Abstract:
A semiconductor device includes a gate pattern disposed on a semiconductor substrate, a gate spacer disposed on both sidewalls of the gate pattern, and a fixed charge layer disposed in the semiconductor substrate below the gate spacer. Elements generating fixed charges are injected into the fixed charge layer. A layer in which carriers induced by the fixed charge layer are accumulated is disposed below the fixed charge layer. The elements are segregated to a substrate of the semiconductor substrate from the inside of the semiconductor substrate by heat.
Abstract:
A method for fabricating a window member for a display device of a portable terminal includes: fabricating a high-hardness sheet to be attached to a surface of the window member (‘sheet fabrication step’), fabricating a body of the window member with a high-polymer synthetic resin (‘body fabrication step’), and attaching the high-hardness sheet to an outer surface of the body (‘attaching step’), in which the outer surface of the body is formed to have a curved surface in the body fabrication step.
Abstract:
A method of acquiring contents between a client terminal and a local server, the method including the client terminal photographing or recording partial information of predetermined contents according to an input of a user, the client terminal transmitting the partial information of contents to a predetermined local server, the local server analyzing the partial information of contents and retrieving contents or content-related information corresponding to the partial information of contents, and the local server transmitting the retrieved contents or content-related information to the client terminal.
Abstract:
A filler for filling a gap includes a compound represented by the following Chemical Formula 1. SiaNbOcHd. [Chemical Formula 1] In Chemical Formula 1, a, b, c, and d represent relative amounts of Si, N, 0, and H, respectively, in the compound, 1.96
Abstract:
A network device driver includes a fetching/hooking module to fetch/hook hardware data and/or a hardware event of the communication terminal; a packet assembly module to packetize the hardware data and/or the hardware event; a packet release module to recover the packetized hardware data and/or the hardware event, which are/is received from another terminal connected with the communication terminal via a wired/wireless communication network; and a transmission module to receive/transmit the packetized hardware data and/or the hardware event from/to another communication terminal.
Abstract:
A device and method of sharing contents based on time synchronization are provided. A first device may generate a time stamp with respect to contents being replayed by a second device and transmit the time stamp to the second device. In response, the second device may generate a contents list based on the time stamp and transmit the contents list to the first device. The first device may request contents selected by a user from among the contents list, and the second device may provide the requested contents to the first device.
Abstract:
An electronic apparatus is capable of transferring contents on a cloud system to a device connected to a DLNA. In a method for operating a client on the cloud service system, a stream meta data table including information of one or more contents is received from a server. Meta data of contents selected from the contents are converted such that the meta data coincide with a format used by a device selected from one or more devices connected to a network. The selected contents are streamed from the server and transferred to the selected device.
Abstract:
A Doherty power amplification apparatus and method using a combined cell are provided. The Doherty power amplification apparatus includes, a power splitter for splitting an input power, and outputting the split powers to a carrier amplification unit and (N−1) peaking amplification units, wherein the carrier amplification unit, including M carrier power amplifiers, for amplifying power output from the power splitter; the (N−1) peaking amplification units, each of which includes M peaking power amplifiers, for amplifying the respective split powers output from the power splitter, and a power combiner for combining a power amplified by the carrier amplification unit and the respective split powers amplified by the (N−1) peaking amplification units, and for outputting the combined power, wherein N represents an integer obtained by adding a number of the carrier amplification units and a number of the (N−1) peaking amplification units, and M represents an integer which is equal to or more than 1.
Abstract:
The present invention relates to a new use of inhibitors of leukotriene B4 receptor BLT2 for treating human cancers. More particularly, the present invention relates to a pharmaceutical composition for treating human cancers comprising BLT2 inhibitors and a method for treating human cancers using BLT2 inhibitors.The present inventors revealed the role of BLT2 as a survival factor of human cancers, such as bladder, prostate, pancreatic, and breast cancer and found that the BLT2 inhibitors can be used as anti-cancer drugs. The present inventors revealed that BLT2 has an important role in metastasis of cancer cells and angiogenesis of tumor and demonstrated that the anti-cancer activity of the BLT2 inhibitors is accomplished by inducing the apoptosis of cancer cells, inhibiting the metastasis of cancer cells, or inhibiting the angiogenesis of tumor.
Abstract:
A method of fabricating a semiconductor device includes forming a gate pattern on a substrate, forming an amorphous silicon (a-Si) region adjacent to the gate pattern by implanting a dopant containing a Group IV or VIII element into portions of the semiconductor substrate, forming gate spacers on sidewalls of the gate pattern, forming a first cavity by etching the a-Si region and the substrate using a first etching process, forming a second cavity by etching the substrate, such that the second cavity expands a profile of the first cavity in lateral and vertical directions, and forming a strained semiconductor region in the second cavity.