公开(公告)号：US3814968A

公开(公告)日：1974-06-04

申请号：US22551772

申请日：1972-02-11

Applicant: LUCAS INDUSTRIES LTD

Inventor： NATHANSON H ,  THOMAS R ,  GULDBERG J

IPC: H01J1/304 ,  H01J1/32 ,  H01J1/34 ,  H01J1/35 ,  H01J9/02 ,  H01J9/12 ,  H01J31/48 ,  H01J31/49 ,  H01J39/06 ,  H01J39/16

CPC classification number: H01J1/34 ,  H01J1/304 ,  H01J9/12 ,  H01J31/48 ,  H01J31/49 ,  H01J2201/3423 ,  Y10S257/917

Abstract: A solid state radiation sensitive field emitter cathode comprising a single crystal semiconductor member having a body portion with a uniform array of closely spaced and very sharp electron emitting projections from one surface in the form of needles or whisker like members. Electrons are emitted into vacuum when a planar-parallel positive anode is mounted in close proximity to the surface. The cathode is responsive to input radiation such as electrons or light directed onto the cathode in modifying the electron emission from the array of electron emitter projections. The method of manufacturing the cathode by providing a predetermined pattern or mosaic of islands of a material exhibiting a greater etch resistant property than the semiconductor material, on a wafer of a semiconductor material and then etching out between and beneath the islands to undercut to a point where the islands are supported by only a small whisker of the semiconductor material. Removal of the islands results in an electron emitter being exposed from beneath each island wherein carriers generated within the body portion and also carriers generated within the depletion regions of the tips diffuse to the electron emitter projections wherein establishment of a high electric field at the tips of the electron emitter projections results in electron emission primarily due to conduction band tunneling. The device provides about 106 emitting points of close proximity so as to effect photographic-like imaging.

Abstract translation: 一种固态辐射敏感场发射器阴极，其包括单晶半导体部件，该单晶半导体部件具有主体部分，其具有从针状或晶须状部件形式的一个表面以紧密间隔且非常尖锐的电子发射突起的均匀阵列。 当平面平行正极安装在表面附近时，电子发射成真空。 阴极响应于输入辐射，例如电子或指向阴极的光，以修改来自电子发射体投影阵列的电子发射。 通过在半导体材料的晶片上提供在半导体材料的晶片上提供具有比半导体材料更大的抗蚀刻性能的材料的岛的预定图案或镶嵌的制造阴极的方法，然后在岛之间和之下蚀刻以切割到点 其中岛仅由半导体材料的小晶须支撑。 去除岛导致电子发射体从每个岛下面暴露，其中在体部分内产生的载流子以及在尖端的耗尽区内产生的载流子扩散到电子发射体突起，其中在尖端处建立高电场 电子发射器投影导致电子发射主要是由于导带隧穿。 该装置提供约106个发射点的紧密接近，以便实现照相式成像。

公开(公告)号：US3644770A

公开(公告)日：1972-02-22

申请号：US3644770D

申请日：1968-01-18

Applicant: VARIAN ASSOCIATES

Inventor： BELL RONALD L

IPC: H01J1/34 ,  H01J39/06 ,  H01J31/50

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A junction-type photoemitter is disclosed. The photoemitter includes a heavily doped P-type semiconductive substrate for absorbing photons of radiation to be converted into electrons to be emitted. An alkali metal layer such as cesium metal is formed over the substrate member for filling the surface energy states of the P-semiconductive substrate. Finally, a layer of cesium oxide is formed over the alkali metal layer to provide a low-work function surface facing the vacuum into which the electrons are emitted from the photoemitter. The substrate member may be made of a III-V compound semiconductor or an alloy of two different III-V compound semiconductors (each compound semiconductor including one element from the third group of Periodic Table and another element of the fifth group of the Periodic Table) to provide a semiconductive band-gap energy which is equal to or slightly more than the work function of the cesium oxide layer. The P-type semiconductive substrate member is heavily doped with a concentration of acceptor dopant greater than 3 X 1018 acceptors per cubic centimeter. Likewise, the cesium oxide layer is heavily doped with donor atoms of cesium to provide the relatively low-work function characteristic of such material. In a preferred embodiment, the P-semiconductive substrate is formed of InP or an alloy of InP and InAs. The photoemitter has improved conversion efficiency in the wavelength range from 0.5 microns to 1.37 microns wavelength.

