公开(公告)号：US5977697A

公开(公告)日：1999-11-02

申请号：US6347

申请日：1998-01-13

Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

IPC: H01J31/12 ,  H01J1/304 ,  H01J9/02 ,  H01J23/06 ,  H01J29/04 ,  H01J1/30

CPC classification number: H01J23/06 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J61/0677 ,  H01J61/0737

Abstract: Improved diamond particle emitters, useful for flat panel displays, are fabricated by suspending nanometer-sized ultra-fine particles in a solution, applying the suspension as a coating onto a conducting substrate such as n-type Si or metal, subjecting the coated substrate to a plasma of hydrogen, and applying a thin, conformal diamond overcoating layer onto the particles. The resulting emitters show excellent emission properties, such as extremely low turn-on voltage, good uniformity and high current densities. In particular, the electron emitters are capable of producing electron emission current densities of at least 0.1 mA/,mm.sup.2 at extremely low vacuum electric fields of 0.2-3.0 V/.mu.m V/.mu.m. These field values are about an order of magnitude lower than exhibited by the best defective CVD diamond and almost two orders of magnitude lower than p-type semiconducting diamond. It is further found that the emission characteristics remain the same even after the plasma treated diamond surface is exposed to air for several months.

Abstract translation: 用于平板显示器的改进的金刚石颗粒发射器通过将纳米尺寸的超细颗粒悬浮在溶液中来制造，将悬浮液作为涂层施涂到诸如n型Si或金属的导电基材上，使经涂覆的基材 氢的等离子体，并将薄的保形金刚石外涂层施加到颗粒上。 所得到的发射体显示出优异的发射特性，例如极低的导通电压，良好的均匀性和高的电流密度。 特别地，电子发射体在0.2-3.0V / m V /μm的极低真空电场下能够产生至少0.1mA / mm2的电子发射电流密度。 这些场值比由最好的有缺陷的CVD金刚石显示的低一个数量级，比p型半导体金刚石低两个数量级。 进一步发现即使在等离子体处理的金刚石表面暴露于空气几个月之后，发射特性也保持不变。

公开(公告)号：US5903098A

公开(公告)日：1999-05-11

申请号：US779223

申请日：1997-01-06

Applicant: Gary W. Jones

Inventor： Gary W. Jones

IPC: G01R33/10 ,  G02B27/00 ,  G02B27/01 ,  G02B27/22 ,  G09G3/00 ,  H01J3/02 ,  H01J9/02 ,  H01J9/24 ,  H01J29/94 ,  H01J31/12 ,  H04N5/70 ,  H04N5/74 ,  H04N13/00 ,  H01J1/30

CPC classification number: G09G3/003 ,  G01R33/10 ,  G02B27/017 ,  G02B27/0172 ,  G02B27/0176 ,  G02B27/2235 ,  G09G3/02 ,  H01J29/94 ,  H01J3/022 ,  H01J31/127 ,  H01J9/025 ,  H04N13/0422 ,  H04N13/0438 ,  H04N13/044 ,  H04N13/0459 ,  H04N13/0497 ,  H04N5/7408 ,  G02B2027/0132 ,  G02B2027/0136 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/00 ,  H04N13/0059 ,  H04N13/0285 ,  H04N13/0427 ,  H04N13/0456 ,  H04N5/70 ,  H04N5/7491

Abstract: A field emitter array device includes a ceramic substrate member having a multiplicity of through conductive vias therein. An insulative material layer is located on the ceramic substrate member. An addressable array of gate and emitter line elements is located on the insulative material and is conductively coupled to the through substrate conductive vias. A backside connector is located on the ceramic substrate member and conductively coupled to the vias for connection of the ceramic substrate member with an array driver device for the addressable array of emitter and gate line elements. A field emitter array of field emitter elements on the insulative material layer of the ceramic substrate member which are operatively coupled with the addressable array of gate and emitter line elements.

Abstract translation: 场致发射体阵列器件包括其中具有多个通孔的陶瓷衬底构件。 绝缘材料层位于陶瓷基板部件上。 栅极和发射极线元件的可寻址阵列位于绝缘材料上并与导电通孔导电耦合。 背面连接器位于陶瓷基板构件上并且导电地耦合到通孔，用于将陶瓷基板构件与用于可寻址阵列的发射极和栅极线路元件的阵列驱动器装置连接。 在陶瓷衬底构件的绝缘材料层上的场发射极元件的场发射极阵列，其与栅极和发射极线元件的可寻址阵列可操作地耦合。

公开(公告)号：US5844252A

公开(公告)日：1998-12-01

申请号：US690173

申请日：1996-07-25

Applicant: Hiromu Shiomi ,  Yoshiki Nishibayashi ,  Tadashi Tomikawa ,  Shin-ichi Shikata

