公开(公告)号：US08187979B2

公开(公告)日：2012-05-29

申请号：US12646407

申请日：2009-12-23

申请人： Deepak A. Ramappa ,  Ludovic Godet

发明人： Deepak A. Ramappa ,  Ludovic Godet

IPC分类号： H01L31/18

CPC分类号： H01L31/068 ,  H01J37/32366 ,  H01J37/32422 ,  H01J37/32623 ,  H01L21/3065 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods to texture or fabricate workpieces are disclosed. The workpiece may be, for example, a solar cell. This texturing may involve etching or localized sputtering using a plasma where a shape of a boundary between the plasma and the plasma sheath is modified with an insulating modifier. The workpiece may be rotated in between etching or sputtering steps to form pyramids. Regions of the workpiece also may be etched or sputtered with ions formed from a plasma adjusted by an insulating modifier and doped. A metal layer may be formed on these doped regions.

摘要翻译： 公开了纹理或制造工件的方法。 工件可以是例如太阳能电池。 这种纹理化可能包括使用等离子体进行蚀刻或局部溅射，其中等离子体和等离子体护套之间的边界的形状用绝缘改性剂改性。 可以在蚀刻或溅射步骤之间旋转工件以形成金字塔。 工件的区域也可以用由通过绝缘改性剂调节的等离子体形成的离子进行蚀刻或溅射并掺杂。 可以在这些掺杂区域上形成金属层。

公开(公告)号：US08183546B2

公开(公告)日：2012-05-22

申请号：US12712816

申请日：2010-02-25

申请人： Deepak A. Ramappa

发明人： Deepak A. Ramappa

IPC分类号： G21K5/04

CPC分类号： H01J37/3171 ,  H01J37/3002 ,  H01J37/32412 ,  H01J37/32422 ,  H01J2237/04 ,  H01J2237/2482 ,  H01J2237/3171

摘要： Ions are generated and directed toward a workpiece. A laser source generates a laser that is projected above the workpiece in a line. As the laser is generated, a fraction of the ions are blocked by the laser. This may enable selective implantation or modification of the workpiece. In one particular embodiment, the lasers are generated while ions are directed toward the workpiece and then stopped. Ions are still directed toward the workpiece after the lasers are stopped.

摘要翻译： 产生的离子产生并指向工件。 激光源产生在工件上方一条线上投射的激光。 当激光产生时，一部分离子被激光器阻挡。 这可以使得能够选择性地植入或修改工件。 在一个具体实施例中，激光器被产生，而离子被指向工件然后停止。 在激光停止后，离子仍然朝向工件。

公开(公告)号：US20110259408A1

公开(公告)日：2011-10-27

申请号：US13091289

申请日：2011-04-21

申请人： Deepak A. Ramappa ,  Ludovic Godet

发明人： Deepak A. Ramappa ,  Ludovic Godet

IPC分类号： H01L31/06 ,  H01L31/0224 ,  H01L31/0376

CPC分类号： H01L21/00 ,  C23C14/042 ,  C23C14/48 ,  C23C16/02 ,  C23C16/04 ,  C23C16/50 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of patterning a substrate includes providing a focusing plate adjacent to a plasma chamber containing a plasma, the focusing plate configured to extract ions from the plasma through at least one aperture that provides focused ions towards the substrate. The method further includes directing first ions through the at least one aperture to one or more first regions of the substrate so as to condense first gaseous species provided in ambient of the substrate on the one or more first regions of the substrate.

摘要翻译： 图案化衬底的方法包括提供邻近包含等离子体的等离子体室的聚焦板，该聚焦板被配置为通过至少一个孔向等离子体提取离子，所述孔向衬底提供聚焦离子。 该方法还包括将第一离子引导通过至少一个孔到基底的一个或多个第一区域，以便在衬底的一个或多个第一区域上冷凝在衬底环境中提供的第一气态物质。

公开(公告)号：US20110204264A1

公开(公告)日：2011-08-25

申请号：US12712816

申请日：2010-02-25

申请人： Deepak A. RAMAPPA

发明人： Deepak A. RAMAPPA

IPC分类号： H01J37/30 ,  H01J37/02

CPC分类号： H01J37/3171 ,  H01J37/3002 ,  H01J37/32412 ,  H01J37/32422 ,  H01J2237/04 ,  H01J2237/2482 ,  H01J2237/3171

摘要： Ions are generated and directed toward a workpiece. A laser source generates a laser that is projected above the workpiece in a line. As the laser is generated, a fraction of the ions are blocked by the laser. This may enable selective implantation or modification of the workpiece. In one particular embodiment, the lasers are generated while ions are directed toward the workpiece and then stopped. Ions are still directed toward the workpiece after the lasers are stopped.

