Method and system for coating and developing
    21.
    发明申请
    Method and system for coating and developing 审中-公开
    涂层和开发方法和系统

    公开(公告)号:US20050048421A1

    公开(公告)日:2005-03-03

    申请号:US10964695

    申请日:2004-10-15

    摘要: In a coating and developing treatment for a substrate, the present invention comprises the steps of: supplying a coating solution to the substrate to form a coating layer on the substrate; performing a developing treatment for the substrate in the processing zone after it undergoes an exposure processing by an aligner not included in the system; and carrying the substrate into the chamber after the step of forming the coating layer and before the exposure processing and thereafter reducing the pressure inside the airtightly closed chamber to a predetermined pressure to remove impurities adhering to the substrate inside the chamber from the substrate for a predetermined time, wherein the predetermined pressure and the predetermined time are adjusted based on the density of the impurities measured inside the processing zone. According to the present invention, impurities at a molecule level such as moisture, vapor, oxygen, ozone, and organic substance, and impurities such as fine particles, which adhere to the coating layer of the substrate, can be removed before the exposure processing so that the exposure processing can be performed in a preferable condition. Since the pressure, time, and pressure-reducing speed at the time of reducing the pressure are adjusted based on the density of the impurities measured in a predetermined position, the impurities adhering to the substrate such as moisture and oxygen can be removed under a preferable minimum requirement condition according to the adhering amount of the impurities.

    摘要翻译: 在基材的涂布和显影处理中,本发明包括以下步骤:向基材供给涂布溶液以在基材上形成涂层; 在不包括在系统中的对准器进行曝光处理之后,对处理区中的基板进行显影处理; 并且在形成涂层的步骤之后并且在曝光处理之前将衬底运送到室中,然后将气密封闭室内的压力降低到预定压力,以从衬底移除附着在室内的衬底上的杂质,以预定 时间,其中基于在处理区内测量的杂质的密度来调整预定压力和预定时间。 根据本发明,在曝光处理之前可以除去附着在基材的涂层上的分子水平的杂质如水分,蒸汽,氧气,臭氧和有机物质以及粘附到基材的涂层的杂质如细颗粒 可以在优选的条件下进行曝光处理。 由于基于在预定位置测量的杂质的密度来调节压力降低时的压力,时间和减压速度,因此可以在优选的情况下去除附着在基底上的杂质,例如水分和氧气 最低要求条件根据杂质的粘附量。

    Coating film forming apparatus
    22.
    发明授权
    Coating film forming apparatus 失效
    涂膜成膜装置

    公开(公告)号:US06811613B2

    公开(公告)日:2004-11-02

    申请号:US10298932

    申请日:2002-11-19

    IPC分类号: B05B1100

    摘要: A substrate is horizontally held by a substrate holding portion freely movable in the Y-direction, and a nozzle portion is provided above and opposing the substrate, and movable in X-direction corresponding to the coating liquid feeding region of the substrate. A discharge opening is formed at a lower end of the nozzle portion, and a channel connecting the discharge opening with a coating liquid feed tube coupled to an upper end of the nozzle portion is formed within the discharge opening. At the midstream of the channel, a liquid pool portion larger in diameter than the discharge opening is formed, the inside of which is provided with a filtering member formed by porous bodies blocking the channel. The filtering member forms a pressure loss portion, which absorbs pulsation occurring at the coating liquid feed tube before it reaches the discharge opening.

    摘要翻译: 基板由能够沿Y方向自由移动的基板保持部水平保持,并且在基板的上方并且与基板相对设置有喷嘴部,并且能够在与基板的涂布液供给区域对应的X方向上移动。 在喷嘴部的下端形成有排出口,在喷出口内形成有将排出口与与喷嘴部的上端连结的涂液供给管连结的流路。 在通道的中部,形成直径大于排出口的液体池部分,其内部设置有由堵塞通道的多孔体形成的过滤构件。 过滤构件形成压力损失部分,其在到达排出口之前吸收在涂液供给管处发生的脉动。

    Coating film forming system
    23.
    发明授权
    Coating film forming system 失效
    涂膜成型系统

    公开(公告)号:US06761125B2

    公开(公告)日:2004-07-13

    申请号:US10242711

    申请日:2002-09-13

    IPC分类号: B05B1504

    CPC分类号: H01L21/6715

    摘要: A system for supplying a chemical to a substrate to form a liquid film of the chemical on the substrate. The system includes a plate having a slit between a nozzle portion movable in lateral directions, and a substrate held by a substrate holding portion movable in longitudinal directions. Shock eliminating portions, provided at left and right ends of the slit, inhibit mist from being produced from a coating liquid supplied outside of the slit. A pair of shutters are capable of washing the coating liquid received by the surfaces of the shock eliminating portions. In the vicinity of the slit, a suction port is provided over a range corresponding to a movable region of the nozzle for sucking mist produced when the nozzle is scanned to carry out coating. The plate has a slit for dispersing a downward flow outside of the slit.

