利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

44 条记录 (耗时 0.033 秒)

    NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    22.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    氮化物半导体器件及其制造方法

    公开(公告)号：US20070231978A1

    公开(公告)日：2007-10-04

    申请号：US11691049

    申请日：2007-03-26

    申请人： Kyozo KANAMOTO ,  Katsuomi Shiozawa ,  Kazushige Kawasaki ,  Hitoshi Sakuma ,  Yoshiyuki Suehiro

    发明人： Kyozo KANAMOTO ,  Katsuomi Shiozawa ,  Kazushige Kawasaki ,  Hitoshi Sakuma ,  Yoshiyuki Suehiro

    IPC分类号： H01L21/84

    CPC分类号： H01S5/0425 ,  H01S5/0206 ,  H01S5/0421 ,  H01S5/22 ,  H01S5/32341

    摘要： A nitride semiconductor device and its manufacturing method are provided which are capable of achieving low-resistance ohmic properties and high adhesion. A nitride semiconductor device has an n-type GaN substrate over which a semiconductor element is formed and an n-electrode as a metal electrode formed over the back surface of the GaN substrate. A surface denatured layer functioning as a carrier supply layer is provided between the GaN substrate and the n-electrode. The surface denatured layer is formed by denaturing the back surface of the GaN substrate by causing it to react with a material that contains silicon.

    摘要翻译： 提供了能够实现低电阻欧姆特性和高粘合性的氮化物半导体器件及其制造方法。 氮化物半导体器件具有形成半导体元件的n型GaN衬底和形成在GaN衬底的背面上的作为金属电极的n电极。 用作载体供给层的表面变性层设置在GaN衬底和n电极之间。 表面变性层通过使其与含有硅的材料反应而使GaN衬底的背面变性而形成。

    Agent and method for removing organic chlorine compounds
    23.
    发明申请
    Agent and method for removing organic chlorine compounds 审中-公开
    用于除去有机氯化合物的试剂和方法

    公开(公告)号：US20050109982A1

    公开(公告)日：2005-05-26

    申请号：US10971307

    申请日：2004-10-25

    申请人： Keita Yura ,  Masaaki Matsubara ,  Yasuko Yakou ,  Hitoshi Sakuma ,  Yoshikazu Seki ,  Satoshi Furuta ,  Koji Yamamoto

    发明人： Keita Yura ,  Masaaki Matsubara ,  Yasuko Yakou ,  Hitoshi Sakuma ,  Yoshikazu Seki ,  Satoshi Furuta ,  Koji Yamamoto

    IPC分类号： B09C1/02 ,  B09C1/00 ,  B09C1/08 ,  C02F1/70 ,  C09K3/00

    CPC分类号： B09C1/002 ,  B09C1/08 ,  C02F1/705 ,  C02F2101/36 ,  C02F2103/06

    摘要： An agent for removing organic chlorine compounds which is composed of (A) an iron powder having a BET specific surface area of from 0.010 to 3 m2/g, and (B1) a powder of at least one species of metal selected from the group VIII elements (excluding Fe) in the periodic table, and/or (B2) a porous substance in powder form supporting said metal. If the agent is composed of (A) and (B1), the amount of (B1) is 0.01 to 10 parts by mass for 100 parts by mass of (A). If the agent is composed of (A) and (B2), the amount of (B2) is 0.0001 to 10 parts by mass for 100 parts by mass of (A). This agent is capable of removing organic chlorine compounds efficiently.

    摘要翻译： 一种除去有机氯化合物的试剂，其由（A）BET比表面积为0.010〜3m 2 / g的铁粉和（B1）至少一种 选自周期表中VIII族元素（不包括Fe）的金属和/或（B2）支撑所述金属的粉末形式的多孔物质。 如果试剂由（A）和（B1）组成，则（B1）的量为（A）100质量份时为0.01〜10质量份。 如果试剂由（A）和（B2）组成，则对（100）（A）100质量份，（B2）的量为0.0001〜10质量份。 该试剂能有效去除有机氯化合物。

    Powder mixture used for powder metallurgy
    25.
    发明授权
    Powder mixture used for powder metallurgy 失效
    用于粉末冶金的粉末混合物

    公开(公告)号：US5132338A

    公开(公告)日：1992-07-21

    申请号：US477770

    申请日：1990-02-09

    申请人： Takehiko Hayami ,  Hitoshi Sakuma ,  Jiro Chosokabe

    发明人： Takehiko Hayami ,  Hitoshi Sakuma ,  Jiro Chosokabe

    IPC分类号： B22F3/02 ,  B22F1/00 ,  C08K3/08 ,  C08K3/24 ,  C08L33/06

    CPC分类号： B22F1/0059 ,  C08K3/08

    摘要： A powder mixture used for powder metallurgy containing a metal powder as a substrate, in which a copolymer comprising the following monomer ingredients as a binder is blended:______________________________________ acrylic acid ester: 20 to 70 parts by weight methacrylic acid ester: 80 to 30 parts by weight polymerizable unsaturated acid: 0.5 to 9 parts by weight based on 100 parts by weight of the sum for the acrylic ester and the methacrylic acid ester, ______________________________________ as a binder is blended therewith.The powder mixture used for powder metallurgy is manufactured by mixing the starting powdery metal material with the starting powdery material for the physical property improving ingredient, adding the solution of the binder thereto and then applying stirring and drying.Graphite segregation can be prevented without de-naturing or reducing flow rate of the substrate metal and dusting upon handling can be suppressed.