摘要翻译： 产生的离子产生并指向工件。 激光源产生在工件上方一条线上投射的激光。 当激光产生时，一部分离子被激光器阻挡。 这可以实现工件的选择性植入或修改。 在一个具体实施例中，激光器被产生，而离子被指向工件然后停止。 在激光停止后，离子仍然朝向工件。

公开(公告)号：US20110127885A1

公开(公告)日：2011-06-02

申请号：US13016525

申请日：2011-01-28

申请人： Deepak A. RAMAPPA

发明人： Deepak A. RAMAPPA

IPC分类号： G10K9/122

CPC分类号： H01L21/76254 ,  H01L21/26506 ,  H01L21/2658

摘要： An improved process of substrate cleaving and a device to perform the cleaving are disclosed. In the traditional cleaving process, a layer of microbubbles is created within a substrate through the implantation of ions of a gaseous species, such as hydrogen or helium. The size and spatial distribution of these microbubbles is enhanced through the use of ultrasound energy. The ultrasound energy causes smaller microbubbles to join together and also reduces the straggle. An ultrasonic transducer is acoustically linked with the substrate to facilitate these effects. In some embodiments, the ultrasonic transducer is in communication with the platen, such that ultrasound energy can be applied during ion implantation and/or immediately thereafter. In other embodiments, the ultrasonic energy is applied to the substrate during a subsequent process, such as an anneal.

摘要翻译： 公开了一种改进的基板切割工艺和一种执行切割的装置。 在传统的切割过程中，通过注入气态物质如氢或氦的离子，在衬底内产生一层微泡。 这些微泡的尺寸和空间分布通过使用超声能量来增强。 超声波能量会导致较小的微泡连接在一起，并且还可以减少颤动。 超声换能器与衬底声学连接以促进这些效果。 在一些实施例中，超声波换能器与压板连通，使得在离子注入期间和/或之后立即施加超声波能量。 在其他实施例中，在后续工艺（例如退火）中将超声能量施加到衬底。

公开(公告)号：US20110097840A1

公开(公告)日：2011-04-28

申请号：US12911029

申请日：2010-10-25

申请人： Deepak A. Ramappa

发明人： Deepak A. Ramappa

IPC分类号： H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of improving the anti-reflection properties of one or more dielectric layers and reducing surface recombination of generated carriers of a solar cell are disclosed. In some embodiments, dopants are introduced into the dielectric layers to improve their anti-reflection properties. In other embodiments, species are introduced into the dielectric layers to create electrical fields which repel the minority carriers away from the surface and toward the contacts. In another embodiment, mobiles species are introduced to the anti-reflective coating, which cause carrier to be repelled from the surface of the solar cell. By creating a barrier at the surface of the solar cell, undesired recombination at the surface may be reduced.

摘要翻译： 公开了改善一个或多个电介质层的抗反射特性并减少太阳能电池的所生成的载流子的表面复合的方法。 在一些实施方案中，将掺杂剂引入电介质层以改善其抗反射性能。 在其它实施例中，物质被引入到电介质层中以形成电场，其排斥少数载流子远离表面并朝向接触。 在另一个实施方案中，将移动体物质引入到抗反射涂层中，这导致载体从太阳能电池的表面排斥。 通过在太阳能电池的表面产生阻挡层，可以减少表面处的不期望的复合。

公开(公告)号：US07902091B2

公开(公告)日：2011-03-08

申请号：US12538903

申请日：2009-08-11

申请人： Deepak A. Ramappa

发明人： Deepak A. Ramappa

IPC分类号： H01L21/00

CPC分类号： H01L21/76254 ,  H01L21/26506 ,  H01L21/2658

摘要： An improved process of substrate cleaving and a device to perform the cleaving are disclosed. In the traditional cleaving process, a layer of microbubbles is created within a substrate through the implantation of ions of a gaseous species, such as hydrogen or helium. The size and spatial distribution of these microbubbles is enhanced through the use of ultrasound energy. The ultrasound energy causes smaller microbubbles to join together and also reduces the straggle. An ultrasonic transducer is acoustically linked with the substrate to facilitate these effects. In some embodiments, the ultrasonic transducer is in communication with the platen, such that ultrasound energy can be applied during ion implantation and/or immediately thereafter. In other embodiments, the ultrasonic energy is applied to the substrate during a subsequent process, such as an anneal.