Inventor： Hiromu Shiomi ,  Yoshiki Nishibayashi ,  Tadashi Tomikawa ,  Shin-ichi Shikata

IPC: H01J1/304 ,  H01J1/02 ,  H01J1/14

CPC classification number: H01J1/3042 ,  H01J2201/30457

Abstract: A field emission device according to the present invention comprises a support substrate; a cathode mounted on a surface of said support substrate; a first diamond portion located on any surface of said substrate, said first diamond portion substantially having an electrical connection with said cathode; a second diamond portion located on the substrate surface on which said first diamond portion is also located, said second diamond portion including plurality of diamond protuberances; and an anode positioned spaced apart from said first and second diamond portions, wherein a space is formed between said anode and said second diamond portion.

Abstract translation: 根据本发明的场致发射器件包括支撑衬底; 阴极，其安装在所述支撑基板的表面上; 位于所述衬底的任何表面上的第一金刚石部分，所述第一金刚石部分基本上与所述阴极电连接; 位于所述第一金刚石部分也位于所述基底表面上的第二金刚石部分，所述第二金刚石部分包括多个金刚石突起; 以及与所述第一和第二金刚石部分间隔开的阳极，其中在所述阳极和所述第二金刚石部分之间形成空间。

公开(公告)号：US5813892A

公开(公告)日：1998-09-29

申请号：US678565

申请日：1996-07-12

Applicant: Christopher J. Spindt ,  John M. Macaulay

Inventor： Christopher J. Spindt ,  John M. Macaulay

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

Abstract: A gated electron-emitter is fabricated according to the process in which charged particles are directed towards a track-susceptible layer (48) to form charged-particle tracks (50B.sub.1) through the track-susceptible layer. Apertures (52.sub.1) are formed through the track-susceptible layer by etching along the charged-particle tracks. A gate layer (46) is etched through the apertures to form gate openings (54.sub.1) through the gate layer. An insulating layer (24) is etched through the gate openings to form dielectric open spaces (56.sub.1, 94.sub.1, 106.sub.1, or 114.sub.1) through the insulating layer down to a resistive layer (22B) of an underlying conductive region (22). Electron-emissive elements (30B, 30/88D.sub.1, 98/102.sub.1, or 118.sub.1) are formed in the dielectric open spaces over the resistive layer.

Abstract translation: 根据其中带电粒子指向轨道敏感层（48）以通过轨道敏感层形成带电粒子轨迹（50B1）的工艺制造门控电子发射器。 通过沿着带电粒子轨迹的蚀刻，通过轨道敏感层形成孔径（521）。 通过孔径蚀刻栅极层（46），以形成通过栅极层的栅极开口（541）。 通过栅极开口蚀刻绝缘层（24），以形成通过绝缘层的下行导电区域（22）的电阻层（22B）的电介质开放空间（561,941,1061或1141）。 在电阻层上的电介质开放空间中形成电子发射元件（30B，30 / 88D1,98 / 1011或1181）。

公开(公告)号：US5757344A

公开(公告)日：1998-05-26

申请号：US953847

申请日：1992-09-30

Applicant: Koichi Miyata ,  Kozo Nishimura ,  Koji Kobashi

Inventor： Koichi Miyata ,  Kozo Nishimura ,  Koji Kobashi

IPC: H01L49/00 ,  H01J1/304 ,  H01J9/02 ,  H01J1/14

CPC classification number: H01J3/022 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30457

Abstract: Disclosed is planar and vertical cold cathode emitter elements including an semiconducting diamond emitter portion having a high thermal resistance and a high breakdown voltage, thereby suppressing the deterioration of the electron emission characteristics and enabling the operation with a high electric power.

Abstract translation: 公开了包括具有高热阻和高击穿电压的半导体金刚石发射极部分的平面和垂直冷阴极发射体元件，从而抑制电子发射特性的劣化并且能够以高功率进行操作。

公开(公告)号：US5744195A

公开(公告)日：1998-04-28

申请号：US752234

申请日：1996-11-19

Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Lawrence Seibles ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Lawrence Seibles ,  Wei Zhu

IPC: C30B29/04 ,  C30B30/02 ,  C30B31/20 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L21/205 ,  C23C16/26 ,  B05D3/06

CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

Abstract: Applicants have discovered methods for making, treating and using diamonds which substantially enhance their capability for low voltage emission. Specifically, applicants have discovered that defect-rich diamonds--diamonds grown or treated to increase the concentration of defects--have enhanced properties of low voltage emission. Defect-rich diamonds are characterized in Raman spectroscopy by a diamond peak at 1332 cm.sup.-1 broadened by a full width at half maximum .DELTA.K in the range 5-15 cm.sup.-1 (and preferably 7-11 cm.sup.-1). Such defect-rich diamonds can emit electron current densities of 0.1 mA/mm.sup.2 or more at a low applied field of 25 V/.mu.m or less. Particularly advantageous structures use such diamonds in an array of islands or particles each less than 10 .mu.m in diameter at fields of 15 V/.mu.m or less.

