公开(公告)号：US07282446B2

公开(公告)日：2007-10-16

申请号：US10819143

申请日：2004-04-07

申请人： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

发明人： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

IPC分类号： H01L21/302

CPC分类号： B82B3/00 ,  B29C59/022 ,  B29C59/026 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/32139

摘要： A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.

摘要翻译： 提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。 纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。 阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

公开(公告)号：US07256406B2

公开(公告)日：2007-08-14

申请号：US10962467

申请日：2004-10-13

申请人： In-kyeong Yoo ,  Chang-wook Moon ,  Chang-hoon Choi

发明人： In-kyeong Yoo ,  Chang-wook Moon ,  Chang-hoon Choi

IPC分类号： G21K5/10

CPC分类号： H01J37/073 ,  H01J2237/31779

摘要： An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

摘要翻译： 用于电子束投影光刻系统的发射器包括：感光体基板，形成于感光体基板前表面的绝缘层，形成在绝缘层上的栅极电极层，以及形成在绝缘层的背面上的基极层 感光体基板并由透明导电材料形成。 在发射极的工作中，在基极和栅极电极层之间施加电压，光被投射到光电导体基底的一部分上，以将感光体基底的一部分转换为导体，使电子仅从部分 投射光的部分。 由于发射体可以部分地发射电子，所以可以实现对象电子抗蚀剂的部分校正，图案化或修复。

公开(公告)号：US07170843B2

公开(公告)日：2007-01-30

申请号：US10610540

申请日：2003-07-02

申请人： Seung-bum Hong ,  In-kyeong Yoo ,  Ju-hwan Jung

发明人： Seung-bum Hong ,  In-kyeong Yoo ,  Ju-hwan Jung

IPC分类号： H01J3/14

CPC分类号： B82Y10/00 ,  G11B9/08 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1472 ,  G11B9/149 ,  G11B11/08 ,  G11B13/06

摘要： A high-density data storage medium, a method of manufacturing the data storage medium, a high-density data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus are provided. The data storage medium includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer. The data storage apparatus includes a stage supporting a data storage medium, which includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer, a scanner driving the stage, a probe placed over the data storage medium and including a tip forming an electric field with the data storage medium and a cantilever supporting the tip placed at its one end so as to maintain a predetermined distance between the data storage medium and the tip, a circuit unit applying a driving signal, a data write signal, and a data erase signal to the scanner and the probe and detecting a data read signal, and a light source irradiating light on the data storage medium.

摘要翻译： 提供高密度数据存储介质，数据存储介质的制造方法，高密度数据存储装置以及通过使用数据存储装置从数据存储介质写数据和读取和擦除数据的方法 。 数据存储介质包括下电极，沉积在下电极上的绝缘层，沉积在绝缘层上的光电子发射层，并且具有多个突起，由于突起和光子之间的碰撞而从其中发射光电子;以及电介质 层沉积在光电子发射层上并存储从光电子发射层发射的光电子。 该数据存储装置包括支持数据存储介质的载台，该载台包括下电极，沉积在下电极上的绝缘层，沉积在绝缘层上的光电子发射层，并且具有多个突起，由于 突起和光子之间的碰撞，以及沉积在光电子发射层上并存储从光电子发射层发射的光电子的介电层，驱动载物台的扫描仪，放置在数据存储介质上的探针，并且包括形成电场的尖端 数据存储介质和悬臂支撑设置在其一端的尖端，以便保持数据存储介质和尖端之间的预定距离，施加驱动信号的电路单元，数据写入信号和数据擦除信号 扫描仪和探头，并检测数据读取信号，以及光源照射数据 存储介质。

公开(公告)号：US20060197082A1

公开(公告)日：2006-09-07

申请号：US11363235

申请日：2006-02-28

申请人： Choong-rae Cho ,  In-kyeong Yoo ,  Sung-il Cho

发明人： Choong-rae Cho ,  In-kyeong Yoo ,  Sung-il Cho

IPC分类号： H01L29/18

CPC分类号： H01L29/7869 ,  H01L29/78681 ,  H01L49/003

摘要： A transistor using a physical property-changing layer, a method of operating the transistor, and a method of manufacturing the transistor are provided. The transistor may include an insulation layer formed on a substrate, the first and second conductive layer patterns, the physical property-changing layer, a dielectric layer, for example, a high dielectric layer, and a gate electrode. The first and second conductive layer patterns may be spaced apart from each other on the insulation layer. The physical property-changing layer may be formed on a portion of the insulation layer between the first and second conductive layer patterns. The dielectric layer may be stacked on the physical property-changing layer and the gate electrode may be formed on the high dielectric layer.

摘要翻译： 提供了使用物理性质改变层的晶体管，晶体管的操作方法和晶体管的制造方法。 晶体管可以包括形成在衬底上的绝缘层，第一和第二导电层图案，物理性质改变层，介电层，例如高电介质层和栅电极。 第一和第二导电层图案可以在绝缘层上彼此间隔开。 物理变化层可以形成在第一和第二导电层图案之间的绝缘层的一部分上。 电介质层可以堆叠在物理变化层上，并且栅电极可以形成在高电介质层上。

公开(公告)号：US07095036B2

公开(公告)日：2006-08-22

申请号：US10795979

申请日：2004-03-10

申请人： Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon

发明人： Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon

IPC分类号： H01J37/08

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/06333

摘要： An electron beam lithography apparatus for providing one-to-one or x-to-one projection of a pattern includes a pyroelectric emitter, which is disposed a predetermined distance apart from a substrate holder, the pyroelectric emitter including a pyroelectric plate having a dielectric plate on a surface thereof and a patterned semiconductor thin film on the dielectric plate facing the substrate holder, a heating source for heating the pyroelectric emitter, and either a pair of magnets disposed beyond the pyroelectric emitter and the substrate holder, respectively, or a deflection unit disposed between the pyroelectric emitter and the substrate holder, to control paths of electrons emitted by the pyroelectric emitter. In operation, when the pyroelectric emitter is heated in a vacuum, electrons are emitted from portions of the pyroelectric plate that are not covered by the patterned semiconductor thin film.

