公开(公告)号：US07968867B2

公开(公告)日：2011-06-28

申请号：US12453183

申请日：2009-05-01

Applicant: Chiu-Lin Yao ,  Ta-Cheng Hsu

Inventor： Chiu-Lin Yao ,  Ta-Cheng Hsu

IPC: H01L33/00

CPC classification number: H01L33/06 ,  H01L2933/0083

Abstract: A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.

Abstract translation: 公开了一种发光器件及其制造方法。 发光装置是包括生长衬底，n型半导体层，量子阱有源层和p型半导体层的半导体器件。 它结合了全息和量子阱相互扩散（QWI）以形成具有二维周期性变化的介电常数或量子阱活性层中的二维周期性变化的材料组成的光子晶体发光器件。 光子晶体发光器件可以提高内部效率和光提取效率。

公开(公告)号：US20110121291A1

公开(公告)日：2011-05-26

申请号：US13022098

申请日：2011-02-07

Applicant: Shih-I Chen ,  Chia-Liang Hsu ,  Chiu-Lin Yao ,  Tzu-Chieh Hsu ,  Chien-Fu Huang

Inventor： Shih-I Chen ,  Chia-Liang Hsu ,  Chiu-Lin Yao ,  Tzu-Chieh Hsu ,  Chien-Fu Huang

IPC: H01L33/10

CPC classification number: H01L33/46 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/38

Abstract: A light-emitting element includes a light-emitting stack for emitting light and a substrate structure including: a first substrate disposed under the light-emitting stack and having a first surface facing the light-emitting stack; and a second substrate disposed under the light-emitting stack and having a second surface facing the light-emitting stack; and a reflective layer formed between the first substrate and the second substrate and having an inclined angle not perpendicular to the first surface.

Abstract translation: 发光元件包括用于发光的发光叠层和基板结构，包括：第一基板，设置在所述发光堆叠下方，并具有面向所述发光叠层的第一表面; 以及第二基板，其设置在所述发光堆叠下方并且具有面向所述发光叠层的第二表面; 以及形成在第一基板和第二基板之间并具有不垂直于第一表面的倾斜角度的反射层。

公开(公告)号：US07880182B2

公开(公告)日：2011-02-01

申请号：US12482419

申请日：2009-06-10

Applicant: Chiu-Lin Yao ,  Min-Hsun Hsieh ,  Wen-Huang Liu

Inventor： Chiu-Lin Yao ,  Min-Hsun Hsieh ,  Wen-Huang Liu

IPC: H01L29/88

CPC classification number: H01L25/0753 ,  F21K9/00 ,  H01L27/153 ,  H01L2224/24 ,  H01L2224/24137 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting element array includes a conductive substrate; an adhesive layer disposed on the conductive substrate; a first epitaxial light-emitting stack layers disposed on the adhesive layer, the first epitaxial light-emitting stack layers including a first p-contact and an first n-contact, wherein the first p-contact and the first n-contact are disposed on the same side of the first epitaxial light-emitting stack layer; and a second epitaxial light-emitting stack layers disposed on the adhesive layer including a second p-contact and an second n-contact, wherein the second p-contact and the second n-contact are disposed on the opposite side of the epitaxial light-emitting stack layer; wherein the first epitaxial light-emitting stack layers and the second epitaxial light-emitting stack layers are electrically connected in anti-parallel.

Abstract translation: 发光元件阵列包括导电基板; 设置在导电基板上的粘合剂层; 布置在所述粘合剂层上的第一外延发光堆叠层，所述第一外延发光堆叠层包括第一p型接触和第一n型接触，其中所述第一p型接触和所述第一n型接触设置在 第一外延发光堆叠层的同一侧; 以及设置在所述粘合剂层上的第二外延发光叠层，包括第二p型接触和第二n型接触，其中所述第二p型接触和所述第二n型接触设置在所述外延发光层的相对侧上， 发射堆叠层; 其中所述第一外延发光堆叠层和所述第二外延发光堆叠层以反并联方式电连接。

