WAFER LEVEL PROCESSING FOR MICROELECTRONIC DEVICE PACKAGE WITH CAVITY

    公开(公告)号:US20230092132A1

    公开(公告)日:2023-03-23

    申请号:US17950027

    申请日:2022-09-21

    Abstract: A described example includes: a MEMS component on a device side surface of a first semiconductor substrate; a second semiconductor substrate bonded to the device side surface of the first semiconductor substrate by a first seal patterned to form sidewalls that surround the MEMS component; a third semiconductor substrate having a second seal extending from a surface and bonded to the backside surface of the first semiconductor substrate by the second seal, the second seal forming sidewalls of a gap beneath the MEMS component. A trench extends through the first semiconductor substrate and at least partially surrounds the MEMS component. The third semiconductor substrate is mounted on a package substrate. A bond wire or ribbon bond couples the bond pad to a conductive lead on the package substrate; and mold compound covers the MEMS component, the bond wire, and a portion of the package substrate.

    Semiconductor systems having premolded dual leadframes

    公开(公告)号:US10312184B2

    公开(公告)日:2019-06-04

    申请号:US14932055

    申请日:2015-11-04

    Abstract: A dual leadframe (100) for semiconductor systems comprising a first leadframe (110) having first metal zones separated by first gaps, the first zones including portions of reduced thickness and joint provisions in selected first locations, and further a second leadframe (120) having second metal zones separated by second gaps, the second zones including portions of reduced thickness and joint provisions (150) in selected second locations matching the first locations. The second leadframe is stacked on top of the first leadframe and the joint provisions of the matching second and first locations linked together. The resulting dual leadframe may further include insulating material (140) filling the first and second gaps and the zone portions of reduced thickness, and has insulating surfaces coplanar with the top and bottom metallic surfaces.

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