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43 条记录 (耗时 0.016 秒)

    Methods of forming integrated circuit devices with metal-insulator-metal capacitors
    33.
    发明申请
    Methods of forming integrated circuit devices with metal-insulator-metal capacitors 审中-公开
    用金属 - 绝缘体 - 金属电容器形成集成电路器件的方法

    公开(公告)号：US20060060907A1

    公开(公告)日：2006-03-23

    申请号：US11273505

    申请日：2005-11-14

    申请人： Ki-Chul Kim ,  Young-Sun Kim ,  Gab-Jin Nam ,  Sung-Tae Kim ,  Thomas Kwon ,  Han-Mei Choi ,  Jae-Soon Lim

    发明人： Ki-Chul Kim ,  Young-Sun Kim ,  Gab-Jin Nam ,  Sung-Tae Kim ,  Thomas Kwon ,  Han-Mei Choi ,  Jae-Soon Lim

    IPC分类号： H01L27/108

    CPC分类号： H01L21/32051 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/10894 ,  H01L27/10897 ,  H01L28/91

    摘要： A conductive contact plug extends through an opening in the dielectric layer to contact the substrate and includes a widened pad portion extending onto the dielectric layer adjacent the opening. An ohmic pattern is disposed on the pad portion of the plug, and a barrier pattern is disposed on the ohmic pattern. A concave first capacitor electrode is disposed on the barrier pattern and defines a cavity opening away from the substrate. A capacitor dielectric layer conforms to a surface of the first capacitor electrode and a second capacitor electrode is disposed on the capacitor dielectric layer opposite the first capacitor electrode. Sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug may be substantially coplanar, and the device may further include an etch stopper layer conforming to at least sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug. Related fabrication methods are described.

    摘要翻译： 导电接触插塞延伸穿过电介质层中的开口以接触衬底并且包括延伸到邻近开口的电介质层上的加宽焊盘部分。 欧姆图案设置在插头的焊盘部分上，并且阻挡图案设置在欧姆图案上。 凹陷的第一电容器电极设置在阻挡图案上并且限定了远离基板的空腔。 电容器电介质层符合第一电容器电极的表面，并且第二电容器电极设置在与第一电容器电极相对的电容器电介质层上。 欧姆图案的侧壁，接触塞的阻挡图案和焊盘部分可以是基本上共面的，并且该器件还可以包括符合至少欧姆图案的侧壁，阻挡图案和焊盘部分的蚀刻停止层 接触插头。 描述相关的制造方法。

    Trench capacitors with insulating layer collars in undercut regions and method of fabricating the same
    34.
    发明申请
    Trench capacitors with insulating layer collars in undercut regions and method of fabricating the same 失效
    在底切区域具有绝缘层套的沟槽电容器及其制造方法

    公开(公告)号：US20050212026A1

    公开(公告)日：2005-09-29

    申请号：US11037626

    申请日：2005-01-18

    申请人： Suk-jin Chung ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim ,  Jae-soon Lim ,  Young-geun Park

    发明人： Suk-jin Chung ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim ,  Jae-soon Lim ,  Young-geun Park

    IPC分类号： H01L27/108 ,  H01L21/334 ,  H01L21/82 ,  H01L21/8242 ,  H01L29/94

    CPC分类号： H01L27/10867 ,  H01L27/10829 ,  H01L27/1087 ,  H01L29/66181 ,  H01L29/945

    摘要： Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench. A storage electrode is formed in the second trench on the dielectric layer.

    摘要翻译： 提供了在底切区域中具有绝缘层套环的沟槽电容器和制造这种沟槽电容器的方法。 制造沟槽电容器的一些方法包括在衬底上形成第一层。 在与衬底相对的第一层上形成第二层。 形成在第一和第二层的顶部上具有开口的掩模。 通过从掩模中的开口去除第一层和第二层的一部分来形成第一沟槽。 除去第二层下面的第一层的一部分，以在第二层下形成底切区域。 在第二层下方的底切区域中形成绝缘层套环。 形成第二沟槽，其通过从掩模中的开口去除衬底的一部分而从第一沟槽延伸。 掩埋板沿着第二沟槽形成在衬底中。 介电层形成在第二沟槽的内壁和底部上。 在电介质层上的第二沟槽中形成存储电极。

