公开(公告)号：US20100148323A1

公开(公告)日：2010-06-17

申请号：US12710482

申请日：2010-02-23

申请人： Cheng-Guo Jin ,  Yuichiro Sasaki ,  Bunji Mizuno

发明人： Cheng-Guo Jin ,  Yuichiro Sasaki ,  Bunji Mizuno

IPC分类号： H01L29/06 ,  H01L21/38

CPC分类号： H01L21/2236 ,  H01L21/26513 ,  H01L21/268 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

摘要： A subject of the present invention is to realize an impurity doping not to bring about a rise of a substrate temperature. Another subject of the present invention is to measure optically physical properties of a lattice defect generated by the impurity doping step to control such that subsequent steps are optimized. An impurity doping method, includes a step of doping an impurity into a surface of a solid state base body, a step of measuring an optical characteristic of an area into which the impurity is doped, a step of selecting annealing conditions based on a measurement result to meet the optical characteristic of the area into which the impurity is doped, and a step of annealing the area into which the impurity is doped, based on the selected annealing conditions.

摘要翻译： 本发明的目的是实现杂质掺杂不会引起衬底温度的升高。 本发明的另一主题是测量由杂质掺杂步骤产生的晶格缺陷的光学物理性能，以便控制以使后续步骤被优化。 杂质掺杂方法包括将杂质掺杂到固态基体的表面的步骤，测量掺杂杂质的区域的光学特性的步骤，基于测量结果选择退火条件的步骤 以满足掺杂杂质的区域的光学特性，以及基于所选择的退火条件对杂质掺杂的区域进行退火的步骤。

公开(公告)号：US20090233383A1

公开(公告)日：2009-09-17

申请号：US11884924

申请日：2006-02-14

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

IPC分类号： H01L21/66 ,  B05C11/00

CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/2001

摘要： It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

摘要翻译： 旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。 将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。 真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8， 与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。 每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。 控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

公开(公告)号：US20080269249A2

公开(公告)日：2008-10-30

申请号：US11302825

申请日：2005-12-14

申请人： Mark Hellberg ,  Andrew Rusinko ,  Alan Henderson ,  Cheng Guo ,  Mark Hadden ,  Helene Decornez

发明人： Mark Hellberg ,  Andrew Rusinko ,  Alan Henderson ,  Cheng Guo ,  Mark Hadden ,  Helene Decornez

IPC分类号： A61K31/497 ,  C07D403/02 ,  A61K31/4965

CPC分类号： C07D471/04 ,  A61K31/4965 ,  A61K31/497 ,  C07D401/04 ,  C07D401/14 ,  C07D403/14

摘要： Methods for using aminopyrazine analogs to treat rho kinase-mediated diseases or rho kinase-mediated conditions, including controlling intraocular pressure and treating glaucoma, are disclosed. Ophthalmic pharmaceutical compositions useful in the treatment of eye diseases such as glaucoma, and additionally useful for controlling intraocular pressure, the compositions comprising an effective amount of aminopyrazine analogs, are also disclosed.

摘要翻译： 公开了使用氨基吡嗪类似物治疗rho激酶介导的疾病或rho激酶介导的病症（包括控制眼内压和治疗青光眼）的方法。 还公开了可用于治疗眼睛疾病例如青光眼并且还可用于控制眼内压的眼用药物组合物，所述组合物包含有效量的氨基吡嗪类似物。

公开(公告)号：US20080194086A1

公开(公告)日：2008-08-14

申请号：US11628454

申请日：2005-05-31

申请人： Yuichiro Sasaki ,  Bunji Mizuno ,  Katsumi Okashita ,  Cheng-Guo Jin ,  Hiroyuki Ito

发明人： Yuichiro Sasaki ,  Bunji Mizuno ,  Katsumi Okashita ,  Cheng-Guo Jin ,  Hiroyuki Ito

IPC分类号： H01L21/26 ,  H01L21/265

CPC分类号： H01L21/2236 ,  H01J37/32412

摘要： There is provided a method of introducing impurity capable of efficiently realizing a shallow impurity introduction. The impurity introducing method includes a first step of making a surface of a semiconductor layer to be amorphous by reacting plasma composed of particles which are electrically inactive in the semiconductor layer to a surface of a solid base body including the semiconductor layer, and a second step of introducing impurity to the surface of the solid base body.After performing the first step, by performing the second step, an amorphous layer with fine pores is formed on the surface of the solid base body including the semiconductor layer, and impurity are introduced in the amorphous layer to form an impurity introducing layer.

