摘要:
Polycrystalline diamond includes cubic diamond and hexagonal diamond, and a ratio of X-ray diffraction peak intensity of a (100) plane of the hexagonal diamond to X-ray diffraction peak intensity for a (111) plane of cubic diamond is not lower than 0.01%. In addition, a present method of manufacturing polycrystalline diamond includes the steps of preparing a non-diamond carbon material having a degree of graphitization not higher than 0.58 and directly converting the non-diamond carbon material to cubic diamond and hexagonal diamond and sintering the non-diamond carbon material, without adding any of a sintering agent and a binder, under pressure and temperature conditions at which diamond is thermodynamically stable.
摘要:
A deforming mechanism for deforming a transmissive optical element comprises a rotation member configured to hold the optical element and to rotate around an axis parallel to a tangential line of a circumference of the optical element at a portion where the rotation member holds the optical element, so as to deform the optical element by the rotation, a torque generating unit configured to generate a torque to rotate the rotation member around the axis, a holding base, and an elastic member connecting the holding base to the torque generating unit.
摘要:
In a non-contact power feeding apparatus of the present invention, power is fed through an air gap from a power transmission coil of a power feeding side circuit to a power receiving coil of a power receiving side circuit, which are closely located to face each other, based on a mutual induction effect of electromagnetic induction. The power transmission coil and the power receiving coil are respectively composed of a planar assembly of a number of unit coils. Each unit coil is formed in a spirally wound flat structure, wherein the direction of an electric current is set in reverse to make the north and south magnetic poles reverse between each unit coil which is juxtaposed to another to directly come into line. As a result, the unit coils, which are juxtaposed to another to directly come into line, are provided in such a manner that an overlapping area of a respectively formed magnetic field cancels another out to be offset
摘要:
There are provided an inspection apparatus and method that can locally perform sample temperature regulation, so that the sample drift can be suppressed. There are included a sample stage 109 that holds a semiconductor sample 118, multiple probes 106 used to measure electrical characteristics of a semiconductor device on the semiconductor sample 118, a power source that applies voltage and/or current to the probe 106, a detector that measures electrical characteristics of the semiconductor device on the sample with which the probe is brought into contact, and an electromagnetic wave irradiating mechanism that irradiates electromagnetic wave on a measurement section of the semiconductor sample 118.
摘要:
A histogram is generated from image data, and two distribution areas are detected. A gamma curve used for gamma correction of the image data is changed into a gamma curve corresponding to the luminance ranges of the two distribution areas. The luminance values of each pixel in the two distribution areas are converted by the gamma correction using the changed gamma curve, and the luminance ranges of the two distribution areas are expanded to the higher luminance side while the relative relation of the luminance the pixels is maintained.
摘要:
A communication system for obtaining predetermined information from an underwater terminal via a sonobuoy is provided. The system includes an underwater terminal for transmitting and receiving sound wave signals, a base station apparatus for transmitting and receiving radio wave signals, and a plurality of sonobuoys for transmitting and receiving the sound wave signals to and from the underwater terminal, and for transmitting and receiving the radio wave signals to and from the base station apparatus.
摘要:
A method of irradiating at least a part of a semiconductor film on the substrate with a CW or pseudo-CW laser beam so as to grow crystals laterally. A region over the semiconductor film having Si as a chief component is provided with a pixel region, a gate line driving circuit region and a signal line driving circuit region for driving pixels, and a terminal region where connection terminals will be formed. The region not irradiated with the CW laser beam is provided in a peripheral portion of each semiconductor device corresponding to the position where the glass substrate will be cut. Due to this means, it is possible to suppress occurrence of a failure caused by propagation of cracks when the substrate is cut.
摘要:
An image display apparatus according to the present invention comprising a display panel that displays an image, a support unit that supports a rear surface of the display panel, and an exterior member that covers the support unit, wherein the support unit includes a first plate-like member and a second plate-like member, wherein the first plate-like member is fixed to the display panel at a first fixing area, wherein the second plate-like member is fixed to the first plate-like member at a second fixing area and to the exterior member at a third fixing area, and wherein the first fixing area and the second fixing area are arranged not in overlapped relation with each other at least within the third fixing area in a view projected on a surface parallel to a display surface of the display panel.
摘要:
An image display device of reduced cost is provided. A plurality of gate lines, a plurality of signal lines formed to cross the gate lines in a matrix fashion, and a plurality of thin-film transistors are formed on an insulating substrate, and the plurality of gate lines are laminated electrodes. The plurality of thin-film transistors are configured of transistors of two types of an n-channel conductivity type and a p-channel conductivity type. Gate electrodes of thin-film transistors of one type are laminated electrodes of the same configuration as the gate lines, and gate electrodes of thin-film transistors of the other type are configured of electrodes of the same layer as bottom electrodes of the gate lines.
摘要:
A pigment composition can be prepared by wet or dry milling a pigment selected from the group consisting of dianthraquinone pigments, diketopyrrolopyrrole pigments and a mixture thereof, in the presence of a compound represented by Formula 1: where Q denotes —NH(CH2)nNR1(R2) group or hydroxyl group, and R denotes —NH(CH2)nNR1(R2) group.