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21.发明授权Multigate semiconductor device with vertical channel current and method of fabrication 有权具有垂直沟道电流的半导体器件和制造方法公开(公告)号：US06580124B1
公开(公告)日：2003-06-17
申请号：US09639577
申请日：2000-08-14
IPC分类号： H01L2976
CPC分类号： H01L27/11568 , G11C11/5621 , G11C11/5671 , G11C16/0458 , G11C16/0475 , G11C2211/5611 , G11C2211/5612 , H01L21/28273 , H01L21/28282 , H01L27/115 , H01L27/11556 , H01L29/66825 , H01L29/66833 , H01L29/7881
摘要： The present invention is a multibit nonvolatile memory and its method of fabrication. According to the present invention a silicon channel body having a first and second channel surface is formed. A charge storage medium is formed adjacent to the first channel surface and a second charge storage medium is formed adjacent to the second channel surface. A first control gate is formed adjacent to the first charge storage medium adjacent to the first channel surface and a second control gate is formed adjacent to the second charge storage medium adjacent to the second surface.
摘要翻译： 本发明是一种多位非易失性存储器及其制造方法。 根据本发明，形成具有第一和第二通道表面的硅通道体。 在第一通道表面附近形成电荷存储介质，并且在第二通道表面附近形成第二电荷存储介质。 与第一通道表面相邻的第一电荷存储介质相邻地形成第一控制栅极，并且邻近第二表面邻近第二电荷存储介质形成第二控制栅极。
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公开(公告)号：US06483736B2
公开(公告)日：2002-11-19
申请号：US09939431
申请日：2001-08-24
IPC分类号： G11C1100
CPC分类号： G11C17/06 , G11C11/5692 , G11C13/003 , G11C17/14 , G11C17/16 , G11C17/165 , G11C2213/71 , G11C2213/76 , H01L27/101 , H01L27/1021 , H01L27/2481 , H01L45/1233 , H01L45/16
摘要： A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.
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公开(公告)号：US6034882A
公开(公告)日：2000-03-07
申请号：US192883
申请日：1998-11-16
IPC分类号： H01L27/10 , G11C11/56 , G11C17/16 , H01L27/102 , G11C17/00
CPC分类号： H01L27/1021 , G11C11/5692 , G11C13/003 , G11C17/16 , G11C11/5678 , G11C2213/71 , G11C2213/76
摘要： A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.
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24.发明授权Vertically stacked field programmable nonvolatile memory and method of fabrication 有权垂直堆叠现场可编程非易失性存储器和制造方法公开(公告)号：US08503215B2
公开(公告)日：2013-08-06
申请号：US13526671
申请日：2012-06-19
IPC分类号： G11C11/36
CPC分类号： G11C17/06 , G11C11/5692 , G11C13/003 , G11C17/14 , G11C17/16 , G11C17/165 , G11C2213/71 , G11C2213/76 , H01L27/101 , H01L27/1021 , H01L27/2481 , H01L45/1233 , H01L45/16
摘要： A memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. The steering element and state change element are disposed in a vertically-oriented pillar. Other aspects are also provided.
摘要翻译： 提供了一种存储单元，其包括转向元件和与该转向元件串联耦合的非易失性状态变化元件。 转向元件和状态改变元件设置在垂直定向的支柱中。 还提供其他方面。
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25.发明申请VERTICALLY STACKED FIELD PROGRAMMABLE NONVOLATILE MEMORY AND METHOD OF FABRICATION 有权垂直堆叠现场可编程非易失性存储器和制造方法公开(公告)号：US20120250396A1
公开(公告)日：2012-10-04
申请号：US13526671
申请日：2012-06-19
IPC分类号： G11C11/00 , H01L21/8239
CPC分类号： G11C17/06 , G11C11/5692 , G11C13/003 , G11C17/14 , G11C17/16 , G11C17/165 , G11C2213/71 , G11C2213/76 , H01L27/101 , H01L27/1021 , H01L27/2481 , H01L45/1233 , H01L45/16
摘要： A memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. The steering element and state change element are disposed in a vertically-oriented pillar. Other aspects are also provided.
