公开(公告)号：US08344320B2

公开(公告)日：2013-01-01

申请号：US12985708

申请日：2011-01-06

Applicant: Shohei Terada ,  Yoshihumi Taniguchi ,  Kazutoshi Kaji

Inventor： Shohei Terada ,  Yoshihumi Taniguchi ,  Kazutoshi Kaji

IPC: H01J37/147 ,  H01J37/28 ,  G01N23/02 ,  G21K5/04

CPC classification number: H01J37/26 ,  H01J37/05 ,  H01J37/224 ,  H01J37/265 ,  H01J2237/0492 ,  H01J2237/057 ,  H01J2237/10 ,  H01J2237/153 ,  H01J2237/24485 ,  H01J2237/2485 ,  H01J2237/30433

Abstract: A lens adjustment method and a lens adjustment system which adjust a plurality of multi-pole lenses of an electron spectrometer attached to a transmission electron microscope, optimum conditions of the multi-pole lenses are determined through simulation based on a parameter design method using exciting currents of the multi-pole lenses as parameters.

Abstract translation: 通过使用激励电流的参数设计方法，通过模拟来确定多透镜的最佳条件，调整透镜电子显微镜的电子光谱仪的多个多极透镜的透镜调整方法和透镜调整系统 的多极镜头作为参数。

公开(公告)号：US08309936B2

公开(公告)日：2012-11-13

申请号：US12708886

申请日：2010-02-19

Applicant: Holger Kreckel ,  Hjalmar Bruhns ,  Daniel Wolf Savin

Inventor： Holger Kreckel ,  Hjalmar Bruhns ,  Daniel Wolf Savin

IPC: H01J3/34

CPC classification number: H01J37/1472 ,  H01J2237/151 ,  H01J2237/153

Abstract: An ion deflector, for deflecting a beam of charged particles along an arc in a deflection plane, includes a pair of non-spherical deflection electrodes adapted for being charged with different voltages. The pair of deflection electrodes are configured to control, in both the deflection plane and in a direction perpendicular to the deflection plane, a cross sectional spread of charged particles in a deflected beam that exits the ion deflector. In some embodiments, a first electrode has a first height perpendicular to the deflection plane and a second electrode has a different second height.

Abstract translation: 用于沿着偏转平面中的电弧偏转带电粒子束的离子偏转器包括一对适于用不同电压充电的非球面偏转电极。 一对偏转电极被配置为在偏转平面和垂直于偏转平面的方向上控制带电粒子在离开离子偏转器的偏转光束中的横截面扩展。 在一些实施例中，第一电极具有垂直于偏转平面的第一高度，而第二电极具有不同的第二高度。

公开(公告)号：US07888641B2

公开(公告)日：2011-02-15

申请号：US12183726

申请日：2008-07-31

Applicant: Shohei Terada ,  Yoshihumi Taniguchi ,  Kazutoshi Kaji

Inventor： Shohei Terada ,  Yoshihumi Taniguchi ,  Kazutoshi Kaji

IPC: H01J37/05 ,  H01J37/147

CPC classification number: H01J37/26 ,  H01J37/05 ,  H01J37/224 ,  H01J37/265 ,  H01J2237/0492 ,  H01J2237/057 ,  H01J2237/10 ,  H01J2237/153 ,  H01J2237/24485 ,  H01J2237/2485 ,  H01J2237/30433

Abstract: A lens adjustment method and a lens adjustment system which adjust a plurality of multi-pole lenses of an electron spectrometer attached to a transmission electron microscope, optimum conditions of the multi-pole lenses are determined through simulation based on a parameter design method using exciting currents of the multi-pole lenses as parameters.

