公开(公告)号：US20060134827A1

公开(公告)日：2006-06-22

申请号：US11336567

申请日：2006-01-20

申请人： Alan Wood ,  Warren Farnworth ,  Charles Watkins ,  Peter Benson

发明人： Alan Wood ,  Warren Farnworth ,  Charles Watkins ,  Peter Benson

IPC分类号： H01L21/50

CPC分类号： H01L27/14685 ,  B33Y10/00 ,  B33Y80/00 ,  H01L21/56 ,  H01L23/3128 ,  H01L27/14618 ,  H01L27/14627 ,  H01L2224/04105 ,  H01L2224/20 ,  H01L2924/01005 ,  H01L2924/01027 ,  H01L2924/01046 ,  H01L2924/12041

摘要： Microlenses for directing radiation toward a sensor of an imaging device include a plurality of mutually adhered layers of cured optically transmissive material. Systems include at least one microprocessor, a substrate including an array of microlenses formed thereon in electrical communication with the at least one microprocessor. At least one microlens in the array includes a plurality of mutually adhered layers of cured optically transmissive material.

摘要翻译： 用于将辐射引导到成像装置的传感器的微透镜包括固化的光学透射材料的多个相互附着的层。 系统包括至少一个微处理器，包括形成在其上的与该至少一个微处理器电连通的微透镜阵列的衬底。 阵列中的至少一个微透镜包括固化的光学透射材料的多个相互附着的层。

公开(公告)号：US20060115926A1

公开(公告)日：2006-06-01

申请号：US11336540

申请日：2006-01-20

申请人： Alan Wood ,  Warren Farnworth ,  Charles Watkins ,  Peter Benson

发明人： Alan Wood ,  Warren Farnworth ,  Charles Watkins ,  Peter Benson

IPC分类号： H01L21/50

CPC分类号： H01L27/14685 ,  B33Y10/00 ,  B33Y80/00 ,  H01L21/56 ,  H01L23/3128 ,  H01L27/14618 ,  H01L27/14627 ,  H01L2224/04105 ,  H01L2224/20 ,  H01L2924/01005 ,  H01L2924/01027 ,  H01L2924/01046 ,  H01L2924/12041

摘要： A conductive element is formed on a substrate by forming an organometallic layer on at least a portion of a surface of the substrate, heating a portion of the organometallic layer, and removing an unheated portion of the organometallic layer. In other methods, a flowable, uncured conductive material may be deposited on a surface of the substrate, the flowable, uncured conductive material may be selectively cured over at least a portion of the surface of the substrate, and a portion of the cured conductive material may be removed. A conductive via is formed by forming a hole at least partially through a thickness of a substrate, depositing an organometallic material within at least a portion of the hole, and selectively heating at least a portion of the organometallic material.

摘要翻译： 通过在基板表面的至少一部分上形成有机金属层，加热部分有机金属层，去除有机金属层的未加热部分，在基板上形成导电元件。 在其他方法中，可流动的未固化的导电材料可以沉积在基底的表面上，可流动的未固化的导电材料可以选择性地固化在基底表面的至少一部分上，并且一部分固化的导电材料 可能被删除。 通过至少部分地穿过衬底的厚度形成孔，在孔的至少一部分内沉积有机金属材料并选择性地加热至少一部分有机金属材料来形成导电通孔。

公开(公告)号：US20060115925A1

公开(公告)日：2006-06-01

申请号：US11336228

申请日：2006-01-20

申请人： Alan Wood ,  Warren Farnworth ,  Charles Watkins ,  Peter Benson

发明人： Alan Wood ,  Warren Farnworth ,  Charles Watkins ,  Peter Benson

IPC分类号： H01L21/50

CPC分类号： H01L27/14685 ,  B33Y10/00 ,  B33Y80/00 ,  H01L21/56 ,  H01L23/3128 ,  H01L27/14618 ,  H01L27/14627 ,  H01L2224/04105 ,  H01L2224/20 ,  H01L2924/01005 ,  H01L2924/01027 ,  H01L2924/01046 ,  H01L2924/12041

摘要： A microlens for use in an imaging device may be fabricated by disposing a flowable, uncured optically transmissive material in at least one layer onto a surface of a substrate, selectively curing at least a portion of the flowable, uncured optically transmissive material, and removing the flowable, uncured optically transmissive material from the surface of the substrate.