公开(公告)号：US3387161A

公开(公告)日：1968-06-04

申请号：US50849965

申请日：1965-11-18

Applicant: PHILIPS CORP

Inventor： LAAR JOHANNES VAN ,  JAN SCHEER JACOB

IPC: H01J1/34 ,  H01J29/38 ,  H01J40/06

CPC classification number: H01J40/06 ,  H01J1/34 ,  H01J29/38 ,  H01J2201/3423 ,  Y10S148/12

公开(公告)号：US07816866B2

公开(公告)日：2010-10-19

申请号：US11585936

申请日：2006-10-25

Applicant: Kazutoshi Nakajima ,  Minoru Niigaki ,  Tomoko Mochizuki ,  Toru Hirohata

Inventor： Kazutoshi Nakajima ,  Minoru Niigaki ,  Tomoko Mochizuki ,  Toru Hirohata

IPC: H01J40/06 ,  H01J37/08 ,  G21K5/10 ,  H01L29/12

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A semiconductor photocathode 1 includes: a transparent substrate 11; a first electrode 13, formed on the transparent substrate 11 and enabling passage of light that has been transmitted through the transparent substrate 11; a window layer 14, formed on the first electrode 13 and formed of a semiconductor material with a thickness of no less than 10 nm and no more than 200 nm; a light absorbing layer 15, formed on the window layer 14, formed of a semiconductor material that is lattice matched to the window layer 14, is narrower in energy band gap than the window layer 14, and in which photoelectrons are excited in response to the incidence of light; an electron emission layer 16, formed on the light absorbing layer 15, formed of a semiconductor material that is lattice matched to the light absorbing layer 15, and emitting the photoelectrons excited in the light absorbing layer 15 to the exterior from a surface; and a second electrode 18, formed on the electron emission layer.

Abstract translation: 半导体光电阴极1包括：透明基板11; 第一电极13，其形成在透明基板11上，并能透过透明基板11的光通过; 窗口层14，其形成在第一电极13上并且由不小于10nm且不大于200nm的厚度的半导体材料形成; 形成在与窗口层14格子匹配的半导体材料的窗口层14上的光吸收层15的能带隙比窗口层14更窄，并且其中光电子响应于 光的发生; 由与光吸收层15晶格匹配的半导体材料形成的光吸收层15上形成的电子发射层16，并且将从光吸收层15激发的光电子从表面发射到外部; 以及形成在电子发射层上的第二电极18。

公开(公告)号：US07525131B2

公开(公告)日：2009-04-28

申请号：US11511497

申请日：2006-08-29

Applicant: Masatomo Sumiya ,  Shunro Fuke ,  Tokuaki Nihashi ,  Minoru Hagino

Inventor： Masatomo Sumiya ,  Shunro Fuke ,  Tokuaki Nihashi ,  Minoru Hagino

IPC: H01L29/732 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/06 ,  H01L29/12 ,  H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L27/15 ,  H01L33/00 ,  H01L29/74 ,  H01L31/062 ,  H01L31/00

CPC classification number: H01L31/09 ,  H01J2201/3423 ,  H01L31/0304 ,  Y02E10/544

Abstract: Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in a thickness direction, the second group III nitride semiconductor layer having an Al composition higher than that of the first group III nitride semiconductor layer.

Abstract translation: 公开了一种光电表面，包括：根据紫外线的入射产生光电子的第一III族氮化物半导体层; 以及第二III族氮化物半导体层，其与第一III族氮化物半导体层相邻并且由在厚度方向上具有c轴取向的薄膜晶体构成，所述第二III族氮化物半导体层的Al组成高于 的第一III族氮化物半导体层。

公开(公告)号：US20060081770A1

公开(公告)日：2006-04-20

申请号：US10969379

申请日：2004-10-19

Applicant: Michael Buchin

Inventor： Michael Buchin

IPC: H01L25/00

CPC classification number: H01J31/507 ,  H01J2201/3423 ,  H01J2231/50073 ,  H01J2231/5016

