公开(公告)号：US10037973B2

公开(公告)日：2018-07-31

申请号：US15211663

申请日：2016-07-15

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Hua-Wei Tseng ,  Shang-Yun Tu ,  Hsu-Hsien Chen ,  Hao-Juin Liu ,  Chen-Shien Chen ,  Ming Hung Tseng ,  Chita Chuang

IPC分类号： H01L21/56 ,  H01L25/065 ,  H01L23/31 ,  H01L23/00 ,  H01L23/532

CPC分类号： H01L25/0657 ,  H01L21/563 ,  H01L23/3142 ,  H01L23/3157 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/53214 ,  H01L23/53233 ,  H01L23/53257 ,  H01L23/5329 ,  H01L23/562 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0231 ,  H01L2224/02351 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/03831 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05085 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05687 ,  H01L2224/1132 ,  H01L2224/11424 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11472 ,  H01L2224/11903 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/83862 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2924/381 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01051 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01013 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor package structure is provided. A semiconductor substrate comprising a conductive pad is provided, wherein the conductive pad is coupled with a circuitry of the semiconductor substrate. A patterned passivation layer exposing a portion of the conductive pad is formed. An uneven surface of the conductive pad is formed. A photoresist is formed on the semiconductor substrate. The photoresist is exposed under a light beam, wherein the light beam is scattered by the uneven surface. The photoresist is developed to form an opening in the photoresist so as to expose the conductive pad and form a plurality of cavities in the remaining photoresist. A conductive material is formed in the opening and the plurality of cavities.