公开(公告)号：US06534375B2

公开(公告)日：2003-03-18

申请号：US09923406

申请日：2001-08-08

申请人： Shinpei Iijima ,  Yuzuru Ohji ,  Masato Kunitomo ,  Masahiko Hiratani ,  Yuichi Matsui ,  Hiroyuki Ohta ,  Yukihiro Kumagai

发明人： Shinpei Iijima ,  Yuzuru Ohji ,  Masato Kunitomo ,  Masahiko Hiratani ,  Yuichi Matsui ,  Hiroyuki Ohta ,  Yukihiro Kumagai

IPC分类号： H01L21285

CPC分类号： H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02356 ,  H01L21/31637 ,  H01L27/10814 ,  H01L27/10855 ,  H01L28/60 ,  H01L28/91

摘要： A disadvantage upon heat treatment in an oxygen atmosphere of a dielectric film formed on a lower electrode of capacitance device of DRAM that oxygen permeating the lower electrode oxidizes a barrier layer to form an oxide layer of high resistance and low dielectric constant is prevented. An Ru silicide layer is formed on the surface of a plug in a through hole formed below a lower electrode for an information storage capacitance device C and an Ru silicon nitride layer is formed further on the surface of the Ru silicide layer. Upon high temperature heat treatment in an oxygen atmosphere conducted in the step of forming a dielectric film on the lower electrode, the Ru silicon nitride layer is oxidized sacrificially into an Ru silicon oxynitride to prevent progress of oxidation in the Ru silicide layer.

摘要翻译： 形成在DRAM的电容元件的下部电极上形成的电介质膜的氧气氛中的氧气的缺点是氧气渗透下部电极氧化阻挡层以形成高电阻和低介电常数的氧化物层。 在形成在信息容纳电容元件C的下部电极下方的通孔中的插塞表面上形成Ru Ru硅化物层，并且在Ru硅化物层的表面上进一步形成Ru氮化硅层。 在下电极上形成电介质膜的步骤中进行的氧气氛中进行高温热处理时，将Ru氮化硅层牺牲性氧化为Ru氮氧化硅，以防止Ru化硅化物层的氧化进行。

公开(公告)号：US06235572B1

公开(公告)日：2001-05-22

申请号：US09334625

申请日：1999-06-17

申请人： Masato Kunitomo ,  Shinpei Iijima

发明人： Masato Kunitomo ,  Shinpei Iijima

IPC分类号： H01L218242

CPC分类号： H01L21/02183 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02356 ,  H01L21/31604 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10894 ,  H01L28/56 ,  H01L28/84 ,  H01L28/91

摘要： A semiconductor device includes a DRAM having a memory cell constructed by an information storage capacitor C which is comprised of a lower electrode 54 made of a ruthenium film and an upper electrode 62 made of a capacity insulating film 61 and a titanium nitride film and which is connected in series with a memory cell selection MISFET Qs formed on the main surface of a semiconductor substrate 1. The capacity insulating film 61 is made of a multi layered film comprising two layered crystallized tantalum oxide films 56 and 58 each having a film thickness of 10 nm or less. The film thickness of the capacity insulating film 61 is set to 10 to 40 nm.

摘要翻译： 半导体器件包括具有由信息存储电容器C构成的存储单元的DRAM，该信息存储电容器C包括由钌膜制成的下电极54和由电容绝缘膜61和氮化钛膜制成的上电极62， 与形成在半导体基板1的主表面上的存储单元选择MISFET Qs串联连接。电容绝缘膜61由包括两层结晶的氧化钽膜56和58的多层膜制成，每层具有膜厚度为10 nm以下。 电容绝缘膜61的膜厚设定为10〜40nm。

公开(公告)号：US4785342A

公开(公告)日：1988-11-15

申请号：US8325

申请日：1987-01-29

申请人： Toshiaki Yamanaka ,  Yoshio Sakai ,  Shinpei Iijima ,  Osamu Minato ,  Shigeru Honjyo

发明人： Toshiaki Yamanaka ,  Yoshio Sakai ,  Shinpei Iijima ,  Osamu Minato ,  Shigeru Honjyo

IPC分类号： H01L27/11 ,  G11C11/41 ,  H01L21/8244 ,  H01L27/10 ,  H01L27/102 ,  H01L29/04 ,  H01L29/40 ,  H01L49/02

CPC分类号： H01L27/1025

摘要： A resistance element having a reduced occupied area and a high resistance which may be employed as a load resistor used in, for example, a static memory device. A high-resistance area is formed using a relatively thin film, while an interconnection area is formed using a relatively thick film, and these films are provided in such a manner that the thin film is in contact with the upper side of the thick film (the relatively thick film is a first-level film, and the relatively thin film is a second-level film).

