电常数。 可以在电介质结构上形成上电极，并且电介质结构可以具有改进的形态和/或更高的介电常数。

公开(公告)号：US20050009369A1

公开(公告)日：2005-01-13

申请号：US10884507

申请日：2004-07-02

Applicant: Gab-Jin Nam ,  Jong-Wan Kwon ,  Han-Mei Choi ,  Jae-Soon Lim ,  Seung-Hwan Lee ,  Ki-Chul Kim ,  Sung-Tae Kim ,  Young-Sun Kim

Inventor： Gab-Jin Nam ,  Jong-Wan Kwon ,  Han-Mei Choi ,  Jae-Soon Lim ,  Seung-Hwan Lee ,  Ki-Chul Kim ,  Sung-Tae Kim ,  Young-Sun Kim

IPC: H01L27/108 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/31 ,  H01L21/469 ,  H01L21/8242 ,  H01L21/20

CPC classification number: H01L21/0228 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45529 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31645 ,  H01L28/40 ,  H01L28/90

Abstract: Multi-layered structures formed using atomic-layer deposition processes include multiple metal oxide layers wherein the metal oxide layers are formed without the presence of interlayer oxide layers and may include different metal oxide compositions.

Abstract translation: 使用原子层沉积工艺形成的多层结构包括多个金属氧化物层，其中形成金属氧化物层而不存在层间氧化物层，并且可以包括不同的金属氧化物组合物。

公开(公告)号：US20050000426A1

公开(公告)日：2005-01-06

申请号：US10747803

申请日：2003-12-29

Applicant: Ki-Vin Im ,  In-Sung Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  Jae-Hyun Yeo ,  Yun-Jung Lee ,  Ki-Yeon Park

Inventor： Ki-Vin Im ,  In-Sung Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  Jae-Hyun Yeo ,  Yun-Jung Lee ,  Ki-Yeon Park

IPC: H01L21/02 ,  C23C16/00 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455

CPC classification number: C23C16/45544 ,  C23C16/40 ,  C23C16/4481

Abstract: An apparatus for depositing a thin film includes a reaction chamber, a reaction gas provider to supply a reaction gas and/or inert gas to the reaction chamber, an oxidant provider to supply a first oxidant and a second oxidant to the reaction chamber, and an air drain to exhaust gas from the apparatus. The oxidant provider is operable to supply the second oxidant to the reaction chamber using the first oxidant as a transfer gas.

Abstract translation: 用于沉积薄膜的装置包括反应室，向反应室供应反应气体和/或惰性气体的反应气体提供者，向反应室供应第一氧化剂和第二氧化剂的氧化剂供体，以及 从设备排出废气。 氧化剂供应商可操作以使用第一氧化剂作为转移气体将第二氧化剂供应到反应室。

公开(公告)号：US06333227B1

公开(公告)日：2001-12-25

申请号：US09378682

申请日：1999-08-20

Applicant: Sung-Tae Kim ,  Kyung-Hoon Kim

Inventor： Sung-Tae Kim ,  Kyung-Hoon Kim

IPC: H01L218242

CPC classification number: H01L28/84 ,  Y10S438/964

Abstract: The crystallinity of non-monocrystalline silicon necks that connect monocrystalline silicon hemispherical grains to an underlying electrode on an integrated circuit substrate is increased. Preferably, the non-monocrystalline silicon necks are crystallized. By crystallizing the non-monocrystalline silicon necks, the necks may be made more resistant to breaking and detaching during subsequent cleaning processes. The non-monocrystalline silicon necks preferably are crystallized by thermal annealing after fabrication of the hemispherical grain silicon.

Abstract translation: 将单晶硅半球形晶粒连接到集成电路基板上的底层电极的非单晶硅The The的结晶度增加。 优选地，非单晶硅are结晶。 通过使非单晶硅By结晶，可以使颈部在随后的清洗过程中更耐破裂和分离。 非单晶硅颈部优选在制造半球形晶粒硅之后通过热退火而结晶。

公开(公告)号：US07821204B2

公开(公告)日：2010-10-26

申请号：US11939325

申请日：2007-11-13

Applicant: Sung-Tae Kim

Inventor： Sung-Tae Kim

IPC: H01J17/49 ,  H01L31/0312 ,  C25B9/00

CPC classification number: H05K3/361 ,  H01J11/10 ,  H01J11/46 ,  H05K1/117 ,  H05K3/323 ,  H05K2201/09427 ,  H05K2201/098

Abstract: A plasma display apparatus comprising a connector is provided. The plasma display apparatus comprises a plasma display panel comprising an electrode of a predetermined width and a connector comprising an electrode line of a width narrower than the predetermined width of the electrode to supply a driving signal to the electrode. A distance between the electrode line and an adjacent electrode line is longer than a distance between the electrode and an adjacent electrode.

