Abstract:
An optical switch selectively transmits an optical signal to one of multiple optical paths for use in an optical communication. The optical switch includes a mobile structure provided with a mirror surface at one end surface of the mobile structure to change the optical path by moving the mobile structure backward and forward along an axis parallel to the mirror surface. It has at least a pair of leaf springs in the form of a shallow arch, wherein each of the leaf springs is connected to both side surfaces of the mobile structure in a leaf spring axis perpendicular to the mirror surface, respectively, thereby obtaining a latch-up function and an actuator for moving the mobile structure. In the optical switch, elastic bodies are introduced into connection portions of the leaf springs, respectively, to give rise to a degree of freedom to the connection portions in the direction of the leaf spring axis. The elastic body can be an I-shape beam, a multiple spring with a curvature and an S-shape beam allowing angle deflection.
Abstract:
Disclosed is a printed circuit board including a first layer having a first stacked region, a second stacked region spaced apart from the first stacked region by a selected distance, and a flexible connection part disposed between the first and second stacked regions, and extending to the first stacked region and the second stacked region with selected width and length, the flexible connection part having a conductive pattern layer for signal transmission between the first stacked region and the second stacked region; a pair of second layers disposed apart on an upper surface of each of the first and second stacked regions of the first layer and having a first signal pattern layer on both surfaces of each of the second layers, wherein the first signal pattern layer of the second layer is electrically connected to the conductive pattern of the flexible connection part, a pair of upper metal layers disposed on respective upper surfaces of the second layer, the upper metal layer interposing a first insulating adhesive between the upper metal layer and the second layer, a pair of third layers disposed apart on a lower surface of each of the first and second stacked regions of the first layer and having a second signal pattern layer on both surfaces of each of the third layers, and a pair of lower metal layers disposed on respective lower surfaces of the third layers, the lower metal layer interposing a second insulating adhesive between the lower metal layer and the third layer.
Abstract:
The present invention relates to a circuit for searching a fault location in a device having a number of ASIC's, including a first BIP(Bit Interleaved Parity) generating unit, which is coupled to the input stage of the ASIC where a fault will be detected, for calculating and outputting BIP for the specific byte, which is one of overhead bytes that were already utilized, i.e., not in use in transmission line, during a certain period; a BIP extraction unit, which is in parallel connected with the first BIP generating unit, for extracting the same byte as said specific byte from overhead bytes, which are generated and inserted in the previous-stage ASIC, in order to compare with BIP inputted into the first BIP generating unit during a certain period; a BIP comparison unit for simply comparing the result outputted from the first BIP generating unit with the result outputted from the BIP extraction unit; a BIP accumulation unit for accumulating the results outputted by the BIP comparison unit; a BIP threshold interrupt processing unit for comparing the results accumulated by the BIP accumulation unit with the threshold value which is used as the reference for generating an interrrupt, and then externally outputting the compared result; a second BIP generating unit, which is coupled to the output stage of the ASIC, for calculating and then outputting BIP for all the bytes within the transmission line(HBUS) during a certain period in order to inspect the signal of HBUS to the next-stage ASIC; and a BIP inserting unit for inserting the result generated from the second BIP generating unit into the specific byte location whithin said transmission line.
Abstract:
A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.
Abstract:
There is provided a semiconductor device comprising, a first metal pattern formed at a first metal level and extending in a first direction, a second metal pattern formed at the first metal level, extending in a second direction that is different than the first direction, and disposed on a side of the first metal pattern to be separated from the first metal pattern, a first via structure formed on the first metal pattern, a third metal pattern formed at a second metal level that is different than the first metal level and electrically connected to the first metal pattern by the first via structure, and a first pad electrically connected to the first metal pattern and a second pad electrically connected to the third metal pattern.
Abstract:
An amplifier and an amplifying method are provided. The amplifier includes: an amplifying unit amplifying and transferring a transmission target signal to a TDD switch; the TDD switch transferring a signal received from the amplifying unit to a filter unit when the amplifier operates in a TDD mode, and transferring a signal received from the filter unit to a duplex mode selection switch; the duplex mode selection switch transferring a signal received from the filter unit to a receiving side; and a controller controlling the duplex mode selection switch to transfer the signal received from the filter unit to the receiving side without passing through the TDD switch when the received duplex mode selection signal is a FDD mode selection signal.
Abstract:
There is provided a method of fabricating a semiconductor light emitting device, including: forming a sacrificial layer having a plurality of nanostructures on a growth substrate; forming a protective layer to cover the sacrificial layer; forming a light emitting structure by allowing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer to be sequentially grown on the protective layer; etching the protective layer to expose the nanostructures; and separating the light emitting structure from the growth substrate by etching the exposed nanostructures, whereby damage and degradation of a light emitting structure at the time of the separation thereof may be prevented.
Abstract:
An electrolyte for a rechargeable lithium battery includes a non-aqueous organic solvent, a lithium salt, and an additive. The additive includes a gamma butyrolactone compound substituted with at least one F atom at the α-position.
Abstract:
Disclosed is a gasket for reducing stress concentration in a fuel cell stack, which prevents damage or deformation of a separator and further prevents a position shift of the gasket by reducing stress concentration formed at a specific region by deformation of the gasket due to a compression force. In particular, the gasket includes a T-shaped or cross-shaped gasket joint to form hydrogen, air and coolant manifolds, and the gasket joint has a structure in which two joint branches forming an angle of 180° in the opposite direction to each other are joined at one point with a particular angles which reduce stress concentration formed due to compression force by deformation of the gasket.
Abstract:
The present invention relates to a biopolymer-modified nanocarrier in which chitosan is bound to a water-soluble biocompatible polymer that has been crosslinked via a photo-crosslinkable functional group; wherein the chitosan-modified nanocarrier has a diameter which changes in accordance with changes in temperature, has enhanced skin permeability or cellular uptake and selective delivery to cancer tissue as compared with a bare nanocarrier to which chitosan has not been bound, and exhibits characteristics that are advantageous in photothermal therapy. The chitosan-modified nanocarrier of the present invention exhibits highly superior efficacy as a transdermal carrier, since the skin permeability is enhanced to a significant level as compared with a bare nanocarrier that has no chitosan. The chitosan-modified nanocarrier of the present invention can be advantageous in the imaging and photothermal therapy of tumour cells and cancer cells, since the cellular uptake by tumour cells and cancer cells is substantially improved.