摘要翻译： 具有减小的占用面积和高电阻的电阻元件，其可以用作例如静态存储器件中使用的负载电阻器。 使用相对薄的膜形成高电阻区域，而使用相对厚的膜形成互连区域，并且这些膜以这样的方式设置，使得薄膜与厚膜的上侧接触（ 相对厚的膜是第一级膜，相对薄膜是第二级膜）。

公开(公告)号：US08278172B2

公开(公告)日：2012-10-02

申请号：US12850092

申请日：2010-08-04

申请人： Hiroyuki Fujimoto ,  Shinpei Iijima

发明人： Hiroyuki Fujimoto ,  Shinpei Iijima

IPC分类号： H01L21/336 ,  H01L21/28

CPC分类号： H01L27/10876 ,  H01L21/76897 ,  H01L27/10823 ,  H01L27/10855 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/861

摘要： A method of forming a semiconductor device includes the following processes. A pillar is formed which stands on a semiconductor substrate. A first insulating film is formed which covers a side surface of the pillar. An upper portion of the first insulating film is removed to expose a side surface of an upper portion of the pillar. A contact plug is formed, which contacts the side surface of the upper portion of the pillar and a top surface of the pillar.

摘要翻译： 形成半导体器件的方法包括以下处理。 在半导体衬底上形成立柱。 形成覆盖柱的侧面的第一绝缘膜。 去除第一绝缘膜的上部以暴露柱的上部的侧表面。 形成接触插塞，其接触柱的上部的侧表面和柱的顶表面。

公开(公告)号：US07382014B2

公开(公告)日：2008-06-03

申请号：US11434877

申请日：2006-05-17

申请人： Shinpei Iijima

发明人： Shinpei Iijima

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/91 ,  H01L21/02183 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02356 ,  H01L21/3141 ,  H01L21/31637 ,  H01L21/318 ,  H01L27/10852 ,  H01L27/10894

摘要： A semiconductor device with a capacitor includes a lower electrode, a dielectric and an upper electrode on the dielectric layer. The dielectric layer including more than one polycrystalline tantalum oxide layer and more than one separation layer, wherein the polycrystalline tantalum oxide layers and the separation layers are alternately stacked, while one of the polycrystalline tantalum oxide layers is a lowermost layer among the stacked layers.

摘要翻译： 具有电容器的半导体器件包括在电介质层上的下电极，电介质和上电极。 所述介电层包括多于一个的多晶氧化钽层和多于一个的分离层，其中所述多晶钽氧化物层和所述分离层交替堆叠，而所述多晶钽氧化物层中的一个是所述堆叠层中的最下层。

公开(公告)号：US20060102983A1

公开(公告)日：2006-05-18

申请号：US11268558

申请日：2005-11-08

申请人： Shinpei Iijima

发明人： Shinpei Iijima

IPC分类号： H01L29/00

CPC分类号： H01L21/02181 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3142 ,  H01L21/3162 ,  H01L21/31645 ,  H01L28/40

摘要： A stacked capacitor in a memory cell has a bottom electrode made of a metal or metal compound, a capacitor insulation film and a top electrode made of a metal or a metal compound. The capacitor insulation film includes an aluminum oxide film having a thickness of 2 to 4 nm and in contact with the bottom electrode, and an overlying hafnium oxide film having a thickness of 3 to 6 nm. The stacked capacitor has a higher resistance against a biased temperature test.

摘要翻译： 存储单元中的堆叠电容器具有由金属或金属化合物制成的底部电极，电容器绝缘膜和由金属或金属化合物制成的顶部电极。 电容器绝缘膜包括厚度为2至4nm并与底部电极接触的氧化铝膜和厚度为3至6nm的上覆氧化铪膜。 堆叠式电容器对偏置温度测试具有较高的电阻。

公开(公告)号：US06649465B2

公开(公告)日：2003-11-18

申请号：US09943506

申请日：2001-08-31

申请人： Shinpei Iijima ,  Satoshi Yamamoto

发明人： Shinpei Iijima ,  Satoshi Yamamoto

IPC分类号： H01L218242

CPC分类号： H01L28/60 ,  H01L27/10814 ,  H01L27/10885 ,  H01L28/55 ,  H01L28/91

摘要： A technique is provided which is capable of forming a Ru film constituting a lower electrode of an information storing capacitive element in an aperture with high precision. After a Ru film is deposited, heat treatment is performed in a reducing atmosphere on a side wall and a bottom portion of a deep aperture in which the information storing capacitive element is formed. The deposition and heating of Ru films can be repeated to form a laminated structure of Ru films. As a result, it is possible to effectively remove impurities included in the Ru film, and to achieve fineness of the Ru film.

