公开(公告)号：US09315381B2

公开(公告)日：2016-04-19

申请号：US14374012

申请日：2013-01-25

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Yuichiro Himeda ,  Wan-Hui Wang

IPC: H01M8/06 ,  C01B3/22 ,  B01J31/22 ,  C01B3/32 ,  B01J31/18 ,  C01B4/00 ,  C07F15/00

CPC classification number: C01B3/326 ,  B01J31/1815 ,  B01J31/2295 ,  B01J2231/763 ,  B01J2531/005 ,  B01J2531/0205 ,  B01J2531/0216 ,  B01J2531/821 ,  B01J2531/822 ,  B01J2531/827 ,  C01B3/22 ,  C01B4/00 ,  C01B2203/02 ,  C01B2203/0277 ,  C01B2203/1041 ,  C01B2203/1211 ,  C07F15/0033 ,  H01M8/065 ,  Y02P20/52

Abstract: To provide a catalyst for dehydrogenation of formic acid which allows hydrogen, heavy hydrogen gas or heavy-hydrogenated hydrogen containing no carbon monoxide to be produced through dehydrogenation of formic acid in a highly efficient manner.A catalyst for dehydrogenation of formic acid, including: a multinuclear metal complex represented by the following Formula (1), a tautomer or stereoisomer thereof, or a salt thereof, where M1 and M2 denote transition metals and may be the same as or different from each other; Q1 to Q6 each independently denote carbon or nitrogen; R1 to R6 each independently denote, for example, a hydrogen atom, an alkyl group, a phenyl group, a nitro group, a halogen group, a sulfonate group (sulfo group); L1 and L2 each independently denote an aromatic anionic ligand or an aromatic ligand, and may be substituted by one or more substituents; Y1 and Y2 each independently denote any ligand or are absent; and m denotes a positive integer, 0, or a negative integer.

Abstract translation: 提供甲酸脱氢催化剂，其允许通过以高效的方式使甲酸脱氢生产氢，重氢气或不含一氧化碳的重氢氢。 一种用于甲酸脱氢的催化剂，包括：由下式（1）表示的多核金属络合物，其互变异构体或立体异构体或其盐，其中M1和M2表示过渡金属，并且可以相同或不同 彼此; Q1至Q6各自独立地表示碳或氮; R 1〜R 6各自独立地表示例如氢原子，烷基，苯基，硝基，卤素基，磺酸酯基（磺基）等。 L1和L2各自独立地表示芳族阴离子配体或芳族配体，并且可以被一个或多个取代基取代; Y1和Y2各自独立地表示任何配体或不存在; m表示正整数，0表示负整数。

公开(公告)号：US20160075558A1

公开(公告)日：2016-03-17

申请号：US14949697

申请日：2015-11-23

Applicant: Zeon Corporation ,  National Institute of Advanced Industrial Science and Technology

Inventor： Akiyoshi SHIBUYA ,  Kenji HATA ,  Motoo YUMURA

IPC: C01B31/02 ,  C23C16/02 ,  C23C16/455 ,  C23C16/26 ,  C23C16/44

CPC classification number: C01B31/024 ,  B01J15/005 ,  B01J19/0006 ,  B01J19/0073 ,  B01J19/22 ,  B01J2219/00159 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/164 ,  C01B2202/08 ,  C23C16/0218 ,  C23C16/26 ,  C23C16/4408 ,  C23C16/4412 ,  C23C16/45502 ,  Y02P20/149

Abstract: Provided is a production apparatus (100) for continuously producing aligned carbon nanotube aggregates on a substrate supporting a catalyst while continuously transferring the substrate. The production apparatus (100) includes gas mixing prevention means (12, 13) for preventing gas present outside a growth furnace (3a) from flowing into the growth furnace (3a). The gas mixing prevention means (12, 13) includes a seal gas ejection section (12b, 13b) so that the seal gas does not flow into the growth furnace through the openings of the growth furnace. The production apparatus prevents the outside air from flowing into the production apparatus, uniformly controls, within a range suitable to production of CNTs, a concentration distribution(s) and a flow rate distribution(s) of a raw material gas and/or a catalyst activation material on the substrate, and does not disturb gas flow as much as possible in the growth furnace.