摘要翻译： 提供了一种存储单元，其包括转向元件和与该转向元件串联耦合的非易失性状态变化元件。 转向元件和状态改变元件设置在垂直定向的支柱中。 还提供其他方面。
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公开(公告)号：US20120223380A1
公开(公告)日：2012-09-06
申请号：US13468731
申请日：2012-05-10
申请人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Andrew J. Walker , Christopher J. Petti , Igor G. Kouznetzov , Mark G. Johnson , Paul Michael Farmwald , Brad Herner
发明人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Andrew J. Walker , Christopher J. Petti , Igor G. Kouznetzov , Mark G. Johnson , Paul Michael Farmwald , Brad Herner
IPC分类号： H01L29/788 , H01L21/336 , H01L29/792
CPC分类号： H01L27/11582 , G11C16/0466 , G11C16/10 , G11C16/14 , G11C16/26 , G11C16/3427 , G11C2211/5612 , H01L21/31053 , H01L21/76819 , H01L21/8221 , H01L23/528 , H01L23/5329 , H01L27/0688 , H01L27/112 , H01L27/11286 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11551 , H01L27/11556 , H01L27/11558 , H01L27/11565 , H01L27/11568 , H01L27/11573 , H01L27/11578 , H01L27/1158 , H01L27/12 , H01L27/1203 , H01L29/0626 , H01L29/0661 , H01L29/16 , H01L29/1604 , H01L29/42324 , H01L29/42332 , H01L29/42364 , H01L29/511 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66825 , H01L29/66833 , H01L29/7391 , H01L29/78642 , H01L29/7881 , H01L29/7889 , H01L29/792 , H01L29/7926 , H01L29/861 , H01L29/8616
摘要： There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
摘要翻译： 提供了一种包括多个器件级的电荷存储器件的单片三维阵列，其中通过化学机械抛光将两个连续的器件级之间的至少一个表面平坦化。
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27.发明授权Vertically stacked field programmable nonvolatile memory and method of fabrication 有权垂直堆叠现场可编程非易失性存储器和制造方法公开(公告)号：US07816189B2
公开(公告)日：2010-10-19
申请号：US11925723
申请日：2007-10-26
IPC分类号： H01L21/82
CPC分类号： G11C17/06 , G11C11/5692 , G11C13/003 , G11C17/14 , G11C17/16 , G11C17/165 , G11C2213/71 , G11C2213/76 , H01L27/101 , H01L27/1021 , H01L27/2481 , H01L45/1233 , H01L45/16
摘要： A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.
摘要翻译： 公开了一种非常高密度的现场可编程存储器。 阵列垂直地形成在衬底上方，使用几层，其各层包括垂直制造的存储单元。 N级阵列中的单元可以形成N + 1掩蔽步骤以及接触所需的掩蔽步骤。 自动对准技术的最大限度地使光刻限制最小化。 在一个实施例中，外围电路形成在硅衬底中，并且在衬底上方制造N电平阵列。
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28.发明授权Vertically stacked field programmable nonvolatile memory and method of fabrication 有权垂直堆叠现场可编程非易失性存储器和制造方法公开(公告)号：US07265000B2
公开(公告)日：2007-09-04
申请号：US11354470
申请日：2006-02-14
IPC分类号： H01L21/82
CPC分类号： G11C17/06 , G11C11/5692 , G11C13/003 , G11C17/14 , G11C17/16 , G11C17/165 , G11C2213/71 , G11C2213/76 , H01L27/101 , H01L27/1021 , H01L27/2481 , H01L45/1233 , H01L45/16
摘要： A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.
摘要翻译： 公开了一种非常高密度的现场可编程存储器。 阵列垂直地形成在衬底上方，使用几层，其各层包括垂直制造的存储单元。 N级阵列中的单元可以形成N + 1掩蔽步骤以及接触所需的掩蔽步骤。 自动对准技术的最大限度地使光刻限制最小化。 在一个实施例中，外围电路形成在硅衬底中，并且在衬底上方制造N电平阵列。
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公开(公告)号：US09650951B2
公开(公告)日：2017-05-16
申请号：US13270200
申请日：2011-10-10
CPC分类号： F02B75/042 , F01L5/06 , F01L7/04 , F02B75/041 , F02D15/04
摘要： An internal combustion engine can include a piston moving in a cylinder and a junk head disposed opposite the piston head in the cylinder. The junk head can optionally be moveable between a higher compression ratio position closer to a top dead center of the piston and a lower compression ratio position further from the top dead center position of the piston. At least one intake port can deliver a fluid comprising inlet air to a combustion chamber within the cylinder. Combustion gases can be directed out of the combustion volume through at least one exhaust port. One or both of the intake port and the exhaust port can be opened and closed by operation of a sleeve valve that at least partially encircles the piston. Related articles, systems, and methods are described.
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公开(公告)号：US20140158093A1
公开(公告)日：2014-06-12
申请号：US13937964
申请日：2013-07-09
申请人： James M. Cleeves , Michael Hawkes
发明人： James M. Cleeves , Michael Hawkes
IPC分类号： F02D41/30
CPC分类号： F02D41/30 , F02D35/0053 , F02D41/123 , F02D2200/0404 , F02D2400/06 , F02M3/045 , F02M37/0023
摘要： Fuel efficiency of small carbureted engines can be improved through the use of a fuel shut off valve that ceases fuel flow in the carburetor upon determination that the engine throttle has been closed and the engine is not at or near an idle condition.
摘要翻译： 通过使用在确定发动机节气门已经关闭并且发动机不处于或接近空转状态的化油器中的燃料流动的燃料截止阀，可以改善小型化油发动机的燃油效率。
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