公开(公告)号：US07259104B2

公开(公告)日：2007-08-21

申请号：US10671608

申请日：2003-09-29

申请人： Tetsuo Ono ,  Takafumi Tokunaga ,  Tadashi Umezawa ,  Motohiko Yoshigai ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takashi Sato ,  Yasushi Goto

发明人： Tetsuo Ono ,  Takafumi Tokunaga ,  Tadashi Umezawa ,  Motohiko Yoshigai ,  Tatsumi Mizutani ,  Tokuo Kure ,  Masayuki Kojima ,  Takashi Sato ,  Yasushi Goto

IPC分类号： H01L21/302 ,  B44C1/22

CPC分类号： H01J37/32082 ,  H01L21/32136 ,  H01L21/32139

摘要： A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of installing the sample on a sample board in a vacuum container, generating a plasma that consists of a mixture of halogen gas and adhesive gas inside the vacuum container, applying a radio frequency bias voltage having a frequency ranging from 200 kHz to 20 MHz on the sample board, and controlling a periodic on-off of the radio frequency bias voltage with an on-off control frequency ranging from 100 Hz to 10 kHz.

摘要翻译： 具有在被处理物质上形成的不含有碳作为主要成分的掩模层的样品的表面处理方法，该物质是沉积在硅基板上的金属，半导体和绝缘体，该物质包括如下步骤： 在真空容器中的样品板上，在真空容器内产生由卤素气体和粘合气体的混合物构成的等离子体，在样品板上施加频率范围为200kHz〜20MHz的射频偏置电压， 以从100Hz到10kHz的开关控制频率来控制射频偏置电压的周期性的断开。

公开(公告)号：US06972848B2

公开(公告)日：2005-12-06

申请号：US10377823

申请日：2003-03-04

申请人： Tatehito Usui ,  Motohiko Yoshigai ,  Kazuhiro Jyouo ,  Tetsuo Ono

发明人： Tatehito Usui ,  Motohiko Yoshigai ,  Kazuhiro Jyouo ,  Tetsuo Ono

IPC分类号： G01B9/02 ,  G01R31/26 ,  H01J37/32

CPC分类号： H01J37/32935 ,  H01L21/67069 ,  H01L21/67253

摘要： When a semiconductor wafer placed in a chamber and having films thereon is etched using plasma generated in the chamber, a change in the amount of lights with at least two wavelengths, obtained from the wafer surface during the processing, is detected. The time between the time at which the amount of a light with one of two wavelengths is maximized and the time at which the amount of a light with the other wavelength is minimized is compared with a predetermined value to determine the state of etching processing.

摘要翻译： 当使用在室中产生的等离子体来刻蚀放置在腔室中并且具有膜上的膜的半导体晶片时，检测在处理期间从晶片表面获得的具有至少两个波长的光量的变化。 将具有两个波长中的一个的光量的时间最大化的时间与其他波长的光量最小化的时间与预定值进行比较，以确定蚀刻处理的状态。

公开(公告)号：US06967109B2

公开(公告)日：2005-11-22

申请号：US10880501

申请日：2004-07-01

申请人： Tatehito Usui ,  Tetsuo Ono ,  Ryoji Nishio ,  Kazue Takahashi ,  Nobuyuki Mise

发明人： Tatehito Usui ,  Tetsuo Ono ,  Ryoji Nishio ,  Kazue Takahashi ,  Nobuyuki Mise

IPC分类号： H01L21/66 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32 ,  H01L23/544 ,  H01L21/302

CPC分类号： H01L22/34 ,  C23C16/50 ,  C23C16/52 ,  G01N21/73 ,  H01J37/32935 ,  H01L21/67253 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and apparatus for measuring a potential difference for plasma processing with a plasma processing apparatus that processes a sample by introducing a gas into a vacuum chamber and generates plasma. A light-emitting portion is formed on a measurement-use sample of the sample to be processed and a current flows into the light-emitting portion according to a potential difference that has been generated across the light-emitting portion. An intensity of light emitted from the light-emitting portion according to a predetermined light intensity is measured and a potential difference on the measurement-use sample according to a predetermined light intensity is measured.