Abstract translation: 提供一种用于在支撑催化剂的基板上连续生产排列的碳纳米管聚集体的生产设备（100），同时连续转移基板。 制造装置（100）包括用于防止存在于生长炉（3a）外的气体流入生长炉（3a）的气体混合防止装置（12,13）。 气体混合防止装置（12,13）包括密封气体喷射部分（12b，13b），使得密封气体不通过生长炉的开口流入生长炉。 制造装置防止外部空气流入制造装置，在适合于CNT的制造的范围内均匀地控制原料气体和/或催化剂的浓度分布和流量分布 活化材料，并且不会在生长炉中尽可能地扰乱气体流动。

公开(公告)号：US20160064645A1

公开(公告)日：2016-03-03

申请号：US14888278

申请日：2014-05-22

Applicant: DENSO CORPORATION ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Akihiko TESHIGAHARA ,  Kazuhiko KANO ,  Morito AKIYAMA ,  Keiko NISHIKUBO

IPC: H01L41/18 ,  C23C14/46 ,  C23C14/18 ,  C23C14/34

CPC classification number: H01L41/18 ,  C23C14/0052 ,  C23C14/06 ,  C23C14/0641 ,  C23C14/18 ,  C23C14/185 ,  C23C14/34 ,  C23C14/3464 ,  C23C14/46 ,  H01L41/187 ,  H01L41/316

Abstract: A piezoelectric thin film is formed through sputtering and consists essentially of scandium aluminum nitride. The carbon atomic content is 2.5 at % or less. When producing the piezoelectric thin film, scandium and aluminum are sputtered simultaneously on a substrate from a scandium aluminum alloy target material having a carbon atomic content of 5 at % or less in an atmosphere where at least nitrogen gas exists. The sputtering may be conducted also by applying an ion beam on an opposing surface of the alloy target material at an oblique angle. Moreover, aluminum and scandium may be also sputtered simultaneously on the substrate from an Sc target material and an Al target material. As a result, a piezoelectric thin film which exhibits excellent piezoelectric properties and a method for the same can be provided.

Abstract translation: 通过溅射形成压电薄膜，其基本上由氮化钪组成。 碳原子含量为2.5原子％以下。 当制造压电薄膜时，在至少存在氮气的气氛中，从碳原子含量为5at％以下的钪铝合金靶材同时在基板上溅射钪和铝。 也可以通过在合金靶材的相对表面上以倾斜角施加离子束来进行溅射。 此外，铝和钪也可以从Sc靶材料和Al靶材料在基板上同时溅射。 结果，可以提供表现出优异的压电性能的压电薄膜及其方法。

公开(公告)号：US09272971B2

公开(公告)日：2016-03-01

申请号：US14240108

申请日：2013-02-28

Applicant: Sekisui Chemical Co., Ltd. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Tomoaki Nishino ,  Toshihito Miyama ,  Kazuhisa Murata ,  Yanyong Liu

IPC: B01J23/00 ,  B01J23/02 ,  C07C29/153 ,  C07C29/158 ,  C07C45/49 ,  C07C51/10 ,  B01J37/02 ,  B01J21/06 ,  B01J23/656 ,  B01J35/10 ,  B01J8/06

CPC classification number: C07C29/153 ,  B01J8/06 ,  B01J21/063 ,  B01J23/58 ,  B01J23/6562 ,  B01J35/1019 ,  B01J35/1023 ,  B01J35/1038 ,  B01J35/1057 ,  B01J35/1061 ,  B01J37/0201 ,  B01J37/024 ,  C07C29/158 ,  C07C45/49 ,  C07C51/10 ,  Y02P20/52 ,  C07C31/08 ,  C07C47/06 ,  C07C53/08

Abstract: The present invention relates to a catalyst for C2 oxygenate synthesis in which a hydrogenated active metal is supported on a porous carrier to synthesize a C2 oxygenate from a mixed gas containing hydrogen and carbon monoxide, wherein the porous carrier has an average pore diameter of 0.1 to 20 nm.

Abstract translation: 本发明涉及一种用于C2含氧化合物合成的催化剂，其中将氢化的活性金属负载在多孔载体上以从含氢和一氧化碳的混合气体中合成C2含氧化合物，其中多孔载体的平均孔径为0.1〜 20nm。

公开(公告)号：US20160047979A1

公开(公告)日：2016-02-18

申请号：US14779921

申请日：2014-01-20

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Tomoya Yoshida ,  Youichi Sakakibara ,  Masahiko Mori ,  Takashi Nishi

IPC: G02B6/125 ,  G02B6/02 ,  G02B6/132 ,  G02B6/134 ,  G02B6/245

CPC classification number: G02B6/125 ,  G02B6/02395 ,  G02B6/1223 ,  G02B6/13 ,  G02B6/132 ,  G02B6/1347 ,  G02B6/245 ,  G02B6/4214 ,  G02B2006/12119 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12176

Abstract: A method is provided for processing a silicon-based wire optical waveguide, by which an optical transmission loss of the silicon-based wire optical waveguide due to ion irradiation with high energy is suppressed, and an end portion of the silicon-based wire optical waveguide that is three-dimensionally curved in a self-aligning manner is obtained. According to the method a protective film is selectively formed on the silicon-based wire optical waveguide exclusive of the end portion of the silicon-based wire optical waveguide; and ions are implanted to the silicon-based wire optical waveguide in a particular direction, so as to curve the end portion of the silicon-based wire optical waveguide to the particular direction in a self-alignment manner.

