公开(公告)号：US06787692B2

公开(公告)日：2004-09-07

申请号：US09984905

申请日：2001-10-31

申请人： Kenji Wada ,  Yoshiyuki Nasuno ,  Michio Kondo ,  Akihisa Matsuda

发明人： Kenji Wada ,  Yoshiyuki Nasuno ,  Michio Kondo ,  Akihisa Matsuda

IPC分类号： H01L31052

CPC分类号： H01L31/076 ,  H01L31/02366 ,  H01L31/056 ,  H01L31/077 ,  H01L31/182 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521 ,  Y10T428/26

摘要： A solar cell substrate has irregularities on a surface which is in contact with a photo-electric conversion layer, and light is incident on the side of the irregularities. The height of the irregularities is set so that the root mean square height is in a range of 15 nm to 600 nm, and tan &thgr; is in a range of 0.10 to 0.30, where &thgr; is the angle of incline of the surface of the irregularities with respect to an average line of the irregularities. Light incident on the irregularities is scattered at the interface. This increases the optical path length and thus the quantity of light absorbed in the photo-electric conversion layer, resulting in improved efficiency. Additionally, the photo-electric conversion layer can be made thinner reducing deposit time and manufacturing cost. Further, collision of crystals is not incurred, thus preventing deterioration of photo-electric conversion efficiency which is caused by defects.

摘要翻译： 太阳能电池基板在与光电转换层接触的表面上具有不规则性，并且光入射到不规则部分的一侧。 凹凸的高度被设定为使得均方根高度在15nm至600nm的范围内，并且tanθ在0.10至0.30的范围内，其中θ是不规则部分的表面的倾斜角 相对于平均线的违规行为。 光线不规则的事件分散在界面处。 这增加了光路长度，从而增加了光电转换层中吸收的光量，从而提高了效率。 另外，可以使光电转换层更薄，减少沉积时间和制造成本。 此外，不会发生晶体碰撞，从而防止由缺陷引起的光电转换效率的劣化。

公开(公告)号：US08957300B2

公开(公告)日：2015-02-17

申请号：US10587541

申请日：2005-01-07

申请人： Yoshiyuki Nasuno ,  Noriyoshi Kohama ,  Kazuhito Nishimura ,  Takashi Hayakawa

发明人： Yoshiyuki Nasuno ,  Noriyoshi Kohama ,  Kazuhito Nishimura ,  Takashi Hayakawa

IPC分类号： H01L25/00 ,  H01L31/0236 ,  H01L31/0224 ,  H01L31/076 ,  H01L31/18

CPC分类号： H01L31/0236 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/076 ,  H01L31/1884 ,  Y02E10/548

摘要： A substrate 1 for a photoelectric conversion device includes a first transparent conductive layer 5 formed on at least a part of the surface region of a transparent substrate 3, the first transparent conductive layer 5 having at least an opening portion 7 exposing the substrate 3.

摘要翻译： 用于光电转换装置的基板1包括形成在透明基板3的表面区域的至少一部分上的第一透明导电层5，第一透明导电层5至少具有暴露基板3的开口部分7。

公开(公告)号：US20130224937A1

公开(公告)日：2013-08-29

申请号：US13883655

申请日：2011-11-04

申请人： Hiroki Tanimura ,  Yoshiyuki Nasuno ,  Kuriyo Shimada

发明人： Hiroki Tanimura ,  Yoshiyuki Nasuno ,  Kuriyo Shimada

IPC分类号： H01L21/02

CPC分类号： H01L21/0262 ,  C23C16/24 ,  C23C16/515 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696 ,  H01L31/076 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： Semiconductor layer forming gas is introduced into a reaction chamber, and the gas generates a plasma discharge, so that a semiconductor layer is formed. In addition to the gas, impurity gas is introduced into the chamber, and first conductivity type layer forming gas including the semiconductor layer forming gas and the impurity gas generates a plasma discharge, so that a first conductivity type layer of a first conductivity type is formed so as to cover the semiconductor layer. In the step of forming the first conductivity type layer, a composition set value of gas supplied to the chamber is shifted from a composition of the semiconductor layer forming gas to a composition of the first conductivity type layer forming gas in a state where a pressure in the chamber is not reduced to ultimate vacuum even after a plasma discharge processing for forming the semiconductor layer is terminated.

摘要翻译： 半导体层形成气体被引入到反应室中，并且气体产生等离子体放电，从而形成半导体层。 除了气体之外，杂质气体被引入到腔室中，并且包括半导体层形成气体和杂质气体的第一导电型层形成气体产生等离子体放电，从而形成第一导电类型的第一导电型层 以覆盖半导体层。 在形成第一导电类型层的步骤中，将供给到室的气体的组成设定值从半导体层形成气体的组成转变为第一导电型层形成气体的组成， 即使在用于形成半导体层的等离子体放电处理终止之后，室也不会减小到极限真空。

