公开(公告)号：US5230753A

公开(公告)日：1993-07-27

申请号：US802119

申请日：1991-12-03

申请人： Sigurd Wagner

发明人： Sigurd Wagner

IPC分类号： H01L31/0376 ,  H01L31/20

CPC分类号： H01L31/03767 ,  H01L31/03765 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： Alloys of hydrogenated amorphous silicon and germanium are disclosed that exhibit unexpectedly low saturated defect densities, particularly relative to the initial defect densities of the alloys, so as to render them substantially resistant to Staebler-Wronski degradation. The alloys are producible using conventional equipment, but glow-discharge methods are preferred. The preferred amount of germanium in the alloy is about 15 at. % to about 50 at. %. The alloys are particularly useful for making photovoltaic cells. The alloys can be used as intrinsic semiconductors and doped for use as "n" or "p" materials. Methods for making the alloys are also disclosed.

摘要翻译： 公开了氢化非晶硅和锗的合金，其显示出意想不到的低饱和缺陷密度，特别是相对于合金的初始缺陷密度，以使其基本上抵抗Staebler-Wronski降解。 该合金可以使用常规设备生产，但优选辉光放电方法。 合金中锗的优选量为约15英寸。 ％至约50。 ％。 该合金特别适用于制造光伏电池。 该合金可以用作本征半导体并掺杂用作“n”或“p”材料。 还公开了制造合金的方法。

公开(公告)号：US4176170A

公开(公告)日：1979-11-27

申请号：US924188

申请日：1978-07-13

申请人： Horst M. Kasper ,  Benjamin Tell ,  Sigurd Wagner

发明人： Horst M. Kasper ,  Benjamin Tell ,  Sigurd Wagner

IPC分类号： C01B17/00 ,  C01B19/00 ,  H01M4/02 ,  H01M6/18

CPC分类号： C01B17/00 ,  C01B19/002 ,  H01M4/02 ,  H01M6/18 ,  C01P2006/40

摘要： Ionic conductivity in ternary chalcogenides of the form AB.sub.x C.sub.y, where A is a metallic atom with atomic number no greater than 55 which has a +1 oxidation state, B is a group III A metallic atom and C is a group VI A atom, has been observed. This ionic conductivity makes the compounds useful as components in electrochemical cells, e.g., electrolytes and electrodes.

摘要翻译： ABxCy形式的三元硫属化物中的离子电导率，其中A是具有+1氧化态的原子序数不大于55的金属原子，B是IIIA族金属原子，C是VIA原子， 观察到的。 该离子导电性使得化合物可用作电化学电池中的组分，例如电解质和电极。

公开(公告)号：US4108716A

公开(公告)日：1978-08-22

申请号：US752899

申请日：1976-12-22

申请人： Assunta Anna Pritchard ,  Sigurd Wagner

发明人： Assunta Anna Pritchard ,  Sigurd Wagner

IPC分类号： C09K13/04 ,  H01L21/461

CPC分类号： H01L21/461 ,  C09K13/04

摘要： A process for polishing both the cadmium and sulfur face of CdS using buffered HCl solutions has been found to produce very smooth crystal surfaces. Use of HCl solutions buffered to a pH between 2.2 and 2.8 to polish the cadmium face is quite effective. An equally effective polishing agent for the sulfur face is a HCl solution buffered to a pH between 0.7 and 1.3.

摘要翻译： 已经发现使用缓冲的HCl溶液对CdS的镉和硫面进行抛光的方法产生非常光滑的晶体表面。 缓冲到pH2.2和2.8之间的HCl溶液使用镉面来研磨是非常有效的。 用于硫面的同样有效的抛光剂是缓冲至0.7-1.3之间的pH的HCl溶液。

公开(公告)号：US3988172A

公开(公告)日：1976-10-26

申请号：US587042

申请日：1975-06-16

申请人： Klaus Jurgen Bachmann ,  Ernest Buehler ,  Joseph Leo Shay ,  Sigurd Wagner

发明人： Klaus Jurgen Bachmann ,  Ernest Buehler ,  Joseph Leo Shay ,  Sigurd Wagner

IPC分类号： H01L21/00 ,  H01L7/00 ,  H01L31/04

CPC分类号： H01L21/00 ,  Y10S148/003 ,  Y10S148/072 ,  Y10S148/079 ,  Y10S148/12

摘要： Solar cells showing improved efficiency, amounting to about 14 percent for overall solar power conversion, are obtained by annealing InP/CdS solar cells in a slightly reducing atmosphere for about 15 minutes in a temperature range preferably from about 550.degree. centrigrade to about 600.degree. centigrade. In an annealing temperature range from 400.degree. centigrade to 625.degree. centigrade, an inversely dependent adjustment of annealing time is found desirable. The atmosphere preferably comprises mainly a substantially inert component and typically comprises an H.sub.2 + N.sub.2 mixture, such as forming gas (15% H.sub.2 + 85% N.sub.2).

