Abstract:
Disclosed are novel polyether compounds obtained by the reaction or polymerization of 3,4-epoxy-1-butene in the presence of tetrahydrofuran, an acidic catalyst and a nucleophilic initiator compound. The polyether compounds comprise m units of residue (1), n units of residue (2), and p units of residue (3) wherein (i) residues (1), (2) and (3) have the structures: ##STR1## (ii) the total value of m+n+p is 5 to 70; (iii) the value of n/(m+n+p) is in the range of 0.2 to 0.4, i.e., residue (2) constitutes from 20 to 40 mole percent of the total moles of residues (1), (2) and (3); and (iv) at least 98 percent of the terminal groups have the structure: ##STR2##
Abstract:
A microelectronic package includes a die which may include MEMS and CMOS circuitry for analyzing a fluid. A defined path is provided for channeling fluid to the die. Rather than patterning depressions or physical channels in the package substrate, the defined paths comprise coatings that may channel the flow of liquids to the die for biological sensor type applications. The defined paths may comprise a wetting coating that has an affinity to fluids. Similarly, the defined paths may comprise a dewetting coating the tend to repel fluid surrounding the paths.
Abstract:
An embodiment of the present invention is a technique to provide a dielectric film material with controllable coefficient of thermal expansion (CTE). A first compound containing a first liquid crystalline component is formed. The first compound is cast into a first film. The first film is oriented in an magnetic or electromagnetic field in a first direction. The first film is cured at a first temperature.
Abstract:
Methods for covalently and indelibly anchoring a polyacrylate polymer using a UV-induced polymerization process in the presence of a photoinitiator to an oxide surface are disclosed herein. The methods and compositions prepared by the methods can be used as indelible marking materials for use on microelectronic packages and as solder and sealant barriers to prevent overspreading of liquids on the oxide surfaces of microelectronic packages.The polyacrylate polymers are covalently linked to the oxide surface by use during the printing and UV-curing process of an adhesion promoter having as a first domain an oxide-reactive silyl group, bonded via a linker to an acrylate-reactive group.
Abstract:
Dielectric materials comprising release agents are described. Also described are a process for improving the processability of dielectric materials during hot embossing, substrates prepared by hot embossing, and integrated-circuit packages comprising the improved substrate.
Abstract:
A curable material useful as thermal material comprises at least one vinyl-terminated silicone oil, at least one conductive filler, and at least one hydrogen terminated silicone oil. The hydrogen terminated silicone oil is used to reduce a shear modulus G′ of the cured thermal interface material.
Abstract:
A method, apparatus and various material-architectures in an electrically conductive through die via formed of a composite material with a continuous phase of matrix metal and a dispersed phase of graphitic structures of carbon, wherein bulk material properties of the composite material differ from similar bulk material properties of the matrix metal.
Abstract:
An embodiment of the present invention is a technique to functionalize carbon nanotubes in situ. A carbon nanotube (NT) array is grown or deposited on a substrate. The NT array is functionalized in situ with a polymer by partial thermal degradation of the polymer to form a NT structure. The functionalization of the NT structure is characterized. The functionalized NT structure is processed according to the characterized functionalization.
Abstract:
Dielectric materials comprising release agents are described. Also described are a process for improving the proccessability of dielectric materials during hot embossing, substrates prepared by hot embossing, and integrated-circuit packages comprising the improved substrate.
Abstract:
Numerous embodiments of an apparatus and method to stress and warpage of semiconductor packages are described. In one embodiment, a semiconductor die is disposed above a substrate. An encapsulating material is disposed above the substrate and semiconductor die, in which the encapsulating material has a combination of a low coefficient of thermal expansion material and a high coefficient of thermal expansion material.