Abstract:
An electrical component includes at least one external contact having a first metallization and a second metallization. The metallizations are fired and the second metallization only partly covers the first metallization. Furthermore, an electrical component includes at least one frame-shaped metallization. Furthermore, an electrical component includes a first and second metallization that have a different wettability with solder material.
Abstract:
A method of forming an electronic structural element having a stack including first and second electrode layers arranged alternatively with material layers is disclosed. A stack is formed with the first electrode layers projecting beyond a first lateral side of the stack and the second electrode layers spaced radially inward from the first lateral side. A first contacting structure that contacts each first electrode layer is applied directly to the first side of the stack, which contacting structure embeds such the projecting first electrode layers in an electrically conductive manner. A second contacting structure is formed by exposing the first and second electrode layers at a second side of the stack, forming, by an additive method, a solvent-free insulating structure that electrically insulates the first electrode layers, and applying an electrically conductive material over the solvent-free insulating structure to form the second contacting structure that contacts each second electrode layer.
Abstract:
Provided is an electrostrictive element that can prevent the breakage. A current collector 5 of an electrostrictive element 1 is constituted by sheet-shaped carbon nanotube aggregates 6, and can expand in the fiber direction in a state in which carbon nanotubes 7 overlap with each other, when a dielectric film 2 expands.
Abstract:
A method for producing an electrical contact is disclosed. In an embodiment the method includes providing a piezoelectric component that includes an electromechanical transducer having two first electrodes and a second electrode arranged between the two first electrodes and spaced from the two first electrodes by a piezoelectric material, the transducer further including a first main side, a second main side opposite from the first main side and a first longitudinal side, and forming a contiguous metallization layer onto a first partial region of the first main side and onto a second partial region along the first longitudinal side, so that the second partial region along the first longitudinal side is at a distance from a side edge facing the second main side and the metallization layer in the second partial region of the first longitudinal side contacts the two first electrodes in an electrically conducting manner.
Abstract:
A piezoelectric device, which has bipolar polarization-electric field (Pr-E) hysteresis characteristics of a piezoelectric material asymmetrically biased, when a first and second coercive electric fields respectively having smaller and larger absolute values are defined as Ec1 and Ec2 and a bias ratio of the coercive electric field is defined as [(Ec2+Ec1)/(Ec2−Ec1)]×100[%], includes a piezoelectric element unit including a piezoelectric body film whose bias ratio is 20% or more, the piezoelectric element unit operating with an electric field intensity smaller than that of the first coercive electric field. The piezoelectric device includes a refresh voltage applying circuit configured to apply a voltage to maintain operation performance of the relevant device, the voltage having an electric field intensity larger than the electric field intensity for operating the device and being equal to or less than three times |Ec1|, such that a polarized state of the piezoelectric body film is restored.
Abstract:
A piezoelectronic transistor device includes a first piezoelectric (PE) layer, a second PE layer, and a piezoresistive (PR) layer arranged in a stacked configuration, wherein an electrical resistance of the PR layer is dependent upon an applied voltage across the first and second PE layers by an applied pressure to the PR layer by the first and second PE layers. A piezoelectronic logic device includes a first and second piezoelectric transistor (PET), wherein the first and second PE layers of the first PET have a smaller cross sectional area than those of the second PET, such that a voltage drop across the PE layers of the first PET creates a first pressure in the PR layer of the first PET that is smaller than a second pressure in the PR layer of the second PET created by the same voltage drop across the PE layers of the second PET.
Abstract:
A vibrating element includes a vibrating arm for detection. An electrode is provided on the vibrating arm for detection. A wiring line is connected to the electrode. The wiring line is arranged on a piezoelectric body of a base portion. At least a part of the wiring line is an electrode for adjustment. The electrode for adjustment generates an electrical signal with an opposite phase to an output signal of leak vibration of the vibrating arm for detection.
Abstract:
A multilayer component includes a main body and an external contact. The external contact has a connection element and a contact layer. The contact layer electrically conductively connects the main body to the connection element. A connection between the main body and the connection element is produced by sintering of the contact layer.
Abstract:
A multilayer ceramic capacitor includes a ceramic base body and is structured such that fluorine is present between the ceramic base body and a sintered metal layer or between a sintered metal layer and a conductive resin layer.
Abstract:
The present invention discloses a MEMS device with guard ring, and a method for making the MEMS device. The MEMS device comprises a bond pad and a sidewall surrounding and connecting with the bond pad, characterized in that the sidewall forms a guard ring by an etch-resistive material.