Abstract translation: 提供了一种处理硅基线光波导的方法，通过该方法抑制了由于高能量的离子照射而导致的硅基线光波导的光传输损耗，并且硅基线光波导的端部 以自对准的方式三维地弯曲。 根据该方法，在硅基线光波导的端部以外的硅基线光波导上选择性地形成保护膜; 并且将离子沿特定方向注入到硅基线光波导中，以便以自对准方式将硅基线光波导的端部弯曲到特定方向。

公开(公告)号：US20160042102A1

公开(公告)日：2016-02-11

申请号：US14777176

申请日：2014-07-16

Applicant: MARUBUN CORPORATION ,  TOSHIBA KIKAI KABUSHIKI KAISHA ,  RIKEN ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  ULVAC, INC. ,  TOKYO OHKA KOGYO CO., LTD.

Inventor： Yukio KASHIMA ,  Eriko MATSUURA ,  Mitsunori KOKUBO ,  Takaharu TASHIRO ,  Takafumi OOKAWA ,  Hideki HIRAYAMA ,  Won Sung YOUN ,  Hideki TAKAGI ,  Ryuichiro KAMIMURA ,  Yamato OSADA ,  Satoshi SHIMATANI

IPC: G06F17/50 ,  H01L33/44 ,  G06F17/10 ,  H01L33/50

CPC classification number: H01L33/22 ,  G06F17/10 ,  G06F17/5009 ,  H01L33/24 ,  H01L33/44 ,  H01L33/502 ,  H01L2933/0083

Abstract: A semiconductor light emitting element with a design wavelength of λ, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength λ satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength λ becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.5a and the period a and the radius R that are determined for each order m of the Bragg conditions.

Abstract translation: 具有设计波长为λ的半导体发光元件，包括在形成发光元件的层之间的一个或多个界面的每一个处具有两个具有不同折射率的结构的光子晶体周期性结构。 作为一个或多个周期结构和设计波长λ中的每一个的参数的周期a和半径R满足布拉格条件。 周期a和半径R之间的比率（R / a）是确定的，使得每个周期性结构的TE光的预定光子带隙（PBG）变得最大。 确定每个周期结构的参数，使得整个半导体发光元件相对于波长λ的光的光提取效率变得最大，作为使用FDTD方法进行模拟分析的结果，使用作为变量的深度h 大于或等于0.5a的周期性结构以及针对布拉格条件的每个阶m确定的周期a和半径R.

公开(公告)号：US09257544B2

公开(公告)日：2016-02-09

申请号：US14674861

申请日：2015-03-31

Applicant: FUJI ELECTRIC CO., LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Manabu Takei ,  Yoshiyuki Yonezawa

IPC: H01L29/739 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/7397 ,  H01L29/1608 ,  H01L29/66348

Abstract: A semiconductor device includes semiconductor layers of a first conductivity-type and a second conductivity-type stacked on a silicon carbide semiconductor and having differing impurity concentrations. Trenches disposed penetrating the semiconductor layer of the second conductivity-type form a planar striped pattern; and a gate electrode is disposed therein through a gate insulation film. First and second semiconductor regions respectively of the first and the second conductivity-types have impurity concentrations exceeding that of the semiconductor layer of the second conductivity-type and are selectively disposed therein. The depth of the second semiconductor region exceeds that of the semiconductor layer of the second conductivity-type, but not that of the trenches. The second semiconductor region is arranged at given intervals along the length of the trenches. In the silicon carbide semiconductor below the trench bottoms, a third semiconductor region of the second conductivity-type and having a floating potential is disposed covering the trench bottoms.

Abstract translation: 半导体器件包括堆叠在碳化硅半导体上并且具有不同杂质浓度的第一导电型和第二导电类型的半导体层。 贯穿第二导电型半导体层的沟槽形成平面条状图案; 并且栅极电极通过栅极绝缘膜设置在其中。 分别具有第一和第二导电类型的第一和第二半导体区域的杂质浓度超过第二导电类型的半导体层的杂质浓度，并且选择性地设置在其中。 第二半导体区域的深度超过第二导电类型的半导体层的深度，但不超过沟槽的深度。 第二半导体区域沿着沟槽的长度以给定的间隔布置。 在沟槽底部下方的碳化硅半导体中，覆盖沟槽底部的第二导电类型的第三半导体区域具有浮动电位。

公开(公告)号：US20160031035A1

公开(公告)日：2016-02-04

申请号：US14881971

申请日：2015-10-13

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  KOMATSUSEIKI KOSAKUSHO CO., LTD.

