公开(公告)号：US20120055403A1

公开(公告)日：2012-03-08

申请号：US13225049

申请日：2011-09-02

申请人： Atsushi GOMI ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Satoshi Taga ,  Chiaki Yasumuro

发明人： Atsushi GOMI ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Satoshi Taga ,  Chiaki Yasumuro

IPC分类号： C23C16/458 ,  C23C16/455 ,  C23C16/46

CPC分类号： H01L21/68785 ,  C23C16/4404 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/4586 ,  H01L21/67109

摘要： Provided is a mounting table structure for use in forming a thin film on a surface of a target object mounted on the mounting table structure by using a raw material gas including an organic metal compound in a processing chamber. The mounting table structure includes: a mounting table main body which mounts thereon the target object and has therein a heater; and a base which supports the mounting table main body while surrounding a side surface and a bottom surface of the mounting table main body, the base having therein a coolant path where a coolant flows therethrough and being maintained at a temperature higher than the solidification temperature or the liquefaction temperature of the raw material gas, but lower than the decomposition temperature of the raw material gas.

摘要翻译： 提供了一种用于在安装在安装台结构上的目标物体的表面上通过在处理室中使用包含有机金属化合物的原料气体来形成薄膜的安装台结构。 安装台结构包括：安装台主体，其安装在其上并具有加热器; 以及基部，其在围绕安装台主体的侧表面和底表面的同时支撑安装台主体，底座具有冷却剂流过其中并且保持在高于凝固温度的温度的冷却剂路径， 原料气体的液化温度低于原料气体的分解温度。

公开(公告)号：US08992686B2

公开(公告)日：2015-03-31

申请号：US13225049

申请日：2011-09-02

申请人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Satoshi Taga ,  Chiaki Yasumuro

发明人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Satoshi Taga ,  Chiaki Yasumuro

IPC分类号： C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/687 ,  C23C16/44 ,  C23C16/458 ,  H01L21/67

CPC分类号： H01L21/68785 ,  C23C16/4404 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/4586 ,  H01L21/67109

摘要： Provided is a mounting table structure for use in forming a thin film on a surface of a target object mounted on the mounting table structure by using a raw material gas including an organic metal compound in a processing chamber. The mounting table structure includes: a mounting table main body which mounts thereon the target object and has therein a heater; and a base which supports the mounting table main body while surrounding a side surface and a bottom surface of the mounting table main body, the base having therein a coolant path where a coolant flows therethrough and being maintained at a temperature higher than the solidification temperature or the liquefaction temperature of the raw material gas, but lower than the decomposition temperature of the raw material gas.

摘要翻译： 提供了一种用于在安装在安装台结构上的目标物体的表面上通过在处理室中使用包含有机金属化合物的原料气体来形成薄膜的安装台结构。 安装台结构包括：安装台主体，其安装在其上并具有加热器; 以及基部，其在围绕安装台主体的侧表面和底表面的同时支撑安装台主体，底座具有冷却剂流过其中并且保持在高于凝固温度的温度的冷却剂路径， 原料气体的液化温度低于原料气体的分解温度。

公开(公告)号：US20110203310A1

公开(公告)日：2011-08-25

申请号：US13057372

申请日：2009-08-04

申请人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Chiaki Yasumuro

发明人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Chiaki Yasumuro

IPC分类号： B01D53/14 ,  F25J1/02 ,  B01D47/00 ,  B01D53/78

CPC分类号： C23C16/4412 ,  B01D53/002 ,  B01D53/62 ,  B01D53/75 ,  B01D2257/706 ,  B01D2258/0216 ,  B01D2259/416 ,  C23C16/16 ,  Y02C20/30

摘要： A raw material recovery method for recovering a raw material of an organic metallic compound, which has the property of being stable toward a specific refrigerant without being decomposed thereby, from exhaust gas discharged from a treatment container in which a metallic thin film is formed on the surface of an object to be treated by using source gas obtained by vaporizing the raw material is characterized by being provided with a solidification step for solidifying the unreacted source gas by cooling the exhaust gas by bringing the exhaust gas into contact with the refrigerant and reprecipitating the raw material, and a recovery step for separating and recovering the raw material reprecipitated in the solidification step from the refrigerant. To provide a method for controlling an exhaust gas flow rate so that flow of gas in a processing chamber becomes uniform.