    摘要翻译: 一种用于向基板供应化学品以在基板上形成化学品的液膜的系统。 该系统包括在横向可移动的喷嘴部分之间具有狭缝的板,以及由可在纵向方向上移动的基板保持部分保持的基板。 设置在狭缝的左右两端的冲击消除部防止了从供给到狭缝外部的涂布液产生雾。 一对百叶窗能够清洗由冲击消除部分的表面接收的涂布液。 在狭缝附近,在与喷嘴的可动区域对应的范围内设置有吸入口,用于吸引喷嘴被扫描时产生的雾以进行涂布。 该板具有用于在狭缝之外分散向下流动的狭缝。

    Substrate processing unit and processing method
    24.
    发明授权
    Substrate processing unit and processing method 失效
    基板加工单元及加工方法

    公开(公告)号:US06599366B1

    公开(公告)日:2003-07-29

    申请号:US09711968

    申请日:2000-11-15

    IPC分类号: B05C1106

    CPC分类号: H01L21/6715

    摘要: The present invention includes a current plate which is arranged above a substrate in a chamber. A pressure inside the chamber is reduced by exhaust means and drying processing is performed on, for example, a coating solution on the substrate. On a peripheral portion of an underneath surface of the current plate, formed is a ring-shaped protrusion corresponding to a peripheral portion of the substrate. A protruding portion of a coating solution at the peripheral portion of the substrate is made flat by air current generated when the pressure is reduced, and consequently a coating film with a uniform film thickness as a whole is formed on the substrate.

    摘要翻译: 本发明包括一个布置在腔室中的衬底上方的电流板。 通过排气装置降低室内的压力,并且例如对基板上的涂布溶液进行干燥处理。 在当前板的下表面的周边部分上形成有与基板的周边部分对应的环形突起。 通过在压力降低时产生的气流使基板周边部分的涂布液的突出部分变得平坦,因此在基板上形成整体上具有均匀膜厚的涂膜。

    Film forming method and film forming apparatus
    25.
    发明授权
    Film forming method and film forming apparatus 有权
    成膜方法和成膜装置

    公开(公告)号:US06371667B1

    公开(公告)日:2002-04-16

    申请号:US09545003

    申请日:2000-04-06

    IPC分类号: G03D500

    CPC分类号: G03D5/00

    摘要: A resist solution discharge nozzle for discharging a resist solution to a wafer is moved at a constant speed along a radial direction of the wafer while the wafer is being rotated. During this movement, the amount of the resist solution to be discharged from the resist solution discharge nozzle is gradually decreased. The resist solution discharged to the wafer is applied to the front surface of the wafer drawing a spiral track, and coating amounts of the resist solution per unit area with respect to a central portion and a peripheral portion of the wafer can be made equal. Accordingly, waste of a processing solution supplied onto a substrate can be eliminated, and a uniform processing solution film can be formed on the substrate.

    摘要翻译: 用于将抗蚀剂溶液放电到晶片的抗蚀剂溶液排出喷嘴在晶片旋转的同时沿着晶片的径向以恒定的速度移动。 在该运动中,从抗蚀剂溶液排出喷嘴排出的抗蚀剂溶液的量逐渐降低。 将排出到晶片的抗蚀剂溶液施加到晶片的前表面,从而绘制螺旋轨道,并且可以使相对于晶片的中心部分和周边部分的每单位面积的抗蚀剂溶液的涂布量相等。 因此,能够消除供给到基板上的处理液的浪费,能够在基板上形成均匀的处理液膜。

    Polyacrylic acid (salt)-type water absorbent resin and method for producing of same

    公开(公告)号:US08772413B2

    公开(公告)日:2014-07-08

    申请号:US13392639

    申请日:2010-08-27

    IPC分类号: C08F2/01

    摘要: Disclosed is a method for producing a water absorbent resin, by which a surface-crosslinked water absorbent resin having excellent physical properties can be efficiently obtained at low cost, while assuring high productivity. When the production scale is increased to a continuous production at 1 t/hr or more, the physical properties are improved and stabilized (for example, standard deviation of the physical properties is reduced) by a surface-crosslinking treatment, and the absorption against pressure (AAP) and liquid permeability (SFC) are further improved. Specifically disclosed is a method for producing a water absorbent resin, which is characterized in that the stirring shaft of the continuous mixing apparatus for the surface-crosslinking agent is heated during the mixing step of the surface-crosslinking agent or that the continuous mixing apparatus for the surface-crosslinking agent is operated at a pressure that is reduced relative to the ambient pressure and a gas flow is passed through the mixing apparatus during the mixing of the surface-crosslinking agent so that the gas flow in the mixing apparatus is 40° C. or more (when defined with respect to the gas temperature at the exit).