Inventor： Masahito KATOH ,  Tomomi SHIRATORI

IPC: B23K20/02 ,  C22C38/44 ,  B23K20/227 ,  C22C38/00 ,  C22C38/54 ,  C22C38/04 ,  C22C38/58 ,  C22C38/02

CPC classification number: B23K20/227 ,  B23K20/021 ,  B23K20/023 ,  B23K2103/05 ,  C21D6/002 ,  C21D2211/001 ,  C21D2211/008 ,  C22C38/001 ,  C22C38/002 ,  C22C38/02 ,  C22C38/04 ,  C22C38/44 ,  C22C38/54 ,  C22C38/58

Abstract: A method for bonding stainless steel members includes: contacting a first stainless steel member with a second stainless steel member that has a strain exceeding 50% reduction; and heating the first and second stainless steel members to a re-crystallization initiation temperature or higher, after the contacting.

Abstract translation: 一种接合不锈钢构件的方法包括：使第一不锈钢构件与应变超过50％应变的第二不锈钢构件接触; 并且在接触之后将第一和第二不锈钢构件加热至再结晶初始温度或更高。

公开(公告)号：US20160017273A1

公开(公告)日：2016-01-21

申请号：US14772623

申请日：2014-01-06

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Kenichi YAMASHITA ,  Maria Portia NAGATA ,  Masaya MIYAZAKI ,  Hideaki MAEDA

IPC: C12M1/00 ,  C12N5/071

CPC classification number: C12M47/04 ,  C12N5/0612

Abstract: A sperm selection unit structure for efficiently separating sperm having favorable motility includes: a storage part which stores semen acquired from an animal therein; a buffer solution flow passage which communicates with the storage part and in which a buffer solution flows in the direction toward the storage part as a laminar flow; and a swim-up passage which communicates with the storage part such that the sperm swim up in the buffer solution flow passage from the storage part, wherein a downstream part of the swim-up passage is formed of a flow passage having a wide width where the buffer solution flows as a slow flow while maintaining a laminar flow state of the buffer solution, and a downstream end portion of the flow passage is opened in a state where the downstream end portion faces a wall surface of the storage part.

Abstract translation: 用于有效分离具有良好运动性的精子的精子选择单元结构包括：存储从动物获取的精液的储存部分; 缓冲溶液流动通道，其与所述储存部分连通，并且其中缓冲溶液以朝向所述存储部分的方向作为层流流动; 以及游泳通道，其与储存部分连通，使得精子从储存部分在缓冲溶液流动通道中游泳，其中游泳通道的下游部分由宽度宽的流动通道形成， 缓冲溶液以缓慢的流动流动，同时保持缓冲溶液的层流状态，并且在下游端部分面向存储部分的壁表面的状态下，打开流道的下游端部。

公开(公告)号：US20160002654A1

公开(公告)日：2016-01-07

申请号：US14769055

申请日：2014-02-20

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY

Inventor： Takeshi Matsumura ,  Noriho Fukuzawa ,  Noriko Itchouda ,  Chikara Masuta

IPC: C12N15/82

CPC classification number: C12N15/8257 ,  C12N15/8203 ,  C12N15/8206 ,  C12N15/8207

Abstract: A nucleic acid molecule for expressing a foreign gene in a plant, said nucleic acid molecule carrying, in this order, a right border (RB) sequence derived from the T-DNA sequence of an agrobacterium, an expression promoter sequence capable of functioning in the aforesaid plant, a sequence corresponding to the RNA2 genome of cucumber mosaic virus wherein a 2b protein-encoding gene has been partly or entirely substituted by the aforesaid foreign gene, and a left border (LB) sequence derived from the T-DNA sequence of an agrobacterium.

Abstract translation: 一种用于在植物中表达外源基因的核酸分子，所述核酸分子依次携带衍生自农杆菌的T-DNA序列的右边界（RB）序列，能够在农杆菌中起作用的表达启动子序列 上述植物，对应于黄瓜花叶病毒的RNA2基因组的序列，其中2b蛋白编码基因已被部分或完全被上述外源基因取代，以及衍生自上述外源基因的T-DNA序列的左边界（LB）序列 农杆菌。