Abstract translation: 通过使用激励电流的参数设计方法，通过模拟来确定多透镜的最佳条件，调整透镜电子显微镜的电子光谱仪的多个多极透镜的透镜调整方法和透镜调整系统 的多极镜头作为参数。

公开(公告)号：US20100181480A1

公开(公告)日：2010-07-22

申请号：US12688095

申请日：2010-01-15

Applicant: Tomokazu SHIMAKURA ,  Masaki HASEGAWA

Inventor： Tomokazu SHIMAKURA ,  Masaki HASEGAWA

IPC: G01N23/225

CPC classification number: H01J37/026 ,  H01J37/04 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/0455 ,  H01J2237/153 ,  H01J2237/1536 ,  H01J2237/2008

Abstract: According to the present invention, a charged particle beam device has an unlimitedly rotatable sample stage and an electric field control electrode for correcting electric field distortion at a sample peripheral part. A voltage is applied to a sample on the unlimitedly rotatable sample stage through a retarding electrode that is in contact with a holder receiver at a rotation center of a rotary stage. An equipotential plane on the electric field control electrode is varied by applying a voltage to the electric field control electrode, and following this the equipotential plane at a sample edge is corrected, which enables the sample to be observed as far as its edge.

Abstract translation: 根据本发明，带电粒子束装置具有无限旋转的样品台和用于校正样品周边部分的电场失真的电场控制电极。 通过在旋转台的旋转中心处与保持器接收器接触的延迟电极将电压施加到无限可旋转的样品台上的样品。 通过向电场控制电极施加电压来改变电场控制电极上的等电位面，并且在此之后校正样品边缘处的等电位面，使得可以将样品观察到其边缘。

公开(公告)号：US07705328B2

公开(公告)日：2010-04-27

申请号：US11932117

申请日：2007-10-31

Applicant: Shu Satoh ,  Manny Sieradzki

Inventor： Shu Satoh ,  Manny Sieradzki

IPC: G21K5/10 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/3007 ,  H01J2237/045 ,  H01J2237/057 ,  H01J2237/153

Abstract: A ribbon ion beam system, comprising an ion source configured to generate a ribbon ion beam along a first beam path, wherein the ribbon ion beam enters a mass analysis magnet having a height dimension (h1) and a long dimension (w1) that is perpendicular to an xy plane, wherein the mass analysis magnet is configured with its momentum dispersive xy plane to receive the ribbon ion beam and to provide magnetic fields to transmit the ribbon ion beam along a second beam path, wherein the ribbon ion beam exiting the mass analysis magnet is divergent in the non-dispersive xz plane and convergent in the xy plane, a mass selection slit for receiving the divergent ribbon ion beam and selecting desired ion species of the ribbon ion beam exiting the mass analysis magnet, an angle correction device configured to receive the divergent ribbon ion beam exiting the mass selection slit into a parallel ribbon ion beam in the horizontal xz plane and a diverging ribbon ion beam in an xy plane along a third beam path, and wherein the parallel ribbon beam has a variable height (h2) and a long dimension, width (w2).

Abstract translation: 一种带状离子束系统，包括被配置为沿着第一光束路径产生带状离子束的离子源，其中所述带状离子束进入具有垂直于所述第一光束路径的高度尺寸（h1）和长尺寸（w1）的质量分析磁体 其中所述质量分析磁体被配置有其动量分散xy平面以接收带状离子束并且提供磁场以沿着第二光束路径透射带状离子束，其中离开质量分析的带状离子束 磁体在非分散xz平面中发散并且在xy平面中收敛，质量选择狭缝用于接收发散带状离子束并选择离开质量分析磁体的带离子束的期望离子种类，角度校正装置被配置为 将离开质量选择狭缝的发散带状离子束接收在水平xz平面中的平行带状离子束中，并沿着第三层在xy平面中分散带状离子束 光束路径，并且其中所述平行带状束具有可变高度（h2）和长尺寸宽度（w2）。

公开(公告)号：US20090108198A1

公开(公告)日：2009-04-30

申请号：US11932117

申请日：2007-10-31

Applicant: Shu Satoh ,  Manny Sieradzki

Inventor： Shu Satoh ,  Manny Sieradzki

IPC: H01J49/30

CPC classification number: H01J37/3171 ,  H01J37/3007 ,  H01J2237/045 ,  H01J2237/057 ,  H01J2237/153

