公开(公告)号：US08277889B2

公开(公告)日：2012-10-02

申请号：US12443487

申请日：2008-02-19

申请人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Osamu Yokoyama ,  Satoshi Taga

发明人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Osamu Yokoyama ,  Satoshi Taga

IPC分类号： C23C16/04 ,  C23C16/16 ,  C23C16/46

CPC分类号： C23C16/16 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/28562 ,  H01L21/76873

摘要： A film formation method is disclosed for depositing a metal film on a target substrate by supplying a metal carbonyl source in gas phase to a surface of the target substrate and decomposing the source near the surface of the target substrate. The method includes a step of preferentially decomposing the metal carbonyl source in an area near the outer peripheral portion of the target substrate when the metal film is being deposited on the surface of the target substrate. As a result, a CO concentration in the atmosphere is increased locally near the outer peripheral portion of the target substrate and the depositing of the metal film on the outer peripheral portion is better controlled.

摘要翻译： 公开了一种薄膜形成方法，用于通过将气相中的羰基金属源供给到目标基板的表面并在目标基板的表面附近分解源，在目标基板上沉积金属膜。 该方法包括当金属膜沉积在目标衬底的表面上时，优选在目标衬底的外围部分附近的区域中分解金属羰基源的步骤。 结果，气氛中的CO浓度在目标基板的外周部分局部增加，并且更好地控制金属膜在外周部分上的沉积。

公开(公告)号：US20110263123A1

公开(公告)日：2011-10-27

申请号：US13057380

申请日：2009-08-04

申请人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Satoshi Taga

发明人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Satoshi Taga

IPC分类号： H01L21/3205 ,  C23C16/458

CPC分类号： C23C16/52 ,  C23C16/16 ,  C23C16/45514 ,  C23C16/45521 ,  C23C16/45597 ,  C23C16/4585 ,  H01L21/67017 ,  H01L21/68785

摘要： Provided is a placing table structure which is disposed in a processing container and has a subject to be processed thereon so as to form a thin film on the subject in the processing container by using raw material gas which generates thermal decomposition reaction having reversibility. The placing table structure is provided with a placing table for placing the subject to be processed on a placing surface, i.e., an upper surface of the placing table structure, and a decomposition restraint gas supply means which is arranged in the placing table for the purpose of supplying decomposition restraint gas, which restraints thermal decomposition of the raw material gas, toward a peripheral section of the subject placed on the placing surface of the placing table.

摘要翻译： 提供了一种放置台结构，其设置在处理容器中并且要对其进行处理，以便通过使用产生具有可逆性的热分解反应的原料气体在处理容器中在被检体上形成薄膜。 放置台结构设置有用于将待处理对象放置在放置表面（即，放置台结构的上表面）的放置台和设置在放置台中的分解限制气体供应装置 提供限制原料气体的热分解的分解约束气体朝向放置在放置台的放置面的被处理体的周边部分。

公开(公告)号：US08999841B2

公开(公告)日：2015-04-07

申请号：US13566515

申请日：2012-08-03

申请人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Kenzi Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Kenzi Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H01L21/44 ,  H01L21/768 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/67 ,  C23C14/02 ,  C23C14/04 ,  C23C16/02 ,  C23C16/04 ,  H01L21/285

CPC分类号： H01L21/76841 ,  C23C14/02 ,  C23C14/046 ,  C23C16/02 ,  C23C16/045 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843

摘要： A semiconductor device manufacturing method includes: modifying a surface of a burying recess, of which surface is hydrophobic and which is formed in a dielectric film, to a hydrophilic state by supplying a plasma containing H ions and H radicals or a plasma containing NHx (x being 1, 2 or 3) ions and NHx radicals to the dielectric film formed on a substrate and containing silicon, carbon, hydrogen and oxygen, a bottom portion of the burying recess being exposed with a lower conductive layer; and directly forming an adhesion film formed of a Ru film on the hydrophilic surface of the recess. The method further includes burying copper forming a conductive path in the recess.

摘要翻译： 半导体器件制造方法包括：通过供给含有H离子和H基团的等离子体或包含NH x（x）的等离子体，将其表面是疏水性的并且形成在电介质膜中的掩埋凹槽的表面改性为亲水状态 是1,2或3）离子和NH x自由基，形成在衬底上并含有硅，碳，氢和氧的电介质膜，埋入凹部的底部用下导电层暴露; 并且在凹部的亲水性表面上直接形成由Ru膜形成的粘合膜。 该方法还包括在凹槽中形成导电路径的铜。

公开(公告)号：US08273409B2

公开(公告)日：2012-09-25

申请号：US13158180

申请日：2011-06-10

申请人： Masamichi Hara ,  Yasushi Mizusawa ,  Satoshi Taga ,  Atsushi Gomi ,  Tatsuo Hatano

发明人： Masamichi Hara ,  Yasushi Mizusawa ,  Satoshi Taga ,  Atsushi Gomi ,  Tatsuo Hatano

IPC分类号： C23C16/00

CPC分类号： C23C16/45559 ,  C23C16/16 ,  H01L21/28562

摘要： Disclosed is a method for film formation, characterized by comprising allowing a treatment gas stream containing a metal carbonyl-containing treatment gas and a carbon monoxide-containing carrier gas to flow into a region on the upper outside of the outer periphery of a substrate to be treated in a diameter direction of the substrate while avoiding the surface of the substrate and diffusing the metal carbonyl from the treatment gas stream into the surface of the substrate to form a metal film on the surface of the substrate.

