公开(公告)号：US20050212026A1

公开(公告)日：2005-09-29

申请号：US11037626

申请日：2005-01-18

申请人： Suk-jin Chung ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim ,  Jae-soon Lim ,  Young-geun Park

发明人： Suk-jin Chung ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim ,  Jae-soon Lim ,  Young-geun Park

IPC分类号： H01L27/108 ,  H01L21/334 ,  H01L21/82 ,  H01L21/8242 ,  H01L29/94

CPC分类号： H01L27/10867 ,  H01L27/10829 ,  H01L27/1087 ,  H01L29/66181 ,  H01L29/945

摘要： Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench. A storage electrode is formed in the second trench on the dielectric layer.

摘要翻译： 提供了在底切区域中具有绝缘层套环的沟槽电容器和制造这种沟槽电容器的方法。 制造沟槽电容器的一些方法包括在衬底上形成第一层。 在与衬底相对的第一层上形成第二层。 形成在第一和第二层的顶部上具有开口的掩模。 通过从掩模中的开口去除第一层和第二层的一部分来形成第一沟槽。 除去第二层下面的第一层的一部分，以在第二层下形成底切区域。 在第二层下方的底切区域中形成绝缘层套环。 形成第二沟槽，其通过从掩模中的开口去除衬底的一部分而从第一沟槽延伸。 掩埋板沿着第二沟槽形成在衬底中。 介电层形成在第二沟槽的内壁和底部上。 在电介质层上的第二沟槽中形成存储电极。

公开(公告)号：US07531861B2

公开(公告)日：2009-05-12

申请号：US12033065

申请日：2008-02-19

申请人： Suk-jin Chung ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim ,  Jae-soon Lim ,  Young-geun Park

发明人： Suk-jin Chung ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim ,  Jae-soon Lim ,  Young-geun Park

IPC分类号： H01L29/94

CPC分类号： H01L27/10867 ,  H01L27/10829 ,  H01L27/1087 ,  H01L29/66181 ,  H01L29/945

摘要： Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench. A storage electrode is formed in the second trench on the dielectric layer.

摘要翻译： 提供了在底切区域中具有绝缘层套环的沟槽电容器和制造这种沟槽电容器的方法。 制造沟槽电容器的一些方法包括在衬底上形成第一层。 在与衬底相对的第一层上形成第二层。 形成在第一和第二层的顶部上具有开口的掩模。 通过从掩模中的开口去除第一层和第二层的一部分来形成第一沟槽。 除去第二层下面的第一层的一部分，以在第二层下形成底切区域。 在第二层下方的底切区域中形成绝缘层套环。 形成第二沟槽，其通过从掩模中的开口去除衬底的一部分而从第一沟槽延伸。 掩埋板沿着第二沟槽形成在衬底中。 介电层形成在第二沟槽的内壁和底部上。 在电介质层上的第二沟槽中形成存储电极。

公开(公告)号：US20080135876A1

公开(公告)日：2008-06-12

申请号：US12033065

申请日：2008-02-19

申请人： Suk-jin Chung ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim ,  Jae-soon Lim ,  Young-geun Park

发明人： Suk-jin Chung ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim ,  Jae-soon Lim ,  Young-geun Park

IPC分类号： H01L29/94

CPC分类号： H01L27/10867 ,  H01L27/10829 ,  H01L27/1087 ,  H01L29/66181 ,  H01L29/945

摘要： Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench. A storage electrode is formed in the second trench on the dielectric layer.

摘要翻译： 提供了在底切区域中具有绝缘层套环的沟槽电容器和制造这种沟槽电容器的方法。 制造沟槽电容器的一些方法包括在衬底上形成第一层。 在与衬底相对的第一层上形成第二层。 形成在第一和第二层的顶部上具有开口的掩模。 通过从掩模中的开口去除第一层和第二层的一部分来形成第一沟槽。 除去第二层下面的第一层的一部分，以在第二层下形成底切区域。 在第二层下方的底切区域中形成绝缘层套环。 形成第二沟槽，其通过从掩模中的开口去除衬底的一部分而从第一沟槽延伸。 掩埋板沿着第二沟槽形成在衬底中。 介电层形成在第二沟槽的内壁和底部上。 在电介质层上的第二沟槽中形成存储电极。

公开(公告)号：US07354821B2

公开(公告)日：2008-04-08

申请号：US11037626

申请日：2005-01-18

申请人： Suk-jin Chung ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim ,  Jae-soon Lim ,  Young-geun Park

发明人： Suk-jin Chung ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim ,  Jae-soon Lim ,  Young-geun Park

IPC分类号： H01L21/8242 ,  H01L21/336

CPC分类号： H01L27/10867 ,  H01L27/10829 ,  H01L27/1087 ,  H01L29/66181 ,  H01L29/945

摘要： Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench. A storage electrode is formed in the second trench on the dielectric layer.

