公开(公告)号：US20090111202A1

公开(公告)日：2009-04-30

申请号：US11980472

申请日：2007-10-31

Applicant: Yu-Chuan Liu ,  Hung-Cheng Lin ,  Wen-Chieh Hsu ,  Chia-Ming Lee ,  Jenn-Hwa Fu

Inventor： Yu-Chuan Liu ,  Hung-Cheng Lin ,  Wen-Chieh Hsu ,  Chia-Ming Lee ,  Jenn-Hwa Fu

IPC: H01L33/00

CPC classification number: H01L33/22 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007

Abstract: A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom surface of the recesses; filling the recesses with an Epi layer; then covering the protrusive portions and starting self bonding upwards the epitaxy to finish the Epi layer structure. Such a self bonding epitaxy growing technique can prevent cavity generation caused by parameter errors of the epitaxy and reduce defect density, and improve the quality of the Epi layer and increase internal quantum efficiency.

Abstract translation: 一种用于自粘合外延的方法包括在半导体照明元件的衬底表面上形成钝化层; 蚀刻以形成具有位于其上的钝化层的凹部和突出部分; 开始在凹槽的底表面上形成外延; 用Epi层填充凹槽; 然后覆盖突起部分并开始自身向上附着外延以完成Epi层结构。 这种自粘合外延生长技术可以防止由外延参数误差引起的空腔产生并降低缺陷密度，提高Epi层的质量并提高内部量子效率。

公开(公告)号：US20070026658A1

公开(公告)日：2007-02-01

申请号：US11194163

申请日：2005-08-01

Applicant: Chia-Ming Lee ,  Tsung-Liang Chen

Inventor： Chia-Ming Lee ,  Tsung-Liang Chen

IPC: H01L21/28 ,  H01L21/302

CPC classification number: H01L21/0254 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02579 ,  H01L21/0262

Abstract: In a method of forming an as-grown active p-type III-V nitride compound layer, a substrate is introduced and heated in a reaction chamber. N2 carrier gas and reactive compounds including a source compound of a group III element, a nitrogen source compound, and a p-type impurity are fed in the reaction chamber. A chemical reaction occurs to form an as-grown active p-type III-V nitride compound layer.

Abstract translation: 在形成生长中的活性p型III-V族氮化物层的方法中，将基底引入并在反应室中加热。 N 2载体和包含III族元素的源化合物，氮源化合物和p型杂质的反应性化合物进料到反应室中。 发生化学反应以形成生长的活性p型III-V族氮化物层。

公开(公告)号：US20050224813A1

公开(公告)日：2005-10-13

申请号：US10815091

申请日：2004-03-31

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: B41J2/12 ,  H01L25/075 ,  H01L33/50

CPC classification number: H01L33/507 ,  H01L25/0756 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device comprises a light-emitting unit including a plurality of first connecting pads, a base substrate including a plurality of second connecting pads, and a plurality of conductive bumps that connect the first connecting pads of the light-emitting unit to the second connecting pads of the base substrate. In the manufacturing process, a reflow process is performed to bond the conductive bumps to the first and second connecting pads. The light-emitting unit is configured to emit a first light radiation upon the application of an electric current flow, and the base substrate is configured to emit a second light radiation when stimulated by the first light radiation.

Abstract translation: 发光装置包括：发光单元，包括多个第一连接焊盘;基板，包括多个第二连接焊盘;以及多个导电凸块，其将所述发光单元的第一连接焊盘连接到 基底基板的第二连接焊盘。 在制造过程中，执行回流处理以将导电凸块接合到第一和第二连接焊盘。 发光单元被配置为在施加电流时发射第一光辐射，并且基底基板被配置为当被第一光辐射刺激时发射第二光辐射。

公开(公告)号：US20050224812A1

公开(公告)日：2005-10-13

申请号：US10814872

申请日：2004-03-31

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: H01L27/15 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50

CPC classification number: H01L33/508 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A light-emitting device includes a multi-layer structure configured to emit a first light radiation, and a cap layer covering a surface area of the multi-layer structure while leaving exposed electrode areas defined thereon, wherein the cap layer is made of a material capable of emitting at least one second light radiation when stimulated by the first light radiation. The cap layer, being made of a material blend incorporating a passivation material and a luminescent material compound, is coated on the multi-layer structure.