摘要翻译： 通过在稍微还原的气氛中将InP / CdS太阳能电池退火约15分钟，在优选约550摄氏度至约600摄氏度的温度范围内，可获得总体太阳能转换效率达到约14％的太阳能电池。 。 在退火温度范围从400摄氏度到625摄氏度之间，退火时间的反向调整是可取的。 气氛优选主要包括基本上惰性的组分，并且通常包含H 2 + N 2混合物，例如形成气体（15％H 2 + 85％N 2）。

公开(公告)号：US08933468B2

公开(公告)日：2015-01-13

申请号：US13422924

申请日：2012-03-16

申请人： Prashant Mandlik ,  Ruiqing Ma ,  Jeff Silvernail ,  Julia J. Brown ,  Lin Han ,  Sigurd Wagner ,  Luke Walski

发明人： Prashant Mandlik ,  Ruiqing Ma ,  Jeff Silvernail ,  Julia J. Brown ,  Lin Han ,  Sigurd Wagner ,  Luke Walski

IPC分类号： H01L29/18 ,  H01L33/00 ,  H01L27/32 ,  H01L25/075

CPC分类号： H01L51/5253 ,  H01L25/0753 ,  H01L27/3209 ,  H01L51/56 ,  H01L2251/566 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  H01L2924/00

摘要： A first product may be provided that comprises a substrate having a first surface, a first side, and a first edge where the first surface meets the first side; and a device disposed over the substrate, the device having a second side, where at least a first portion of the second side is disposed within 3 mm from the first edge of the substrate. The first product may further comprise a first barrier film that covers at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the device.

摘要翻译： 可以提供第一产品，其包括具有第一表面，第一侧和第一边缘与第一表面相交的第一边缘的基底; 以及设置在所述基板上的装置，所述装置具有第二侧，所述第二侧的至少第一部分设置在距所述基板的第一边缘3mm以内。 第一产品还可以包括覆盖基板的第一边缘的至少一部分，基板的第一侧的至少一部分以及装置的第二侧的至少第一部分的第一阻挡膜。

公开(公告)号：US20060169989A1

公开(公告)日：2006-08-03

申请号：US11332231

申请日：2006-01-17

申请人： Rabin Bhattacharya ,  Sigurd Wagner

发明人： Rabin Bhattacharya ,  Sigurd Wagner

IPC分类号： H01L51/00

CPC分类号： H01L21/469 ,  H01L27/3276 ,  H01L27/3288 ,  H01L51/0021 ,  H01L51/0097 ,  H01L51/52 ,  H01L51/5203 ,  H01L2251/5338 ,  H05K1/0283 ,  Y02E10/549 ,  Y10T428/24628 ,  Y10T428/24851

摘要： A device is provided. The device includes a substrate, an inorganic layer disposed over the substrate, and an organic layer disposed on the inorganic conductive or semiconductive layer, such that the organic layer is in direct physical contact with the inorganic conductive or semiconductive layer. The substrate is deformed such that there is a nominal radial or biaxial strain of at least 0.05% relative to a flat substrate at an interface between the inorganic layer and the organic layer. The nominal radial or biaxial strain may be higher, for example 1.5%. A method of making the device is also provided, such that the substrate is deformed after the inorganic layer and the organic layer are deposited onto the substrate.

摘要翻译： 提供了一种设备。 该器件包括衬底，设置在衬底上的无机层和设置在无机导电或半导体层上的有机层，使得有机层与无机导电或半导体层直接物理接触。 衬底变形，使得在无机层和有机层之间的界面处相对于平坦衬底具有至少0.05％的标称径向或双轴应变。 标称径向或双轴应变可能较高，例如1.5％。 还提供了制造该器件的方法，使得在将无机层和有机层沉积到衬底上之后，衬底变形。

公开(公告)号：US06713329B1

公开(公告)日：2004-03-30

申请号：US10030371

申请日：2002-03-06

申请人： Sigurd Wagner ,  Yu Chen

发明人： Sigurd Wagner ,  Yu Chen

IPC分类号： H01L2100

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L29/04

摘要： A p channel thin-film transistor (TFT) made of directly deposited microcrystalline silicon (uc-Si). The p TFT is integrated with its n channel counterpart on a single uc-Si film, to form a complementary metal-silicon oxide-silicon (CMOS) inverter of deposited uc-Si. The uc-Si channel material can be grown at lower temperatures by plasma-enhanced chemical vapor deposition in a process similar to the deposition. The p and n channels share the same uc-Si layer. The Figure shows the processing steps of manufacturing the TFT, where (12) represents the uc-Si layer of the device.