Abstract: A low-photon flux image-intensified electronic camera comprises a gallium arsenide phosphide (GaAsP) photocathode in a high vacuum tube assembly behind a hermetic front seal to receive image photons. Such is cooled by a Peltier device to −20° C. to 0° C., and followed by a dual microchannel plate. The microchannels in each plate are oppositely longitudinally tilted away from the concentric to restrict positive ions that would otherwise contribute to the generation high brightness “scintillation” noise events at the output of the image. A phosphor-coated output fiberoptic conducts intensified light to an image sensor device. This too is chilled and produces a camera signal output. A high voltage power supply connected to the dual microchannel plate provides for gain control and photocathode gating and shuttering. A fiberoptic taper is used at the output of the image intensifier vacuum tube as a minifier between the internal output fiberoptic and the image sensor.

Abstract translation: 低光子通量图像增强电子照相机包括在密封前密封件后面的高真空管组件中的砷化镓磷（GaAsP）光电阴极，以接收图像光子。 这样通过珀耳帖装置被冷却到-20℃至0℃，然后是双重微通道板。 每个板中的微通道相对于远离同心的纵向倾斜以限制正离子，否则将有助于在图像的输出处产生高亮度“闪烁”噪声事件。 磷光体涂层的输出光纤将增强的光传导到图像传感器装置。 这也被冷却并产生相机信号输出。 连接到双微通道板的高压电源提供增益控制和光电阴极门控和快门。 在图像增强器真空管的输出处使用光纤锥形作为内部输出光纤和图像传感器之间的微型计算机。

公开(公告)号：US06917058B2

公开(公告)日：2005-07-12

申请号：US10433060

申请日：2001-12-18

Applicant: Minoru Niigaki ,  Toru Hirohata ,  Hirofumi Kan ,  Kuniyoshi Mori

Inventor： Minoru Niigaki ,  Toru Hirohata ,  Hirofumi Kan ,  Kuniyoshi Mori

IPC: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01J40/06 ,  H01L29/24

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: In the case of a thick light-absorbing layer 2, a phenomenon of a decrease in the time resolution occurs. However, when the thickness of the light-absorbing layer 2 is limited, a portion of low electron concentration in one electron group is cut out, and hence overlap regions of adjacent electron concentration distributions decrease. Therefore, by shortening the transit time necessary for the passage of electrons, regions of overlapping electron distributions due to diffusion can also be suppressed. Furthermore, the strength of an electric field within a light-absorbing layer can be increased by thinning the light-absorbing layer. Therefore, the time resolution of infrared rays can be remarkably improved by a synergistic action of these effects. If it is assumed that the time resolution is 40 ps (picoseconds), for example, when the thickness of a light-absorbing layer is 1.3 μm which is nearly equal to the wavelength of infrared, then a possible time resolution is 7.5 ps when this thickness is 0.19 μm.

Abstract translation: 在厚光吸收层2的情况下，会发生时间分辨率降低的现象。 然而，当光吸收层2的厚度受限时，一个电子组中的低电子浓度部分被切掉，因此相邻电子浓度分布的重叠区域减小。 因此，通过缩短电子通过所需的通行时间，也可以抑制由扩散引起的重叠电子分布的区域。 此外，可以通过使光吸收层变薄来增加光吸收层内的电场强度。 因此，通过这些效果的协同作用，可以显着提高红外线的时间分辨率。 如果假设时间分辨率为40ps（皮秒），例如，当光吸收层的厚度为1.3μm，几乎等于红外线的波长时，则当这样的时间分辨率为7.5ps时 厚度为0.19毫米。

公开(公告)号：US20020180343A1

公开(公告)日：2002-12-05

申请号：US09871509

申请日：2001-05-31

Inventor： Arlynn Walter Smith ,  Rudolph George Benz

IPC: H01J001/62

CPC classification number: H01J31/50 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/50026

Abstract: A cathode structure for an image intensifier tube operates to extend the spectral range of an image intensifier to the short wavelength infrared (SWIR) range of the electromagnetic spectrum, which is between 1.0 to 1.75 nullm. The cathode structure utilizes a multi-layer structure consisting of a layer of GaSb disposed upon a layer of GaAs. The layers form a heterojunction therebetween where the GaSb material absorbs radiation and the GaAs is for emission characteristics. The doping profiles in each material are used to maximize the effects of band gap offsets of the heterojunction as well as provide a nearly flat conduction band profile for the cathode structure. The condition of nearly flat conduction band is enhanced by the use of blocking contacts at the emission surface of the cathode, where a bias is applied.