公开(公告)号：US20100244077A1

公开(公告)日：2010-09-30

申请号：US12751642

申请日：2010-03-31

Applicant: Chiu-Lin YAO

Inventor： Chiu-Lin YAO

IPC: H01L33/00 ,  H01L31/02 ,  H01L31/0232

CPC classification number: H01L33/641 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A photoelectronic element includes a composite substrate including an electrically insulative substrate having a chamber; an intermediate layer; and an electrically conductive substrate; a bonding layer including an electrically conductive region and an electrically insulative region; a first current spreading layer; a first semiconductor stacked layer including a first semiconductor layer, an active layer, and a second semiconductor layer; a current blocking layer; a second current spreading layer; and a first electrode.

Abstract translation: 光电元件包括​​：复合衬底，其包括具有腔室的电绝缘衬底; 中间层 和导电基板; 包括导电区域和电绝缘区域的接合层; 第一电流扩散层; 包括第一半导体层，有源层和第二半导体层的第一半导体层叠层; 电流阻挡层; 第二电流扩散层; 和第一电极。

公开(公告)号：US20100096657A1

公开(公告)日：2010-04-22

申请号：US12646553

申请日：2009-12-23

Applicant: Chen OU ,  Chiu-Lin Yao

Inventor： Chen OU ,  Chiu-Lin Yao

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0091

Abstract: The disclosure provides a light-emitting device comprising a substrate, an intermediate layer formed on the substrate, a first doped semiconductor layer with first conductivity-type formed on the intermediate layer, a second doped semiconductor layer with second conductivity-type formed on the first doped semiconductor layer, an active layer formed between the first doped semiconductor layer and the second doped semiconductor layer, and a patterned surface having a plurality of ordered pattern units; wherein the patterned surface is substantially not parallel to the corresponding region of the surface of the active layer.

Abstract translation: 本发明提供一种发光器件，其包括衬底，形成在衬底上的中间层，在中间层上形成的具有第一导电型的第一掺杂半导体层，在第一衬底上形成的具有第二导电类型的第二掺杂半导体层 形成在所述第一掺杂半导体层和所述第二掺杂半导体层之间的有源层，以及具有多个有序图案单元的图案化表面; 其中所述图案化表面基本上不平行于所述有源层的表面的相应区域。

公开(公告)号：US20090166666A1

公开(公告)日：2009-07-02

申请号：US12314730

申请日：2008-12-16

Applicant: Chiu-Lin Yao ,  Min-Hsun Hsieh ,  Tzer-Perng Chen

Inventor： Chiu-Lin Yao ,  Min-Hsun Hsieh ,  Tzer-Perng Chen

IPC: H01L33/00

CPC classification number: H01L33/382 ,  H01L33/08 ,  H01L33/22 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An exemplary semiconductor device is provided. The semiconductor device includes a semiconductor stacked layer and a conductive structure. The conductive structure is located on the semiconductor stacked layer. The conductive structure includes a bottom portion and a top portion on opposite sides thereof. The bottom portion is in contact with the semiconductor stacked layer. A ratio of a top width of the top portion to a bottom width of the bottom portion is less than 0.7. The conductive structure can be a conductive dot structure or a conductive line structure.

Abstract translation: 提供了示例性的半导体器件。 半导体器件包括半导体堆叠层和导电结构。 导电结构位于半导体堆叠层上。 导电结构包括底部和在其相对侧上的顶部。 底部与半导体堆叠层接触。 顶部的顶部宽度与底部的底部宽度之比小于0.7。 导电结构可以是导电点结构或导线结构。

公开(公告)号：US20090045435A1

公开(公告)日：2009-02-19

申请号：US12222548

申请日：2008-08-12

Applicant: Chiu-Lin Yao ,  Ta-Cheng Hsu ,  Min-Hsun Hsieh

Inventor： Chiu-Lin Yao ,  Ta-Cheng Hsu ,  Min-Hsun Hsieh

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/22 ,  H01L2933/0091

Abstract: A stamp having a nanoscale structure and a manufacturing method thereof are disclosed. The stamp includes a substrate, a buffer layer, and a nanoscale stamp layer. The method comprises forming a buffer layer on the substrate, and forming a stamp layer having a nanoscale structure on the buffer layer.