摘要翻译： 提供了在底切区域中具有绝缘层套环的沟槽电容器和制造这种沟槽电容器的方法。 制造沟槽电容器的一些方法包括在衬底上形成第一层。 在与衬底相对的第一层上形成第二层。 形成在第一和第二层的顶部上具有开口的掩模。 通过从掩模中的开口去除第一层和第二层的一部分来形成第一沟槽。 除去第二层下面的第一层的一部分，以在第二层下形成底切区域。 在第二层下方的底切区域中形成绝缘层套环。 形成第二沟槽，其通过从掩模中的开口去除衬底的一部分而从第一沟槽延伸。 掩埋板沿着第二沟槽形成在衬底中。 介电层形成在第二沟槽的内壁和底部上。 在电介质层上的第二沟槽中形成存储电极。

公开(公告)号：US07144771B2

公开(公告)日：2006-12-05

申请号：US10616056

申请日：2003-07-09

申请人： Gab-jin Nam ,  Seung-hwan Lee ,  Ki-chul Kim ,  Jae-soon Lim ,  Sung-tae Kim ,  Young-sun Kim

发明人： Gab-jin Nam ,  Seung-hwan Lee ,  Ki-chul Kim ,  Jae-soon Lim ,  Sung-tae Kim ,  Young-sun Kim

IPC分类号： H01L21/8242

CPC分类号： H01L21/02186 ,  C23C16/405 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31604 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Methods of forming an electronic device include providing a fist electrode, providing a dielectric oxide layer on the first electrode, and providing a second electrode on the dielectric oxide layer so that the dielectric oxide layer is between the first and second electrodes. More particularly, a first portion of the dielectric oxide layer adjacent the first electrode can have a first density of titanium, and a second portion of the dielectric oxide layer opposite the first electrode can have a second density of titanium different than the first density. Related structures are also discussed.

摘要翻译： 形成电子器件的方法包括提供第一电极，在第一电极上提供电介质氧化物层，并在电介质氧化物层上提供第二电极，使得电介质氧化物层位于第一和第二电极之间。 更具体地，与第一电极相邻的电介质氧化物层的第一部分可以具有第一密度的钛，并且与第一电极相对的电介质氧化物层的第二部分可具有不同于第一密度的钛的第二密度。 还讨论了相关结构。

公开(公告)号：US20070040207A1

公开(公告)日：2007-02-22

申请号：US11586291

申请日：2006-10-25

申请人： Gab-jin Nam ,  Seung-hwan Lee ,  Ki-chul Kim ,  Jae-soon Lim ,  Sung-tae Kim ,  Young-sun Kim

发明人： Gab-jin Nam ,  Seung-hwan Lee ,  Ki-chul Kim ,  Jae-soon Lim ,  Sung-tae Kim ,  Young-sun Kim

IPC分类号： H01L29/00

CPC分类号： H01L21/02186 ,  C23C16/405 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31604 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Methods of forming an electronic device include providing a fist electrode, providing a dielectric oxide layer on the first electrode, and providing a second electrode on the dielectric oxide layer so that the dielectric oxide layer is between the first and second electrodes. More particularly, a first portion of the dielectric oxide layer adjacent the first electrode can have a first density of titanium, and a second portion of the dielectric oxide layer opposite the first electrode can have a second density of titanium different than the first density. Related structures are also discussed.

摘要翻译： 形成电子器件的方法包括提供第一电极，在第一电极上提供电介质氧化物层，并在电介质氧化物层上提供第二电极，使得电介质氧化物层位于第一和第二电极之间。 更具体地，与第一电极相邻的电介质氧化物层的第一部分可以具有第一密度的钛，并且与第一电极相对的电介质氧化物层的第二部分可具有不同于第一密度的钛的第二密度。 还讨论了相关结构。

公开(公告)号：US06599807B2

公开(公告)日：2003-07-29

申请号：US10034043

申请日：2001-12-20

申请人： Jae-soon Lim ,  Seung-hwan Lee ,  Han-mei Choi ,  Yun-jung Lee ,  Gab-jin Nam ,  Ki-yeon Park ,  Young-sun Kim ,  Sung-tae Kim

发明人： Jae-soon Lim ,  Seung-hwan Lee ,  Han-mei Choi ,  Yun-jung Lee ,  Gab-jin Nam ,  Ki-yeon Park ,  Young-sun Kim ,  Sung-tae Kim

IPC分类号： H01L2972

CPC分类号： H01L28/55

摘要： A method for manufacturing a capacitor of a semiconductor device is provided. The method includes the steps of: forming a first electrode on a semiconductor substrate; forming a dielectric layer on the first electrode; forming a second electrode on the dielectric layer; first annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under oxygen atmosphere; and second annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under vacuum.

