公开(公告)号：US5230934A

公开(公告)日：1993-07-27

申请号：US813922

申请日：1991-12-27

申请人： Kozaburo Sakano ,  Yuji Yamaguchi ,  Toshiyuki Iwamoto

发明人： Kozaburo Sakano ,  Yuji Yamaguchi ,  Toshiyuki Iwamoto

IPC分类号： B32B27/32 ,  B29C49/00 ,  B65D1/00 ,  B65D23/00 ,  C08J5/00 ,  C08L23/00 ,  C08L23/02 ,  C08L23/06 ,  C08L23/08 ,  C08L23/10 ,  C08L23/16 ,  C08L51/06 ,  C08L53/00

CPC分类号： C08L23/10 ,  B29C49/0005 ,  C08L23/06 ,  C08L53/00 ,  B29K2995/0024 ,  C08L23/0815 ,  C08L23/16 ,  Y10T428/1352 ,  Y10T428/31743 ,  Y10T428/31797

摘要： At least an outer layer of a plastic container is formed of a blend including an ethylene-propylene block copolymer containing 3 to 10% by weight, particularly 5 to 9% by weight of ethylene and a melt flow rate of 0.8 to 10 g/10 min. and a polyethylene having a given density at a weight ratio of 9:1 to 5:5. A plastic container made of an olefin resin having a frosted or matted appearance can be manufactured with excellent moldability without requiring any special working such as sand blasting the cavity surface of a mold. The container will gives an impression of shade off, depth and high grade.

摘要翻译： 塑料容器的至少外层由共混物形成，包括含有3-10重量％，特别是5-9重量％乙烯和熔体流动速率为0.8-10克/ 10埃的乙烯 - 丙烯嵌段共聚物 分钟 和具有给定密度的聚乙烯，重量比为9:1至5:5。 由具有磨砂或无光泽外观的烯烃树脂制成的塑料容器可以制造成具有优异的成型性，而不需要对模具的空腔表面进行喷砂的特殊工作。 容器将给人一种阴影，深度和高档次的印象。

公开(公告)号：US07956261B2

公开(公告)日：2011-06-07

申请号：US12408904

申请日：2009-03-23

申请人： Toshiyuki Iwamoto ,  Mitsuru Kitajima ,  Shigeru Muramatsu ,  Koichi Saigo

发明人： Toshiyuki Iwamoto ,  Mitsuru Kitajima ,  Shigeru Muramatsu ,  Koichi Saigo

IPC分类号： G10D3/00

CPC分类号： G10H1/348 ,  G10H1/346

摘要： A lever 40 is supported by a lever supporting portion 41. The lever 40 is urged by a first spring 45 and a second spring 46. The urging force of the first spring 45 varies over the entire operational range of the lever 40. The second spring 46 and a third spring 47 are provided serially through a movable supporting member 48. The displacement of the movable supporting member 48 is restricted by a fixed supporting member FR. If the urging force of the second spring 46 exceeds the urging force of the third spring 47, the restriction on the displacement of the movable supporting member 48 is removed. Therefore, the present invention provides a player with feeling similar to that the player perceives when he manipulates a damper pedal of an acoustic piano.

摘要翻译： 杠杆40由杠杆支撑部分41支撑。杠杆40由第一弹簧45和第二弹簧46推动。第一弹簧45的推力在杆40的整个操作范围内变化。第二弹簧 46和第三弹簧47串联地设置通过可动支撑构件48.可动支撑构件48的位移受到固定支撑构件FR的限制。 如果第二弹簧46的作用力超过第三弹簧47的作用力，则可移动支撑构件48的移动限制被去除。 因此，本发明提供一种玩家，其具有与玩家在操纵原声钢琴的减震踏板时感觉到的感觉相似的感觉。

公开(公告)号：US20100270621A1

公开(公告)日：2010-10-28

申请号：US12662498

申请日：2010-04-20

申请人： Toshiyuki Iwamoto ,  Gen Tsutsui

发明人： Toshiyuki Iwamoto ,  Gen Tsutsui

IPC分类号： H01L27/088

CPC分类号： H01L21/823431 ,  H01L21/823412 ,  H01L21/823462

摘要： A semiconductor device includes: a FinFET (Fin Field Effect Transistor); and a PlanarFET (Planar Field Effect Transistor). The FinFET is provided on a chip. The PlanarFET is provided on the chip. A second gate insulating layer of the PlanarFET is thicker than a first gate insulating layer of the FinFET.