Abstract translation: 提供了包括连接器的等离子体显示装置。 等离子体显示装置包括等离子体显示面板，其包括预定宽度的电极和包括宽度比电极的预定宽度窄的电极线的连接器，以向电极提供驱动信号。 电极线和相邻电极线之间的距离比电极和相邻电极之间的距离长。

公开(公告)号：US07674685B2

公开(公告)日：2010-03-09

申请号：US11654588

申请日：2007-01-18

Applicant: Jong-Wan Choi ,  Ju-Seon Goo ,  Hong-Gun Kim ,  Yong-Soon Choi ,  Sung-Tae Kim ,  Eun-Kyung Baek

Inventor： Jong-Wan Choi ,  Ju-Seon Goo ,  Hong-Gun Kim ,  Yong-Soon Choi ,  Sung-Tae Kim ,  Eun-Kyung Baek

IPC: H01L21/76

CPC classification number: H01L21/76229 ,  H01L27/105 ,  H01L27/11531

Abstract: Disclosed are methods for fabricating semiconductor devices incorporating a composite trench isolation structure comprising a first oxide pattern, a SOG pattern and a second oxide pattern wherein the oxide patterns enclose the SOG pattern. The methods include the deposition of a first oxide layer and a SOG layer to fill recessed trench regions formed in the substrate. The first oxide layer and the SOG layer are then subjected to a planarization sequence including a CMP process followed by an etchback process to form a composite structure having a substantially flat upper surface that exposes both the oxide and the SOG material. The second oxide layer is then applied and subjected to a similar CMP/etchback sequence to obtain a composite structure having an upper surface that is recessed relative to a plane defined by the surfaces of adjacent active regions.

Abstract translation: 公开了用于制造半导体器件的方法，该半导体器件结合有包括第一氧化物图案，SOG图案和第二氧化物图案的复合沟槽隔离结构，其中氧化物图案包围SOG图案。 所述方法包括沉积第一氧化物层和SOG层以填充形成在衬底中的凹陷沟槽区域。 然后对第一氧化物层和SOG层进行包括CMP工艺的随后的回蚀工艺的平坦化顺序，以形成具有露出氧化物和SOG材料的基本上平坦的上表面的复合结构。 然后施加第二氧化物层并进行类似的CMP /回蚀序列以获得具有相对于由相邻有源区的表面限定的平面凹进的上表面的复合结构。

公开(公告)号：US07433002B2

公开(公告)日：2008-10-07

申请号：US10587560

申请日：2005-03-25

Applicant: Sung-Tae Kim ,  Ki-Cheol Yoon ,  Keon-Il Kim ,  Jae-Chul Jung

Inventor： Sung-Tae Kim ,  Ki-Cheol Yoon ,  Keon-Il Kim ,  Jae-Chul Jung

IPC: G02F1/1335

CPC classification number: G02F1/133533 ,  G02B5/045 ,  G02B5/3016 ,  G02F1/133536 ,  G02F2201/343

Abstract: The present invention is related to a method of method of manufacture of a reflective polarizing film that can improve brightness of a liquid crystal display device remarkably by making a liquid crystal film that can cover visible light by using cholesteric liquid crystal layers having different selective light-reflection central wavelengths, attaching a quarter wave (¼ λ) retardation film on top of the liquid crystal film, and adding prism patterns to the opposite side of the liquid crystal film. The reflective polarizing film of the present invention is characterized by that two or more cholesteric liquid crystal layers having different selective reflection wavelength regions are laminated in order from a shorter wavelength to a longer wavelength, and brightness of a liquid crystal display device is maximized owing to an integrated film manufactured by attaching a ¼ λ retardation film onto cholesteric liquid crystal layers and forming prism patterns onto the opposite side.

Abstract translation: 本发明涉及一种反射型偏振片的制造方法，其特征在于，通过使用具有不同选择性发光的胆甾醇型液晶层，制造可以覆盖可见光的液晶膜，能够显着提高液晶显示装置的亮度， 反射中心波长，在液晶膜的顶部附加四分之一波（1/4）延迟膜，并将棱镜图案添加到液晶膜的相对侧。 本发明的反射偏光膜的特征在于，具有不同选择反射波长区域的两个以上的胆甾型液晶层从短波长到较长波长的顺序层叠，并且液晶显示装置的亮度由于 通过将1/4英寸延迟膜附着到胆甾醇型液晶层上并将棱镜图案形成在相对侧上而制成的集成膜。

公开(公告)号：US07425493B2

公开(公告)日：2008-09-16

申请号：US11059449

申请日：2005-02-17

Applicant: Kyoung-Ryul Yoon ,  Han-Mei Choi ,  Seung-Hwan Lee ,  Dae-Sik Choi ,  Ki-Yeon Park ,  Young-Sun Kim ,  Sung-Tae Kim ,  Cha-Young You