Abstract translation: 用于图像增强管的阴极结构用于将图像增强器的光谱范围扩展到1.0至1.75μm之间的电磁光谱的短波长红外（SWIR）范围。 阴极结构使用由设置在GaAs层上的GaSb层组成的多层结构。 这些层在其间形成异质结，其中GaSb材料吸收辐射，并且GaAs用于发射特性。 每个材料中的掺杂分布用于最大化异质结的带隙偏移的影响，并且为阴极结构提供几乎平坦的导带分布。 通过在施加偏压的阴极的发射表面上使用阻挡接触来增强近乎平坦导带的条件。

公开(公告)号：US06201257B1

公开(公告)日：2001-03-13

申请号：US09120613

申请日：1998-07-22

Applicant: Roger Stettner ,  Howard W. Bailey

Inventor： Roger Stettner ,  Howard W. Bailey

IPC: H01L3100

CPC classification number: B82Y10/00 ,  G01T1/1644 ,  G01T1/24 ,  G01T1/28 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/50031 ,  H01J2231/50063 ,  H01J2231/50068 ,  H01J2231/5056 ,  H01L27/14663

Abstract: An energy dispersive x-ray and gamma-ray photon counter is described. The counter uses a photon sensor which incorporates a unique photocathode called Advanced Semiconductor Emitter Technology for X-rays (ASET-X) as its critical element for converting the detected photons to electrons which are emitted into a vacuum. The electrons are multiplied by accelerations and collisions creating a signal larger than the sensor noise and thus allowing the photon to be energy resolved very accurately, to within ionization statistics. Because the signal is already above the sensor noise it does not have to be noise filtered therefore allowing high-speed counting. The photon sensor can also be used as a device to visualize and image gamma-ray and x-ray sources.

Abstract translation: 描述了能量色散X射线和γ射线光子计数器。 该计数器使用一个光子传感器，它将一个独特的光电阴极称为Advanced X射线发射器技术（ASET-X），作为将检测到的光子转换成真空发射的电子的关键元件。 电子乘以加速度和碰撞，产生大于传感器噪声的信号，从而使光子能够非常准确地被分解成电离统计。 由于信号已经高于传感器噪声，因此不必对噪声进行滤波，因此允许高速计数。 光子传感器也可以用作可视化和图像伽马射线和X射线源的装置。

公开(公告)号：US6040587A

公开(公告)日：2000-03-21

申请号：US208861

申请日：1998-12-10

Applicant: Katsumi Kishino ,  Toshihiro Kato

Inventor： Katsumi Kishino ,  Toshihiro Kato

IPC: H01J1/34 ,  H01J37/073 ,  H01L29/06

CPC classification number: H01J37/073 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2203/0296 ,  H01J2237/06383

Abstract: An electron emitting element including a semiconductor opto-electronic layer having a split valence band and capable of emitting a beam of spin-polarized electrons from an emitting surface thereof upon incidence of an excitation laser radiation upon the emitting surface, and a reflecting mirror formed on one of opposite sides of the opto-electronic layer remote from the emitting surface and cooperating with the emitting surface to effect multiple reflection therebetween of the incident laser radiation. The emitting element may be provided with a semiconductor light modulator element for modulating the intensity of the laser radiation incident upon the opto-electronic layer. A laser source may be formed integrally with the emitting element and disposed on the side of the opto-electronic layer remote from the emitting surface.

Abstract translation: 一种电子发射元件，包括具有分裂价带的半导体光电子层，并且能够在发射表面上引入激发激光辐射时从其发射表面发射自旋极化电子束;以及反射镜，形成在 远离发射表面的光电子层的相对侧之一与发射表面配合以在入射激光辐射之间实现多次反射。 发光元件可以设置有用于调制入射在光电子层上的激光辐射的强度的半导体光调制元件。 激光源可以与发光元件一体地形成并且设置在远离发射表面的光电子层的侧面上。