摘要翻译： 用于成像装置的微透镜可以通过将至少一层中的可流动的未固化的光学透射材料设置在基板的表面上来选择性地固化可流动的未固化的光学透射材料的至少一部分， 可流动的，未固化的光学透射材料。

公开(公告)号：US07713841B2

公开(公告)日：2010-05-11

申请号：US10666742

申请日：2003-09-19

申请人： Alan G. Wood ,  Warren M. Farnworth ,  David R. Hembree ,  Sidney B. Rigg ,  William M. Hiatt ,  Peter Benson ,  Kyle K. Kirby ,  Salman Akram

发明人： Alan G. Wood ,  Warren M. Farnworth ,  David R. Hembree ,  Sidney B. Rigg ,  William M. Hiatt ,  Peter Benson ,  Kyle K. Kirby ,  Salman Akram

IPC分类号： H01L21/46

CPC分类号： G03F7/0037 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y80/00 ,  G03F7/0047

摘要： A support structure for use with a semiconductor substrate in thinning, or backgrinding, thereof, as well as during post-thinning processing of the semiconductor substrate includes a portion which extends substantially along and around an outer periphery of the semiconductor substrate to impart the thinned semiconductor substrate with rigidity. The support structure may be configured as a ring or as a member which substantially covers an active surface of the semiconductor substrate and forms a protective structure over each semiconductor device carried by the active surface. Assemblies that include the support structure and a semiconductor substrate are also within the scope of the present invention, as are methods for forming the support structures and thinning and post-thinning processes that include use of the support structures.

摘要翻译： 在半导体衬底的薄化或后研磨以及后稀化处理期间与半导体衬底一起使用的支撑结构包括基本上沿半导体衬底的外周延伸并且围绕半导体衬底的外周延伸的部分，以使薄化半导体 基板具有刚性。 支撑结构可以被配置为环或作为基本上覆盖半导体衬底的有源表面并且在由有源表面承载的每个半导体器件上形成保护结构的构件。 包括支撑结构和半导体衬底的组件也在本发明的范围内，形成支撑结构的方法和包括使用支撑结构的减薄和后变薄工艺也是如此。

公开(公告)号：US07960829B2

公开(公告)日：2011-06-14

申请号：US11216617

申请日：2005-08-31

申请人： Alan G. Wood ,  Warren M. Farnworth ,  David R. Hembree ,  Sidney B. Rigg ,  William M. Hiatt ,  Peter Benson ,  Kyle K. Kirby ,  Salman Akram

发明人： Alan G. Wood ,  Warren M. Farnworth ,  David R. Hembree ,  Sidney B. Rigg ,  William M. Hiatt ,  Peter Benson ,  Kyle K. Kirby ,  Salman Akram

IPC分类号： H01L23/12

CPC分类号： G03F7/0037 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y80/00 ,  G03F7/0047

摘要： A support structure for use with a semiconductor substrate in thinning, or backgrinding, thereof, as well as during post-thinning processing of the semiconductor substrate includes a portion that extends substantially along and around an outer periphery of the semiconductor substrate to impart the thinned semiconductor substrate with rigidity. The support structure may be configured as a ring or as a member that substantially covers an active surface of the semiconductor substrate and forms a protective structure over each semiconductor device carried by the active surface.