Inventor： Kyoung-Ryul Yoon ,  Han-Mei Choi ,  Seung-Hwan Lee ,  Dae-Sik Choi ,  Ki-Yeon Park ,  Young-Sun Kim ,  Sung-Tae Kim ,  Cha-Young You

IPC: H01L21/20 ,  H01L21/31

CPC classification number: H01L28/40 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228 ,  H01L27/1085 ,  H01L28/65 ,  H01L28/90

Abstract: A capacitor including a dielectric structure, a lower electrode may be formed on a substrate. The dielectric structure may be formed on the lower electrode, and may include a first thin film, which may improve a morphology of the dielectric structure, and a second thin film, which may have at least one of an EOT larger than that of the first thin film and a dielectric constant higher than that of the first thin film. An upper electrode may be formed on the dielectric structure, and the dielectric structure may have an improved morphology and/or a higher dielectric constant.

Abstract translation: 可以在基板上形成包括电介质结构的电容器，下部电极。 电介质结构可以形成在下电极上，并且可以包括可以改善电介质结构的形态的第一薄膜和可以具有大于第一薄膜的EOT中的至少一个的第二薄膜 薄膜和比第一薄膜高的介电常数。 可以在电介质结构上形成上电极，并且电介质结构可以具有改进的形态和/或更高的介电常数。

公开(公告)号：US07402491B2

公开(公告)日：2008-07-22

申请号：US11261737

申请日：2005-10-28

Applicant: Han-Mei Choi ,  Kyoung-Ryul Yoon ,  Seung-Hwan Lee ,  Ki-Yeon Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo

Inventor： Han-Mei Choi ,  Kyoung-Ryul Yoon ,  Seung-Hwan Lee ,  Ki-Yeon Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo

IPC: H01L21/336

CPC classification number: H01L21/0228 ,  H01L21/02189 ,  H01L21/28273 ,  H01L21/3141 ,  H01L21/31641 ,  H01L27/11521

Abstract: A method of manufacturing a semiconductor device can include forming a tunnel oxide layer on a substrate, forming a floating gate on the tunnel oxide layer and forming a dielectric layer pattern on the floating gate using an ALD process. The dielectric layer pattern can include a metal precursor that includes zirconium and an oxidant. A control gate can be formed on the dielectric layer pattern. The semiconductor device can include the dielectric layer pattern provided herein.

Abstract translation: 制造半导体器件的方法可以包括在衬底上形成隧道氧化物层，在隧道氧化物层上形成浮栅，并使用ALD工艺在浮栅上形成电介质层图案。 介电层图案可以包括包含锆和氧化剂的金属前体。 可以在电介质层图案上形成控制栅极。 半导体器件可以包括本文提供的电介质层图案。

公开(公告)号：US07359630B2

公开(公告)日：2008-04-15

申请号：US11514261

申请日：2006-09-01

Applicant: Kyung-Soo Yi ,  Sung-Jae Jung ,  Yoon-Heung Tak ,  Sung-Tae Kim ,  Gol-Hee Lee

Inventor： Kyung-Soo Yi ,  Sung-Jae Jung ,  Yoon-Heung Tak ,  Sung-Tae Kim ,  Gol-Hee Lee

IPC: C23C14/24

CPC classification number: C23C14/12 ,  C23C14/243

Abstract: The present invention relates to an evaporation source for evaporating an organic electroluminescent layer. In particular, the present invention relates to the evaporation source preventing an aperture, through which a vaporized evaporation material is emitted, from being clogged by restricting heat transfer to outward. The evaporation source according to the present invention includes a cell retaining an evaporation material therein; a cell cap installed on the upper part of the cell and having a cell cap aperture for emitting a vaporized evaporation material; an external wall placed in the outside of the cell to support a heating means set up at the outside of the cell; a cover placed above the cell cap, fixed to the upper end of the external wall, and having a cover aperture corresponding to the cell cap aperture; and a shut-off plate placed between the cover and the cell cap and having a shut-off plate aperture corresponding to the cell cap aperture and the cover aperture in the center of the shut-off plate.

Abstract translation: 本发明涉及蒸发有机电致发光层的蒸发源。 特别地，本发明涉及防止通过限制向外传热的方式堵塞蒸发蒸发材料的孔的蒸发源。 根据本发明的蒸发源包括在其中保留蒸发材料的电池; 电池盖安装在电池的上部并具有用于发射汽化蒸发材料的电池盖孔; 设置在电池外部的外壁，以支撑设置在电池外部的加热装置; 固定在外壁的上端，并具有对应于电池盖孔的盖孔的盖子上的盖子; 以及置于盖和电池盖之间并具有对应于电池盖开口的关闭板孔和关闭板中心的盖孔的截止板。