Abstract: A ribbon ion beam system, comprising an ion source configured to generate a ribbon ion beam along a first beam path, wherein the ribbon ion beam enters a mass analysis magnet having a height dimension (h1) and a long dimension (w1) that is perpendicular to an xy plane, wherein the mass analysis magnet is configured with its momentum dispersive xy plane to receive the ribbon ion beam and to provide magnetic fields to transmit the ribbon ion beam along a second beam path, wherein the ribbon ion beam exiting the mass analysis magnet is divergent in the non-dispersive xz plane and convergent in the xy plane, a mass selection slit for receiving the divergent ribbon ion beam and selecting desired ion species of the ribbon ion beam exiting the mass analysis magnet, an angle correction device configured to receive the divergent ribbon ion beam exiting the mass selection slit into a parallel ribbon ion beam in the horizontal xz plane and a diverging ribbon ion beam in an xy plane along a third beam path, and wherein the parallel ribbon beam has a variable height (h2) and a long dimension, width (w2).

Abstract translation: 一种带状离子束系统，包括被配置为沿着第一光束路径产生带状离子束的离子源，其中所述带状离子束进入具有垂直于所述第一光束路径的高度尺寸（h1）和长尺寸（w1）的质量分析磁体 其中所述质量分析磁体被配置有其动量分散xy平面以接收带状离子束并且提供磁场以沿着第二光束路径透射带状离子束，其中离开质量分析的带状离子束 磁体在非分散xz平面中发散并且在xy平面中收敛，质量选择狭缝用于接收发散带状离子束并选择离开质量分析磁体的带离子束的期望离子种类，角度校正装置被配置为 将离开质量选择狭缝的发散带状离子束接收在水平xz平面中的平行带状离子束中，并沿着第三层在xy平面中分散带状离子束 光束路径，并且其中所述平行带状束具有可变高度（h2）和长尺寸宽度（w2）。

公开(公告)号：US06903338B2

公开(公告)日：2005-06-07

申请号：US10600050

申请日：2003-06-20

Applicant: Marian Mankos ,  David L. Adler

Inventor： Marian Mankos ,  David L. Adler

IPC: H01L21/66 ,  G01N23/203 ,  G01Q30/02 ,  G01Q30/20 ,  G21K7/00 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/20 ,  H01J2237/153 ,  Y10T428/12528

Abstract: One embodiment disclosed pertains to a method for inspecting a substrate. The method includes inserting the substrate into a holding place of a substrate holder, moving the substrate holder under an electron beam, and applying a voltage to a conductive element of the substrate holder. The voltage applied to the conductive element reduces a substrate edge effect. Another embodiment disclosed relates to an apparatus for holding a substrate that reduces a substrate edge effect. The apparatus includes a holding place for insertion of the substrate and a conductive element. The conductive element is positioned so as to be located within a gap between an edge of the holding place and an edge of the substrate.

Abstract translation: 所公开的一个实施例涉及用于检查基板的方法。 该方法包括将基板插入基板保持器的保持位置，将基板保持器移动到电子束下方，并向基板保持器的导电元件施加电压。 施加到导电元件的电压降低了衬底边缘效应。 公开的另一实施例涉及一种用于保持降低衬底边缘效应的衬底的装置。 该装置包括用于插入基板和导电元件的保持位置。 导电元件被定位成位于保持位置的边缘和基板的边缘之间的间隙内。

公开(公告)号：US06831260B2

公开(公告)日：2004-12-14

申请号：US10150153

申请日：2002-05-20

Applicant: Susumu Goto

Inventor： Susumu Goto

IPC: G01J4000

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/0492 ,  H01J2237/153

Abstract: A blur and image distortion of an electron beam on a sample are reduced even at a large converging angle of the electron beam. A reduction projection optical system (120) has an immersion lens (108) on the image plane (wafer 111) side. A collimator lens (pupil control optical system) 106 is arranged between the reduction projection optical system (120) and its object plane (mask 104). The collimator lens (106) arranges the entrance pupil (110) of the reduction projection optical system (120) at a finite position from the image plane on the downstream side of the image plane of the reduction projection optical system (120). This can minimize any blur and image distortion of an electron beam on a sample.

