CAP FOR A MICROELECTROMECHANICAL SYSTEM DEVICE WITH ELECTROMAGNETIC SHIELDING, AND METHOD OF MANUFACTURE
    371.
    发明申请
    CAP FOR A MICROELECTROMECHANICAL SYSTEM DEVICE WITH ELECTROMAGNETIC SHIELDING, AND METHOD OF MANUFACTURE 有权
    具有电磁屏蔽的微电子电子系统装置的封装及其制造方法

    公开(公告)号:US20130322039A1

    公开(公告)日:2013-12-05

    申请号:US13485631

    申请日:2012-05-31

    CPC classification number: H05K9/003

    Abstract: A cap for a microelectromechanical system device includes a first layer of, e.g., Bismaleimide Triazine (BT) resin material in which a through-aperture is formed, laminated to a second layer of BT resin material that closes the aperture in the first layer, forming a cavity. The first and second layers are laminated with a thermosetting adhesive that is sufficiently thick to encapsulate particles that may remain from a routing operation for forming the apertures. The interior of the cavity, including exposed portions of the adhesive, and the exposed face of the first layer are coated with an electrically conductive paint. The cap is adhered to a substrate over the MEMS device using an electrically conductive adhesive, which couples the conductive paint layer to a ground plane of the substrate. The layer of conductive paint serves as a shield to prevent or reduce electromagnetic interference acting on the MEMS device.

    Abstract translation: 用于微机电系统装置的盖子包括第一层,例如其中形成有通孔的双马来酰亚胺三嗪(BT)树脂材料,层压到封闭第一层中的孔的第二层BT树脂材料上,形成 一个空腔。 第一层和第二层与热固性粘合剂层压,该热固性粘合剂足够厚以封装可以从用于形成孔的路由操作保留的颗粒。 空腔的内部,包括粘合剂的暴露部分和第一层的暴露表面涂覆有导电涂料。 使用导电粘合剂将盖子粘附到MEMS装置上的基板上,导电粘合剂将导电涂料层耦合到基板的接地平面。 导电涂料层用作屏蔽,以防止或减少作用在MEMS器件上的电磁干扰。

    RESISTOR THIN FILM MTP MEMORY
    372.
    发明申请
    RESISTOR THIN FILM MTP MEMORY 有权
    电阻薄膜MTP存储器

    公开(公告)号:US20130314972A1

    公开(公告)日:2013-11-28

    申请号:US13953626

    申请日:2013-07-29

    Inventor: Olivier Le Neel

    Abstract: An integrated circuit is formed having an array of memory cells located in the dielectric stack above a semiconductor substrate. Each memory cell has two adjustable resistors and two heating elements. A dielectric material separates the heating elements from the adjustable resistors. One heating element alters the resistance of one of the resistors by applying heat thereto to write data to the memory cell. The other heating element alters the resistance of the other resistor by applying heat thereto to erase data from the memory cell.

    Abstract translation: 形成集成电路,其具有位于半导体衬底上方的电介质堆叠中的存储器单元的阵列。 每个存储单元具有两个可调电阻器和两个加热元件。 电介质材料将加热元件与可调电阻分开。 一个加热元件通过加热来改变其中一个电阻器的电阻以将数据写入存储单元。 另一个加热元件通过加热来改变另一个电阻器的电阻,从而擦除来自存储单元的数据。

    TEMPERATURE SWITCH WITH RESISTIVE SENSOR
    373.
    发明申请
    TEMPERATURE SWITCH WITH RESISTIVE SENSOR 有权
    具有电阻传感器的温度开关

    公开(公告)号:US20130168815A1

    公开(公告)日:2013-07-04

    申请号:US13341286

    申请日:2011-12-30

    CPC classification number: G01K7/20 G01K3/005

    Abstract: The present disclosure is directed to a device and a method for forming a precision temperature sensor switch with a Wheatstone bridge configuration of four resistors and a comparator. When the temperature sensor detects a temperature above a threshold, the switch will change states. The four resistors in the Wheatstone bridge have the same resistance, with three of the resistors having a low temperature coefficient of resistance and the fourth resistor having a high temperature coefficient of resistance. As the temperature increases, the resistance of the fourth resistor will change. The change in resistance of the fourth resistor will change a voltage across the bridge. The voltage across the bridge is coupled to the comparator and compares the voltage with the threshold temperature, such that when the threshold temperature is exceeded, the comparator switches the output off.

    Abstract translation: 本公开涉及用于形成具有四个电阻器和比较器的惠斯登电桥配置的精密温度传感器开关的装置和方法。 当温度传感器检测到温度高于阈值时,开关将改变状态。 惠斯通电桥中的四个电阻具有相同的电阻,其中三个电阻具有低的电阻温度系数,第四电阻具有高的电阻温度系数。 随着温度的升高,第四个电阻的电阻将发生变化。 第四个电阻器的电阻变化会改变跨桥的电压。 桥上的电压耦合到比较器并将电压与阈值温度进行比较,使得当超过阈值温度时,比较器关闭输出。

    ADAPTER FOR COUPLING A DIFFUSION FURNACE SYSTEM
    374.
    发明申请
    ADAPTER FOR COUPLING A DIFFUSION FURNACE SYSTEM 审中-公开
    用于连接扩散炉系统的适配器

    公开(公告)号:US20130168377A1

    公开(公告)日:2013-07-04

    申请号:US13339757

    申请日:2011-12-29

    CPC classification number: H01L21/67017 Y10T29/49826 Y10T137/8593

    Abstract: An adapter is provided for fluidly coupling a process chamber, such as a diffusion furnace or a process tube, and a fluid source, such as a torch chamber or combustion chamber, of a system for processing semiconductor material. The process tube and the torch chamber include joint segments that can engage directly together to fluidly couple the torch chamber to the process tube for introducing a fluid, such as an oxidizing gas or vapor, into the process tube. The process chamber and the torch chamber are formed of materials having different rates of thermal expansion. The adapter is configured to couple the joint segments of the torch chamber and the process tube while accommodating the differences in thermal expansion between the materials. The adapter may be formed of quartz to couple a quartz torch chamber with a silicon carbide process tube.