    Adhesion promoting process, adhesion promoting device, coating and developing system and storage medium
    28.
    发明授权
    Adhesion promoting process, adhesion promoting device, coating and developing system and storage medium 有权
    粘合促进过程,粘附促进装置,涂层和显影系统和储存介质

    公开(公告)号:US08304020B2

    公开(公告)日:2012-11-06

    申请号:US12364729

    申请日:2009-02-03

    IPC分类号: C23C16/00 B05D5/10 B05D3/00

    CPC分类号: G03B27/52 C09J5/02

    摘要: There are provided an adhesion promoting process using a comparatively small amount of an adhesion promoting gas for processing a workpiece, an adhesion promoting device for carrying out the adhesion promoting process, a coating and developing system including the adhesion promoting device, and a storage medium storing a program specifying a set of instructions for carrying out the adhesion promoting process.The adhesion promoting process includes the steps of: placing a workpiece on a support table disposed in a processing space defined by a processing vessel; adjusting the temperature of the workpiece placed on the support table to a first temperature at which an adhesion promoting gas does not condense on the workpiece in dew drops; supplying the adhesion promoting gas to the temperature-controlled workpiece to make a surface of the workpiece hydrophobic through the interaction of molecules contained in the adhesion promoting gas and the surface of the workpiece; and adjusting the temperature of the workpiece to a second temperature higher than the first temperature to supply thermal energy to excessive molecules remaining on the surface of the workpiece and evacuating the processing space to remove the excessive molecules from the surface of the workpiece.

    摘要翻译: 提供了使用相对少量用于加工工件的粘附促进气体的粘合促进方法,用于进行粘合促进过程的粘合促进装置,包括粘附促进装置的涂覆和显影系统以及存储 指定用于执行粘附促进过程的一组指令的程序。 粘合促进方法包括以下步骤:将工件放置在设置在由处理容器限定的处理空间中的支撑台上; 将放置在支撑台上的工件的温度调节到粘附促进气体在露滴中不会在工件上冷凝的第一温度; 将粘合促进气体供应到温度控制的工件,以通过包含在粘附促进气体中的分子与工件的表面的相互作用使工件的表面疏水化; 并且将工件的温度调节到高于第一温度的第二温度,以将热能提供给留在工件表面上的过量分子,并抽空处理空间以从工件的表面去除过量的分子。

    Coating apparatus and method
    29.
    发明授权
    Coating apparatus and method 有权
    涂布装置及方法

    公开(公告)号:US08256370B2

    公开(公告)日:2012-09-04

    申请号:US12390752

    申请日:2009-02-23

    摘要: A coating apparatus includes a liquid film forming mechanism configured to form a liquid film of a process liquid for preventing a contaminant derived from a coating liquid from being deposited or left on a back side peripheral portion of a substrate. The liquid film forming mechanism includes a counter face portion facing the back side peripheral portion of the substrate and a process liquid supply portion for supplying the process liquid onto the counter face portion. The coating apparatus further includes a posture regulating mechanism disposed around the substrate holding member and configured to damp a vertical wobble of the peripheral portion of the substrate being rotated. The posture regulating mechanism includes delivery holes arrayed in a rotational direction of the substrate and configured to deliver a gas onto a back side region of the substrate on an inner side of the peripheral portion.

    摘要翻译: 涂布装置包括:液膜形成机构,其被构造成形成用于防止来自涂布液的污染物沉积或留在基板的背面周边部分上的处理液体的液膜。 液膜形成机构包括面对基板的后侧周边部分的相对面部分和用于将处理液体供给到对面部分上的处理液体供应部分。 所述涂布装置还包括姿势调节机构,所述姿势调节机构设置在所述基板保持部件周围,并且被配置为抑制正在旋转的所述基板的周边部分的垂直摆动。 所述姿势调节机构包括沿所述基板的旋转方向排列的排出孔,其构造成在所述周边部的内侧将气体输送到所述基板的背侧区域。

    Heating apparatus, coating and development apparatus, and heating method
    30.
    发明授权
    Heating apparatus, coating and development apparatus, and heating method 有权
    加热装置,涂装开发装置和加热方法

    公开(公告)号:US08025925B2

    公开(公告)日:2011-09-27

    申请号:US11378319

    申请日:2006-03-20

    IPC分类号: B05D3/02 H05B3/68 C23C16/00

    摘要: A heating apparatus is configured to include a hot plate at which a substrate is placed, a top plate opposed to the substrate, a gas discharging part provided on one end side of the hot plate for discharging gas between the hot plate and the top plate, an exhaust part provided to be opposed to the gas discharging part with the hot plate interposed therebetween, and a heating part independently heating a first region and a second region of the substrate. A heating process is performed with good within-wafer uniformity by forming an unidirectional flow to heat the first region and the second region at different temperatures.

    摘要翻译: 加热装置构成为包括放置基板的加热板,与基板相对的顶板,设置在热板的一端侧的气体排出部,用于在加热板和顶板之间排出气体, 排气部,设置成与所述气体排出部相对设置,其间插入有所述热板;加热部,​​独立地加热所述基板的第一区域和第二区域。 通过形成单向流以在不同温度下加热第一区域和第二区域,进行具有良好的晶片内均匀性的加热过程。