Abstract:
A micromechanical device is provided, which includes at least one flexible member formed from an alloy, where the alloy is made up of one or more noble metals and one or more alloying elements, wherein each of the alloying elements has an equilibrium solid solubility in the noble metal, and wherein the one or more alloying elements are present in an amount that does not result in precipitates. A method for making a micromechanical device includes depositing an alloy on a substrate to form at least one flexible member, the alloy comprising one or more noble metals and one or more alloying elements, wherein the one or more alloying elements form a solid solution with the one or more noble metals; and removing a portion of the substrate or a sacrificial layer beneath the deposited alloy layer to obtain a flexible member.
Abstract:
A coating solution for providing a corrosion resistant coating to a metal surface including: a water soluble silicate; and at least one metal ion (X) selected from those having a valence of less than or equal to +4; wherein said coating solution forms an aqueous silicate-X network such that the silicate remains soluble, and wherein on contact with a metal surface (Y) a coating comprising of silicate-X and Y is formed.
Abstract:
Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 Ω·cm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450° C. in air. An increase in film resistivity was found upon substitution of other cations (e.g., Zn2+, Al3+) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo2O4 is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry. When x 0.67, the oxide was all spinel but the increased Co content lowered the conductivity.
Abstract:
An amorphous dielectric film for use in a semiconductor device, such as a DRAM, and a method of manufacturing the amorphous dielectric film, includes bismuth (Bi), titanium (Ti), silicon (Si), and oxide (O). The amorphous dielectric film may have a dielectric constant of approximately 60 or higher. The amorphous dielectric film may be expressed by the chemical formula Bi1-x-yTiySiyOz, where 0.2
Abstract translation:用于诸如DRAM的半导体器件中的非晶体介电膜以及制造非晶体介质膜的方法包括铋(Bi),钛(Ti),硅(Si)和氧化物(O)。 非晶介质膜可以具有大约60或更高的介电常数。 非晶介质膜可以由化学式Bi 1-xy Ti y Si y O z Z z表示, 其中0.2
Abstract:
A method and superalloy component for depositing a layer of material onto gas turbine engine components by atomic layer deposition. A superalloy component may have a ceramic thermal barrier coating on at least a portion of its surface, comprising a superalloy substrate and a bonding coat; and aluminum oxide (Al2O3) layer may be deposited on top of an yttria-stabilized zirconia layer and form a bonding coat by atomic layer deposition. The yttria-stabilized zirconia layer may have a plurality of micron sized gaps extending from the top surface of the ceramic coating towards the substrate and defining a plurality of columns of the yttria-stabilized zirconia layer. Also, atomic layer deposition may be used to lay an aluminum oxide (Al2O3) layer over a tantalum oxide (Ta2O5) layer on a silicon-based substrate. Using atomic layer deposition to coat the gas turbine engine components permits conformal coating of the columnar surface to permit gap expansion and contraction without sintering of the columnar surface or spalling of the coating, and form an oxidation resistant bonding coat.
Abstract translation:一种用于通过原子层沉积将材料层沉积到燃气涡轮发动机部件上的方法和超合金部件。 超级合金部件可以在其表面的至少一部分上具有陶瓷热障涂层,其包括超合金基底和粘合涂层; 并且氧化铝(Al 2 O 3 3)层可以沉积在氧化钇稳定的氧化锆层的顶部上,并通过原子层沉积形成粘结层。 氧化钇稳定的氧化锆层可以具有从陶瓷涂层的顶表面朝向衬底延伸的多个微米尺寸的间隙并且限定多个氧化钇稳定的氧化锆层的柱。 此外,原子层沉积可以用于在氧化钽(Ta 2 O 3)上铺设氧化铝(Al 2 O 3 O 3)层, SUB> 5 sub>)层。 使用原子层沉积来涂覆燃气涡轮发动机部件允许圆柱形表面的共形涂覆以允许间隙膨胀和收缩,而不会烧结柱状表面或剥落涂层,并形成抗氧化粘合涂层。
Abstract:
A solder coated lid for a package for an electronic device has a lead-free solder layer comprising a SnnullSb based solder with a liquidus temperature of at least 220 degrees C. provided on at least a region of the lid where the lid is to be joined to a base of a package. The lid can be joined to a base of a package at a low temperature, thereby reducing vaporization of solder components and adhesion thereof to electronic devices within the package.
Abstract:
Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 &OHgr;·cm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450° C. in air. Films deposited on sapphire substrates exhibit a refractive index of about 1.7 and are relatively transparent in the wavelength region from 0.6 to 10.0 &mgr;m. They are also magnetic. The electrical and spectroscopic properties of the oxides have been studied as a function of x=Co/(Co+Ni) ratio. An increase in film resistivity was found upon substitution of other cations (e.g., Zn2+, Al3+) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo2O4 is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry. When x 0.67, the oxide was all spinel but the increased Co content lowered the conductivity. The influence of cation charge state and site occupancy in the spinel structure markedly affects calculated electron band structures and contributes to a reduction of p-type conductivity, the formation of polarons, and the reduction in population of mobile charge carriers that tend to limit transmission in the infrared.