Abstract translation: 公开了具有纳米级结构的印模及其制造方法。 印模包括基板，缓冲层和纳米尺度印模层。 该方法包括在衬底上形成缓冲层，并在缓冲层上形成具有纳米尺度结构的印模层。

公开(公告)号：US20080308832A1

公开(公告)日：2008-12-18

申请号：US12213129

申请日：2008-06-16

Applicant: Min-Hsun Hsieh ,  Chiu-Lin Yao

Inventor： Min-Hsun Hsieh ,  Chiu-Lin Yao

IPC: H01L33/00

CPC classification number: H01L33/44

Abstract: A light-emitting device comprises a semiconductor light-emitting stack; and an optical field tuning layer formed on the semiconductor light-emitting stack to change beam angles of the light-emitting device.

Abstract translation: 发光装置包括半导体发光叠层; 以及形成在半导体发光叠层上的光场调谐层，以改变发光器件的光束角度。

公开(公告)号：US09099612B2

公开(公告)日：2015-08-04

申请号：US13193970

申请日：2011-07-29

Applicant: Min-Hsun Hsieh ,  Wei-Yu Chen ,  Li-Ming Chang ,  Chien-Yuan Wang ,  Chiu-Lin Yao

Inventor： Min-Hsun Hsieh ,  Wei-Yu Chen ,  Li-Ming Chang ,  Chien-Yuan Wang ,  Chiu-Lin Yao

IPC: H01L33/38 ,  H01L33/24

CPC classification number: H01L33/382 ,  H01L33/24 ,  H01L33/385 ,  H01L33/387 ,  H01L2933/0016

Abstract: This application provides a semiconductor light-emitting device and the manufacturing method thereof. The semiconductor light-emitting device comprises a semiconductor light-emitting structure and a thinned substrate. The semiconductor light-emitting structure comprises a plurality of semiconductor layers and a plurality of first channels, wherein a plurality of first channels has a predetermined depth that penetrating at least two layers of the plurality of semiconductor layers.

Abstract translation: 本申请提供了一种半导体发光器件及其制造方法。 半导体发光器件包括半导体发光结构和薄化衬底。 半导体发光结构包括多个半导体层和多个第一通道，其中多个第一通道具有穿透多个半导体层的至少两层的预定深度。

公开(公告)号：US08890178B2

公开(公告)日：2014-11-18

申请号：US13231250

申请日：2011-09-13

Applicant: Chien-Fu Huang ,  Chao-Hsing Chen ,  Chiu-Lin Yao ,  Hsin-Mao Liu ,  Chien-Kai Chung

Inventor： Chien-Fu Huang ,  Chao-Hsing Chen ,  Chiu-Lin Yao ,  Hsin-Mao Liu ,  Chien-Kai Chung

IPC: H01L29/18 ,  H01L27/15 ,  H01L33/22 ,  H01L33/20 ,  H01L33/62

CPC classification number: H01L27/153 ,  H01L33/20 ,  H01L33/22 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting element includes a monolithic understructure including a first surface and a second surface different from the first surface; a plurality of light-emitting structure units disposed on the second surface; and a trench formed on a portion of the first surface and between the plurality of light-emitting structure units, wherein a height of the portion of the first surface is greater than a height of the second surface measured from a bottom of the monolithic understructure, and the portion of the first surface is exposed by the trench.

Abstract translation: 发光元件包括：整体式下结构，包括第一表面和与第一表面不同的第二表面; 设置在所述第二表面上的多个发光结构单元; 以及形成在所述第一表面的一部分上并且在所述多个发光结构单元之间的沟槽，其中所述第一表面的所述部分的高度大于从所述整体式下部结构的底部测量的所述第二表面的高度， 并且第一表面的部分被沟槽暴露。