摘要翻译： 本发明公开了一种成膜方法，其特征在于，含有含有含羰基金属的处理气体和一氧化碳的载气的处理气流流入基板的外周的上侧的区域，为 在衬底的直径方向处理，同时避免衬底的表面并将金属羰基从处理气流扩散到衬底的表面中，以在衬底的表面上形成金属膜。

公开(公告)号：US20120055403A1

公开(公告)日：2012-03-08

申请号：US13225049

申请日：2011-09-02

申请人： Atsushi GOMI ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Satoshi Taga ,  Chiaki Yasumuro

发明人： Atsushi GOMI ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Satoshi Taga ,  Chiaki Yasumuro

IPC分类号： C23C16/458 ,  C23C16/455 ,  C23C16/46

CPC分类号： H01L21/68785 ,  C23C16/4404 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/4586 ,  H01L21/67109

摘要： Provided is a mounting table structure for use in forming a thin film on a surface of a target object mounted on the mounting table structure by using a raw material gas including an organic metal compound in a processing chamber. The mounting table structure includes: a mounting table main body which mounts thereon the target object and has therein a heater; and a base which supports the mounting table main body while surrounding a side surface and a bottom surface of the mounting table main body, the base having therein a coolant path where a coolant flows therethrough and being maintained at a temperature higher than the solidification temperature or the liquefaction temperature of the raw material gas, but lower than the decomposition temperature of the raw material gas.

摘要翻译： 提供了一种用于在安装在安装台结构上的目标物体的表面上通过在处理室中使用包含有机金属化合物的原料气体来形成薄膜的安装台结构。 安装台结构包括：安装台主体，其安装在其上并具有加热器; 以及基部，其在围绕安装台主体的侧表面和底表面的同时支撑安装台主体，底座具有冷却剂流过其中并且保持在高于凝固温度的温度的冷却剂路径， 原料气体的液化温度低于原料气体的分解温度。

公开(公告)号：US20110203310A1

公开(公告)日：2011-08-25

申请号：US13057372

申请日：2009-08-04

申请人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Chiaki Yasumuro

发明人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Chiaki Yasumuro

IPC分类号： B01D53/14 ,  F25J1/02 ,  B01D47/00 ,  B01D53/78

CPC分类号： C23C16/4412 ,  B01D53/002 ,  B01D53/62 ,  B01D53/75 ,  B01D2257/706 ,  B01D2258/0216 ,  B01D2259/416 ,  C23C16/16 ,  Y02C20/30

摘要： A raw material recovery method for recovering a raw material of an organic metallic compound, which has the property of being stable toward a specific refrigerant without being decomposed thereby, from exhaust gas discharged from a treatment container in which a metallic thin film is formed on the surface of an object to be treated by using source gas obtained by vaporizing the raw material is characterized by being provided with a solidification step for solidifying the unreacted source gas by cooling the exhaust gas by bringing the exhaust gas into contact with the refrigerant and reprecipitating the raw material, and a recovery step for separating and recovering the raw material reprecipitated in the solidification step from the refrigerant. To provide a method for controlling an exhaust gas flow rate so that flow of gas in a processing chamber becomes uniform.

摘要翻译： 一种原料回收方法，用于从其中形成有金属薄膜的处理容器排出的废气中回收具有对特定制冷剂稳定的特性的有机金属化合物的原料， 通过使用通过蒸发原料获得的源气体处理的物体的表面的特征在于具有固化步骤，用于通过使废气与制冷剂接触而冷却排气来固化未反应的源气体，并再次沉淀 原料和用于分离和回收在固化步骤中从制冷剂中再沉淀的原料的回收步骤。 提供一种用于控制废气流量使得处理室中的气体流变得均匀的方法。

公开(公告)号：US08129271B2

公开(公告)日：2012-03-06

申请号：US12374216

申请日：2007-07-17

申请人： Yasuhiko Kojima ,  Taro Ikeda ,  Tatsuo Hatano

发明人： Yasuhiko Kojima ,  Taro Ikeda ,  Tatsuo Hatano

IPC分类号： H01L21/44 ,  C23C16/00

CPC分类号： C23C16/18 ,  H01L21/28556 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A film forming method is provided with a substrate placing step wherein a substrate is placed in a process chamber in an airtight status; a first film forming step wherein the process chamber is supplied with water vapor and a material gas including an organic compound of copper, and an adhered layer of copper is formed on the substrate; an exhaust step wherein the water vapor and the material gas in the process chamber are exhausted; and a second film forming step wherein the process chamber is resupplied with only the material gas and a copper film is further formed on the adhered layer.