摘要翻译： 一种原料回收方法，用于从其中形成有金属薄膜的处理容器排出的废气中回收具有对特定制冷剂稳定的特性的有机金属化合物的原料， 通过使用通过蒸发原料获得的源气体处理的物体的表面的特征在于具有固化步骤，用于通过使废气与制冷剂接触而冷却排气来固化未反应的源气体，并再次沉淀 原料和用于分离和回收在固化步骤中从制冷剂中再沉淀的原料的回收步骤。 提供一种用于控制废气流量使得处理室中的气体流变得均匀的方法。

公开(公告)号：US08408025B2

公开(公告)日：2013-04-02

申请号：US13057372

申请日：2009-08-04

申请人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Chiaki Yasumuro

发明人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Chiaki Yasumuro

IPC分类号： F25J1/00 ,  F25J1/02 ,  C23C16/00 ,  B01D47/00 ,  B01J19/00

CPC分类号： C23C16/4412 ,  B01D53/002 ,  B01D53/62 ,  B01D53/75 ,  B01D2257/706 ,  B01D2258/0216 ,  B01D2259/416 ,  C23C16/16 ,  Y02C20/30

摘要： A raw material recovery method for recovering a raw material of an organic metallic compound, which has the property of being stable toward a specific refrigerant without being decomposed thereby, from exhaust gas discharged from a treatment container in which a metallic thin film is formed on the surface of an object to be treated by using source gas obtained by vaporizing the raw material is characterized by being provided with a solidification step for solidifying the unreacted source gas by cooling the exhaust gas by bringing the exhaust gas into contact with the refrigerant and reprecipitating the raw material, and a recovery step for separating and recovering the raw material reprecipitated in the solidification step from the refrigerant. To provide a method for controlling an exhaust gas flow rate so that flow of gas in a processing chamber becomes uniform.

摘要翻译： 一种原料回收方法，用于从其中形成有金属薄膜的处理容器排出的废气中回收具有对特定制冷剂稳定的特性的有机金属化合物的原料， 通过使用通过蒸发原料获得的源气体处理的物体的表面的特征在于具有固化步骤，用于通过使废气与制冷剂接触而冷却排气来固化未反应的源气体，并再次沉淀 原料和用于分离和回收在固化步骤中从制冷剂中再沉淀的原料的回收步骤。 提供一种用于控制废气流量使得处理室中的气体流变得均匀的方法。

公开(公告)号：US20110263123A1

公开(公告)日：2011-10-27

申请号：US13057380

申请日：2009-08-04

申请人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Satoshi Taga

发明人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Satoshi Taga

IPC分类号： H01L21/3205 ,  C23C16/458

CPC分类号： C23C16/52 ,  C23C16/16 ,  C23C16/45514 ,  C23C16/45521 ,  C23C16/45597 ,  C23C16/4585 ,  H01L21/67017 ,  H01L21/68785

摘要： Provided is a placing table structure which is disposed in a processing container and has a subject to be processed thereon so as to form a thin film on the subject in the processing container by using raw material gas which generates thermal decomposition reaction having reversibility. The placing table structure is provided with a placing table for placing the subject to be processed on a placing surface, i.e., an upper surface of the placing table structure, and a decomposition restraint gas supply means which is arranged in the placing table for the purpose of supplying decomposition restraint gas, which restraints thermal decomposition of the raw material gas, toward a peripheral section of the subject placed on the placing surface of the placing table.

摘要翻译： 提供了一种放置台结构，其设置在处理容器中并且要对其进行处理，以便通过使用产生具有可逆性的热分解反应的原料气体在处理容器中在被检体上形成薄膜。 放置台结构设置有用于将待处理对象放置在放置表面（即，放置台结构的上表面）的放置台和设置在放置台中的分解限制气体供应装置 提供限制原料气体的热分解的分解约束气体朝向放置在放置台的放置面的被处理体的周边部分。

公开(公告)号：US08399353B2

公开(公告)日：2013-03-19

申请号：US13081172

申请日：2011-04-06

申请人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Takara Kato ,  Osamu Yokoyama ,  Takashi Sakuma ,  Chiaki Yasumuro ,  Hiroyuki Toshima ,  Tatsuo Hatano ,  Yasushi Mizusawa ,  Masamichi Hara

发明人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Takara Kato ,  Osamu Yokoyama ,  Takashi Sakuma ,  Chiaki Yasumuro ,  Hiroyuki Toshima ,  Tatsuo Hatano ,  Yasushi Mizusawa ,  Masamichi Hara

IPC分类号： H01L21/768

CPC分类号： C23C16/16 ,  C23C14/024 ,  C23C14/025 ,  C23C14/046 ,  C23C14/165 ,  C23C14/345 ,  C23C14/568 ,  C23C14/5873 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/54 ,  C23C16/56 ,  C23C28/023 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76882 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding copper in the trench or hole by forming a Cu film on the Ru film using PVD while heating the substrate such that migration of copper into the trench or hole occurs.