摘要翻译： 提供了能够有效地实现浅杂质导入的杂质的引入方法。 杂质导入方法包括：第一步骤，通过将由半导体层中的电惰性的粒子构成的等离子体与包含该半导体层的固体基体的表面反应，使半导体层的表面成为无定形，第二工序 将杂质引入固体基体的表面。 进行第一工序后，通过进行第二工序，在包含半导体层的固体基体的表面上形成具有细孔的非晶质层，在非晶层中引入杂质，形成杂质导入层。

公开(公告)号：US20080153813A1

公开(公告)日：2008-06-26

申请号：US11960476

申请日：2007-12-19

申请人： Hwang-Hsing CHEN ,  Andrew RUSINKO ,  Mark R. HELLBERG ,  Bryon S. SEVERNS ,  Alan J. HENDERSON ,  Cheng GUO ,  Mark HADDEN

发明人： Hwang-Hsing CHEN ,  Andrew RUSINKO ,  Mark R. HELLBERG ,  Bryon S. SEVERNS ,  Alan J. HENDERSON ,  Cheng GUO ,  Mark HADDEN

IPC分类号： A61K31/5025 ,  A61K31/5513 ,  A61K31/5377 ,  A61P27/02

CPC分类号： A61K31/5025 ,  A61K9/0048

摘要： Methods for using 6-aminoimidazo[1,2-b]pyridazine analogs are disclosed herein to treat rho kinase-mediated diseases or rho kinase-mediated conditions, including controlling intraocular pressure and treating glaucoma, are disclosed. Ophthalmic pharmaceutical compositions useful in the treatment of eye diseases such as glaucoma, and additionally useful for controlling intraocular pressure, the compositions comprising an effective amount of 6-aminoimidazo[1,2-b]pyridazine analogs, are disclosed herein.

摘要翻译： 本文公开了使用6-氨基咪唑并[1,2-b]哒嗪类似物的方法，用于治疗rho激酶介导的疾病或rho激酶介导的病症，包括控制眼内压和治疗青光眼。 用于治疗眼睛疾病如青光眼的眼用药物组合物，另外可用于控制眼内压，本文公开了包含有效量的6-氨基咪唑并[1,2-b]哒嗪类似物的组合物。

公开(公告)号：US20070212837A1

公开(公告)日：2007-09-13

申请号：US11596372

申请日：2005-05-12

申请人： Bunji Mizuno ,  Yuichiro Sasaki ,  Ichiro Nakayama ,  Hiroyuki Ito ,  Tomohiro Okumura ,  Cheng-Guo Jin ,  Katsumi Okashita ,  Hisataka Kanada

发明人： Bunji Mizuno ,  Yuichiro Sasaki ,  Ichiro Nakayama ,  Hiroyuki Ito ,  Tomohiro Okumura ,  Cheng-Guo Jin ,  Katsumi Okashita ,  Hisataka Kanada

IPC分类号： H01L21/77

CPC分类号： H01L21/26513 ,  H01L21/26566 ,  H01L21/28035 ,  H01L29/7833

摘要： An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.

摘要翻译： 本发明的目的是提供一种半导体器件，其中具有均匀的性质并提供高产率。 提供了工艺步骤，其中在随后的工艺步骤的掺杂和退火工艺步骤中调整变化，以便最终消除由干蚀刻引起的衬底中的平面内变化，并且在衬底中提供优异的面内稠度。

公开(公告)号：US20050277273A1

公开(公告)日：2005-12-15

申请号：US11153572

申请日：2005-06-15

申请人： Yuichiro Sasaki ,  Bunji Mizuno ,  Cheng-Guo Jin

发明人： Yuichiro Sasaki ,  Bunji Mizuno ,  Cheng-Guo Jin

IPC分类号： H01L21/223 ,  C30B1/00 ,  C30B3/00 ,  C30B5/00 ,  C30B28/02 ,  H01L21/8238 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/26506 ,  H01L21/223 ,  H01L21/2236 ,  H01L21/2254 ,  Y10T117/10

摘要： A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

摘要翻译： 用于引入杂质的方法包括在半导体衬底的表面形成非晶层的步骤，以及在半导体衬底上形成非晶化的浅杂质引入层的步骤以及因此使用的装置。 特别地，用于形成非晶层的步骤是用于将等离子体照射到半导体衬底的表面的步骤，并且用于形成浅掺杂杂质的层的步骤是将杂质引入已经被制成无定形的表面的步骤。

