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    APPARATUS AND METHOD FOR REDUCING OPTICAL CROSS-TALK IN IMAGE SENSORS
    32.
    发明申请
    APPARATUS AND METHOD FOR REDUCING OPTICAL CROSS-TALK IN IMAGE SENSORS 审中-公开
    用于减少图像传感器中的光学交叉的装置和方法

    公开(公告)号：US20090020838A1

    公开(公告)日：2009-01-22

    申请号：US11779122

    申请日：2007-07-17

    Applicant: Chin-Min Lin ,  Dun-Nian Yaung ,  Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Chun-Ming Su

    Inventor： Chin-Min Lin ,  Dun-Nian Yaung ,  Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Chun-Ming Su

    IPC: H01L31/0232 ,  H01L21/00

    CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H04N9/045

    Abstract: An image sensor device includes a semiconductor substrate having a front surface and a back surface; an array of pixels formed on the front surface of the semiconductor substrate, each pixel being adapted for sensing light radiation; an array of color filters formed over the plurality of pixels, each color filter being adapted for allowing a wavelength of light radiation to reach at least one of the plurality of pixels; and an array of micro-lens formed over the array of color filters, each micro-lens being adapted for directing light radiation to at least one of the color filters in the array. The array of color filters includes structure adapted for blocking light radiation that is traveling towards a region between adjacent micro-lens.

    Abstract translation: 图像传感器装置包括具有前表面和后表面的半导体衬底; 形成在所述半导体衬底的前表面上的像素阵列，每个像素适于感测光辐射; 形成在所述多个像素上的滤色器阵列，每个滤色器适于允许光辐射的波长到达所述多个像素中的至少一个像素; 以及形成在滤色器阵列上的微透镜阵列，每个微透镜适于将光辐射引导到阵列中的至少一个滤色器。 滤色器阵列包括适于阻挡朝向相邻微透镜之间的区域传播的光辐射的结构。

    BACKSIDE DEPLETION FOR BACKSIDE ILLUMINATED IMAGE SENSORS
    33.
    发明申请
    BACKSIDE DEPLETION FOR BACKSIDE ILLUMINATED IMAGE SENSORS 有权
    背面照明图像传感器的背面

    公开(公告)号：US20080224247A1

    公开(公告)日：2008-09-18

    申请号：US12107199

    申请日：2008-04-22

    Applicant: Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Ching-Chun Wang

    Inventor： Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Ching-Chun Wang

    IPC: H01L31/0232 ,  H01L31/18

    CPC classification number: H01L31/0232 ,  H01L27/14603 ,  H01L27/1464 ,  H01L27/14683

    Abstract: A backside illuminated image sensor is provided which includes a substrate having a front side and a backside, a sensor formed in the substrate at the front side, the sensor including at least a photodiode, and a depletion region formed in the substrate at the backside, a depth of the depletion region is less than 20% of a thickness of the substrate.

    Abstract translation: 提供了背面照明图像传感器，其包括具有前侧和后侧的基板，形成在前侧的基板中的传感器，所述传感器至少包括光电二极管，以及在背面形成在基板中的耗尽区域， 耗尽区的深度小于衬底厚度的20％。

    Lateral P-I-N photodiode element with high quantum efficiency for a CMOS image sensor
    34.
    发明授权
    Lateral P-I-N photodiode element with high quantum efficiency for a CMOS image sensor 有权
    用于CMOS图像传感器的具有高量子效率的横向P-I-N光电二极管元件

    公开(公告)号：US06323054B1

    公开(公告)日：2001-11-27

    申请号：US09583398

    申请日：2000-05-31

    Applicant: Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Chien-Hsien Tseng ,  Ching-Chun Wang

    Inventor： Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Chien-Hsien Tseng ,  Ching-Chun Wang

    IPC: H01L2100

    CPC classification number: H01L27/14609

    Abstract: A process for fabricating a lateral photodiode element, for an image sensor cell, with an increased depletion region, has been developed. The process features protecting a portion of the semiconductor substrate from ion implantation procedures used to create the P well, and the N well components of the lateral photodiode element. The protected region, or the space between the P well and N well regions, allows a larger depletion region to be realized, when compared to lateral photodiode elements in which the N well and P well regions butt. The space between the P well and N well regions, between about 0.2 to 0.4 um, result in the desired P well—intrinsic or P type semiconductor substrate—N well, (P-I-N), lateral photodiode element.