摘要翻译： 半导体器件包括：FinFET（Fin场效应晶体管）; 和平面场效应晶体管（Planar Field Effect Transistor）。 FinFET在芯片上提供。 在芯片上提供了PlanarFET。 平面FET的第二栅极绝缘层比FinFET的第一栅极绝缘层厚。

公开(公告)号：US07754570B2

公开(公告)日：2010-07-13

申请号：US11210873

申请日：2005-08-25

申请人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto

发明人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto

IPC分类号： H01L21/336

CPC分类号： H01L29/518 ,  H01L21/0214 ,  H01L21/02142 ,  H01L21/2652 ,  H01L21/2658 ,  H01L21/28185 ,  H01L21/28238 ,  H01L21/3115 ,  H01L21/3141 ,  H01L21/31645 ,  H01L21/823807 ,  H01L21/823828 ,  H01L21/823842 ,  H01L29/1033

摘要： Threshold voltage of a field effect transistor is successfully adjusted with a smaller dose of an impurity, as compared with a conventional adjustment of the threshold voltage only by doping an impurity into the channel region. A semiconductor device 100 has a silicon substrate 101 and a P-type MOSFET 103 comprising a SiON film 113 formed on the silicon substrate 101, and a polycrystalline silicon film 106. Any one of, or two or more of metals selected from the group consisting of Hf, Zr, Al, La, Pr, Y, Ti, Ta and W are allowed to reside at the interface 115 between the polycrystalline silicon film 106 and the SiON film 113, and concentration of the metal(s) at the interface 115 is adjusted to 5×1013 atoms/cm2 or more and less than 1.4×1015 atoms/cm2.

摘要翻译： 与仅通过将杂质掺杂到沟道区域中的阈值电压的常规调节相比，场效应晶体管的阈值电压被成功地用较小剂量的杂质调节。 半导体器件100具有硅衬底101和包括形成在硅衬底101上的SiON膜113的P型MOSFET 103和多晶硅膜106.选自以下的金属中的任何一种或两种以上选自 的Hf，Zr，Al，La，Pr，Y，Ti，Ta和W被放置在多晶硅膜106和SiON膜113之间的界面115处，并且界面115处的金属的浓度 调整为5×1013原子/ cm 2以上且小于1.4×1015原子/ cm 2。

公开(公告)号：US07718532B2

公开(公告)日：2010-05-18

申请号：US11700003

申请日：2007-01-31

申请人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

发明人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

IPC分类号： H01L21/302

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31111 ,  H01L28/40 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518

摘要： According to the present invention, high-k film can be etched to provide a desired geometry without damaging the silicon underlying material. A silicon oxide film 52 is formed on a silicon substrate 50 by thermal oxidation, and a high dielectric constant insulating film 54 comprising HfSiOx is formed thereon. Thereafter, polycrystalline silicon layer 56 and high dielectric constant insulating film 54 are selectively removed in stages by a dry etching through a mask of the resist layer 58, and subsequently, the residual portion of the high dielectric constant insulating film 54 and the silicon oxide film 52 are selectively removed by wet etching through a mask of polycrystalline silicon layer 56. A liquid mixture of phosphoric acid and sulfuric acid is employed for the etchant solution. The temperature of the etchant solution is preferably equal to or lower than 200 degree C., and more preferably equal to or less than 180 degree C.

摘要翻译： 根据本发明，可以蚀刻高k膜以提供期望的几何形状而不损坏硅基底材料。 通过热氧化在硅衬底50上形成氧化硅膜52，并且在其上形成包括HfSiO x的高介电常数绝缘膜54。 此后，通过干蚀刻通过抗蚀剂层58的掩模来分阶段地去除多晶硅层56和高介电常数绝缘膜54，随后，高介电常数绝缘膜54和氧化硅膜的残留部分 52通过湿法蚀刻通过多晶硅层56的掩模选择性地去除。磷酸和硫酸的液体混合物用于蚀刻剂溶液。 蚀刻剂溶液的温度优选等于或低于200℃，更优选等于或小于180℃。

公开(公告)号：US20090152469A1

公开(公告)日：2009-06-18

申请号：US12371325

申请日：2009-02-13

申请人： Seizi Nishizawa ,  Toshiyuki Iwamoto

发明人： Seizi Nishizawa ,  Toshiyuki Iwamoto

IPC分类号： G01J5/02

CPC分类号： G01J3/08 ,  G01N21/3586 ,  G01N2201/0696 ,  G01N2201/0698

摘要： A time-domain pulsed spectroscopy apparatus which has a pulsed laser light source; a splitting unit to split pulsed laser light; a pulsed-light emitting unit; a detector; a sample holder; and a sample-unit entrance and exit optical systems; wherein the time-domain pulsed spectroscopy apparatus further comprises: at least one optical-path-length varying unit for setting a photometric range; at least one optical delay unit for the wave form signal measurement; and, at least one gate member to pass or block the pulsed light to a reflector.

