Process for producing ceramic porous bodies having hollow structures at low temperatures
    21.
    发明授权
    Process for producing ceramic porous bodies having hollow structures at low temperatures 失效
    在低温下制造具有中空结构的陶瓷多孔体的方法

    公开(公告)号:US06645571B1

    公开(公告)日:2003-11-11

    申请号:US09657398

    申请日:2000-09-08

    Abstract: A process for producing the ceramic porous body comprising the steps of (1) forming micelles in liquid by mixing {circle around (1)} surfactant molecules, {circle around (2)} surfactant molecules and given organic molecules, or {circle around (3)} different kinds of surfactant molecules, (2) forming a precursor of a ceramic porous body having an organic-inorganic structure is formed through mixing a ceramic material or a precursor of the ceramic material into the liquid containing the micelles, the precursor of the ceramic porous body comprising a template having the micelles arranged in a hexagonal, cubic or lamella form and the ceramic material or the ceramic material precursor adsorbed around the micelles, (3) removing the surfactant molecules or the surfactant molecules and the given organic molecules in the precursor of the ceramic porous body by photo-oxidation through irradiating vacuum ultraviolet light upon the precursor to leave an inorganic skeleton alone, and (4) thereby forming the ceramic porous body having nanometer-scale pores at a low temperature.

    Abstract translation: 一种制造陶瓷多孔体的方法,包括以下步骤:(1)通过混合(圆周(1个表面活性剂分子,2个表面活性剂分子和给定的有机分子,或3个不同的 表面活性剂分子,(2)通过将陶瓷材料或陶瓷材料的前体混合到含有胶束的液体中形成具有有机 - 无机结构的陶瓷多孔体的前体,陶瓷多孔体的前体包含 具有以六边形,立方体或薄片形式布置的胶束和陶瓷材料或陶瓷材料前体吸附在胶束周围的模板,(3)去除表面活性剂分子或表面活性剂分子和陶瓷多孔的前体中的给定有机分子 通过对前体照射真空紫外光进行光氧化,单独留下无机骨架,(4)由此形成 该陶瓷多孔体在低温下具有纳米尺度的孔。

    Electron beam modification of CVD deposited low dielectric constant materials
    24.
    发明授权
    Electron beam modification of CVD deposited low dielectric constant materials 失效
    CVD沉积低介电常数材料的电子束修饰

    公开(公告)号:US06582777B1

    公开(公告)日:2003-06-24

    申请号:US09506515

    申请日:2000-02-17

    Abstract: A process for forming low dielectric constant dielectric films for the production of microelectronic devices. A dielectric layer is formed on a substrate by chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposit apparatus, or a reaction product formed from the precursor in the apparatus, onto a substrate, to form a layer on a surface of a substrate. After optionally heating the layer at a sufficient time and temperature to dry the layer, the layer is then exposed to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose to modify the layer. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.

    Abstract translation: 一种用于形成用于生产微电子器件的低介电常数介电膜的方法。 通过化学气相沉积在化学气相沉积设备中的单体或低聚物电介质前体或在设备中由前体形成的反应产物,在基底上形成电介质层,以在基底上形成层 基质。 在任选地在足够的时间和温度下加热该层以干燥该层,然后将该层暴露于电子束辐射足够长的时间,温度,电子束能量和电子束剂量以修饰该层。 电子束曝光步骤通过用来自大面积电子束源的宽大的大束电子束辐射来全面暴露电介质层来进行。

    Method of manufacturing a diffraction grating
    27.
    发明授权
    Method of manufacturing a diffraction grating 失效
    衍射光栅的制造方法

    公开(公告)号:US06514576B1

    公开(公告)日:2003-02-04

    申请号:US09472185

    申请日:1999-12-27

    CPC classification number: G02B5/1857

    Abstract: This invention provides a method of manufacturing a diffraction grating capable of scribing by an interference light at a lower power density than usual. That is, a coating solution containing a metal alkoxide and a &bgr;-diketone is coated on a substrate, the coated film is heat treated to form a gelled film and then an interference light is irradiated to the gelled film, to manufacture a diffraction grating.

    Abstract translation: 本发明提供一种制造能够以比通常更低功率密度的干涉光划刻的衍射光栅的方法。 也就是说,将含有金属醇盐和β-二酮的涂布溶液涂布在基材上,对涂膜进行热处理以形成胶凝膜,然后将干涉光照射到胶凝膜上,制造衍射光栅。

    Remote exposure of workpieces using a recirculated plasma
    30.
    发明授权
    Remote exposure of workpieces using a recirculated plasma 有权
    使用再循环等离子体远程暴露工件

    公开(公告)号:US06406759B1

    公开(公告)日:2002-06-18

    申请号:US09362471

    申请日:1999-07-28

    Applicant: J. Reece Roth

    Inventor: J. Reece Roth

    Abstract: An OAUGD plasma is generated using, for example, paraelectric or peristaltic electrohydrodynamic (EHD) techniques, in the plasma generator of a remote-exposure reactor, wherein one or more active species, especially oxidizing species in the plasma are convected away from the plasma-generation region and directed towards a workpiece that is located outside of the plasma-generation region (e.g., within an optional remote-exposure chamber configured to the plasma generator). In this way, the workpiece can be subjected to the one or more active species without directly being subjected to either the plasma or to the electric fields used to generate the plasma. The plasma generator may have a set of flat panels arranged within an air baffle to convect the active species in a serpentine manner through the plasma generator. The remote-exposure reactor can also be configured as a portable backpack unit with tubing that is used to direct the active species onto the workpiece, rather than placing the workpiece within a remote-exposure chamber of the reactor.

    Abstract translation: 在远程暴露反应器的等离子体发生器中使用例如顺电或蠕动电动力学(EHD)技术产生OAUGD等离子体,其中一个或多个活性物质,特别是等离子体中的氧化物质与等离子体 - 并且指向位于等离子体产生区域外部的工件(例如,在配置到等离子体发生器的可选的远程曝光室内)。 以这种方式,工件可以经受一种或多种活性物质而不直接经受等离子体或用于产生等离子体的电场。 等离子体发生器可以具有布置在空气挡板内的一组平板,以通过等离子体发生器以蛇形方式对流活性物质。 远程曝光反应器也可以配置为具有用于将活性物质引导到工件上的管道的便携式背包单元,而不是将工件放置在反应器的远程暴露室内。

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