摘要翻译： 一种用于提供图案的一对一或一对一投影的电子束光刻设备包括一个与衬底保持架隔开预定距离设置的热电发射器，该热电发射器包括一个具有电介质板的热电板 在其表面上和面对衬底保持器的电介质板上的图案化半导体薄膜，分别用于加热热电发射体的加热源和设置在热电发射器和衬底保持器之外的一对磁体或偏转单元 设置在热电发射器和衬底保持器之间，以控制由热电发射器发射的电子的路径。 在操作中，当热电发射体在真空中被加热时，从热电板的未被图案化半导体薄膜覆盖的部分发射电子。

公开(公告)号：US20060113614A1

公开(公告)日：2006-06-01

申请号：US11267825

申请日：2005-11-07

申请人： In-Kyeong Yoo ,  Myoung-Jae Lee ,  Sun-Ae Seo ,  David Seo

发明人： In-Kyeong Yoo ,  Myoung-Jae Lee ,  Sun-Ae Seo ,  David Seo

IPC分类号： H01L29/94

CPC分类号： H01L27/24 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/75

摘要： A nonvolatile memory device including one resistor and one transistor. The resistor may correspond to a resistance layer electrically connected to a first impurity region and a second impurity region of the transistor.

摘要翻译： 一种非易失性存储器件，包括一个电阻器和一个晶体管。 电阻器可以对应于电连接到晶体管的第一杂质区域和第二杂质区域的电阻层。

公开(公告)号：US07015500B2

公开(公告)日：2006-03-21

申请号：US10361024

申请日：2003-02-10

申请人： Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

发明人： Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

IPC分类号： H01B7/08 ,  H01L35/24

CPC分类号： B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  Y10S977/943

摘要： A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.

摘要翻译： 一种由碳纳米管存储器件及其形成方法形成的快速，可靠，高度集成的存储器件，其中碳纳米管存储器件包括衬底，源电极，漏电极，具有高电的碳纳米管和 热导率，具有优异电荷存储能力的存储单元和栅电极。 源电极和漏电极在它们之间以预定间隔布置在衬底上并经受电压。 碳纳米管将源电极连接到漏电极并用作电荷运动的通道。 存储单元位于碳纳米管之上，并存储来自碳纳米管的电荷。 栅电极形成为与存储单元的上表面接触，并控制从碳纳米管流入存储单元的电荷量。

公开(公告)号：US06999346B2

公开(公告)日：2006-02-14

申请号：US10774456

申请日：2004-02-10

申请人： In-kyeong Yoo ,  Byong-man Kim

发明人： In-kyeong Yoo ,  Byong-man Kim

IPC分类号： G11C13/07

CPC分类号： B82Y10/00 ,  G11C2216/08 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/7881

摘要： A memory device including a single transistor having functions of RAM and ROM and methods for operating and manufacturing the same are provided. The memory device includes a single transistor formed on a substrate. The transistor may be a memory transistor having a gate with a nonvolatile memory element, or the nonvolatile memory element is provided between the transistor and the substrate.

公开(公告)号：US20050145835A1

公开(公告)日：2005-07-07

申请号：US11057469

申请日：2005-02-15

申请人： In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

发明人： In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

IPC分类号： G03F7/20 ,  H01J1/312 ,  H01J9/02 ,  H01J37/06 ,  H01J37/073 ,  H01J37/305 ,  H01L21/027 ,  H01L29/06 ,  H01L21/00

CPC分类号： B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J9/027 ,  H01J2237/31774 ,  H01J2237/31783

摘要： An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.

公开(公告)号：US06885138B1

公开(公告)日：2005-04-26

申请号：US09665122

申请日：2000-09-20

申请人： In-Kyeong Yoo

发明人： In-Kyeong Yoo

IPC分类号： H01J1/30 ,  H01J1/312 ,  H01J37/04 ,  H01J37/06 ,  H01J37/073 ,  H01L21/027 ,  H01J1/14 ,  H01J19/06

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J1/312 ,  H01J37/073 ,  H01J37/3174 ,  H01J2201/306

摘要： A ferroelectric multi-layered emitter used in a semiconductor lithography process includes a lower electrode, a ferroelectric layer, having a top surface with two end portions, which overlies the lower electrode, an insertion electrode formed on a region excluding the two end portions of the top surface of the ferroelectric layer, a dielectric layer, having sides and a top surface with two end portions, which has a predetermined pattern and is formed along the top surface of the ferroelectric layer and the insertion electrode, and a dummy upper electrode formed on a side of the dielectric layer opposite the ferroelectric layer. The ferroelectric emitter of the present invention guarantees uniform electron emission from wide and narrow gaps of a mask layer and in an isolated pattern such as a doughnut shape for ferroelectric switching emission lithography.

摘要翻译： 在半导体光刻工艺中使用的铁电多层发射体包括：下电极，铁电层，具有两个端部的顶表面，覆盖在下电极上;插入电极，形成在除 铁电层的上表面，介电层，具有侧面和具有两个端部的顶表面，其具有预定图案并沿着铁电层和插入电极的顶表面形成，并且虚设上电极形成在 电介质层的与铁电层相对的一侧。 本发明的铁电发射体保证了掩模层的宽和窄间隙的均匀的电子发射以及诸如用于铁电开关发射光刻的环形形状的隔离图案。