摘要翻译： 一种具有脉冲激光光源的时域脉冲光谱仪; 用于分离脉冲激光的分离单元; 脉冲发光单元; 检测器 样品架 和采样单元入口和出口光学系统; 其中所述时域脉冲光谱装置还包括：用于设定光度范围的至少一个光路长度变化单元; 用于波形信号测量的至少一个光学延迟单元; 以及至少一个栅极件，以将脉冲光传递或阻挡到反射器。

公开(公告)号：US20080081445A1

公开(公告)日：2008-04-03

申请号：US11700003

申请日：2007-01-31

申请人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

发明人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

IPC分类号： H01L21/465 ,  H01L21/283

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31111 ,  H01L28/40 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518

摘要： According to the present invention, high-k film can be etched to provide a desired geometry without damaging the silicon underlying material. A silicon oxide film 52 is formed on a silicon substrate 50 by thermal oxidation, and a high dielectric constant insulating film 54 comprising HfSiOx is formed thereon. Thereafter, polycrystalline silicon layer 56 and high dielectric constant insulating film 54 are selectively removed in stages by a dry etching through a mask of the resist layer 58, and subsequently, the residual portion of the high dielectric constant insulating film 54 and the silicon oxide film 52 are selectively removed by wet etching through a mask of polycrystalline silicon layer 56. A liquid mixture of phosphoric acid and sulfuric acid is employed for the etchant solution. The temperature of the etchant solution is preferably equal to or lower than 200 degree C., and more preferably equal to or less than 180 degree C.

摘要翻译： 根据本发明，可以蚀刻高k膜以提供期望的几何形状而不损坏硅基底材料。 通过热氧化在硅衬底50上形成氧化硅膜52，并且在其上形成包括HfSiO x的高介电常数绝缘膜54。 此后，通过干蚀刻通过抗蚀剂层58的掩模来分阶段地去除多晶硅层56和高介电常数绝缘膜54，随后，高介电常数绝缘膜54和氧化硅膜的残留部分 52通过湿蚀刻被选择性地通过多晶硅层56的掩模去除。 对于蚀刻剂溶液使用磷酸和硫酸的液体混合物。 蚀刻剂溶液的温度优选等于或低于200℃，更优选等于或小于180℃。

公开(公告)号：US07238996B2

公开(公告)日：2007-07-03

申请号：US11129439

申请日：2005-05-16

申请人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto ,  Motofumi Saitoh ,  Hirohito Watanabe ,  Ayuka Tada

发明人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto ,  Motofumi Saitoh ,  Hirohito Watanabe ,  Ayuka Tada

IPC分类号： H01L29/70

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517

摘要： A semiconductor device 100 comprises a silicon substrate 102, an N-type MOSFET 118 including a high concentration-high dielectric constant film 108b formed on the silicon substrate 102 and a polycrystalline silicon film 114, and a P-type MOSFET 120 including a low concentration-high dielectric constant film 108a and a polycrystalline silicon film 114 formed on the semiconductor substrate 102 to be juxtaposed to the N-type MOSFET 118. The low concentration-high dielectric constant film 108a and the high concentration-high dielectric constant film 108b are composed of a material containing one or more element (s) selected from a group consisting of Hf and Zr. The concentration of the above-described metallic element contained in the low concentration-high dielectric constant film 108a is lower than that contained in the high concentration-high dielectric constant film 108b.