摘要翻译： 用于半导体衬底的减薄或后研磨以及在半导体衬底的后变薄处理期间的支撑结构包括基本上沿着半导体衬底的外周延伸并围绕半导体衬底的外周延伸的部分，以使半导体衬底 基板具有刚性。 支撑结构可以被构造为环或作为基本上覆盖半导体衬底的有源表面并且在由有源表面承载的每个半导体器件上形成保护结构的构件。

公开(公告)号：US20060043569A1

公开(公告)日：2006-03-02

申请号：US11129105

申请日：2005-05-13

申请人： Peter Benson ,  Salman Akram

发明人： Peter Benson ,  Salman Akram

IPC分类号： H01L23/04 ,  H01L29/40

CPC分类号： H01L21/76898 ,  B33Y80/00 ,  H01L23/481 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14685 ,  H01L31/02161 ,  H01L31/02327 ,  H01L2224/0554 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01021 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/013 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Low temperature processed back side redistribution lines (RDLs) are disclosed. Low temperature processed back side RDLs may be electrically connected to the active surface devices of a semiconductor substrate using through wafer interconnects (TWIs). The TWIs may be formed prior to forming the RDLs, after forming the RDLs, or substantially simultaneously to forming the RDLs. The material for the back side RDLs and various other associated materials, such as dielectrics and conductive via filler materials, are processed at temperatures sufficiently low so as to not damage the semiconductor devices or associated components contained on the active surface of the semiconductor substrate. The low temperature processed back side RDLs of the present invention may be employed with optically interactive semiconductor devices and semiconductor memory devices, among many others. Semiconductor devices employing the RDLs of the present invention may be stacked and electrically connected theretogether.

摘要翻译： 公开了低温处理后侧再分配线（RDL）。 低温处理的背面RDL可以通过晶片互连（TWI）与半导体衬底的有源表面器件电连接。 TWI可以在形成RDL之后，在形成RDL之后形成，或者基本上同时形成以形成RDL。 用于背面RDL和各种其它相关材料（例如电介质和导电通孔填充材料）的材料在足够低的温度下进行处理，以便不损坏包含在半导体衬底的有源表面上的半导体器件或相关组件。 本发明的低温处理背面RDL可以用于光学交互式半导体器件和半导体存储器件等等。 采用本发明的RDL的半导体器件可以堆叠并且电连接在一起。

公开(公告)号：US20070259517A1

公开(公告)日：2007-11-08

申请号：US11777797

申请日：2007-07-13

申请人： Peter Benson ,  Salman Akram

发明人： Peter Benson ,  Salman Akram

IPC分类号： H01L21/4763

CPC分类号： H01L21/76898 ,  B33Y80/00 ,  H01L23/481 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14685 ,  H01L31/02161 ,  H01L31/02327 ,  H01L2224/0554 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01021 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/013 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Low temperature processed back side redistribution lines (RDLs) are disclosed. Low temperature processed back side RDLs may be electrically connected to the active surface devices of a semiconductor substrate using through wafer interconnects (TWIs). The TWIs may be formed prior to forming the RDLs, after forming the RDLs, or substantially simultaneously to forming the RDLs. The material for the back side RDLs and various other associated materials, such as dielectrics and conductive via filler materials, are processed at temperatures sufficiently low so as to not damage the semiconductor devices or associated components contained on the active surface of the semiconductor substrate. The low temperature processed back side RDLs of the present invention may be employed with optically interactive semiconductor devices and semiconductor memory devices, among many others. Semiconductor devices employing the RDLs of the present invention may be stacked and electrically connected theretogether.

摘要翻译： 公开了低温处理后侧再分配线（RDL）。 低温处理的背面RDL可以通过晶片互连（TWI）与半导体衬底的有源表面器件电连接。 TWI可以在形成RDL之后，在形成RDL之后形成，或者基本上同时形成以形成RDL。 用于背面RDL和各种其它相关材料（例如电介质和导电通孔填充材料）的材料在足够低的温度下进行处理，以便不损坏包含在半导体衬底的有源表面上的半导体器件或相关组件。 本发明的低温处理背面RDL可以用于光学交互式半导体器件和半导体存储器件等等。 采用本发明的RDL的半导体器件可以堆叠并且电连接在一起。

公开(公告)号：US20050254133A1

公开(公告)日：2005-11-17

申请号：US10845303

申请日：2004-05-13

申请人： Salman Akram ,  Peter Benson

发明人： Salman Akram ,  Peter Benson

IPC分类号： G02B3/00 ,  G02B7/02 ,  G02B13/00 ,  G02B27/10 ,  H01L27/146 ,  H01L31/0232 ,  H04N5/225

CPC分类号： G02B13/0085 ,  G02B3/0012 ,  G02B3/0056 ,  G02B7/02 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02325 ,  H01L2224/48091 ,  H01L2924/15174 ,  H04N5/2253 ,  H04N5/2254 ,  H01L2924/00014