公开(公告)号：US20130000721A1

公开(公告)日：2013-01-03

申请号：US13634971

申请日：2010-03-31

申请人： Yoshiyuki Nasuno ,  Kazuhito Nishimura ,  Hiroki Tanimura ,  Kei Kajihara

发明人： Yoshiyuki Nasuno ,  Kazuhito Nishimura ,  Hiroki Tanimura ,  Kei Kajihara

IPC分类号： H01L31/0236 ,  H01L31/18

CPC分类号： H01L31/02366 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/03925 ,  Y02E10/541 ,  Y02P70/521

摘要： A photoelectric conversion device includes a substrate and a transparent, electrically conductive film covering at least a portion of a major surface of the substrate and having an irregular geometry on a surface thereof closer to a semiconductor layer. Furthermore, the photoelectric conversion device includes a first conduction type semiconductor layer covering at least a portion of the irregular geometry of the transparent, electrically conductive film, and a light absorption layer covering the first conduction type semiconductor layer. The irregular geometry has a bump having a maximum height equal to or larger than 50 nm and equal to or smaller than 1200 nm. The bump has a surface having a submicron recess having local peaks having a spacing equal to or larger than 2 nm and equal to or smaller than 25 nm.

摘要翻译： 光电转换装置包括基板和覆盖基板的主表面的至少一部分并且在其更靠近半导体层的表面上具有不规则几何形状的透明导电膜。 此外，光电转换装置包括覆盖透明导电膜的不规则几何形状的至少一部分的第一导电型半导体层和覆盖第一导电型半导体层的光吸收层。 不规则几何形状具有最大高度等于或大于50nm且等于或小于1200nm的凸块。 凸块具有具有亚微米凹部的表面，其具有等于或大于2nm且等于或小于25nm的间隔的局部峰。

公开(公告)号：US08258596B2

公开(公告)日：2012-09-04

申请号：US12523633

申请日：2007-11-15

申请人： Yoshiyuki Nasuno ,  Noriyoshi Kohama ,  Takanori Nakano

发明人： Yoshiyuki Nasuno ,  Noriyoshi Kohama ,  Takanori Nakano

IPC分类号： H01L31/103 ,  H01L21/329

CPC分类号： H01L31/0236 ,  H01L31/022425 ,  H01L31/02366 ,  H01L31/076 ,  Y02E10/548

摘要： To provide a stacked photoelectric conversion device and a method for producing the same, in which an interlayer is provided between photoelectric conversion layers to obtain an effect of controlling the amount of incidence light, and carrier recombination at an interface between the interlayer and a semiconductor layer is decreased to enhance photoelectric conversion efficiency.The stacked photoelectric conversion device of the present invention comprises a plurality of silicon-based photoelectric conversion layers having a p-i-n structure stacked, wherein at least a pair of adjacent photoelectric conversion layers have an interlayer of a silicon nitride therebetween, the pair of the photoelectric conversion layers are electrically connected with each other, and a p-type silicon-based semiconductor layer constituting a part of the photoelectric conversion layer and contacting the interlayer contains a nitrogen atom.

摘要翻译： 为了提供层叠光电转换装置及其制造方法，其中在光电转换层之间设置中间层以获得控制入射光的效果，以及在中间层和半导体层之间的界面处的载流子复合 降低增强光电转换效率。 本发明的层叠型光电转换元件具有层叠有pin结构的多个硅系光电转换层，其中至少一对相邻的光电转换层之间具有氮化硅中间层，该一对光电转换 层彼此电连接，并且构成光电转换层的一部分并与中间层接触的p型硅基半导体层包含氮原子。

公开(公告)号：US20110265846A1

公开(公告)日：2011-11-03

申请号：US13144051

申请日：2010-01-04

申请人： Yoshiyuki Nasuno ,  Takanori Nakano ,  Akira Shimizu

发明人： Yoshiyuki Nasuno ,  Takanori Nakano ,  Akira Shimizu

IPC分类号： H01L31/05 ,  H01L31/042

CPC分类号： H01L31/042 ,  H01L31/0201 ,  H01L31/0463 ,  H01L31/075 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： The thin-film solar cell module according to the present invention has a substrate and a cell module that includes three or more cell strings, each of which has a constant width, and is characterized in that each cell string has a plurality of solar cells which are connected in series, the cell strings are provided on the substrate so as to be aligned in a direction perpendicular to a direction in which the solar cells are connected in series and connected to each other in parallel, the solar cells each have a front surface electrode, a photoelectric conversion layer and a rear surface electrode stacked in this order, the cell strings have contact lines which electrically connect the front surface electrode of one of neighboring solar cells of the solar cells and the rear surface electrode of the other, the solar cells being included in the cell string, and have the same width as the cell string, and at least one of the cell strings at the two ends of the above described three or more cell strings has a width greater than the other cell strings.