摘要翻译： 半导体器件100包括硅衬底102，包括形成在硅衬底102上的高浓度 - 高介电常数膜108b和多晶硅膜114的N型MOSFET 118以及包括低电平的P型MOSFET 120 浓度高介电常数膜108a和形成在半导体衬底102上并与N型MOSFET 118并置的多晶硅膜114。 低浓度 - 高介电常数膜108a和高浓度 - 高介电常数膜108b由含有选自Hf和Zr的一种或多种元素的材料构成。 包含在低浓度 - 高介电常数膜108a中的上述金属元素的浓度低于高浓度 - 高介电常数膜108b中包含的金属元素的浓度。

公开(公告)号：US20060131670A1

公开(公告)日：2006-06-22

申请号：US10561608

申请日：2004-04-26

申请人： Takashi Ogura ,  Nobuyuki Ikarashi ,  Toshiyuki Iwamoto ,  Hirohito Watanabe

发明人： Takashi Ogura ,  Nobuyuki Ikarashi ,  Toshiyuki Iwamoto ,  Hirohito Watanabe

IPC分类号： H01L29/76

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6656 ,  H01L29/78

摘要： A semiconductor device provided with a MIS type field effect transistor comprising a silicon substrate, a gate insulating film having a high-dielectric-constant metal oxide film which is formed on the silicon substrate via a silicon containing insulating film, a silicon-containing gate electrode formed on the gate insulating film, and a sidewall including, as a constituting material, silicon oxide on a lateral face side of the gate electrode, wherein a silicon nitride film is interposed between the sidewall and at least the lateral face of the gate electrode. This semiconductor device, although having a fine structure with a small gate length, is capable of low power consumption and fast operation.

摘要翻译： 一种设置有MIS型场效应晶体管的半导体器件，包括硅衬底，具有通过含硅绝缘膜形成在硅衬底上的高介电常数金属氧化物膜的栅极绝缘膜，含硅栅电极 形成在所述栅极绝缘膜上的侧壁，以及在所述栅电极的侧面上包含氧化硅作为构成材料的侧壁，其中，所述侧壁与所述栅电极的至少所述侧面之间插入有氮化硅膜。 该半导体器件尽管具有栅极长度小的精细结构，但能够实现低功耗和快速操作。

公开(公告)号：US06685480B2

公开(公告)日：2004-02-03

申请号：US09816945

申请日：2001-03-23

申请人： Tetsuo Nishimoto ,  Toshiyuki Iwamoto

发明人： Tetsuo Nishimoto ,  Toshiyuki Iwamoto

IPC分类号： G09B900

CPC分类号： G09B15/00 ,  G06F19/00 ,  G09B19/0015

摘要： A physical motion state evaluation apparatus is configured by a foot switch unit for detecting user's step motions, physical motion state detectors for detecting motions of prescribed parts (e.g., hands, foot) of a user's body, a display and a musical tone generator. Herein, the physical motion state detector is configured by a projector unit for projecting optical beams along optical axes and a receiver unit for receiving the optical beams respectively, so that the receiver unit detects a shutoff event in which the prescribed part of the user's body shuts off at least one of the optical beams. Physical motion state instructions request a user to move the prescribed parts of the user's body to instructed positions at instruction timings respectively, so that the physical motion state detectors provide detection timings at which the prescribed parts of the user's body are precisely moved to the instructed positions in conformity with the instruction timings. Based on deviation values between the instruction timings and detection timings, the apparatus produces evaluation results on user's physical motion states in comparison with the physical motion state instructions. The evaluation results can be visually presented on a screen of the display as scores being marked for the user's physical motion states, or they can be subjected to auditory presentation in which the musical tone generator sequentially generates musical tones corresponding to constituent notes of a melody in response to the detection timings that belong to tone generation ranges of the instruction timings.

摘要翻译： 物理运动状态评估装置由用于检测用户步进运动的脚踏开关单元，用于检测用户身体的规定部分（例如，手，脚）的运动的物理运动状态检测器，显示器和乐音发生器构成。 这里，物理运动状态检测器由用于沿光轴投射光束的投影仪单元和用于分别接收光束的接收器单元构成，使得接收器单元检测用户身体的规定部分关闭的关闭事件 关闭至少一个光束。 物理运动状态指令请求用户分别在指令定时将用户身体的规定部分移动到指示位置，使得物理运动状态检测器提供用户身体的规定部分精确地移动到指示位置的检测定时 符合指令定时。 根据指令定时和检测定时之间的偏差值，与物理运动状态指令相比，该装置产生用户物理运动状态的评估结果。 评估结果可以在显示器的屏幕上视觉呈现，因为对用户的物理运动状态进行标记，或者可以对其进行听觉呈现，其中，乐音发生器顺序地产生与音乐的组成音符相对应的乐音 响应于属于指令定时的音产生范围的检测定时。