公开(公告)号：US06746805B1

公开(公告)日：2004-06-08

申请号：US09698706

申请日：2000-10-27

申请人： Cheng Guo ,  Stephen Moffatt

发明人： Cheng Guo ,  Stephen Moffatt

IPC分类号： G03F900

CPC分类号： G03F1/20 ,  H01J2237/31794

摘要： A method for forming a mask assembly for use in lithography, typically electron-beam lithography, first forms in a substrate one half of a plurality of opening therethrough and then fills the openings with a removable fill material. Thereafter are formed the other half of the openings which are then filled with the removable fill material. After all the openings have been formed and filled, a support membrane is formed over the substrate and covers the filled windows. A mask layer is then formed over the membrane and patterned. The fill is then removed from all of the windows.

摘要翻译： 用于形成用于光刻（例如电子束光刻）的掩模组件的方法首先在衬底中形成通过其中的多个开口的一半，然后用可移除的填充材料填充开口。 此后形成开口的另一半，然后填充可移除的填充材料。 在所有开口已经形成和填充之后，在基板上形成支撑膜，并覆盖填充的窗户。 然后在膜上形成掩模层并图案化。 然后从所有窗口中删除填充。

公开(公告)号：US20220411860A1

公开(公告)日：2022-12-29

申请号：US17373295

申请日：2021-07-12

申请人： Jingyue Ju ,  Xiaoxu Li ,  Xin Chen ,  Zengmin Li ,  Shiv Kumar ,  Shundi Shi ,  Cheng Guo ,  Jianyi Ren ,  Min-Kang Hsieh ,  Minchen Chien ,  Chuanjuan Tao ,  Ece Erturk ,  Sergey Kalachikov ,  James J. Russo

发明人： Jingyue Ju ,  Xiaoxu Li ,  Xin Chen ,  Zengmin Li ,  Shiv Kumar ,  Shundi Shi ,  Cheng Guo ,  Jianyi Ren ,  Min-Kang Hsieh ,  Minchen Chien ,  Chuanjuan Tao ,  Ece Erturk ,  Sergey Kalachikov ,  James J. Russo

IPC分类号： C12Q1/6869 ,  C07H19/10 ,  C07H19/14 ,  C07H19/20

摘要： Disclosed herein, inter alfa, are compounds, compositions, and methods of use thereof in the sequencing of a nucleic acid.

公开(公告)号：US09384962B2

公开(公告)日：2016-07-05

申请号：US13082387

申请日：2011-04-07

申请人： Guang-Yaw Hwang ,  Chun-Hsien Lin ,  Hung-Ling Shih ,  Jiunn-Hsiung Liao ,  Zhi-Cheng Lee ,  Shao-Hua Hsu ,  Yi-Wen Chen ,  Cheng-Guo Chen ,  Jung-Tsung Tseng ,  Chien-Ting Lin ,  Tong-Jyun Huang ,  Jie-Ning Yang ,  Tsung-Lung Tsai ,  Po-Jui Liao ,  Chien-Ming Lai ,  Ying-Tsung Chen ,  Cheng-Yu Ma ,  Wen-Han Hung ,  Che-Hua Hsu

发明人： Guang-Yaw Hwang ,  Chun-Hsien Lin ,  Hung-Ling Shih ,  Jiunn-Hsiung Liao ,  Zhi-Cheng Lee ,  Shao-Hua Hsu ,  Yi-Wen Chen ,  Cheng-Guo Chen ,  Jung-Tsung Tseng ,  Chien-Ting Lin ,  Tong-Jyun Huang ,  Jie-Ning Yang ,  Tsung-Lung Tsai ,  Po-Jui Liao ,  Chien-Ming Lai ,  Ying-Tsung Chen ,  Cheng-Yu Ma ,  Wen-Han Hung ,  Che-Hua Hsu

IPC分类号： H01L21/28 ,  H01L21/02

CPC分类号： H01L29/517 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7845 ,  H01L29/7846

摘要： A method of manufacturing a metal gate is provided. The method includes providing a substrate. Then, a gate dielectric layer is formed on the substrate. A multi-layered stack structure having a work function metal layer is formed on the gate dielectric layer. An O2 ambience treatment is performed on at least one layer of the multi-layered stack structure. A conductive layer is formed on the multi-layered stack structure.

摘要翻译： 提供一种制造金属栅极的方法。 该方法包括提供基板。 然后，在基板上形成栅极电介质层。 在栅极电介质层上形成具有功函数金属层的多层堆叠结构。 在多层堆叠结构的至少一层上进行O2气氛处理。 在多层堆叠结构上形成导电层。