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    LITHOGRAPHY CONTAMINATION CONTROL
    22.
    发明公开
    LITHOGRAPHY CONTAMINATION CONTROL 审中-公开

    公开(公告)号：US20230273534A1

    公开(公告)日：2023-08-31

    申请号：US18311795

    申请日：2023-05-03

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chieh HSIEH ,  Tai-Yu CHEN ,  Cho-Ying LIN ,  Heng-Hsin LIU ,  Li-Jui CHEN ,  Shang-Chieh CHIEN

    IPC: G03F7/00 ,  G02B17/06 ,  H05G2/00

    CPC classification number: G03F7/70925 ,  G03F7/70033 ,  G02B17/0663 ,  G03F7/70491 ,  H05G2/008 ,  G03F7/70808

    Abstract: A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.

    LITHOGRAPHY CONTAMINATION CONTROL
    23.
    发明申请
    LITHOGRAPHY CONTAMINATION CONTROL 有权

    公开(公告)号：US20230060899A1

    公开(公告)日：2023-03-02

    申请号：US17461744

    申请日：2021-08-30

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chieh HSIEH ,  Tai-Yu CHEN ,  Cho-Ying LIN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

    IPC: G03F7/20 ,  H05G2/00 ,  G02B17/06

    Abstract: A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.

    FOCUS METROLOGY METHOD AND PHOTOLITHOGRAPHY METHOD AND SYSTEM
    26.
    发明申请
    FOCUS METROLOGY METHOD AND PHOTOLITHOGRAPHY METHOD AND SYSTEM 有权
    重点计量方法和光刻方法与系统

    公开(公告)号：US20160018743A1

    公开(公告)日：2016-01-21

    申请号：US14332116

    申请日：2014-07-15

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Hung-Ming KUO ,  Jui-Chun PENG ,  Heng-Hsin LIU ,  Yung-Yao LEE

    IPC: G03F7/20 ,  G01B11/06

    CPC classification number: G01B11/0608 ,  G03F7/70641 ,  G03F9/7026

    Abstract: The present disclosure provides a focus metrology method and photolithography method and system. The focus metrology method includes recognizing at least one relevant region and at least one irrelevant region on a workpiece surface, measuring a height of the relevant region and determining a focal length for an exposure process based on the measured height of the relevant region.

    Abstract translation: 本公开提供了一种重点测量方法和光刻方法和系统。 重点测量方法包括识别工件表面上的至少一个相关区域和至少一个不相关区域，基于相关区域的测量高度来测量相关区域的高度并确定曝光过程的焦距。

    BAKING APPARATUS FOR PRIMING SUBSTRATE
    27.
    发明申请
    BAKING APPARATUS FOR PRIMING SUBSTRATE 有权
    用于制作衬底的烘烤设备

    公开(公告)号：US20150296563A1

    公开(公告)日：2015-10-15

    申请号：US14252578

    申请日：2014-04-14

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Chien-Hung WANG ,  Ren-Jyh LEU ,  Shang-Wern CHANG ,  Heng-Hsin LIU

    IPC: H05B1/02 ,  H05B3/68

    CPC classification number: H05B1/0233 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6875

    Abstract: A baking apparatus for priming a substrate is provided, which includes a chamber, a hot plate and a barrier element. The hot plate is in the chamber and configured to bake the substrate on the hot plate. The barrier element is in contact with a periphery of the substrate and the hot plate to prevent contamination on a lower surface of the substrate. Another baking apparatus for priming a substrate is also provided, which includes a chamber and a hot plate. The hot plate is in the chamber and in full contact with a lower surface of the substrate to prevent contamination thereon.

    Abstract translation: 提供了一种用于启动基板的烘烤装置，其包括室，热板和屏障元件。 加热板在室内，并配置成将基板烘烤在热板上。 阻挡元件与衬底和热板的周边接触以防止在衬底的下表面上的污染。 还提供了另一种用于起泡衬底的烘烤装置，其包括腔室和热板。 热板在室内并与基底的下表面完全接触以防止其上的污染。

    IN-LINE INSPECTION AND CLEAN FOR IMMERSION LITHOGRAPHY
    28.
    发明申请
    IN-LINE INSPECTION AND CLEAN FOR IMMERSION LITHOGRAPHY 有权
    在线检查和清洁进行垂直扫描

    公开(公告)号：US20150241789A1

    公开(公告)日：2015-08-27

    申请号：US14189975

    申请日：2014-02-25

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Tung-Li WU ,  Heng-Hsin LIU ,  Jui-Chun PENG

    IPC: G03F7/20

    CPC classification number: G03F7/70341 ,  G03F7/70925

    Abstract: An immersion lithography apparatus includes a lens system, an immersion hood, a wafer stage, an inspection system and a cleaning fluid supplier. The lens system is configured to project a pattern onto a wafer. The immersion hood is configured to confine an immersion fluid between the lens system and the wafer, and includes a peripheral hole configured to suck up the immersion fluid. The wafer stage is configured to position the wafer under the lens system. The inspection system is configured to detect whether there is contamination in the peripheral hole. The cleaning fluid supplier is coupled to the inspection system and configured to supply a cleaning fluid through the peripheral hole to remove the contamination, in which the inspection system and the cleaning fluid supplier are coupled to the wafer stage.

    Abstract translation: 浸没式光刻设备包括透镜系统，浸没罩，晶片台，检查系统和清洁液供应器。 透镜系统被配置为将图案投影到晶片上。 浸没罩构造成在透镜系统和晶片之间限制浸没流体，并且包括构造成吸入浸没流体的周边孔。 晶片台被配置为将晶片定位在透镜系统下方。 检查系统被配置为检测外围孔中是否存在污染。 清洁流体供应器耦合到检查系统并且被配置为通过周边孔提供清洁流体以去除污染，其中检查系统和清洁流体供应器耦合到晶片台。

    OVERLAY SAMPLING METHODOLOGY
    29.
    发明申请
    OVERLAY SAMPLING METHODOLOGY 有权
    覆盖采样方法

    公开(公告)号：US20140240706A1

    公开(公告)日：2014-08-28

    申请号：US14252612

    申请日：2014-04-14

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Yung-Yao LEE ,  Ying-Ying WANG ,  Yi-Ping HSIEH ,  Heng-Hsin LIU

    IPC: G01B11/14

    CPC classification number: G03F7/70633 ,  G01B11/14 ,  G01B2210/56

    Abstract: A process of measuring overlay metrologies of wafers, the wafer having a plurality of patterned layers. The process begins with retrieving historical overlay metrologies from a database, and real overlay metrologies of a first group of the wafers are measured. On the other hand, virtual overlay metrologies of a second group of the wafers are calculated with the retrieved historical overly metrologies. The real overlay metrologies of the first group of the wafers and the virtual overlay metrologies of the second group of the wafers are stored to the database as the historical overlay metrologies.

    Abstract translation: 测量晶片叠加计量的过程，晶片具有多个图案化层。 该过程开始于从数据库中检索历史叠加计量，并且测量第一组晶片的实际重叠计量。 另一方面，第二组晶片的虚拟覆盖计量学用所检索的历史过度计量来计算。 第一组晶圆的真实覆盖计量学和第二组晶圆的虚拟覆盖计量学作为历史重叠计量存储到数据库。

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