Abstract translation: 发光器件包括被配置为发射第一光辐射的多层结构，以及覆盖多层结构的表面区域同时留下限定在其上的暴露的电极区域的覆盖层，其中，盖层由材料制成 能够在被第一光辐射刺激时发射至少一个第二光辐射。 覆盖层由包含钝化材料和发光材料化合物的材料混合物制成，涂覆在多层结构上。

公开(公告)号：US06881602B2

公开(公告)日：2005-04-19

申请号：US10410989

申请日：2003-04-08

Applicant: Chia-Ming Lee ,  Jen-Inn Chyi

Inventor： Chia-Ming Lee ,  Jen-Inn Chyi

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/14 ,  H01L21/00

CPC classification number: H01L33/025 ,  H01L33/0016 ,  H01L33/02 ,  H01L33/14

Abstract: According to a preferred embodiment of the present invention, there is provided a novel and optimal semiconductor light emitting device comprising a substrate, an n layer disposed co-extensively on the substrate, an n++ layer disposed non-extensively and flush on one side of the n layer. Furthermore, a p+ layer is disposed co-extensively on the n++ layer of the LED according to the invention, with a p layer further disposed co-extensively on the p+ layer. A p cladding layer is disposed co-extensively on the p layer. A multiple quantum well (MQW) layer is disposed co-extensively on the p cladding layer, and an n cladding layer is further disposed co-extensively on the MQW layer. A second n layer is disposed co-extensively on the n cladding layer. An n+ layer is disposed co-extensively on the second n layer of the LED according to the invention. After partially etching the device, an n electrode is formed opposite n++ layer non-extensively on the surface of n layer, and a second n electrode is formed non-extensively (without etching) upon the n+ layer.

Abstract translation: 根据本发明的优选实施例，提供了一种新颖且最佳的半导体发光器件，其包括基底，共同设置在基底上的n层，设置非基底层的n + 在n层的一侧上非常平滑地冲洗。 此外，根据本发明，将ap + +层共同地布置在LED的n + ++层上，其中ap层进一步同时布置在p < SUP> + 层。 p包层共同设置在p层上。 多量子阱（MQW）层共同设置在p包覆层上，并且n包覆层进一步同时布置在MQW层上。 第n层被共同设置在n包层上。 根据本发明，n + SUP层被共同地布置在LED的第二n层上。 在部分蚀刻该器件之后，在n层的表面上非常广泛地形成n电极，并且在n层上形成第二n电极（非蚀刻） ^{+ 层。}

公开(公告)号：US08407887B2

公开(公告)日：2013-04-02

申请号：US12702903

申请日：2010-02-09

Applicant: Chia-Ming Lee ,  Shou-Yuan Yang

Inventor： Chia-Ming Lee ,  Shou-Yuan Yang

IPC: B23P19/00

CPC classification number: B23P19/00 ,  B23P2700/10 ,  H01L21/67092 ,  H01L21/67138 ,  Y10T29/53265 ,  Y10T29/5327 ,  Y10T29/53383 ,  Y10T29/53396

Abstract: A pressing apparatus is adapted for pressing a plurality of heat sinks on a circuit board, and includes a frame body and a plurality of pressing tools. The frame body includes a platform configured for placement of the circuit board thereon, and a mounting frame disposed above and spaced apart from the platform. The pressing tools are disposed at respective positions on the mounting frame. Each of the pressing tools includes an axle component, a universal joint unit disposed at a bottom end of the axle component, and a pressing head connected to the universal joint unit. The axle component extends downwardly between the platform and the mounting frame, and is configured to be resiliently and vertically movable. The pressing head is adapted for contacting one of the heat sinks, and is rotatable about the axle component by virtue of the universal joint unit.

Abstract translation: 一种按压装置适用于在电路板上按压多个散热片，并且包括框体和多个按压工具。 框架主体包括被配置用于将电路板放置在其上的平台和设置在平台上方并与平台间隔开的安装框架。 按压工具设置在安装框架上的相应位置。 每个按压工具包括轴部件，设置在轴部件的底端处的万向接头单元和连接到万向接头单元的按压头。 轴组件在平台和安装框架之间向下延伸，并且构造成可弹性地和垂直地移动。 压头适于接触散热器中的一个，并且可以通过万向节单元绕轴部件旋转。

公开(公告)号：US20090298213A1

公开(公告)日：2009-12-03

申请号：US12538427

申请日：2009-08-10

Applicant: Chia-Ming LEE ,  Hung-Cheng Lin ,  Jen-Inn Chyi

Inventor： Chia-Ming LEE ,  Hung-Cheng Lin ,  Jen-Inn Chyi

IPC: H01L33/00

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02647 ,  H01L21/02658 ,  H01L33/22

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.