    摘要翻译： 用于粉末冶金的粉末混合物包含金属粉末作为基质，其中包含以下单体成分作为粘合剂的共聚物：丙烯酸酯：20〜70重量份 - 甲基丙烯酸酯：80〜30重量份 相对于 - 丙烯酸酯和 - 甲基丙烯酸酯的总和为100重量份，作为粘合剂混合，其重均分子量为0.5〜9重量份。 用于粉末冶金的粉末混合物通过将起始粉末金属材料与用于物理性能改进成分的起始粉末材料混合，将粘合剂溶液加入其中，然后进行搅拌和干燥而制备。 可以防止石墨偏析而不使基体金属变形或降低流速，并且可以抑制处理时的粉尘。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    27.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号：US20100244074A1

    公开(公告)日：2010-09-30

    申请号：US12716399

    申请日：2010-03-03

    申请人： Takafumi Oka ,  Shinji Abe ,  Kazushige Kawasaki ,  Junichi Horie ,  Hitoshi Sakuma

    发明人： Takafumi Oka ,  Shinji Abe ,  Kazushige Kawasaki ,  Junichi Horie ,  Hitoshi Sakuma

    IPC分类号： H01L33/58

    CPC分类号： H01S5/34306 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/3213

    摘要： A semiconductor light-emitting device and a manufacturing method are provided, in which a metal film is deposited with positional differences between edges of an insulating film and the metal film, opposite a ridge waveguide top face, utilizing an overhanging-shaped resist pattern. An opening through the insulating film is extended in width without another masking step by etching the insulation film on the ridge waveguide top face, using the metal film as a mask. The contact area between a p-side electrode and a p-type contact layer is increased and operating voltage of the semiconductor light-emitting device is reduced.

    摘要翻译： 提供了一种半导体发光器件和制造方法，其中利用突出形状的抗蚀剂图案，沉积金属膜，其间绝缘膜和金属膜的边缘之间的位置差异与脊形波导顶面相对。 通过使用金属膜作为掩模，通过蚀刻脊形波导顶面上的绝缘膜，通过绝缘膜延伸宽度而不进行另一掩蔽步骤。 p侧电极和p型接触层之间的接触面积增大，半导体发光元件的工作电压降低。

    METHOD FOR MANUFACTURING MULTIPLE-WAVELENGTH SEMICONDUCTOR LASER
    28.
    发明申请
    METHOD FOR MANUFACTURING MULTIPLE-WAVELENGTH SEMICONDUCTOR LASER 审中-公开
    制造多波长半导体激光器的方法

    公开(公告)号：US20100190282A1

    公开(公告)日：2010-07-29

    申请号：US12469755

    申请日：2009-05-21

    申请人： Yasuaki Yoshida ,  Hitoshi Sakuma

    发明人： Yasuaki Yoshida ,  Hitoshi Sakuma

    IPC分类号： H01L21/00

    CPC分类号： H01S5/4043 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/02272 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4087 ,  H01S2304/04

    摘要： A method for manufacturing a multiple-wavelength semiconductor laser comprises: forming a first bar having an array of first semiconductor chips, wherein at least two semiconductor lasers producing light of different wavelengths are monolithically formed; forming a second bar having an array of second semiconductor chips, wherein a semiconductor laser producing light having a different wavelength from the light produced by the semiconductor lasers of the first semiconductor chips is formed; forming a third bar by locating a laser-forming surface of said first bar facing a back surface of the second bar, and joining respective first semiconductor chips in the first bar to respective second semiconductor chips in the second bar; forming scribe lines by irradiating boundaries of the first semiconductor chips and boundaries of the second semiconductor chips with laser beams, and dividing the third bar along the scribe lines into respective chips.

    摘要翻译： 一种制造多波长半导体激光器的方法包括：形成具有第一半导体芯片阵列的第一条，其中产生不同波长的光的至少两个半导体激光器是单片形成的; 形成具有第二半导体芯片阵列的第二条形状，其中形成具有与由第一半导体芯片的半导体激光器产生的光不同波长的光的半导体激光器; 通过将所述第一杆的激光形成表面定位成朝向所述第二杆的后表面，并将所述第一杆中的相应的第一半导体芯片连接到所述第二杆中的相应的第二半导体芯片来形成第三棒; 通过用激光束照射第一半导体芯片的边界和第二半导体芯片的边界来形成划线，并且沿着划线将第三条线划分成各自的芯片。