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35 条记录 (耗时 0.035 秒)

    Metal-Polishing Liquid And Polishing Method Using The Same
    22.
    发明申请
    Metal-Polishing Liquid And Polishing Method Using The Same 审中-公开
    金属抛光液和抛光方法

    公开(公告)号：US20070196975A1

    公开(公告)日：2007-08-23

    申请号：US11578181

    申请日：2005-04-12

    申请人： Yutaka Nomura ,  Hiroki Terazaki ,  Hiroshi Ono ,  Yasuo Kamigata

    发明人： Yutaka Nomura ,  Hiroki Terazaki ,  Hiroshi Ono ,  Yasuo Kamigata

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/3212 ,  C09G1/02

    摘要： The present invention provides a metal-polishing liquid, comprising polishing particles and a chemical component, wherein the polishing particles have charges of surface potential of the same polarity as the charges of surface potential on the reaction layer, adsorption layer or the mixed layer thereof formed by the chemical component on a metal to be polished with the metal-polishing liquid, and a polishing method using the same, that enable to give highly flattened surface at high Cu-polishing speed and enable reduction of the number of the polishing particles remaining on the polished face after polishing.

    摘要翻译： 本发明提供了一种金属抛光液，其包括抛光颗粒和化学成分，其中抛光颗粒具有与反应层，吸附层或其混合层上的表面电位的电荷相同极性的电荷电荷 通过金属抛光液体抛光的金属上的化学成分和使用该金属抛光液的抛光方法，能够在高Cu抛光速度下赋予高度平坦的表面，并且能够减少残留在其上的抛光颗粒的数量 抛光后的抛光面。

    Polishing fluid and method of polishing
    23.
    发明申请
    Polishing fluid and method of polishing 有权
    抛光液和抛光方法

    公开(公告)号：US20050173669A1

    公开(公告)日：2005-08-11

    申请号：US10517049

    申请日：2003-05-29

    申请人： Yasushi Kurata ,  Yasuo Kamigata ,  Sou Anzai ,  Hiroki Terazaki

    发明人： Yasushi Kurata ,  Yasuo Kamigata ,  Sou Anzai ,  Hiroki Terazaki

    IPC分类号： B24B37/00 ,  C09G1/02 ,  H01L21/321 ,  H01L21/768 ,  B24D18/00 ,  C09K13/00

    CPC分类号： C09G1/02 ,  H01L21/3212

    摘要： A polishing slurry comprises a metal-oxidizing agent, a metal anticorrosive agent, an oxidized metal dissolving agent and water. The oxidized metal dissolving agent is at least one kind selected from the group consisting of an acid in which the dissociation constant (pKa) of a first dissociable acid group is 3.5 or more, an ammonium salt of the acid and an organic acid ester of the acid. The pH of the polishing slurry is within the range of 3 to 4. The concentration of the metal-oxidizing agent is within the range of 0.01 to 3 percent by weight. In the wiring-formation process of the semiconductor device, the conductor used for the barrier layer can be polished at a high polishing rate by using the polishing slurry having the low polishing particle concentration and the low metal anticorrosive agent concentration.

    摘要翻译： 抛光浆料包含金属氧化剂，金属防腐蚀剂，氧化金属溶解剂和水。 所述氧化金属溶解剂为选自第一解离酸基的解离常数（pKa）为3.5以上的酸，酸的铵盐和所述酸的有机酸酯中的至少一种 酸。 研磨浆的pH在3〜4的范围内。金属氧化剂的浓度为0.01〜3重量％。 在半导体装置的布线形成工序中，通过使用抛光粒子浓度低，金属防腐蚀剂浓度低的研磨浆，能够以高抛光速度对阻挡层使用的导体进行研磨。

    POLISHING SLURRY FOR CMP
    28.
    发明申请
    POLISHING SLURRY FOR CMP 审中-公开
    CMP抛光浆

    公开(公告)号：US20110027994A1

    公开(公告)日：2011-02-03

    申请号：US12900926

    申请日：2010-10-08

    申请人： Katsumi Mabuchi ,  Haruo Akahoshi ,  Yasuo Kamigata ,  Masanobu Habiro ,  Hiroshi Ono

    发明人： Katsumi Mabuchi ,  Haruo Akahoshi ,  Yasuo Kamigata ,  Masanobu Habiro ,  Hiroshi Ono

    IPC分类号： H01L21/306

    CPC分类号： H01L21/3212 ,  C09G1/02

    摘要： A polishing liquid for CMP has a composition loaded with, for example, an inorganic salt, a protective film forming agent and a surfactant capable of imparting a dissolution accelerating activity to enlarge a difference between polishing speed under non-load and polishing speed under load. By virtue of this polishing liquid for CMP, there can be simultaneously accomplished a speed increase for increasing CMP productivity, and wiring planarization for miniaturization and multilayer formation of wiring.

    摘要翻译： 用于CMP的抛光液具有负载有例如无机盐，保护膜形成剂和能够赋予溶解促进活性的表面活性剂的组合物，以增加负载下的抛光速度和负载下的抛光速度之间的差异。 由于该CMP用抛光液，可以同时实现提高CMP生产率的速度增加，以及用于小型化和布线的多层形成的布线平面化。

    Polishing fluid and method of polishing
    29.
    发明授权
    Polishing fluid and method of polishing 有权
    抛光液和抛光方法

    公开(公告)号：US07799688B2

    公开(公告)日：2010-09-21

    申请号：US10517049

    申请日：2003-05-29

    申请人： Yasushi Kurata ,  Yasuo Kamigata ,  Sou Anzai ,  Hiroki Terazaki

    发明人： Yasushi Kurata ,  Yasuo Kamigata ,  Sou Anzai ,  Hiroki Terazaki

    IPC分类号： H01L21/302

    CPC分类号： C09G1/02 ,  H01L21/3212

    摘要： A polishing slurry comprises a metal-oxidizing agent, a metal anticorrosive agent, an oxidized metal dissolving agent and water. The oxidized metal dissolving agent is at least one kind selected from the group consisting of an acid in which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.5 or more, an ammonium salt of the acid and an organic acid ester of the acid. The pH of the polishing slurry is within the range of 3 to 4. The concentration of the metal-oxidizing agent is within the range of 0.01 to 3 percent by weight. In the wiring-formation process of the semiconductor device, the conductor used for the barrier layer can be polished at a high polishing rate by using the polishing slurry having the low polishing particle concentration and the low metal anticorrosive agent concentration.

    摘要翻译： 抛光浆料包含金属氧化剂，金属防腐蚀剂，氧化金属溶解剂和水。 所述氧化金属溶解剂为选自由第一解离酸基的解离常数K a（p K a）的对数的负值为3.5以上的酸，所述酸的铵盐 酸和酸的有机酸酯。 研磨浆的pH在3〜4的范围内。金属氧化剂的浓度为0.01〜3重量％。 在半导体装置的布线形成工序中，通过使用抛光粒子浓度低，金属防腐蚀剂浓度低的研磨浆，能够以高抛光速度对阻挡层使用的导体进行研磨。