摘要翻译： 公开了一种改进的基板切割工艺和一种执行切割的装置。 在传统的切割过程中，通过注入气态物质如氢或氦的离子，在衬底内产生一层微泡。 这些微泡的尺寸和空间分布通过使用超声能量来增强。 超声波能量会导致较小的微泡连接在一起，并且还可以减少颤动。 超声换能器与衬底声学连接以促进这些效果。 在一些实施例中，超声波换能器与压板连通，使得在离子注入期间和/或之后立即施加超声波能量。 在其他实施例中，在后续工艺（例如退火）中将超声能量施加到衬底。

公开(公告)号：US07772867B2

公开(公告)日：2010-08-10

申请号：US12037687

申请日：2008-02-26

申请人： Richard L. Guldi ,  Toan Tran ,  Deepak A. Ramappa

发明人： Richard L. Guldi ,  Toan Tran ,  Deepak A. Ramappa

IPC分类号： G01R31/02

CPC分类号： H01L22/14 ,  G01R31/2884 ,  G01R31/307 ,  H01L22/20 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for detecting defects during semiconductor device processing can include providing a substrate having a semiconductor comprising layer with electrically isolated application and test circuits are formed thereon, directing an electron current inducing beam to the test circuit; measuring a current between the first and the second contact pads in the test circuit; determining an electron beam induced current (EBIC); and identifying one or more defect locations in the test circuit based on the EBIC and a location of the electron beam corresponding to the EBIC. A test circuit can include a plurality of semiconductor devices connected in parallel, a first contact pad coupled to a first terminal of the semiconductor devices, and at least a second contact pad coupled to a substrate terminal associated with the semiconductor devices.

摘要翻译： 用于在半导体器件处理期间检测缺陷的方法可以包括提供具有电隔离应用的具有半导体层的衬底，并且在其上形成测试电路，将电子电流感应束引导到测试电路; 测量测试电路中的第一和第二接触焊盘之间的电流; 确定电子束感应电流（EBIC）; 以及基于EBIC和对应于EBIC的电子束的位置来识别测试电路中的一个或多个缺陷位置。 测试电路可以包括并联连接的多个半导体器件，耦合到半导体器件的第一端子的第一接触焊盘以及耦合到与半导体器件相关联的衬底端子的至少第二接触焊盘。

公开(公告)号：US07745238B2

公开(公告)日：2010-06-29

申请号：US12037531

申请日：2008-02-26

申请人： Deepak A. Ramappa ,  Rosa A. Orozco-Teran ,  Laura Matz

发明人： Deepak A. Ramappa ,  Rosa A. Orozco-Teran ,  Laura Matz

IPC分类号： G01R31/26 ,  H01L21/66

CPC分类号： H01L22/10

摘要： A method of measuring temperature across wafers during semiconductor processing includes the step of providing a correlation between a peak wafer temperature during a processing step and a change in wafer surface charge or surface potential following the processing step. A first wafer to be characterized for its peak temperature spatial distribution during the processing step is processed through the processing step. The wafer surface charge or surface potential at a plurality of locations on the first wafer are measured following the processing step. A peak temperature spatial distribution for the first wafer is then determined based on the correlation and the wafer surface charge or surface potential measured in the measuring step.

摘要翻译： 在半导体处理期间测量晶片温度的方法包括在处理步骤之间提供峰值晶片温度与处理步骤之后的晶片表面电荷或表面电位的变化之间的相关性的步骤。 通过处理步骤处理在处理步骤期间用于其峰值温度空间分布的特征的第一晶片。 在处理步骤之后测量在第一晶片上的多个位置处的晶片表面电荷或表面电位。 然后基于在测量步骤中测量的相关性和晶片表面电荷或表面电位来确定第一晶片的峰值温度空间分布。

公开(公告)号：US20090121353A1

公开(公告)日：2009-05-14

申请号：US11939040

申请日：2007-11-13

申请人： Deepak A. Ramappa ,  Eden M. Zielinski

发明人： Deepak A. Ramappa ,  Eden M. Zielinski

IPC分类号： H01L21/768 ,  H01L23/52

CPC分类号： H01L23/522 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： In accordance with the invention, there are methods of making semiconductor devices. The method can include forming a hard mask layer over a dielectric layer, forming a via through the hard mask layer and the dielectric layer, and depositing an anti-reflective coating in the via and over the hard mask layer. The method can also include etching a trench through the hard mask layer, etching a dummy fill pattern in the hard mask layer to a desired thickness, and etching the trench through the dielectric layer and the dummy fill through the hard mask layer and in the dielectric layer. The method can further include depositing copper in the via and in the trench and removing excess copper using chemical mechanical polishing, wherein the dummy fill in the dielectric layer is of desired reduced depth.

摘要翻译： 根据本发明，存在制造半导体器件的方法。 该方法可以包括在电介质层上形成硬掩模层，通过硬掩模层和介电层形成通孔，以及在通孔和硬掩模层上沉积抗反射涂层。 该方法还可以包括通过硬掩模层蚀刻沟槽，将硬掩模层中的虚拟填充图案蚀刻到期望的厚度，以及通过介电层蚀刻沟槽，并通过硬掩模层和电介质蚀刻沟槽 层。 该方法可以进一步包括在通孔和沟槽中沉积铜，并使用化学机械抛光去除多余的铜，其中介电层中的虚拟填充具有期望的减小的深度。