摘要翻译： 根据本发明的薄膜太阳能电池模块具有包括三个或更多个具有恒定宽度的单元串的基板和单元模块，其特征在于每个单元串具有多个太阳能电池， 电池串被设置在基板上，以便在与太阳能电池串联连接的方向垂直的方向上对准，并联连接，太阳能电池各自具有前表面 电极，光电转换层和背面电极，电池串具有将太阳能电池的一个相邻的太阳能电池的前表面电极与另一个的背面电极电连接的接触线，太阳能电池 细胞被包含在细胞串中，并且具有与细胞串相同的宽度，并且上述三个或更多个的两端的细胞串中的至少一个 单元格字符串的宽度大于其他单元格字符串。

公开(公告)号：US07915612B2

公开(公告)日：2011-03-29

申请号：US11970043

申请日：2008-01-07

申请人： Yoshiyuki Nasuno ,  Yasuaki Ishikawa ,  Takanori Nakano

发明人： Yoshiyuki Nasuno ,  Yasuaki Ishikawa ,  Takanori Nakano

IPC分类号： H01L31/061

CPC分类号： H01L31/075 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains n-type impurities in a concentration of 1.0×1016 to 2.0×1017 cm−3.

摘要翻译： 光电转换装置包括依次堆叠的由硅基半导体制成的p型层，i型层和n型层，其中i型层含有浓度为 1.0×1016〜2.0×1017cm-3。

公开(公告)号：US20100180925A1

公开(公告)日：2010-07-22

申请号：US12668514

申请日：2008-05-29

申请人： Yoshiyuki Nasuno ,  Akira Shimizu

发明人： Yoshiyuki Nasuno ,  Akira Shimizu

IPC分类号： H01L27/142

CPC分类号： H01L31/076 ,  H01L31/02021 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/046 ,  H01L31/0465 ,  Y02E10/548

摘要： To provide a thin-film solar cell module capable of preventing damage to a cell and a contact line.A thin-film solar cell module of the present invention has a characteristic that it provides a cell module having a plurality of cell strings bidirectionally connected to each other in parallel, the cell strings each having a plurality of cells connected to each other in series via a contact line, wherein when an output from the cell module is P (W), an output from one of the cell strings is Ps (W), and an area of the contact line is Sc (cm2) under a condition of light source: xenon lamp, irradiance: 100 mW/cm2, AM: 1.5, and temperature: 25° C., (P−Ps)/Sc is 10.7 (kW/cm2) or less, Ps is 12 W or less, and P is 385 W or less.

摘要翻译： 提供能够防止电池和接触线损坏的薄膜太阳能电池模块。 本发明的薄膜太阳能电池模块具有以下特征：提供具有彼此并联连接的多个单元串的单元模块，每个单元串均具有多个单元串联连接 接触线，其中当来自所述电池模块的输出为P（W）时，所述电池串中的一个的输出为Ps（W），并且在光源的条件下所述接触线的面积为Sc（cm2） ：氙灯，辐照度：100mW / cm 2，AM：1.5，温度：25℃，（P-Ps）/ Sc为10.7（kW / cm 2）以下，Ps为12W以下，P 385瓦或以下。

公开(公告)号：US20100059847A1

公开(公告)日：2010-03-11

申请号：US12523633

申请日：2007-11-15

申请人： Yoshiyuki Nasuno ,  Noriyoshi Kohama ,  Takanori Nakano

发明人： Yoshiyuki Nasuno ,  Noriyoshi Kohama ,  Takanori Nakano

IPC分类号： H01L31/103 ,  H01L21/329

CPC分类号： H01L31/0236 ,  H01L31/022425 ,  H01L31/02366 ,  H01L31/076 ,  Y02E10/548

摘要： To provide a stacked photoelectric conversion device and a method for producing the same, in which an interlayer is provided between photoelectric conversion layers to obtain an effect of controlling the amount of incidence light, and carrier recombination at an interface between the interlayer and a semiconductor layer is decreased to enhance photoelectric conversion efficiency.The stacked photoelectric conversion device of the present invention comprises a plurality of silicon-based photoelectric conversion layers having a p-i-n structure stacked, wherein at least a pair of adjacent photoelectric conversion layers have an interlayer of a silicon nitride therebetween, the pair of the photoelectric conversion layers are electrically connected with each other, and a p-type silicon-based semiconductor layer constituting a part of the photoelectric conversion layer and contacting the interlayer contains a nitrogen atom.

摘要翻译： 为了提供层叠光电转换装置及其制造方法，其中在光电转换层之间设置中间层以获得控制入射光的效果，以及在中间层和半导体层之间的界面处的载流子复合 降低增强光电转换效率。 本发明的层叠型光电转换元件具有层叠有pin结构的多个硅系光电转换层，其中至少一对相邻的光电转换层之间具有氮化硅中间层，该一对光电转换 层彼此电连接，并且构成光电转换层的一部分并与中间层接触的p型硅基半导体层包含氮原子。

公开(公告)号：US20080179702A1

公开(公告)日：2008-07-31

申请号：US11970043

申请日：2008-01-07

申请人： Yoshiyuki Nasuno ,  Yasuaki Ishikawa ,  Takanori Nakano

发明人： Yoshiyuki Nasuno ,  Yasuaki Ishikawa ,  Takanori Nakano

IPC分类号： H01L31/105 ,  H01L31/18

CPC分类号： H01L31/075 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains n-type impurities in a concentration of 1.0×1016 to 2.0×1017 cm−3.

摘要翻译： 光电转换装置包括依次堆叠的由硅基半导体制成的p型层，i型层和n型层，其中i型层含有浓度为 1.0×10 16至2.0×10 17 cm -3。