    Abstract translation: 已经开发了用于图像传感器单元的具有增加的耗尽区域的横向光电二极管元件的制造方法。 该工艺特征是保护半导体衬底的一部分免受用于产生P阱的离子注入工艺和横向光电二极管元件的N阱部件。 与N阱和P阱区对接的横向光电二极管元件相比，受保护区域或P阱和N阱区域之间的空间允许实现更大的耗尽区域。 在P阱和N阱区之间的间隔在约0.2至0.4μm之间，导致所需的P本征或P型半导体衬底N阱（P-I-N），横向光电二极管元件。

    Porous Si as CMOS image sensor ARC layer
    35.
    发明授权
    Porous Si as CMOS image sensor ARC layer 有权
    多孔Si作为CMOS图像传感器ARC层

    公开(公告)号：US08686527B2

    公开(公告)日：2014-04-01

    申请号：US13556932

    申请日：2012-07-24

    Applicant: Shyh-Fann Ting ,  Yen-Ting Chiang ,  Ching-Chun Wang

    Inventor： Shyh-Fann Ting ,  Yen-Ting Chiang ,  Ching-Chun Wang

    IPC: H01L31/0232

    CPC classification number: H01L27/1464 ,  H01L27/14687

    Abstract: A semiconductor device is provided. The semiconductor device includes metallization layers supported by a substrate, a diode and a partially doped silicon layer disposed over the metallization layers, a buffer layer disposed over the diode and the partially doped silicon layer; and an anti-reflective coating disposed over the buffer layer, the anti-reflective coating formed from a porous silicon.

    Abstract translation: 提供半导体器件。 半导体器件包括由衬底支撑的金属化层，设置在金属化层上的二极管和部分掺杂的硅层，设置在二极管和部分掺杂硅层上的缓冲层; 以及设置在缓冲层上的抗反射涂层，由多孔硅形成的抗反射涂层。

    Backside Surface Treatment of Semiconductor Chips
    36.
    发明申请
    Backside Surface Treatment of Semiconductor Chips 有权
    半导体芯片的背面表面处理

    公开(公告)号：US20130040446A1

    公开(公告)日：2013-02-14

    申请号：US13205179

    申请日：2011-08-08

    Applicant: Chih-Yu Lai ,  Cheng-Ta Wu ,  Kai-Chun Hsu ,  Yeur-Luen Tu ,  Ching-Chun Wang ,  Chia-Shiung Tsai

    Inventor： Chih-Yu Lai ,  Cheng-Ta Wu ,  Kai-Chun Hsu ,  Yeur-Luen Tu ,  Ching-Chun Wang ,  Chia-Shiung Tsai

    IPC: H01L21/265

    CPC classification number: H01L27/14687 ,  H01L27/1464

    Abstract: A method includes performing a grinding to a backside of a semiconductor substrate, wherein a remaining portion of the semiconductor substrate has a back surface. A treatment is then performed on the back surface using a method selected from the group consisting essentially of a dry treatment and a plasma treatment. Process gases that are used in the treatment include oxygen (O2). The plasma treatment is performed without vertical bias in a direction perpendicular to the back surface.

    Abstract translation: 一种方法包括对半导体衬底的背面进行研磨，其中半导体衬底的剩余部分具有背面。 然后使用基本上由干法处理和等离子体处理组成的组中的方法在背面进行处理。 用于处理的工艺气体包括氧（O 2）。 在垂直于后表面的方向上进行等离子体处理而没有垂直偏压。

    Method and structure for reducing cross-talk in image sensor devices
    37.
    发明授权
    Method and structure for reducing cross-talk in image sensor devices 有权
    减少图像传感器设备串扰的方法和结构

    公开(公告)号：US07923279B2

    公开(公告)日：2011-04-12

    申请号：US12405454

    申请日：2009-03-17

    Applicant: Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

    Inventor： Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Han-Chi Liu ,  Chun-Ming Su

    IPC: H01L21/00

    CPC classification number: H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

    Abstract: Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

    Abstract translation: 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的半导体衬底，在半导体衬底的前侧形成第一隔离结构，从背面减薄半导体衬底，并在第二隔离结构的背面形成第二隔离结构 半导体衬底。 第一和第二隔离结构相对于彼此移位。

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