    Abstract translation: 提供了用于流体耦合诸如扩散炉或处理管的处理室和用于处理半导体材料的系统的流体源(例如割炬室或燃烧室)的适配器。 处理管和割炬室包括可以直接接合在一起以将炬室流体连接到处理管的接合段,用于将诸如氧化气体或蒸气的流体引入到处理管中。 处理室和割炬室由具有不同热膨胀率的材料形成。 适配器被配置成耦合炬室和处理管的接合部分,同时容纳材料之间的热膨胀差异。 适配器可以由石英形成,以将石英炬室与碳化硅工艺管连接。

    EMBEDDED WAFER LEVEL OPTICAL PACKAGE STRUCTURE AND MANUFACTURING METHOD
    375.
    发明申请
    EMBEDDED WAFER LEVEL OPTICAL PACKAGE STRUCTURE AND MANUFACTURING METHOD 有权
    嵌入式水平光学包装结构与制造方法

    公开(公告)号:US20130164867A1

    公开(公告)日:2013-06-27

    申请号:US13335548

    申请日:2011-12-22

    Abstract: A method of forming an embedded wafer level optical package includes attaching a sensor die, PCB bars and an LED on adhesive tape laminated on a carrier, attaching a dam between two light sensitive sensors of the sensor die, encapsulating the sensor die, the PCB bars, the LED, and the dam in an encapsulation layer, debonding the carrier, grinding a top surface of the encapsulation layer, forming vias through the encapsulation layer to the sensor die and the LED, filling the vias with conductive material, metalizing the top surface of the encapsulation layer, dielectric coating of the top surface of the encapsulation layer, dielectric coating of a bottom surface of the encapsulation layer, patterning the dielectric coating of the bottom surface of the encapsulation layer, and plating the patterned dielectric coating of the bottom surface of the encapsulation layer.

    Abstract translation: 一种形成嵌入式晶片级光学封装的方法包括将传感器芯片,PCB条和LED粘贴在层压在载体上的粘合带上,将传感器管芯的两个感光传感器之间的坝连接,封装传感器管芯,PCB条 ,LED和封装层中的坝,使载体脱粘,研磨封装层的顶表面,通过封装层形成通孔到传感器裸片和LED,用导电材料填充通孔,使顶表面金属化 封装层的顶表面的电介质涂层,封装层的底表面的电介质涂层,图案化封装层底表面的电介质涂层,以及镀覆底表面的图案化电介质涂层 的封装层。

    CAPACITANCE TRIMMING WITH AN INTEGRATED HEATER
    376.
    发明申请
    CAPACITANCE TRIMMING WITH AN INTEGRATED HEATER 有权
    与集成加热器的电容调整

    公开(公告)号:US20130141834A1

    公开(公告)日:2013-06-06

    申请号:US13310466

    申请日:2011-12-02

    Abstract: The present disclosure is directed to a device and a method for achieving a precise capacitance of a capacitor. The method includes trimming a first capacitance of the capacitor to a second capacitance, the capacitor having a first conductive layer separated from a second conductive layer by a dielectric layer. Changing a first dielectric constant of the dielectric layer to a second dielectric constant, where the first dielectric constant corresponding to the first capacitance and the second dielectric constant corresponding to the second dielectric constant includes heating the dielectric layer above a threshold temperature for a time period. The heat is provided by either one of the plates of the capacitor or from a separate heater.

    Abstract translation: 本公开涉及一种用于实现电容器的精确电容的装置和方法。 该方法包括将电容器的第一电容调整为第二电容,该电容器具有通过电介质层与第二导电层分离的第一导电层。 将电介质层的第一介电常数改变到第二介电常数,其中对应于第一电容的第一介电常数和对应于第二介电常数的第二介电常数包括将电介质层加热到阈值温度一段时间。 热量由电容器的任一个板或从单独的加热器提供。

    Multi-layer via-less thin film resistor
    378.
    发明授权
    Multi-layer via-less thin film resistor 有权
    多层无通孔薄膜电阻

    公开(公告)号:US08436426B2

    公开(公告)日:2013-05-07

    申请号:US12862594

    申请日:2010-08-24

    Abstract: The present disclosure is directed to a thin film resistor having a first resistor layer having a first temperature coefficient of resistance and a second resistor layer on the first resistor layer, the second resistor layer having a second temperature coefficient of resistance different from the first temperature coefficient of resistance. The first temperature coefficient of resistance may be positive while the second temperature coefficient of resistance is negative. The first resistor layer may have a thickness in the range of 50 and 150 angstroms and the second resistor layer may have a thickness in the range of 20 and 50 angstroms.

    Abstract translation: 本公开涉及具有第一电阻温度系数的第一电阻层和第一电阻层上的第二电阻层的薄膜电阻器,第二电阻层具有与第一温度系数不同的第二温度系数 的阻力。 电阻的第一温度系数可以为正,而第二温度系数为负。 第一电阻层可以具有在50和150埃范围内的厚度,并且第二电阻层的厚度可以在20和50埃的范围内。

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