    Method of forming thin film using atomic layer deposition method
    35.
    发明授权
    Method of forming thin film using atomic layer deposition method 有权
    使用原子层沉积法形成薄膜的方法

    公开(公告)号：US06576053B1

    公开(公告)日：2003-06-10

    申请号：US09679559

    申请日：2000-10-06

    申请人： Yeong-kwan Kim ,  Young-wook Park ,  Jae-soon Lim ,  Sung-je Choi ,  Sang-in Lee

    发明人： Yeong-kwan Kim ,  Young-wook Park ,  Jae-soon Lim ,  Sung-je Choi ,  Sang-in Lee

    IPC分类号： C30B2504

    CPC分类号： H01L21/31691 ,  C30B25/02 ,  C30B29/20 ,  H01L21/316

    摘要： In a method of forming a thin film using an atomic layer deposition (ALD) method, a thin film is formed on a substrate in cycles. Each cycle includes injecting a first reactant including an atom that forms the thin film and a ligand into a reaction chamber that includes the substrate, purging the first reactant, injecting a second reactant into the reaction chamber, and purging the second reactant. The thin film is formed by a chemical reaction between the atom that forms the thin film and a second reactant whose binding energy with respect to the atom that forms the thin film is larger than the binding energy of the ligand with respect to the atom that forms the thin film and the generation of by-products is prevented. The generation of a hydroxide by-product in the thin film is suppressed by using a material that does not include a hydroxide as the second reactant, purging the second reactant, and reacting the second reactant with a third reactant that includes hydroxide. After purging the second reactant, the third reactant for removing impurities and improving the stoichiometry of the thin film is injected and purged. In this way, it is possible to obtain a thin film that does not include impurities and whose stoichiometry is excellent.

    摘要翻译： 在使用原子层沉积（ALD）法形成薄膜的方法中，在基板上循环形成薄膜。 每个循环包括将包括形成薄膜的原子和配体的第一反应物注入到包括基板的反应室中，清洗第一反应物，将第二反应物注入反应室，以及清除第二反应物。 薄膜由形成薄膜的原子与第二反应物之间的化学反应形成，第二反应物的结合能相对于形成薄膜的原子的结合能大于配体相对于形成的原子的结合能 防止了薄膜和副产物的产生。 通过使用不包含氢氧化物作为第二反应物的材料，吹扫第二反应物，并使第二反应物与包含氢氧化物的第三反应物反应，可以抑制薄膜中氢氧化物副产物的产生。 在清洗第二反应物之后，注入和清除用于除去杂质的第三反应物和改善薄膜的化学计量。 以这种方式，可以获得不含杂质的化学计量优异的薄膜。

    Multi-layer film for a thin film structure and a capacitor using the same
    36.
    发明授权
    Multi-layer film for a thin film structure and a capacitor using the same 有权
    用于薄膜结构的多层膜和使用其的电容器

    公开(公告)号：US06570253B1

    公开(公告)日：2003-05-27

    申请号：US09686623

    申请日：2000-10-12

    申请人： Jae-soon Lim ,  Yeong-kwan Kim ,  Heung-soo Park ,  Sang-in Lee

    发明人： Jae-soon Lim ,  Yeong-kwan Kim ,  Heung-soo Park ,  Sang-in Lee

    IPC分类号： H01G904

    CPC分类号： H01L28/40 ,  H01L21/3142 ,  H01L21/31604 ,  H01L21/31616

    摘要： A multi-layer film for a thin film structure, a capacitor using the multi-layer film and methods for fabricating the multi-layer film and the capacitor, the multi-layer film including a composition transition layer between a lower material layer and an upper material layer respectively formed of different elements whose interaction parameters are different from each other, the composition transition layer containing both elements of the lower and upper material layers, the concentration of the composition transition layer gradually varying from the portion of the composition transition layer contacting with the lower material layer to the portion of the composition transition layer contacting with the upper material layer such that the concentration of the element of the upper material layer is relatively large in its portion adjacent to the upper material layer, each of the lower and upper material layers being formed of an oxide or nitride material of aluminum, silicon, zirconium, cerium, titanium, yttrium, tantalum or niobium.