摘要翻译： 一种成膜方法具有基板放置步骤，其中将基板以气密状态放置在处理室中; 第一成膜步骤，其中处理室被供应水蒸汽和包含铜的有机化合物的原料气体，并且在基板上形成铜的附着层; 排气步骤，其中处理室中的水蒸汽和原料气体被排出; 以及第二成膜步骤，其中处理室仅用原料气体再供给，并且在附着层上进一步形成铜膜。

公开(公告)号：US08133811B2

公开(公告)日：2012-03-13

申请号：US12374228

申请日：2007-06-15

申请人： Yasuhiko Kojima ,  Taro Ikeda ,  Tatsuo Hatano

发明人： Yasuhiko Kojima ,  Taro Ikeda ,  Tatsuo Hatano

IPC分类号： H01L21/44

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/18 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76867 ,  H01L21/76877

摘要： A semiconductor device, which suppresses formation of an organic impurity layer and has excellent adhesiveness to a copper film and a metal to be a base, is manufactured. A substrate (wafer W) coated with a barrier metal layer (base film) 13 formed of a metal having a high oxidation tendency, such as titanium, is placed in a processing chamber. At the time of starting to supply water vapor or after that, a material gas containing an organic compound of copper (for instance, Cu(hfac)TMVS) is supplied, and a copper film is formed on the surface of the barrier metal layer 13 whereupon the oxide layer 13a is formed by the water vapor. Then, heat treatment is performed on the wafer W, and the oxide layer 13a is converted into an alloy layer 13b of a metal and copper which constitute the barrier metal layer 13.

摘要翻译： 制造抑制有机杂质层的形成并且对铜膜和作为基底的金属具有优异的粘附性的半导体器件。 涂覆有由氧化倾向高的金属形成的阻挡金属层（基膜）13的基板（晶片W）如钛，被放置在处理室中。 在开始供给水蒸气之后，供给包含铜有机化合物（例如Cu（hfac）TMVS）的原料气体，并且在阻挡金属层13的表面上形成铜膜 于是氧化物层13a由水蒸汽形成。 然后，对晶片W进行热处理，将氧化物层13a转换成构成阻挡金属层13的金属和铜的合金层13b。

公开(公告)号：US20090181538A1

公开(公告)日：2009-07-16

申请号：US12374216

申请日：2007-07-17

申请人： Yasuhiko Kojima ,  Taro Ikeda ,  Tatsuo Hatano

发明人： Yasuhiko Kojima ,  Taro Ikeda ,  Tatsuo Hatano

IPC分类号： H01L21/285 ,  B05C11/00

CPC分类号： C23C16/18 ,  H01L21/28556 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A film forming method is provided with a substrate placing step wherein a substrate is placed in a process chamber in an airtight status; a first film forming step wherein the process chamber is supplied with water vapor and a material gas including an organic compound of copper, and an adhered layer of copper is formed on the substrate; an exhaust step wherein the water vapor and the material gas in the process chamber are exhausted; and a second film forming step wherein the process chamber is resupplied with only the material gas and a copper film is further formed on the adhered layer.

摘要翻译： 一种成膜方法具有基板放置步骤，其中将基板以气密状态放置在处理室中; 第一成膜步骤，其中处理室被供应水蒸汽和包含铜的有机化合物的原料气体，并且在基板上形成铜的附着层; 排气步骤，其中处理室中的水蒸气和原料气体被排出; 以及第二成膜步骤，其中处理室仅用原料气体再供给，并且在附着层上进一步形成铜膜。

公开(公告)号：US07063871B2

公开(公告)日：2006-06-20

申请号：US10617819

申请日：2003-07-14

申请人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Tsukasa Matsuda ,  Taro Ikeda ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Yumiko Kawano ,  Mitsuhiro Tachibana

发明人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Tsukasa Matsuda ,  Taro Ikeda ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Yumiko Kawano ,  Mitsuhiro Tachibana

IPC分类号： C23C16/16

CPC分类号： C23C16/16

摘要： A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.

摘要翻译： 金属CVD法包括将含有羰基金属化合物的气态源材料以与金属羰基化合物具有第一分压的方式相连接的待处理基板的表面的工艺空间引入的工序（A） 以及在金属羰基化合物具有第二较小分压的情况下，通过将含有羰基金属化合物的气态源材料引入到工艺空间中，在基板的表面上沉积金属膜的工序（B）。 进行步骤（A），使得金属膜不会在基板上实质上沉积。