公开(公告)号：US20210349398A1

公开(公告)日：2021-11-11

申请号：US17282871

申请日：2019-09-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Vahid MOHAMMADI ,  Yassin CHOWDHURY ,  Pieter Cristiaan DE GROOT ,  Wouter Joep ENGELEN ,  Marcel Johannes Petrus Theodorus VAN DER HOORN

IPC: G03F7/20 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/18

Abstract: A radiation filter for reducing transmission of an unwanted wavelength of radiation. The radiation filter includes zirconium and SiN3. The radiation filter may form part of a radiation sensor including a passivation layer arranged to receive radiation transmitted by the radiation filter, a photodiode arranged to receive radiation transmitted by the passivation layer, and circuit elements connected to the photodiode. The radiation sensor may perform optical measurements as part of an extreme ultraviolet lithographic apparatus or a lithographic tool.

公开(公告)号：US20210349395A1

公开(公告)日：2021-11-11

申请号：US17379662

申请日：2021-07-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Patrick WARNAAR ,  Patricius Aloysius Jacobus Tinnemans ,  Grzegorz Grzela ,  Everhardus Cornelis Mos ,  Wim Tjibbo Tel ,  Marinus Jochemsen ,  Bart Peter Bert Segers ,  Frank Staals

IPC: G03F7/20

Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

公开(公告)号：US11170907B2

公开(公告)日：2021-11-09

申请号：US15770688

申请日：2016-11-03

Applicant: ASML Netherlands B.V.

Inventor： Pieter Willem Herman De Jager ,  Sipke Jacob Bijlsma ,  Olav Waldemar Vladimir Frijns ,  Andrey Alexandrovich Nikipelov ,  Nicolaas Ten Kate ,  Antonius Theodorus Anna Maria Derksen ,  Jacobus Johannus Leonardus Hendricus Verspay ,  Robert Gabriël Maria Lansbergen ,  Aukje Arianne Annette Kastelijn

IPC: G21G1/10 ,  G21G1/12 ,  H05H7/08 ,  H01S3/09 ,  G02B27/10 ,  G21K5/00 ,  G21K5/04 ,  G21K1/08 ,  G21K1/093 ,  G21G1/00

Abstract: A radioisotope production apparatus (RI) comprising an electron source arranged to provide an electron beam (E). The electron source comprises an electron injector (10) and an electron accelerator (20). The radioisotope production apparatus (RI) further comprises a target support structure configured to hold a target (30) and a beam splitter (40) arranged to direct the a first portion of the electron beam along a first path towards a first side of the target (30) and to direct a second portion of the electron beam along a second path towards a second side of the target (30).

公开(公告)号：US11170072B2

公开(公告)日：2021-11-09

申请号：US15558186

申请日：2016-03-25

Applicant: ASML Netherlands B.V.

Inventor： Everhardus Cornelis Mos ,  Velislava Ignatova ,  Erik Jensen ,  Michael Kubis ,  Hubertus Johannes Gertrudus Simons ,  Peter Ten Berge ,  Erik Johannes Maria Wallerbos ,  Jochem Sebastiaan Wildenberg

IPC: G06F17/18 ,  G06F30/20 ,  H01L21/66 ,  G03F7/20 ,  G03F9/00

Abstract: A method including evaluating, with respect to a parameter representing remaining uncertainty of a mathematical model fitting measured data, one or more mathematical models for fitting measured data and one or more measurement sampling schemes for measuring data, against measurement data across a substrate, and identifying one or more mathematical models and/or one or more measurement sampling schemes, for which the parameter crosses a threshold.

公开(公告)号：US11169450B2

公开(公告)日：2021-11-09

申请号：US17050264

申请日：2019-03-18

Applicant: ASML Netherlands B.V.