摘要翻译： 一种用等离子体处理装置测量等离子体处理的电位差的方法和装置，其通过将气体引入真空室并产生等离子体来处理样品。 在待处理样品的测量用样品上形成发光部分，并且电流根据在发光部分两端产生的电位差而流入发光部分。 测量根据预定光强度从发光部分发射的光的强度，并且测量根据预定光强度的测量用样品上的电位差。

公开(公告)号：US20050133162A1

公开(公告)日：2005-06-23

申请号：US10784275

申请日：2004-02-24

申请人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

发明人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

IPC分类号： H01L21/3065 ,  C23F4/00 ,  H01J37/32 ,  C23F1/00

CPC分类号： H01J37/32477 ,  C23F4/00

摘要： A plasma processing apparatus having 90% or more of a side wall of an inner wall 101 of a reaction chamber 1 covered with a dielectric 102, and equipped with an earthed conductive member 21a having an area of less than 10% of the side wall area of the inner wall 101 and having a structure to allow direct current from a plasma to flow therein, wherein the DC earth formed of the conductive member 21 is located at a position where floating potential of plasma (or plasma density) is higher than the floating potential of plasma 9 located near a wafer holding electrode 14 where there is relatively large wall chipping.

摘要翻译： 一种等离子体处理装置，其具有覆盖有电介质102的反应室1的内壁101的侧壁的90％以上，并具有面积小于侧壁的10％的接地导电部件21a 内壁101的区域，具有允许来自等离子体的直流电流流过的结构，其中由导电构件21形成的直流接地位于等离子体（或等离子体密度）的浮动电位高于 位于晶片保持电极14附近的等离子体9的浮动电位，其中存在相对较大的壁切屑。

公开(公告)号：US20050072444A1

公开(公告)日：2005-04-07

申请号：US10791856

申请日：2004-03-04

申请人： Shigeru Shirayone ,  Tetsuo Ono ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Takahiro Abe ,  Takahiro Shimomura ,  Hiroyuki Kitsunai

发明人： Shigeru Shirayone ,  Tetsuo Ono ,  Naoshi Itabashi ,  Motohiko Yoshigai ,  Takahiro Abe ,  Takahiro Shimomura ,  Hiroyuki Kitsunai

IPC分类号： B08B7/00 ,  H01L21/3213 ,  B08B3/12

CPC分类号： H01J37/32082 ,  B08B7/0035 ,  H01J2237/334 ,  H01L21/32136

摘要： A method for processing a plasma processing apparatus having plasma generating means 3, 8, 10, 13 through 15 for generating plasma within a processing chamber, a high-frequency power applying means 18 for applying high-frequency power to an object 17 to be processed, a processing chamber 1 to which an evacuating device 7 is connected and capable of having its interior evacuated, and a gas supply device (not shown) for the processing chamber, wherein the method comprises mounting a Si wafer 17 on an electrode 4 for holding the object to be processed, introducing hydrobromic gas and chlorine gas into the processing chamber and generating plasma, and removing the aluminum-based deposit adhered to the interior of the processing chamber.

摘要翻译： 一种用于处理具有用于在处理室内产生等离子体的等离子体产生装置3,8,10,13至15的等离子体处理装置的方法，用于向要处理的物体17施加高频电力的高频电力施加装置18 ，排气装置7连接并能够将其内部抽真空的处理室1和用于处理室的气体供给装置（未示出），其中该方法包括将Si晶片17安装在用于保持的电极4上 要处理的物体，将氢溴酸气体和氯气引入处理室并产生等离子体，以及去除附着在处理室内部的铝基沉积物。

公开(公告)号：US06849191B2

公开(公告)日：2005-02-01

申请号：US09249292

申请日：1999-02-12

申请人： Tetsuo Ono ,  Tatsumi Mizutani ,  Ryouji Hamasaki ,  Tokuo Kure ,  Takafumi Tokunaga ,  Masayuki Kojima

发明人： Tetsuo Ono ,  Tatsumi Mizutani ,  Ryouji Hamasaki ,  Tokuo Kure ,  Takafumi Tokunaga ,  Masayuki Kojima

IPC分类号： C23F4/00 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01J37/32137 ,  C23F4/00 ,  H01J37/32706 ,  H01L21/32137

摘要： According to the present invention, there is provided a sample surface treating apparatus for processing a fine pattern by plasma etching, including a stage provided in a chamber, on which a sample to be subjected to a surface treatment is placed; etching gas supply source for continuously supplying an etching gas for plasma generation into the chamber; a plasma generator for generating a high-density plasma in the chamber; a bias power supply for applying a bias voltage of 100 kHz or higher to the stage independently of the plasma generation; and a pulse modulator for modulating the bias power supply at a frequency of 100 Hz to 10 kHz, wherein a surface treatment in which the minimum feature size is 1 μm or smaller is performed on the sample placed on the stage.

