Abstract:
A cap for a microelectromechanical system device includes a first layer of, e.g., Bismaleimide Triazine (BT) resin material in which a through-aperture is formed, laminated to a second layer of BT resin material that closes the aperture in the first layer, forming a cavity. The first and second layers are laminated with a thermosetting adhesive that is sufficiently thick to encapsulate particles that may remain from a routing operation for forming the apertures. The interior of the cavity, including exposed portions of the adhesive, and the exposed face of the first layer are coated with an electrically conductive paint. The cap is adhered to a substrate over the MEMS device using an electrically conductive adhesive, which couples the conductive paint layer to a ground plane of the substrate. The layer of conductive paint serves as a shield to prevent or reduce electromagnetic interference acting on the MEMS device.
Abstract:
An integrated circuit is formed having an array of memory cells located in the dielectric stack above a semiconductor substrate. Each memory cell has two adjustable resistors and two heating elements. A dielectric material separates the heating elements from the adjustable resistors. One heating element alters the resistance of one of the resistors by applying heat thereto to write data to the memory cell. The other heating element alters the resistance of the other resistor by applying heat thereto to erase data from the memory cell.
Abstract:
The present disclosure is directed to a device and a method for forming a precision temperature sensor switch with a Wheatstone bridge configuration of four resistors and a comparator. When the temperature sensor detects a temperature above a threshold, the switch will change states. The four resistors in the Wheatstone bridge have the same resistance, with three of the resistors having a low temperature coefficient of resistance and the fourth resistor having a high temperature coefficient of resistance. As the temperature increases, the resistance of the fourth resistor will change. The change in resistance of the fourth resistor will change a voltage across the bridge. The voltage across the bridge is coupled to the comparator and compares the voltage with the threshold temperature, such that when the threshold temperature is exceeded, the comparator switches the output off.
Abstract:
An adapter is provided for fluidly coupling a process chamber, such as a diffusion furnace or a process tube, and a fluid source, such as a torch chamber or combustion chamber, of a system for processing semiconductor material. The process tube and the torch chamber include joint segments that can engage directly together to fluidly couple the torch chamber to the process tube for introducing a fluid, such as an oxidizing gas or vapor, into the process tube. The process chamber and the torch chamber are formed of materials having different rates of thermal expansion. The adapter is configured to couple the joint segments of the torch chamber and the process tube while accommodating the differences in thermal expansion between the materials. The adapter may be formed of quartz to couple a quartz torch chamber with a silicon carbide process tube.
Abstract:
A method of forming an embedded wafer level optical package includes attaching a sensor die, PCB bars and an LED on adhesive tape laminated on a carrier, attaching a dam between two light sensitive sensors of the sensor die, encapsulating the sensor die, the PCB bars, the LED, and the dam in an encapsulation layer, debonding the carrier, grinding a top surface of the encapsulation layer, forming vias through the encapsulation layer to the sensor die and the LED, filling the vias with conductive material, metalizing the top surface of the encapsulation layer, dielectric coating of the top surface of the encapsulation layer, dielectric coating of a bottom surface of the encapsulation layer, patterning the dielectric coating of the bottom surface of the encapsulation layer, and plating the patterned dielectric coating of the bottom surface of the encapsulation layer.
Abstract:
The present disclosure is directed to a device and a method for achieving a precise capacitance of a capacitor. The method includes trimming a first capacitance of the capacitor to a second capacitance, the capacitor having a first conductive layer separated from a second conductive layer by a dielectric layer. Changing a first dielectric constant of the dielectric layer to a second dielectric constant, where the first dielectric constant corresponding to the first capacitance and the second dielectric constant corresponding to the second dielectric constant includes heating the dielectric layer above a threshold temperature for a time period. The heat is provided by either one of the plates of the capacitor or from a separate heater.
Abstract:
An integrated circuit package includes an integrated circuit die in a reconstituted substrate. The active side is processed then covered in molding compound while the inactive side is processed. The molding compound on the active side is then partially removed and solder balls are placed on the active side.
Abstract:
The present disclosure is directed to a thin film resistor having a first resistor layer having a first temperature coefficient of resistance and a second resistor layer on the first resistor layer, the second resistor layer having a second temperature coefficient of resistance different from the first temperature coefficient of resistance. The first temperature coefficient of resistance may be positive while the second temperature coefficient of resistance is negative. The first resistor layer may have a thickness in the range of 50 and 150 angstroms and the second resistor layer may have a thickness in the range of 20 and 50 angstroms.
Abstract:
A polymeric layer encompassing the solder elements of a ball grid array in an electronics package. The polymeric layer reinforces the solder bond at the solder ball-component interface by encasing the elements of the ball grid array in a rigid polymer layer that is adhered to the package structure. Stress applied to the package through the ball grid array is transmitted to the package structure through the polymeric layer, bypassing the solder joint and improving mechanical and electrical circuit reliability. In one embodiment of a method for making the polymeric layer, solder elements bonded to external pads on a structure of the package are submerged in a fluidic form of the polymeric layer. The fluidic form is solidified and then a portion of the resulting polymeric layer is removed to make the solder elements accessible for mounting the package to a printed circuit board or other external circuit.
Abstract:
A leadframe includes a die pad and a protective wall surrounding the die pad. A semiconductor die is situated on the die pad. Indentations are formed on the four inner corners of the protective wall adjacent the corners of the semiconductor die.