Inventor： Hans Butler ,  Joep Sander De Beer ,  Cornelius Adrianus Lambertus De Hoon ,  Jeroen Pieter Starreveld ,  Martinus Van Duijnhoven ,  Maurice Willem Jozef Etiënne Wijckmans

IPC: G03F7/20

Abstract: The invention provides a pneumatic support device for a lithographic apparatus and a lithographic apparatus with such support device. The support device comprises a gas spring. The gas spring comprises a suspending part, a suspended part, and a pressure chamber configured for supporting the suspended part relative to the suspending part. The support device further comprises an actuator configured for positioning the suspended part relative to the suspending part, an acceleration sensor configured for generating a first sensor signal representative for the acceleration of the suspending part, a pressure sensor configured for generating a second sensor signal representative for the pressure in the pressure chamber, and a control unit. The control unit is configured to: receive the first sensor signal, receive the second sensor signal, filter the first sensor signal in a low-pass filter, filter the second sensor signal in a high-pass filter, determine, based on the filtered first sensor signal and filtered second sensor signal, a force exerted by the suspending part on the suspended part, and generate, based on said force, a control signal for the actuator.

公开(公告)号：US11156924B2

公开(公告)日：2021-10-26

申请号：US17269909

申请日：2019-07-16

Applicant: ASML Netherlands B.V.

Inventor： Johannes Petrus Martinus Bernardus Vermeulen ,  Luc Leonardus Adrianus Martinus Meulendijks ,  Antonius Franciscus Johannes De Groot ,  Johannes Adrianus Cornelis Maria Pijnenburg

IPC: G03F7/20

Abstract: The invention provides a substrate support for supporting a substrate, comprising: a support body, which support body comprises a support surface for supporting the substrate, a rotary dither device, which is configured to induce a relative rotary dither motion between the substrate and the support surface of the support body around a rotation axis which is perpendicular to the support surface.

公开(公告)号：US11156921B2

公开(公告)日：2021-10-26

申请号：US16767987

申请日：2018-11-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Raphael Nico Johan Stegen ,  Giovanni Luca Gattobigio ,  Theodorus Wilhelmus Polet

IPC: G03F7/20

Abstract: A fluid handling structure configured to confine immersion fluid to a region of a lithographic apparatus, the fluid handling structure having an aperture formed therein for the passage therethrough of a radiation beam through the immersion fluid, the aperture defining an immersion space to be filled with the immersion fluid, and having an inner part and an outer part, wherein the inner part and the outer part are arranged so as to form therebetween a variable space and a connecting space that connects the variable space to the immersion space, wherein the outer part is movable relative to the inner part in a first plane so as to change in shape the variable space but not the connecting space, and wherein the fluid handling structure is configured to contain the immersion fluid in the variable space.

公开(公告)号：US11150562B2

公开(公告)日：2021-10-19

申请号：US16486859

申请日：2018-02-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Jelle Nije ,  Alexander Ypma ,  Dimitra Gkorou ,  Georgios Tsirogiannis ,  Robert Jan Van Wijk ,  Tzu-Chao Chen ,  Frans Reinier Spiering ,  Sarathi Roy ,  Cédric Désiré Grouwstra

IPC: G03F7/20

Abstract: A method of optimizing an apparatus for multi-stage processing of product units such as wafers, the method includes: receiving object data representing one or more parameters measured across the product units and associated with different stages of processing of the product units; and determining fingerprints of variation of the object data across the product units, the fingerprints being associated with different respective stages of processing of the product units. The fingerprints may be determined by decomposing the object data into components using principal component analysis for each different respective stage; analyzing commonality of the fingerprints through the different stages to produce commonality results; and optimizing an apparatus for processing product units based on the commonality results.

公开(公告)号：US11143972B2

公开(公告)日：2021-10-12

申请号：US16178638

申请日：2018-11-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Anagnostis Tsiatmas ,  Paul Christiaan Hinnen ,  Elliott Gerard McNamara ,  Thomas Theeuwes ,  Maria Isabel De La Fuente Valentin ,  Mir Homayoun Shahrjerdy ,  Arie Jeffrey Den Boef ,  Shu-jin Wang

IPC: G03F7/20 ,  G06T7/00 ,  G06K9/46

Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.

公开(公告)号：US20210311385A1

公开(公告)日：2021-10-07

申请号：US17347734

申请日：2021-06-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Johan Hendrik Klootwijk ,  Wilhelmus Theodorus Anthonius Johannes Van Den Einden

IPC: G03F1/64 ,  G03F1/62

Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack having a planar substrate and at least one membrane layer, wherein the planar substrate includes an inner region and a border region around the inner region; and selectively removing the inner region of the planar substrate. The membrane assembly includes: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate. The stack is provided with a mechanical protection material configured to mechanically protect the border region during the selectively removing the inner region of the planar substrate.