摘要翻译： 由直接沉积的微晶硅（uc-Si）制成的p沟道薄膜晶体管（TFT）。 p TFT与其n沟道对应器集成在单个uc-Si膜上，以形成沉积的uc-Si的互补金属 - 氧化硅 - 硅（CMOS）反相器。 uc-Si通道材料可以在较低温度下通过等离子体增强化学气相沉积在与沉积相似的工艺中生长。 p和n通道共享相同的uc-Si层。 该图示出了制造TFT的处理步骤，其中（12）表示器件的uc-Si层。

公开(公告)号：US4298250A

公开(公告)日：1981-11-03

申请号：US956391

申请日：1978-10-31

申请人： Gary D. Boyd ,  Sarat K. Mohapatra ,  Benjamin Tell ,  Sigurd Wagner ,  Fred Wudl

发明人： Gary D. Boyd ,  Sarat K. Mohapatra ,  Benjamin Tell ,  Sigurd Wagner ,  Fred Wudl

IPC分类号： G02F1/15 ,  G02F1/17 ,  G02F1/23

CPC分类号： G02F1/1523

摘要： Solid state electrochromic devices are fabricated using, as the electrochromic material, ionic conductors such as heteropoly acids. The properties of the ionic conductors permit construction of a device having only two electrodes and the electrochromic material. In operation, low voltages impressed between the electrodes induce a color change. For example, when phosphotungstic acid is employed, the color change is from white to dark blue. Cycle times as low as 100 msec are achievable and the devices exhibit memory properties.

摘要翻译： 使用诸如杂多酸的离子导体作为电致变色材料制造固态电致变色器件。 离子导体的性质允许构造仅具有两个电极和电致变色材料的装置。 在操作中，在电极之间施加的低电压引起颜色变化。 例如，当使用磷钨酸时，颜色变化是从白色到深蓝色。 可实现低至100毫秒的循环时间，并且器件具有记忆特性。

公开(公告)号：US4180625A

公开(公告)日：1979-12-25

申请号：US935661

申请日：1978-08-21

申请人： Sigurd Wagner

发明人： Sigurd Wagner

IPC分类号： H01G9/20 ,  H01M14/00 ,  H01M6/30 ,  H01M6/36

CPC分类号： H01G9/20 ,  H01M14/005

摘要： Liquid-semiconductor photocells have received much attention recently as candidates for use in solar power conversion devices. A semiconductor liquid junction photovoltaic cell having a photoactive electrode made from CuInS.sub.2 and a liquid electrolyte containing a redox couple consisting of S.sub.2 .dbd./S.dbd. anions has been found to produce a stable photocurrent output.

摘要翻译： 近来，液体半导体光电池作为用于太阳能转换装置的候选者已经受到很多关注。 已经发现具有由CuInS 2制成的光活性电极和含有由S2 = / S =阴离子组成的氧化还原电极的液体电解质的半导体液体结光伏电池产生稳定的光电流输出。

公开(公告)号：US4039357A

公开(公告)日：1977-08-02

申请号：US718386

申请日：1976-08-27

申请人： Klaus Jurgen Bachmann ,  Manfred Hermann Bettini ,  Ernest Buehler ,  Joseph Leo Shay ,  Sigurd Wagner

发明人： Klaus Jurgen Bachmann ,  Manfred Hermann Bettini ,  Ernest Buehler ,  Joseph Leo Shay ,  Sigurd Wagner

IPC分类号： C30B29/50 ,  C23C16/02 ,  H01L21/306 ,  H01L21/363 ,  H01L21/365 ,  H01L29/04 ,  H01L29/267 ,  H01L31/04 ,  H01L31/072 ,  H01L31/18 ,  H01L21/205 ,  H01L21/302 ,  H01L31/06

CPC分类号： C23C16/0236 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02557 ,  H01L21/02576 ,  H01L21/02631 ,  H01L21/30612 ,  H01L29/04 ,  H01L29/267 ,  H01L31/072 ,  H01L31/18 ,  Y02E10/50 ,  Y10S148/065

摘要： A hydrogen transport process for cleaning the surface of an indium or gallium based semiconductor material and for depositing n-type cadmium sulfide on the cleaned semiconductor material is disclosed. The cleaning and deposition can be accomplished in sequence or simultaneously. The process entails adding hydrogen sulfide to a hydrogen gas flow in a chemical vapor deposition process. Single crystalline photovoltaic cells of p-InP/n-CdS with a 13.5% efficiency have been reproducibly fabricated. An efficiency of 4.6% has been obtained with a thin layer polycrystalline p-InP/n-CdS cell. Additionally, a p-GaAs/n-CdS heterodiode cell has been produced.

摘要翻译： 公开了用于清洁铟或镓基半导体材料的表面并用于在清洁的半导体材料上沉积n型硫化镉的氢输送过程。 清洗和沉积可以顺序或同时完成。 该方法需要在化学气相沉积工艺中向氢气流中加入硫化氢。 已经重复制造了具有13.5％效率的p-InP / n-CdS的单晶光伏电池。 利用薄层多晶p-InP / n-CdS电池获得了4.6％的效率。 另外，已经生产了p-GaAs / n-CdS异二极管电池。