公开(公告)号：US20090186435A1

公开(公告)日：2009-07-23

申请号：US12018086

申请日：2008-01-22

Applicant: Nien-Tze Yeh ,  Chia-Ming Lee

Inventor： Nien-Tze Yeh ,  Chia-Ming Lee

IPC: H01L33/00

CPC classification number: H01L33/22

Abstract: The present invention discloses a surface roughening method for an LED substrate, which uses a grinding technology and an abrasive paper of from No. 300 to No. 6000 to grind the surface of a substrate to form a plurality of irregular concave zones and convex zones on the surface of the substrate. Next, a semiconductor light emitting structure is formed on the surface of the substrate. The concave zones and convex zones can scatter and diffract the light inside LED, reduce the horizontally-propagating light between the substrate and the semiconductor layer, decrease the probability of total reflection and promote LED light extraction efficiency.

Abstract translation: 本发明公开了一种用于LED基板的表面粗糙化方法，其使用研磨技术和300〜6000号的研磨纸来研磨基板的表面，以形成多个不规则凹区域和凸区域 衬底的表面。 接下来，在基板的表面上形成半导体发光结构。 凹区和凸区可以散射和衍射LED内部的光，减少基板与半导体层之间的水平传播光，降低全反射的可能性，提高LED光提取效率。

公开(公告)号：US20090147480A1

公开(公告)日：2009-06-11

申请号：US12216017

申请日：2008-06-27

Applicant: Chia-Ming Lee

Inventor： Chia-Ming Lee

IPC: H05K7/20

CPC classification number: H01L23/467 ,  H01L23/4093 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A heat sink and an electronic apparatus using the same are disclosed. The heat sink comprises a fin structure and a fastening assembly; the fastening assembly comprises an adjustable positioning member, an elastic member, and a hooking member, the elastic member being disposed between the hooking member and the fin structure such that the adjustable positioning member combines the hooking member, the elastic member, and the fin structure; wherein the hooking member may secure the heat sink onto an electronic component, and the adjustable positioning member may be used to adjust the tightness between the heat sink and the electronic component.

Abstract translation: 公开了一种散热器和使用其的电子设备。 散热器包括翅片结构和紧固组件; 所述紧固组件包括可调定位构件，弹性构件和钩构件，所述弹性构件设置在所述钩构件和所述翅片结构之间，使得所述可调定位构件组合所述钩构件，所述弹性构件和所述翅片结构 ; 其中所述钩挂构件可将所述散热器固定在电子部件上，并且所述可调定位构件可用于调节所述散热器和所述电子部件之间的紧密度。

公开(公告)号：US20060189019A1

公开(公告)日：2006-08-24

申请号：US11063479

申请日：2005-02-23

Applicant: Chia-Ming Lee ,  Tsung Chen ,  I-Ling Chen ,  Yu-Chuan Liu ,  Jen-Inn Chyi

Inventor： Chia-Ming Lee ,  Tsung Chen ,  I-Ling Chen ,  Yu-Chuan Liu ,  Jen-Inn Chyi

IPC: H01L21/00

CPC classification number: C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661

Abstract: In a method of forming a crystalline GaN-based material, a first nucleation layer is formed on a substrate at a first temperature, followed with forming a second nucleation layer at a second temperature different from the first temperature. The first and second nucleation layers are composed of AlxInyGa(1-x-y)N. Subsequently, a layer of a crystalline GaN-based compound is epitaxy grown on the second nucleation layer.

Abstract translation: 在形成结晶GaN基材料的方法中，在第一温度下在基板上形成第一成核层，随后在与第一温度不同的第二温度下形成第二成核层。 第一和第二成核层由Al x Ga y（1-x-y）N组成。 随后，在第二成核层上生长一层结晶的GaN基化合物外延生长。