摘要： Microelectronic imagers, optical devices for microelectronic imagers, methods for manufacturing integrated optical devices for use with microelectronic imagers, and methods for packaging microelectronic imagers. The optical devices are manufactured in optical device assemblies that provide efficient and highly accurate fabrication of the optics that are used in microelectronic imagers. The optical device assemblies are particularly useful for packaging a plurality of microelectronic imagers at the wafer level. Wafer-level packaging is expected to significantly enhance the efficiency of manufacturing microelectronic imagers because a plurality of imagers can be packaged simultaneously using highly accurate and efficient processes developed for packaging processors, memory devices and other semiconductor devices.

摘要翻译： 微电子成像器，用于微电子成像器的光学器件，用于制造用于微电子成像器的集成光学器件的方法，以及用于封装微电子成像器的方法。 光学器件在光学器件组件中制造，其提供用于微电子成像器的光学器件的有效且高精度的制造。 光学器件组件特别适用于在晶片级封装多个微电子成像器。 预期晶圆级封装将显着提高制造微电子成像器的效率，因为可以使用为封装处理器，存储器件和其它半导体器件开发的高精度和有效的工艺来同时封装多个成像器。

公开(公告)号：US20060202315A1

公开(公告)日：2006-09-14

申请号：US11418362

申请日：2006-05-04

申请人： Peter Benson ,  William Hiatt

发明人： Peter Benson ,  William Hiatt

IPC分类号： H01L23/02

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/48 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

摘要： Microelectronic devices, microfeature workpieces, and methods of forming and stacking the microelectronic devices and the microfeature workpieces. In one embodiment, a microfeature workpiece includes a plurality of first microelectronic dies. The individual first dies have an integrated circuit, a plurality of pads electrically coupled to the integrated circuit, and a plurality of first conductive mating structures at least proximate to corresponding pads. The first conductive mating structures project away from the first dies and are configured to interconnect with corresponding complementary second conductive mating structures on second dies which are to be mounted to corresponding first dies.

摘要翻译： 微电子器件，微型工件以及形成和堆叠微电子器件和微特征工件的方法。 在一个实施例中，微特征工件包括多个第一微电子管芯。 单独的第一裸片具有集成电路，电耦合到集成电路的多个焊盘以及至少靠近相应焊盘的多个第一导电配合结构。 第一导电配合结构远离第一管芯延伸，并且被配置成与要安装到相应的第一管芯的第二管芯上的相应的互补的第二导电配合结构相互连接。

公开(公告)号：US20050104171A1

公开(公告)日：2005-05-19

申请号：US10713626

申请日：2003-11-13

申请人： Peter Benson ,  William Hiatt

发明人： Peter Benson ,  William Hiatt

IPC分类号： H01L23/48 ,  H01L25/065 ,  H01L23/02

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/48 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

摘要： Microelectronic devices, microfeature workpieces, and methods of forming and stacking the microelectronic devices and the microfeature workpieces. In one embodiment, a microfeature workpiece includes a plurality of first microelectronic dies. The individual first dies have an integrated circuit, a plurality of pads electrically coupled to the integrated circuit, and a plurality of first conductive mating structures at least proximate to corresponding pads. The first conductive mating structures project away from the first dies and are configured to interconnect with corresponding complementary second conductive mating structures on second dies which are to be mounted to corresponding first dies.

摘要翻译： 微电子器件，微型工件以及形成和堆叠微电子器件和微特征工件的方法。 在一个实施例中，微特征工件包括多个第一微电子管芯。 单独的第一裸片具有集成电路，电耦合到集成电路的多个焊盘以及至少靠近相应焊盘的多个第一导电配合结构。 第一导电配合结构远离第一管芯延伸，并且被配置成与要安装到相应的第一管芯的第二管芯上的相应的互补的第二导电配合结构相互连接。