摘要翻译： 根据本发明，提供了一种用于通过等离子体蚀刻处理精细图案的样品表面处理装置，包括设置在其中放置待进行表面处理的样品的室中的台阶; 蚀刻气体供给源，用于将用于等离子体产生的蚀刻气体连续地供应到所述室中; 用于在所述室中产生高密度等离子体的等离子体发生器; 偏置电源，用于独立于等离子体产生而向所述载台施加100kHz或更高的偏置电压; 以及用于以100Hz至10kHz的频率调制偏置电源的脉冲调制器，其中对放置在载物台上的样品执行最小特征尺寸为1um或更小的表面处理。

公开(公告)号：US06488722B1

公开(公告)日：2002-12-03

申请号：US09568268

申请日：2000-05-10

申请人： Tetsuo Ono

发明人： Tetsuo Ono

IPC分类号： C10L132

CPC分类号： C10L1/326

摘要： The present invention relates to high-density coal-water mixed fuel and a producing method thereof and aims to reduce an amount of dispersant to be used in the coal-water mixed fuel having the good fluidity with the increased density and obtain the a coal-water mixed fuel from pulverized coals produced by dry milling at low cost. According to this invention, in case of obtaining the high-density coal-water mixed fuel such as a CWM by mixing the pulverized coals ground to provide a predetermined particle size distribution, water and the dispersant, the hydrophilic colloid which causes the protective effect with respect to the pulverized coals is added and mixed preferably before adding the dispersant so that the high-density coal-water mixed fuel which includes the hydrophilic colloid and a reduced amount of a surface active agent used can be provided. An amount of the hydrophilic colloid to be added is less than 1 wt % of the entire CWM and larger than an amount for causing reciprocal aggregation with the pulverized coals, or more preferably it is in the order from ppm to ppt. Further, when the pulverized coals are rubbed together and the angles thereof are shaved off for production from the pulverized coals, the pulverized coals are spheroidized without extremely being minimized from their original particle size, and superfine particles in the coal particles are generated, thereby enabling adjustment to provide a preferable particle size distribution as the CWM.

摘要翻译： 本发明涉及高密度煤​​ - 水混合燃料及其制造方法，其目的在于减少在密度较高的流动性良好的煤 - 水混合燃料中使用的分散剂用量， 以低成本通过干磨生产的粉煤的水混合燃料。 根据本发明，在通过混合粉碎煤以提供预定的粒度分布的水和分散剂来获得诸如CWM的高密度煤 - 水混合燃料的情况下，引起保护作用的亲水胶体 相对于粉煤，加入分散剂之前，优选加入混合物，从而可以提供包含亲水胶体的高密度煤水混合燃料和减少用量的表面活性剂。 所添加的亲水性胶体的量小于整个CWM的1重量％，并且大于与粉煤共同聚集的量，更优选为从ppm到ppt的顺序。 此外，当粉碎的煤被摩擦在一起并且其角度被刮掉以从粉碎的煤产生时，粉碎的煤被球化，而不会从它们的原始粒度极小化，并且产生煤颗粒中的超细颗粒，从而使得 调整以提供优选的粒度分布作为CWM。

公开(公告)号：US5505778A

公开(公告)日：1996-04-09

申请号：US730078

申请日：1991-07-15

申请人： Tetsuo Ono ,  Susumu Hiraoka ,  Sakae Saito ,  Kunio Harada ,  Mituhiro Tachibana ,  Shigeo Kubota ,  Keizo Suzuki

发明人： Tetsuo Ono ,  Susumu Hiraoka ,  Sakae Saito ,  Kunio Harada ,  Mituhiro Tachibana ,  Shigeo Kubota ,  Keizo Suzuki

IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/54

CPC分类号： C23C16/452 ,  C23C16/4557 ,  Y10S438/974

摘要： An apparatus for treating solid surface using a thermally excited molecular beam according to the present invention is capable of completely preventing flying of contaminant caused by a heating source to a sample. To achieve this, in the present invention, the heating source for exciting the molecules is hermetically separated from the sample. Alternatively, a container where the heating source is housed and a container where the sample is accommodated are separated such that a conductance between the two containers is sufficiently small. In this way, chemical reactions between the molecular beam of the reactive gas which is highly reactive and the heating source heated to high temperatures can be eliminated, and flying of the contaminant to the sample can thus be greatly reduced. As a result, flying of the contaminating substances caused by the heating source to the sample can be prevented, and reduction in the surface treating rate of the sample, caused by the contaminant, can be prevented.

摘要翻译： 根据本发明的使用热激发分子束处理固体表面的设备能够完全防止由加热源引起的污染物飞溅到样品。 为了实现这一点，在本发明中，用于激发分子的加热源与样品气密分离。 或者，容纳加热源的容器和容纳样品的容器被分离，使得两个容器之间的电导足够小。 以这种方式，可以消除高反应性的反应性气体的分子束与加热到高温的加热源之间的化学反应，从而大大减少污染物向样品的飞散。 结果，可以防止由加热源引起的对样品的污染物质的飞溅，并且可以防止由污染物引起的样品表面处理速度的降低。

公开(公告)号：US08440513B2

公开(公告)日：2013-05-14

申请号：US12198222

申请日：2008-08-26

申请人： Tetsuo Ono ,  Go Saito

发明人： Tetsuo Ono ,  Go Saito

IPC分类号： H01L21/302 ,  H01L21/3065

CPC分类号： H01L21/31138 ,  H01L21/02071 ,  H01L21/28123 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517

摘要： In a semiconductor that has a structure in which a work function controlling metal conductor is provided on a high dielectric insulation film, fine processing is performed without deteriorating a device. In a method of semiconductor processing, in which the semiconductor has an insulation film containing Hf or Zr formed on a semiconductor substrate and a conductor film containing Ti or Ta or Ru formed on an insulation film, and the conductor film is processed by using a resist formed on the conductor film under a plasma atmosphere, the resist is removed under the plasma atmosphere of gas that contains hydrogen and does not contain oxygen.

摘要翻译： 在具有在高介电绝缘膜上设置功函数控制金属导体的结构的半导体中，进行精细处理而不会使器件恶化。 在半导体处理方法中，其中半导体具有包含在半导体衬底上形成的Hf或Zr的绝缘膜和在绝缘膜上形成的含有Ti或Ta或Ru的导体膜，并且通过使用抗蚀剂来处理导体膜 在等离子体气氛下在导体膜上形成，在含氢气体的等离子体气氛下除去抗蚀剂，不含氧。

公开(公告)号：US07771607B2

公开(公告)日：2010-08-10

申请号：US11696280

申请日：2007-04-04

申请人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

发明人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

IPC分类号： H01L21/306 ,  C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32477 ,  C23F4/00

摘要： A plasma processing method for processing a substrate with plasma by applying a high frequency to a reaction chamber, and applying a second high frequency to a substrate holder includes covering at least 90% of a total surface area of an inner wall of the reaction chamber that is directly exposed to plasma with a dielectric, disposing a DC earth comprising a conductive portion that is earthed and having an area less than 10% of the inner wall of the reaction chamber, and performing plasma processing to the substrate in the reaction chamber having the DC earth located at a position where a floating potential of plasma is higher than the floating potential of plasma at the inner wall of the reaction chamber that is closest to the substrate.

摘要翻译： 一种等离子体处理方法，用于通过向反应室施加高频处理具有等离子体的衬底，以及向衬底保持器施加第二高频包括覆盖反应室内壁的总表面积的至少90％，其中， 直接暴露于具有电介质的等离子体，设置包括接地的导电部分并且具有小于反应室的内壁的10％的面积的DC地球，并且对具有所述反应室的反应室中的衬底进行等离子体处理 位于位于反应室最靠近衬底的内壁处的等离子体的浮置电位高于等离子体的浮动电位的位置。