Abstract translation: 电子束的电子束的模糊和图像失真甚至在电子束的大的会聚角度被减小。 还原投影光学系统（120）在像面（晶片111）侧具有浸没透镜（108）。 准直透镜（光瞳控制光学系统）106布置在缩小投影光学系统（120）与其物平面（掩模104）之间。 准直透镜（106）将缩小投影光学系统（120）的入射光瞳（110）从缩小投影光学系统（120）的像面的下游侧的像面配置在有限位置。 这可以最小化样品上的电子束的任何模糊和图像失真。

公开(公告)号：US20030209676A1

公开(公告)日：2003-11-13

申请号：US09375627

申请日：1999-08-17

Inventor： HANS LOSCHNER ,  GERHARD STENGL ,  HERBERT VONACH

IPC: G03C005/00 ,  A61N005/00 ,  G21G005/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/153

Abstract: In a particle multibeam lithography apparatus an illumination system (242) having a particle source (203) produces an illuminating beam (205) of electrically charged particles, and a multibeam optical system (208) positioned after the illumination system (242) and comprising at least one aperture plate having an array of a plurality of apertures to form a plurality of sub-beams focuses the sub-beams onto the surface of a substrate (220), wherein for each sub-beam (207) a deflection unit (210) is positioned within the multibeam optical system and adapted to correct individual imaging aberrations of the respective sub-beam with respect to the desired target position and/or position the sub-beam during a writing process an the substrate surface Preferably, for each sub-beam the respective aperture of the first aperture plate defines the size and shape of the sub-beam cross-section and the multibeam optical system produces a demagnified image of the aperture on the substrate surface, with a demagnification of at least 20:1.

Abstract translation: 在粒子多光刻光刻设备中，具有粒子源（203）的照明系统（242）产生带电粒子的照明光束（205）和位于照明系统（242）之后的多光束光学系统（208） 具有多个孔的阵列以形成多个子光束的至少一个孔板将所述子光束聚焦到衬底（220）的表面上，其中对于每个子光束（207），偏转单元（210） 位于多光束光学系统内，并且适于相对于期望的目标位置校正各个子光束的各个成像像差和/或在写入过程期间将子光束定位于衬底表面。优选地，对于每个子光束 第一孔板的相应孔径限定了子束横截面的尺寸和形状，并且多光束光学系统产生基板表面上的孔的缩小图像， 缩小至少20：1。

公开(公告)号：US06630681B1

公开(公告)日：2003-10-07

申请号：US09620760

申请日：2000-07-21

Applicant: Shinichi Kojima

Inventor： Shinichi Kojima

IPC: G21K510

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/153 ,  H01J2237/1538 ,  H01J2237/30455 ,  Y10S430/143

Abstract: Apparatus and methods are disclosed for reducing aberrations caused by space-charged effects in charged-particle-beam (CPB) microlithography. A representative CPB microlithography apparatus includes illumination-optical and projection-optical systems and a beam-correction-optical system. The beam-correction-optical system is connected to a control computer configured to compute correction data for correcting a space-charge-effect (SCE)-based aberration. The correction data are calculated from the distribution of pattern elements in the exposure region, the illumination-beam current, the spread-angle distribution of the illumination beam, the beam-accelerating voltage of the illumination beam, the axial distance between the reticle and substrate, and optical characteristics of the projection-optical system.

Abstract translation: 公开了用于减少由带电粒子束（CPB）微光刻中的空间电荷效应引起的像差的装置和方法。 代表性的CPB微光刻设备包括照明光学和投影光学系统以及光束校正光学系统。 光束校正光学系统连接到配置为计算用于校正基于空间电荷效应（SCE）的像差的校正数据的控制计算机。 校正数据根据曝光区域中的图案元素的分布，照明光束电流，照明光束的扩展角度分布，照明光束的光束加速电压，标线片和基板之间的轴向距离 ，以及投影光学系统的光学特性。