摘要翻译： 提供了能够以高精度形成构成孔的信息存储电容元件的下电极的Ru膜的技术。 在沉积Ru膜之后，在形成有信息存储电容元件的深孔的侧壁和底部的还原气氛中进行热处理。 可以重复Ru膜的沉积和加热以形成Ru膜的层压结构。 结果，可以有效地除去Ru膜中所含的杂质，并且实现Ru膜的细度。

公开(公告)号：US08492814B2

公开(公告)日：2013-07-23

申请号：US13592865

申请日：2012-08-23

申请人： Hiroyuki Fujimoto ,  Shinpei Iijima

发明人： Hiroyuki Fujimoto ,  Shinpei Iijima

IPC分类号： H01L27/06

CPC分类号： H01L27/10876 ,  H01L21/76897 ,  H01L27/10823 ,  H01L27/10855 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/861

摘要： A method of forming a semiconductor device includes the following processes. A pillar is formed which stands on a semiconductor substrate. A first insulating film is formed which covers a side surface of the pillar. An upper portion of the first insulating film is removed to expose a side surface of an upper portion of the pillar. A contact plug is formed, which contacts the side surface of the upper portion of the pillar and a top surface of the pillar.

摘要翻译： 形成半导体器件的方法包括以下处理。 在半导体衬底上形成立柱。 形成覆盖柱的侧面的第一绝缘膜。 去除第一绝缘膜的上部以暴露柱的上部的侧表面。 形成接触插塞，其接触柱的上部的侧表面和柱的顶表面。

公开(公告)号：US07811895B2

公开(公告)日：2010-10-12

申请号：US12464209

申请日：2009-05-12

申请人： Shinpei Iijima

发明人： Shinpei Iijima

IPC分类号： H01L21/20

CPC分类号： H01L21/02181 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3142 ,  H01L21/3162 ,  H01L21/31645 ,  H01L28/40

摘要： A stacked capacitor in a memory cell has a bottom electrode made of a metal or metal compound, a capacitor insulation film and a top electrode made of a metal or a metal compound. The capacitor insulation film includes an aluminum oxide film having a thickness of 2 to 4 nm and in contact with the bottom electrode, and an overlying hafnium oxide film having a thickness of 3 to 6 nm. The stacked capacitor has a higher resistance against a biased temperature test.

摘要翻译： 存储单元中的堆叠电容器具有由金属或金属化合物制成的底部电极，电容器绝缘膜和由金属或金属化合物制成的顶部电极。 电容器绝缘膜包括厚度为2至4nm并与底部电极接触的氧化铝膜和厚度为3至6nm的上覆氧化铪膜。 堆叠式电容器对偏置温度测试具有较高的电阻。

公开(公告)号：US07498601B2

公开(公告)日：2009-03-03

申请号：US11563660

申请日：2006-11-27

申请人： Tsutomu Hayakawa ,  Shinpei Iijima

发明人： Tsutomu Hayakawa ,  Shinpei Iijima

IPC分类号： H01L29/04

CPC分类号： H01L45/1233 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： A phase-change memory device has a phase-change layer, a heater electrode having an end held in contact with the phase-change layer, a contact plug of different kinds of material having a first electrically conductive material plug made of a first electrically conductive material and held in contact with the other end of the heater electrode, and a second electrically conductive material plug made of a second electrically conductive material having a specific resistance smaller than the first electrically conductive material, the first electrically conductive material plug and the second electrically conductive material plug being stacked in one contact hole, the heater electrode and the second electrically conductive material plug being held in contact with each other in overlapping relation to each other, and an electrically conductive layer electrically connected to the second electrically conductive material plug.

摘要翻译： 相变存储器件具有相变层，具有与相变层保持接触的端部的加热器电极，具有由第一导电材料制成的第一导电材料塞的不同种类的材料的接触塞 材料并与加热器电极的另一端保持接触;以及第二导电材料塞，其由具有比第一导电材料小的电阻率的第二导电材料制成，第一导电材料塞和第二导电材料塞 导电材料塞被堆叠在一个接触孔中，所述加热器电极和所述第二导电材料塞彼此重叠地保持彼此接触;以及导电层，电连接到所述第二导电材料塞。