摘要:
In a coating and developing treatment for a substrate, the present invention comprises the steps of: supplying a coating solution to the substrate to form a coating layer on the substrate; performing a developing treatment for the substrate in the processing zone after it undergoes an exposure processing by an aligner not included in the system; and carrying the substrate into the chamber after the step of forming the coating layer and before the exposure processing and thereafter reducing the pressure inside the airtightly closed chamber to a predetermined pressure to remove impurities adhering to the substrate inside the chamber from the substrate for a predetermined time, wherein the predetermined pressure and the predetermined time are adjusted based on the density of the impurities measured inside the processing zone. According to the present invention, impurities at a molecule level such as moisture, vapor, oxygen, ozone, and organic substance, and impurities such as fine particles, which adhere to the coating layer of the substrate, can be removed before the exposure processing so that the exposure processing can be performed in a preferable condition. Since the pressure, time, and pressure-reducing speed at the time of reducing the pressure are adjusted based on the density of the impurities measured in a predetermined position, the impurities adhering to the substrate such as moisture and oxygen can be removed under a preferable minimum requirement condition according to the adhering amount of the impurities.
摘要:
A substrate is horizontally held by a substrate holding portion freely movable in the Y-direction, and a nozzle portion is provided above and opposing the substrate, and movable in X-direction corresponding to the coating liquid feeding region of the substrate. A discharge opening is formed at a lower end of the nozzle portion, and a channel connecting the discharge opening with a coating liquid feed tube coupled to an upper end of the nozzle portion is formed within the discharge opening. At the midstream of the channel, a liquid pool portion larger in diameter than the discharge opening is formed, the inside of which is provided with a filtering member formed by porous bodies blocking the channel. The filtering member forms a pressure loss portion, which absorbs pulsation occurring at the coating liquid feed tube before it reaches the discharge opening.
摘要:
A system for supplying a chemical to a substrate to form a liquid film of the chemical on the substrate. The system includes a plate having a slit between a nozzle portion movable in lateral directions, and a substrate held by a substrate holding portion movable in longitudinal directions. Shock eliminating portions, provided at left and right ends of the slit, inhibit mist from being produced from a coating liquid supplied outside of the slit. A pair of shutters are capable of washing the coating liquid received by the surfaces of the shock eliminating portions. In the vicinity of the slit, a suction port is provided over a range corresponding to a movable region of the nozzle for sucking mist produced when the nozzle is scanned to carry out coating. The plate has a slit for dispersing a downward flow outside of the slit.
摘要:
The present invention includes a current plate which is arranged above a substrate in a chamber. A pressure inside the chamber is reduced by exhaust means and drying processing is performed on, for example, a coating solution on the substrate. On a peripheral portion of an underneath surface of the current plate, formed is a ring-shaped protrusion corresponding to a peripheral portion of the substrate. A protruding portion of a coating solution at the peripheral portion of the substrate is made flat by air current generated when the pressure is reduced, and consequently a coating film with a uniform film thickness as a whole is formed on the substrate.
摘要:
A resist solution discharge nozzle for discharging a resist solution to a wafer is moved at a constant speed along a radial direction of the wafer while the wafer is being rotated. During this movement, the amount of the resist solution to be discharged from the resist solution discharge nozzle is gradually decreased. The resist solution discharged to the wafer is applied to the front surface of the wafer drawing a spiral track, and coating amounts of the resist solution per unit area with respect to a central portion and a peripheral portion of the wafer can be made equal. Accordingly, waste of a processing solution supplied onto a substrate can be eliminated, and a uniform processing solution film can be formed on the substrate.
摘要:
The present invention is a template treatment apparatus forming a film of a release agent on a template having a transfer pattern formed on a front surface thereof, the template treatment apparatus including: a treatment station forming a film of a release agent on the front surface of the template; and a template carry-in/out station capable of keeping a plurality of the templates, and carrying the template into/out of the treatment station, wherein the treatment station includes: a cleaning unit cleaning the front surface of the template; a coating unit applying a release agent to the cleaned front surface of the template; a heating unit baking the applied release agent; and a carry unit carrying the template to the cleaning unit, the coating unit, and the heating unit.
摘要:
Disclosed is a method for producing a water absorbent resin, by which a surface-crosslinked water absorbent resin having excellent physical properties can be efficiently obtained at low cost, while assuring high productivity. When the production scale is increased to a continuous production at 1 t/hr or more, the physical properties are improved and stabilized (for example, standard deviation of the physical properties is reduced) by a surface-crosslinking treatment, and the absorption against pressure (AAP) and liquid permeability (SFC) are further improved. Specifically disclosed is a method for producing a water absorbent resin, which is characterized in that the stirring shaft of the continuous mixing apparatus for the surface-crosslinking agent is heated during the mixing step of the surface-crosslinking agent or that the continuous mixing apparatus for the surface-crosslinking agent is operated at a pressure that is reduced relative to the ambient pressure and a gas flow is passed through the mixing apparatus during the mixing of the surface-crosslinking agent so that the gas flow in the mixing apparatus is 40° C. or more (when defined with respect to the gas temperature at the exit).
摘要:
There are provided an adhesion promoting process using a comparatively small amount of an adhesion promoting gas for processing a workpiece, an adhesion promoting device for carrying out the adhesion promoting process, a coating and developing system including the adhesion promoting device, and a storage medium storing a program specifying a set of instructions for carrying out the adhesion promoting process.The adhesion promoting process includes the steps of: placing a workpiece on a support table disposed in a processing space defined by a processing vessel; adjusting the temperature of the workpiece placed on the support table to a first temperature at which an adhesion promoting gas does not condense on the workpiece in dew drops; supplying the adhesion promoting gas to the temperature-controlled workpiece to make a surface of the workpiece hydrophobic through the interaction of molecules contained in the adhesion promoting gas and the surface of the workpiece; and adjusting the temperature of the workpiece to a second temperature higher than the first temperature to supply thermal energy to excessive molecules remaining on the surface of the workpiece and evacuating the processing space to remove the excessive molecules from the surface of the workpiece.
摘要:
A coating apparatus includes a liquid film forming mechanism configured to form a liquid film of a process liquid for preventing a contaminant derived from a coating liquid from being deposited or left on a back side peripheral portion of a substrate. The liquid film forming mechanism includes a counter face portion facing the back side peripheral portion of the substrate and a process liquid supply portion for supplying the process liquid onto the counter face portion. The coating apparatus further includes a posture regulating mechanism disposed around the substrate holding member and configured to damp a vertical wobble of the peripheral portion of the substrate being rotated. The posture regulating mechanism includes delivery holes arrayed in a rotational direction of the substrate and configured to deliver a gas onto a back side region of the substrate on an inner side of the peripheral portion.
摘要:
A heating apparatus is configured to include a hot plate at which a substrate is placed, a top plate opposed to the substrate, a gas discharging part provided on one end side of the hot plate for discharging gas between the hot plate and the top plate, an exhaust part provided to be opposed to the gas discharging part with the hot plate interposed therebetween, and a heating part independently heating a first region and a second region of the substrate. A heating process is performed with good within-wafer uniformity by forming an unidirectional flow to heat the first region and the second region at different temperatures.