摘要翻译： 提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。 该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并通过在加热衬底的同时在PVD膜上形成Cu膜，将铜包埋在沟槽或孔中，使得 发生铜进入沟槽或孔的迁移。

公开(公告)号：US08859422B2

公开(公告)日：2014-10-14

申请号：US13359138

申请日：2012-01-26

申请人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Takara Kato ,  Osamu Yokoyama ,  Takashi Sakuma ,  Chiaki Yasumuro ,  Hiroyuki Toshima ,  Tatsuo Hatano ,  Yasushi Mizusawa ,  Masamichi Hara ,  Kenzi Suzuki

发明人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Takara Kato ,  Osamu Yokoyama ,  Takashi Sakuma ,  Chiaki Yasumuro ,  Hiroyuki Toshima ,  Tatsuo Hatano ,  Yasushi Mizusawa ,  Masamichi Hara ,  Kenzi Suzuki

IPC分类号： H01L21/44

CPC分类号： H01L21/02104 ,  C23C14/025 ,  C23C14/046 ,  C23C14/345 ,  C23C14/541 ,  C23C14/5806 ,  C23C16/16 ,  H01J37/32899 ,  H01J37/34

摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.

摘要翻译： 提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。 该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并且通过在使衬底退火的同时在PVD膜上形成Cu膜而将Cu嵌入沟槽或孔中，使得 发生铜进入沟槽或孔的迁移。

公开(公告)号：US20110300291A1

公开(公告)日：2011-12-08

申请号：US13158180

申请日：2011-06-10

申请人： Masamichi Hara ,  Yasushi Mizusawa ,  Satoshi Taga ,  Atsushi Gomi ,  Tatsuo Hatano

发明人： Masamichi Hara ,  Yasushi Mizusawa ,  Satoshi Taga ,  Atsushi Gomi ,  Tatsuo Hatano

IPC分类号： H05K3/42

CPC分类号： C23C16/45559 ,  C23C16/16 ,  H01L21/28562

摘要： Disclosed is a method for film formation, characterized by comprising allowing a treatment gas stream containing a metal carbonyl-containing treatment gas and a carbon monoxide-containing carrier gas to flow into a region on the upper outside of the outer periphery of a substrate to be treated in a diameter direction of the substrate while avoiding the surface of the substrate and diffusing the metal carbonyl from the treatment gas stream into the surface of the substrate to form a metal film on the surface of the substrate.

摘要翻译： 本发明公开了一种成膜方法，其特征在于，含有含有含羰基金属的处理气体和一氧化碳的载气的处理气体流进入基板的外周的上侧的区域内，为 在衬底的直径方向处理，同时避免衬底的表面并将金属羰基从处理气流扩散到衬底的表面中，以在衬底的表面上形成金属膜。

公开(公告)号：US20110092070A1

公开(公告)日：2011-04-21

申请号：US12933979

申请日：2009-01-23

申请人： Masamichi Hara ,  Yasushi Mizusawa ,  Satoshi Taga ,  Atsushi Gomi ,  Tatsuo Hatano

发明人： Masamichi Hara ,  Yasushi Mizusawa ,  Satoshi Taga ,  Atsushi Gomi ,  Tatsuo Hatano

IPC分类号： H01L21/3205 ,  C23C16/16

CPC分类号： C23C16/45559 ,  C23C16/16 ,  H01L21/28562

摘要： Disclosed is a method for film formation, characterized by comprising allowing a treatment gas stream containing a metal carbonyl-containing treatment gas and a carbon monoxide-containing carrier gas to flow into a region on the upper outside of the outer periphery of a substrate to be treated in a diameter direction of the substrate while avoiding the surface of the substrate and diffusing the metal carbonyl from the treatment gas stream into the surface of the substrate to form a metal film on the surface of the substrate.

摘要翻译： 本发明公开了一种成膜方法，其特征在于，含有含有含羰基金属的处理气体和一氧化碳的载气的处理气体流进入基板的外周的上侧的区域内，为 在衬底的直径方向处理，同时避免衬底的表面并将金属羰基从处理气流扩散到衬底的表面中，以在衬底的表面上形成金属膜。

公开(公告)号：US09062374B2

公开(公告)日：2015-06-23

申请号：US12933979

申请日：2009-01-23

申请人： Masamichi Hara ,  Yasushi Mizusawa ,  Satoshi Taga ,  Atsushi Gomi ,  Tatsuo Hatano

发明人： Masamichi Hara ,  Yasushi Mizusawa ,  Satoshi Taga ,  Atsushi Gomi ,  Tatsuo Hatano

IPC分类号： C23C16/16 ,  C23C16/455 ,  H01L21/285

CPC分类号： C23C16/45559 ,  C23C16/16 ,  H01L21/28562

摘要： Disclosed is a method for film formation, comprising allowing a treatment gas stream containing a metal carbonyl-containing treatment gas and a carbon monoxide-containing carrier gas to flow into a region on the upper outside of the outer periphery of a substrate to be treated in a diameter direction of the substrate while avoiding the surface of the substrate and diffusing the metal carbonyl from the treatment gas stream into the surface of the substrate to form a metal film on the surface of the substrate.

摘要翻译： 公开了一种成膜方法，包括使含有含羰基金属的处理气体和含一氧化碳的载气的处理气流流入待处理的基板的外周的上侧的区域 衬底的直径方向，同时避免衬底的表面并将金属羰基从处理气流扩散到衬底的表面中，以在衬底的表面上形成金属膜。