Abstract translation: 申请人已经发现了用于制造，处理和使用金刚石的方法，其大大增强了它们的低电压发射能力。 具体来说，申请人已经发现，生长或处理以增加缺陷浓度的富含缺陷的钻石 - 金刚石具有增强的低电压发射性能。 富含缺陷的金刚石的特征在于在1332cm-1处的金刚石峰，在5-15cm -1（优选7-11cm -1）的范围内以最大DELTA K的全宽度加宽的拉曼光谱。 这样的富含缺陷的金刚石可以在25V /μm以下的低施加电场下发射0.1mA / mm 2以上的电子密度。 特别有利的结构在15V /μm或更小的场中使用直径小于10μm的岛或颗粒阵列中的这种金刚石。

公开(公告)号：US5614353A

公开(公告)日：1997-03-25

申请号：US485954

申请日：1995-06-07

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: H01J9/02 ,  H01J17/06 ,  H01J19/02 ,  H01J29/04 ,  H01J31/12 ,  H04N1/00 ,  G03F7/00

CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/30457

Abstract: A method is provided for fabricating a display cathode which includes forming a conductive line adjacent a face of a substrate. A region of amorphic diamond is formed adjacent a selected portion of the conductive line.

公开(公告)号：US5602439A

公开(公告)日：1997-02-11

申请号：US196343

申请日：1994-02-14

Applicant: Steven M. Valone

Inventor： Steven M. Valone

IPC: H01J1/304 ,  H01J1/02

CPC classification number: H01J1/304 ,  H01J2201/30457

Abstract: A field emission electron emitter comprising an electrode of diamond and a conductive carbon, e.g., graphite, is provided.

Abstract translation: 提供了包括金刚石电极和导电碳（例如石墨）的场发射电子发射器。

公开(公告)号：US5600200A

公开(公告)日：1997-02-04

申请号：US479268

申请日：1995-06-07

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12 ,  H01J61/067 ,  H01J63/00 ,  H01J63/06 ,  H01J1/30

CPC classification number: H01J63/06 ,  H01J1/304 ,  H01J1/3042 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/00 ,  H01J9/027 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2329/00 ,  H01J2329/8625 ,  Y10T428/292

Abstract: A field emission cathode for use in flat panel displays comprises a layer of conductive material and a layer of amorphic diamond film, functioning as a low effective work-function material, deposited over the conductive material to form emission sites. The emission sites each contain at least two sub-regions having differing electron affinities. The cathode may be used to form a computer screen or a fluorescent light source.

Abstract translation: 用于平板显示器的场发射阴极包括沉积在导电材料上以形成发射部位的导电材料层和用作低有效功函数材料的非晶金刚石膜层。 发射部位各自含有至少两个具有不同电子亲和力的亚区域。 阴极可用于形成计算机屏幕或荧光光源。

公开(公告)号：US5578185A

公开(公告)日：1996-11-26

申请号：US383408

申请日：1995-01-31

Applicant: David L. Bergeron ,  John M. Macaulay ,  Roger W. Barton ,  Jeffrey D. Morse

Inventor： David L. Bergeron ,  John M. Macaulay ,  Roger W. Barton ,  Jeffrey D. Morse

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  C25D5/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

Abstract: A method is provided for creating gated filament structures for a field emission display. A multi-layer structure is provided that includes a substrate, an insulating layer, a metal gate layer positioned on a top surface of the insulating layer and a gate encapsulation layer positioned on a top surface of the metal gate layer. A plurality of gates are provided and define a plurality of apertures on the top of the insulating layer. A plurality of spacers are formed in the apertures at their edges on the top surface of the insulating layer. The spacers are used as masks for etching the insulating layer and form a plurality of pores in the insulating layer. The pores are plated with a filament material to create a plurality of filaments. The pores can be overplated to create the plurality of filaments. The filaments are vertically self-aligned in the pores.

Abstract translation: 提供了一种用于产生用于场致发射显示器的门控灯丝结构的方法。 提供了一种多层结构，其包括基板，绝缘层，位于绝缘层的顶表面上的金属栅极层和位于金属栅极层顶表面上的栅极封装层。 提供多个栅极并且在绝缘层的顶部上限定多个孔。 在绝缘层的顶表面上的边缘处的孔中形成多个间隔物。 间隔物用作蚀刻绝缘层并在绝缘层中形成多个孔的掩模。 用细丝材料电镀细孔以产生多根长丝。 孔可以被过度铺展以产生多根细丝。 细丝在孔中垂直自对准。