公开(公告)号：US20090096008A1

公开(公告)日：2009-04-16

申请号：US12249004

申请日：2008-10-10

申请人： Sun-jung Kim ,  Young-geun Park ,  Han-mei Choi ,  Seung-hwan Lee ,  Se-hoon Oh ,  Young-sun Kim ,  Sung-tae Kim

发明人： Sun-jung Kim ,  Young-geun Park ,  Han-mei Choi ,  Seung-hwan Lee ,  Se-hoon Oh ,  Young-sun Kim ,  Sung-tae Kim

IPC分类号： H01L29/788 ,  H01L23/58

CPC分类号： H01L29/42332 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42348

摘要： A nonvolatile memory device having a blocking insulating layer with an excellent data retention property and a method of fabricating the same are provided. The nonvolatile memory device may include a semiconductor substrate having a channel region formed therein; and a gate stack including a tunneling insulating layer, a charge storing layer, a blocking insulating layer and a control gate electrode sequentially stacked on the channel region of the semiconductor substrate. The blocking insulating layer may comprise a lanthanum aluminum oxide having a formula of La2-xAlxOy and the composition parameter x may be 1

摘要翻译： 提供了具有优异数据保存性能的阻挡绝缘层的非易失性存储器件及其制造方法。 非易失性存储器件可以包括其中形成有沟道区的半导体衬底; 以及栅极堆叠，其包括顺序堆叠在半导体衬底的沟道区上的隧道绝缘层，电荷存储层，阻挡绝缘层和控制栅电极。 阻挡绝缘层可以包含具有下式的La 2-x Al x O y的氧化镧铝，组成参数x可以是1

公开(公告)号：US07179704B2

公开(公告)日：2007-02-20

申请号：US11002571

申请日：2004-12-02

申请人： Seung-hwan Lee ,  Jae-dong Byun ,  Sung-tae Kim ,  Young-sun Kim ,  Dal-won Lee ,  Song-won Ko

发明人： Seung-hwan Lee ,  Jae-dong Byun ,  Sung-tae Kim ,  Young-sun Kim ,  Dal-won Lee ,  Song-won Ko

IPC分类号： H01L21/8242

CPC分类号： H01L28/56

摘要： Methods of forming a capacitor of a semiconductor device can include forming a lower electrode of a capacitor on a semiconductor substrate and forming a dielectric material layer of Ba(Ti1-xSnx)O3 (BTS) or Ba(Ti1-xZrx)O3 (BTZ) on the lower electrode. An amorphous layer can be formed on the dielectric material layer. An upper electrode of the capacitor can be formed on the amorphous layer.

摘要翻译： 形成半导体器件的电容器的方法可以包括在半导体衬底上形成电容器的下电极并形成Ba（Ti 1-x Sn Sn x x）的介电材料层 3）（3）（BTS）或Ba（Ti 1-x Zr x x）O 3（BTZ） 在下电极上。 可以在介电材料层上形成非晶层。 可以在非晶层上形成电容器的上电极。

公开(公告)号：US20080096349A1

公开(公告)日：2008-04-24

申请号：US11605452

申请日：2006-11-29

申请人： Ki-yeon Park ,  Han-mei Choi ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim

发明人： Ki-yeon Park ,  Han-mei Choi ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim

IPC分类号： H01L21/336

CPC分类号： H01L29/792 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/3162 ,  H01L29/513 ,  H01L29/66833

摘要： A method of fabricating a nonvolatile memory device includes forming a charge tunneling layer on a semiconductor substrate, forming a charge trapping layer on the charge tunneling layer, forming a first charge blocking layer on the charge trapping layer by supplying a metal source gas and a first oxidizing gas onto the charge trapping layer, forming a second charge blocking layer on the first charge blocking layer by supplying a metal source gas and a second oxidizing gas onto the first charge blocking layer, wherein the second oxidizing gas has a higher oxidizing power as compared to the first oxidizing gas, and forming a gate electrode layer on the second charge blocking layer.

摘要翻译： 一种制造非易失性存储器件的方法包括：在半导体衬底上形成电荷隧穿层，在电荷隧道层上形成电荷俘获层，在电荷俘获层上形成第一电荷阻挡层，通过提供金属源气体和第一 在电荷捕获层上氧化气体，通过在第一电荷阻挡层上提供金属源气体和第二氧化气体，在第一电荷阻挡层上形成第二电荷阻挡层，其中第二氧化气体具有较高的氧化能力， 并且在第二电荷阻挡层上形成栅极电极层。