    摘要翻译： 用于薄膜结构的多层膜，使用该多层膜的电容器以及制造多层膜和电容器的方法，所述多层膜包括在下层材料层和上层之间的组成过渡层 分别由相互作用参数彼此不同的不同元素形成的材料层，组成过渡层包含下部和上部材料层的两个元素，组成过渡层的浓度从组成过渡层的部分逐渐变化， 下部材料层到组合物过渡层的与上部材料层接触的部分，使得上部材料层的元素的浓度在与上部材料层相邻的部分中相对较大，每个下部和上部材料 层由铝，硅，锆，铈的氧化物或氮化物材料形成 钛，钛，钇，钽或铌。

    ALD method of forming thin film comprising a metal
    37.
    发明授权
    ALD method of forming thin film comprising a metal 有权
    形成包含金属的薄膜的ALD方法

    公开(公告)号：US08685494B2

    公开(公告)日：2014-04-01

    申请号：US13242037

    申请日：2011-09-23

    申请人： Jae-Soon Lim ,  Jae-Hyoung Choi ,  Youn-Soo Kim ,  Min-Young Park ,  Sang-Yeol Kang

    发明人： Jae-Soon Lim ,  Jae-Hyoung Choi ,  Youn-Soo Kim ,  Min-Young Park ,  Sang-Yeol Kang

    IPC分类号： C23C16/00

    CPC分类号： C23C16/34 ,  C23C16/45525

    摘要： A method of forming a metal thin film can reduce leakage current while improving electric properties by improving step coverage of a device. The method of forming a metal thin film includes supplying a metal precursor including chlorine, purging byproducts produced after the supplying of the metal precursor by injecting a purge gas, supplying a reactant to allow the reactant and the metal precursor to react with each other to form a thin film layer, and purging the byproducts produced after the reaction by injecting a purge gas, wherein before the supplying of the metal precursor, the method further includes supplying a reactant to be adsorbed on a treated product.

    摘要翻译： 形成金属薄膜的方法可以通过提高器件的台阶覆盖率来改善电性能来减少漏电流。 形成金属薄膜的方法包括：供给包含氯的金属前体，通过注入吹扫气体，在供给金属前体之后产生的副产物，供应反应物以允许反应物和金属前体彼此反应形成 薄膜层，并且通过注入吹扫气体来净化反应后产生的副产物，其中在供给金属前体之前，所述方法还包括供给被处理产物上被吸附的反应物。

    Multi-layer film for thin film structure, capacitor using the same and fabrication method thereof
    39.
    发明授权
    Multi-layer film for thin film structure, capacitor using the same and fabrication method thereof 有权

    公开(公告)号：US07052918B2

    公开(公告)日：2006-05-30

    申请号：US10410341

    申请日：2003-04-10

    申请人： Jae-soon Lim ,  Yeong-kwan Kim ,  Heung-soo Park ,  Sang-in Lee

    发明人： Jae-soon Lim ,  Yeong-kwan Kim ,  Heung-soo Park ,  Sang-in Lee

    IPC分类号： H01L21/8242

    CPC分类号： H01L28/40 ,  H01L21/3142 ,  H01L21/31604 ,  H01L21/31616

    摘要： A multi-layer film for a thin film structure, a capacitor using the multi-layer film and methods for fabricating the multi-layer film and the capacitor, the multi-layer film including a composition transition layer between a lower material layer and an upper material layer respectively formed of different elements whose interaction parameters are different from each other, the composition transition layer containing both elements of the lower and upper material layers, the concentration of the composition transition layer gradually varying from the portion of the composition transition layer contacting with the lower material layer to the portion of the composition transition layer contacting with the upper material layer such that the concentration of the element of the upper material layer is relatively large in its portion adjacent to the upper material layer, each of the lower and upper material layers being formed of an oxide or nitride material of aluminum, silicon, zirconium, cerium, titanium, yttrium, tantalum or niobium.